••• 1 EuroSimE, 18-20.04.2011, Linz, Austria Trends of Micro- and Nanoelectronics in the European R&D Programme Vesselin Dontchev Nanoelectronics Components and Systems Information Society & Media Directorate- General European Commission mer : Views expressed in this presentation are not necessarily stating an official position of the European Commission
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••• 1EuroSimE, 18-20.04.2011, Linz, Austria
Trends of Micro- and Nanoelectronics in the European
R&D Programme
Vesselin Dontchev
Nanoelectronics Components and Systems
Information Society & Media Directorate-GeneralEuropean Commission
Disclaimer: Views expressed in this presentation are not necessarily stating an official position of the European Commission
••• 2EuroSimE, 18-20.04.2011, Linz, Austria
Presentation outline
Europe 2020 – a new strategy for the EU Current EC funding of EU Research (ICT in
particular) Nanoelectronics- Examples of research
projects dealing with simulation Today’s opportunities: ICT WP 2011-12 Information on the future programme (2014+) Summary
••• 3
• Smart Growth: knowledge and innovation economy
• Sustainable growth: greener and competitive economy
• Inclusive growth: high employment, knowledge
people and social and territorial cohesion
EUROPE 2020: A EU strategy for smart, sustainable and inclusive growth
Europe 2020 – a new strategy for the EU Current EC funding of EU Research (ICT in
particular) Nanoelectronics - Examples of research
projects dealing with simulation Today’s opportunities: ICT WP 2011-12 Information on the future programme (2014+) Summary
••• 14
EuroSimE, 18-20.04.2011, Linz, Austria
AtomicsAdvanced Front-End Technology Modeling
for Ultimate Integrated Circuits
FP6 IST programme
Consortium
BudgetTotal Cost: 4.4M€EC : 2.5 M€
OBJECTIVESDevelopment of TCAD models suitable for
a) materials (strained and unstrained SiGe alloys, strained Si, SOI, etc);
b) processes (activation and diffusion of dopants, formation of extended defects, including low-temperature and millisecond annealing, point-defect engineering)
employed at the 32 nm technology node and beyond.
MOTIVATION
TCAD can save 30% development time
and costs (ITRS 2008)
ExampleDependence of dopant solubility on strain (Ahn et al. PRB 2009)
The models are- implemented in simulation software Sentaurus (Synopsys)- validated with respect to industrial needs (STM)
ConsortiumObjectives - extend the capabilities of TCAD to the prediction of - leakage currents in CMOS structures- the alternative doping processes considered for a reduction of leakage currents.
Key Issues• Full set of missing models for simulating leakage currents in
CMOS derivatives → providing extra functionality to the basic NE technology with sizes 22 nm CMOS transistors.
• Implementation and integration of the models into the Sentaurus TCAD platform of Synopsys.
• Evaluation of the integrated models by STMicroelectronics.
Expected impact Predictive simulations of CMOS derivatives in industrial
environments at an early stage of development. Significant reduction of development time and costs. Extending the EU knowledge and skills in NE Competitiveness of EU industry in CMOS derivatives
• Top-down approach• Set of novel pre-defined themes
FET Open• Bottom-up approach• Open to any research idea
Nano-electronics related topics with EU funding ~ 30M€/year:Molecular-scale systems, Tera-scale computing, Quantum-ICT, Bio-Chemistry-based ICT and Towards zero power ICT
Future & Emerging Technologies – FETSupporting high-risk transformative research in ICT
EuroSimE, 18-20.04.2011, Linz, Austria
ICT Work Programme 2011-12
••• 20
European vision of the More Moore and More than Moore domains
More than Moore: Diversification
Mo
ore
’s L
aw:
Min
iatu
riza
tio
n
Bas
elin
e C
MO
S:
CP
U, M
emo
ry, L
og
ic
130nm
90nm
65nm
45nm
32nm
22nm
Extended CMOS
Analog/RF Passives HV PowerSensors
ActuatorsBiochips
InformationProcessing
Digital content System-on-Chip
(SoC)
Interacting with people and environmentNon-digital content SoC & System-in-
Package (SiP)
Combining SoC and SiP: Higher Value Systems
Beyond & Extended CMOS technologies need to meet the criteria of systemability, integratability and manufacturability
Nanoelectronics”Small, smaller, smarter”
- Advanced components in advanced systems enabling pervasive applications -
Beyond CMOS
••• 21
• To ensure interaction between system competences and device technology to better incorporate the device in a system to perform a given function.
• To address energy efficiency needs (e.g. for mobile applications).
• Nanoelectronics devices as system enablers should provide solutions for global challenges
• To prepare for “beyond” traditional shrinking (ITRS roadmap)
ITRS-ERD vision of the role of Beyond CMOS and More than Moore elements to form future extended CMOS platforms.
