LMFB70N10 100V N-Channel MOSFET Description General Features Application ● ● Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HC1010 LMFB70N10 TO-220 1000 units Dimensions TO-220 Pin Configuration www.leiditech.com Absolute Maximum Ratings (TC=25℃ unless otherwise noted) - - Rev : 01.0 .2021 / 15 8 G D S Battery protection Load switch Uninterruptible power supply ● D G S These N-Channel enhancement mode power field effect transistors are using SGT technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. VDS 100V ID (at VGS=10V) 70A RDS(ON) (at VGS=10V) 8.5mΩ(Typ) Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous TC=25°C I D 70 A TC=100°C I D 44 A Maximum Power Dissipation P D 122 W Single pulse avalanche energy (1) EAS 230 mJ Junction and Storage Temperature Range T J ,T STG -55 To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit Thermal Resistance junction-case R θJc 1.02 ℃ /W Thermal Resistance junction-to-Ambient R θJA 62 ℃ /W
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LMFB70N10100V N-Channel MOSFET
Description
General Features
Application
Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
HC1010LMFB70N10 TO-220 1000 units
Dimensions TO-220
Pin Configuration
www.leiditech.com
Absolute Maximum Ratings (TC=25unless otherwise noted)
- -
Rev : 01.0 .2021 /1 58
G D S
Battery protection
Load switch
Uninterruptible power supply
D
G
S
These N-Channel enhancement mode power field
effect transistors are using SGT technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
VDS 100V
ID (at VGS=10V) 70ARDS(ON) (at VGS=10V) 8.5mΩ(Typ)