1 Lenovo - Sony Technical Meeting August 27, 2003 Sony Corp.

1

Lenovo - Sony Technical Meeting

August 27, 2003

Sony Corp.

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“Aries” Project Members

Marketing Mgr Akira SHIRAISHI

China Local Biz Support Edward WU/Robert GAO

China Local Tech Support Yukihito NISHIMURA

Planning Promoter Kazuhiko YOSHIUCHI

Electrical Mgr Takanori MARUICHI

Mechanical Mgr Hiromasa IGUCHI

Software Engr (Isao SUZUKI)

Safety Engr Kyusuke KUWAHARA

3

Factories & Manufacturing Capabilities

Japan(Sony Fukushima)Cell& Pack

(Sony Tochigi)Cell

Malaysia(Sony Electronics Malaysia)Pack

Taiwan(Solectron Taiwan)Pack

China(Sony Electronics Wuxi)Cell&Pack

4

Cell Information

Cylindrical(US18650) & Polymer

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Cell Line Up for PC Battery

US18650G5

US18650G7

UP5541100

CY2005

PC Polymer Cell

Nominal Capacity

CELL CY2003 CY2004

Cylindrical Cell

Nominal Capacity

K2: 2200mAh/8.3Wh K3: 2400mAh/9.1Wh

2150mAh/8.1Wh

2400mAh/9.1Wh

6

US18650G7, Cell Safety Requirement

Max Charge Voltage; 4.25V/cell (Open Circuit Voltage)

Cell Temperature; Charge ; 0 to 60 deg. C Discharge; -20 to 70 deg. C

Charging Current ; less than 0.7C If capacity is 2400mAh, 0.7C means; 2.4A X 0.7 = 1.68A

Discharging Current; less than 1.0C If capacity is 2400mAh, 1C means; 2.4A X 1 = 2.4A

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US18650G7, Electrical Info.* Standard Charge Condition

Charge Method : constant current constant voltage Charge Up Voltage : 4.2± 0.05V Charge Current : 1.0A Charge Time : 5.0 hours charge Ambiance Temperature : 23oC at room temperature, 3.0V cut off

Nominal Capacity(0.2C discharge)

Rated Capacity(0.2C discharge)

Capacity at 0.5C

Capacity at 1C

Nominal Voltage

Internal Impedance

Cycle Performance

2400mAh9.0Wh

2250mAh8.4Wh

2350mAh (8.6Wh)

2300mAh (8.2Wh)

3.7V

55mΩ

80 % of Initial capacity at 300 cycles

average capacity3.75V (average discharge voltage)

minimum capacity

average capacity

average capacity

measured by AC1kHz

0.7A discharge

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US18650G7, Mechanical Info.

Cell Size (with plastic tube)(φ

7.2)

φ18

.2　　　

(Dia

met

er o

f Top

)

φ18

.2

(D

iam

eter

of B

ody)

64.9

(0.3)

+0.

15-0

.20

+0.2-0.2

+0.

15-0

.20

9

uP and AFE Information

Micro Processor---bq2083 Analogue Front End---bq29311

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bq-uP Diagram

EEPROM(2k)

(+)

(C)Clock

(D)Data

(-)

2nd Over Charge Protector

Analogue Front End Micro Processor

bq2083

Batt _Pres

c-FETd-FET

Current senseResistor (10mΩ)

Thermal Fuse with Resistor

32kHzThermistor

(Cells temp.)

Thermistor(FETs temp.)

bq29311

Sys _Pres

Batt_Alart

ActiveFuse

*Battery_pres and Sys_pres are not necessary.

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bq-uP Schematic (for example)

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Mitsubishi-uP Diagram (for example)Pre-charge

Micro Processor

MitsubishiAnalogue Front End ICData

Clock

Batt 　 Pre

Data/CLK

Clock

Vdd

DIN

DOUT

AOUT（Ｖ・Ｉ　 data ）

(output of each cell voltage and current5V output, 　 Low Battery voltage detect, FET-SW drive,reset function)

EEPROM

ActiveFuse

2nd Over Charge Protector

TH1/TH2 ： thermistor

Batt -

Batt +

ＴＨ1

ＴＨ2

SYS 　 Pre

Batt 　 Alarm

0.07Ω 　 1/2W

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Mechanical Information

UL requires UL flammability “V-1” for enclosure.

Min thickness; 0.8 mm---PC

1.2 to 1.6 mm---PC+ABS

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Pack Structure (for example)

* Connection tab and thermal fuses are replaceable to other components.

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Development Schedule

’03/3Q 4Q ’04/1Q 2Q 3Q 4Q

Mass Production

*PVT sample 50 pcs.

