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1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor , exp exp exp ) ( ) ( exp exp 0 kT E E n kT E E kT E E N kT E E E E N kT E E N n Fi F i Fi F c Fi c Fi F Fi c c c F c , exp exp exp ) ( ) ( exp exp 0 kT E E p kT E E kT E E N kT E E E E N kT E E N p F Fi i F Fi Fi v v F Fi Fi v c F v v 2 0 0 exp i g v c n kT E N N p n For both undoped material and doped material under equilibrium condition
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1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

Jan 18, 2016

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Russell Arnold
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Page 1: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

1

Notes For 25 February

Electron and Hole Concentrations in Extrinsic Semiconductor

,expexpexp

)()(expexp0

kT

EEn

kT

EE

kT

EEN

kT

EEEEN

kT

EENn

FiFi

FiFcFic

FiFFicc

cFc

,expexpexp

)()(expexp0

kT

EEp

kT

EE

kT

EEN

kT

EEEEN

kT

EENp

FFii

FFiFivv

FFiFivc

Fvv

200 exp i

gvc n

kT

ENNpn

For both undoped material and doped

material under equilibrium condition

Page 2: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

2

Position of Fermi Energy in Extrinsic Semiconductors

i

Fi

v

v

i

Fi

c

cF

n

pkTE

N

pkTE

n

nkTE

N

nkTEE

00

00

lnln

lnln

,expexp0

kT

EEn

kT

EENn FiF

icF

c

,expexp0

kT

EEp

kT

EENp FFi

iFv

v

Position of Fermi-level:

Page 3: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

3

Position of Fermi Energy in Extrinsic Semiconductors

i

Fi

v

v

i

Fi

c

cF

n

pkTE

N

pkTE

n

nkTE

N

nkTEE

00

00

lnln

lnln

,expexp0

kT

EEn

kT

EENn FiF

icF

c

,expexp0

kT

EEp

kT

EENp FFi

iFv

v

Position of Fermi-level:

Page 4: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

44

Variation of Fermi-Energy with Doping Concentration

Page 5: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

55

Variation of Fermi-Energy with Temperature

Page 6: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

66

Chapter 5 Carrier Transport Phenomena

Charged carriers in semiconductor: electrons and holes

Carrier transport: movement of electrons and holes

Mechanisms of carrier transport

Drift:

Diffusion:

charge movement due to electric field

charge movement due to density gradient

Page 7: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.
Page 8: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

88

Carrier DriftObserve that the text uses “e” instead of “q” as a symbol for a unit of charge

Drift current densityddrift vJ

Current density due to the holesep

Drift velocity of holes Ev pdp

EenJ ntdrifn

Current density due to the holes

Current density due to the electrons

EepJ ptdrifp

Drift velocity of electrons Ev ndn

Total drift current density EnpeJ npdrift )(

Charge density:

Charge density: en

Page 9: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

99

Definition of Carrier Mobility

Ev pdp Drift velocity of holes

Drift velocity of electrons Ev ndn

p : mobility of holes

n : mobility of electrons

Mobility: relates the average drift velocity of a carrier to the electric field

Page 10: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

1010

Conductivity

EEnpeJ npdrift )(

)( np npe Conductivity:

Resistivity:

Unit: (Ω.m)-1

)(

11

np npe

Unit: (Ω.m)

N-type semiconductor:ndnnp eNennpe )(

P-type semiconductor:papnp eNepnpe )(

Intrinsic semiconductor: )()( npinp ennpe

Page 11: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.
Page 12: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.
Page 13: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.
Page 14: 1 Notes For 25 February Electron and Hole Concentrations in Extrinsic Semiconductor For both undoped material and doped material under equilibrium condition.

1414

Resistance

A

IJ

L

VE

EJ

L

V

A

I RIIA

LI

A

LV

A

L

A

LR