EVT(Hand Made Case) *EVT sample 2 pcs.

*DVT sample 20 pcs.

Fiscal year

10 11 12 1 2 3 4 5 6 7 8 9 10 11 12

DVT(Hard Tooling Case)

Safety Application

Design Approval

(Min. 1.5 months)

Design

Hard Tooling (Min. 2 months)

PVT

MP

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WELCOME 　 TO 　

SONY ELECTRONICS WUXI （ SEW)

索尼電子（無錫）有限公司

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Wuxi

Beijing

Shanghai

Location ：　 East longitude119º31’ 　

　　　　　　　　　　 North latitude31° ７’　East of China 、 the center of Changjiang delta area103Km from Shanghai 、 147Km from Nanjing

Area： 5 million 　 DT 1.2 million

4,650km² 　 DT: 517.7km²

Population：

Industry lines ：　

Mechanism 、 Electronics 、 Light-industries 、 Textile 、 Chemical 、 Pharmaceutical

GDP：

120.1billion in 2000 、 one of the first ten in the country

Traffic：

Express way to SHA & Nanjing 、 312 National Road 、 Railway to SHA & Nanjing

Education：

Jiangnan University

Wuxi Summary

GDP RMB28,000/person 、 the 4th in the country

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Location:

National Hi-tech Industrial Development, No. 1 of the best 50 national hi-tech industrial development

Favorable policy:

Enterprises come in this district ：

Sweden : 　 VOLVO 、 Astra

Japan : 　 SHARP 、 Alps 、 Murata 、 Sumitomo 、 Hitachi 、

New District Industrial Zone Summary

At the east-south of Wuxi city, 6Km from downtown.

Income tax rate 15% (Normal area 30%, littoral area 24% ）

2 years’ income tax-free, 3 years’ income tax half-paid

America : 　 Seagate 、 Kodak 、 GE

German : 　 SIEMENS 、 BOSCH 、 Bayer 、 HOIST

English : 　 COMINS 、 Rexam

National 、 Toshiba 、 Maruko 、 Nittobo

Character:

Hi-tech enterprise , - 5 free 5 half

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Company Profile

● 　 Date of incorporation : August 22nd/2000● Leading Company : Energy Company● Ownership : Sony China 100%, Registered Capital : US$29.5mil● Board Chairman : Hiroshi Nakagawa Vice Board Chairman : Masaru Suzuki Managing Director : Taizo Suzuki● Address : 62 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Lithium-Ion Polymer Battery, Land Area : 110,000 ㎡ , Factory-site 10,600 ㎡● Rental Address : 52 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Projector TV, Factory-site 3,855 ㎡● New Plant Address : 64 Block, - ditto - . Main Products : Electronics Devices. Land Area : 210,000 ㎡ , Factory-site ( Initial ) : 19,100 ㎡● Employee As of Apr/2003 : 1,305 persons, include 11 persons of Japanese (Battery)

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Sony China Battery Div- Sales Network

Sales 　Branch

Marketing & Sales Office

Shanghai( 上海 )Sales &

Marketing Office

Shenzheng( 深圳 ) Branch

Beijing( 北京 ) Branch

Sony Wuxi ( 無錫）Electronics

Manufacture

Sony Hong Kong

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Business Terms

Development Cost :1) NRE – New model development fee2) Sample Fee3) Tooling Fee

Delivery Terms : ex-Sony Wuxi Factory or CIF Lenovo Shanghai Factory

Warranty : 12 months after manufacturing date

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Questions

Contact window for business matter ?(Procurement for R&D parts and MP parts)

Function of Beijing team and Shanghaiteam ?

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Appendix-1; Discharge Curves of US18650G6

2.0

2.5

3.0

3.5

4.0

4.5

0 1 2 3 4 5 6 7 8 9

1W3W5W7W10W

12W15W18W20W24W

Ce

ll V

olta

ge

(V

)

Discharge Capacity (Wh)

Charge : 4.20Vmax 0.7CAmax 30mAcutDischarge : 3.0Vcut

Temperature : 23 oC

Discharge Load Characteristics (US18650G6)

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Appendix-2; Charge Curves of US18650G6

0

1

2

3

4

5

0

0.4

0.8

1.2

1.6

2

0 0.5 1 1.5 2 2.5 3 3.5

Charge Characteristics C

har

ge V

olta

ge

/ V

Charge time / hours

Charge Voltage

Charge Current

Ch

arge C

urre

nt / A

Charge : 4.20Vmax 0.7Cmax

Temperature : 23 oC

US18650G5

US18650G4

US18650G6