• Future developments in Beyond CMOS and More than Moore as an extended-CMOS vision. No disconnection from the advanced silicon CMOS in order to keep the impact of its results on the applications and markets.
• Needs of hybridizing silicon with molecular switches, ferromagnetic logic, spin devices and sensors in order to enable heterogeneous and morphic system architectures.
• Integrateability of novel technology with CMOS and their reliability become key factors.
European equipment and material companies i) Access to nano-manufacturing and to advanced technologies positive feedback ii) Joint assessment and demonstration platform
Evidence of reproducible equipment parameters Stimulate the access to world wide equipment market
(especially important for SMEs)
Semiconductor Equipment for Wafer Bonding with Plasma Activation
EV Group, CEA-LETI, Soitec
3D Integration of Bulk Si WafersEV Group, CEA-LETI,
STMicroelectronics Crolles II
Low Energy and Dose Implant TestSEMILAB, Fraunhofer IISB,
ST Microelectronics Crolles II,NXP Crolles R&D
Ruthenium Atomic Vapor Deposition Competitiveness in Nanoelectronic
Metrology Using X-Ray TechniquesJordan Valley, CEA-LETI,
STMicroelectronics Crolles II,NXP Crolles R&D
Objective 3.1: Manufacturing and Equipment assessment
EuroSimE, 18-20.04.2011, Linz, Austria
M a n u f a c t u r a b i l i t y • Concept to be taken into account at early stages of research• From prototype to a reliable manufacturing of devices with predefined
reproducible parameters.
••• 24
1. Phenomena and Effects * Quantum and atomic scale ; * Electro-thermo-mechanical* Transport (drift, diffusion ); * System integration at the nanoscale
models measurements (challenging due to the miniaturization)
••• 25
Dates
Open: 26 July 2011 Close: 17 January 2012 (at 17:00 Brussels local time)
Funding schemes:
a) Beyond CMOS technology: STREPs b) Circuit-technology solutions: STREPs and at least 1 IPc) Nano-manufacturing and joint equipment assessment: STREPs and at least 1
IPd) Support measures: CSAs
Indicative budget distribution - 60 M€:
IP/STREP 55 M€ CSA 5 M€
Objective 3.1 Information about call 8
••• 26
ICT Proposers’ Day 201119 - 20 May, Budapest
Networking for European ICT R&D
• Aim of the event:
to prepare for Calls 8 and 9 (together >1 B€)– by networking and partnerships building
– by first-hand information from >100 EC officials
• Structure:
– thematic sessions with presentations of proposal ideas
– information stands & meeting points
• Registration:
free of charge, open from January 2011http://ec.europa.eu/ictproposersday
EuroSimE, 18-20.04.2011, Linz, Austria
••• 27EuroSimE, 18-20.04.2011, Linz, Austria
Presentation outline
Europe 2020 – a new strategy for the EU? Current EC funding of EU Research (ICT in particular) Nanoelectronics - Examples of research projects dealing
with simulation Today’s opportunities: WP 2011-12 Information on the future Common Strategic
Framework (CSF) for R&I funding (2014+) Summary
••• 28
What is next?
2010 2011 2012 2013 2014
FP7ICT WP 2011-12
ICT WP 2013
FP8 + CIPII
CSF(Common Strategic Framework)
Preparatory work
Strengthen, focus & simplify EIPs
KETs
Light and fast
MAFF 2014+Externalisation
• 9 Feb Green Paper• Feb-May Consultation based on Green Paper• 10/6 Consultation ‘wrap-up’ event in Brussels• June Proposal for next MAFF• Dec Legislative proposal(s) for CSF
••• 29
Common Strategic Framework (CSF) for EU R & I funding ( 2014+ )
Three key messages
• More clarity of goals and strategy, - Higher impact on competitiveness / society,
- More EU added value
• Simplification Procedures but also of programmes/instruments
→ To attract wider constituency, smaller entities
• Work across silos– research-innovation-policy priorities– between themes and disciplines– EU-MSs, public-private
EuroSimE, 18-20.04.2011, Linz, Austria
• Limited set of funding schemes - common across all activities
• Unique Rules for Participation• Simplified cost-reimbursement
approach with enhanced use of lump sums and flat rates.
••• 30
3 sets of challenges, 4 types of activities, (funding schemes)” Draft
Some first and preliminary thinking (from ICT theme)
EuroSimE, 18-20.04.2011, Linz, Austria
Common Strategic Framework for EU R&I funding (2014+)
A challenge oriented R&I frameworkA shift in the drive: From means/instruments to goals
Societal challenges
Industrial leadership
Excellence in science
Roadmap based partn.
(Focus)
Open, light (be flexible)
Infrastr., skills(attract)
Piloting (test,
duffuse)
e.g. Living labs
e.g. Clean rooms,
Innovation clusters
E-Infrastruct.
Pilots
Pilots
••• 31
Summary
EUROPE 2020
- renewed emphasis on R&D&I as a basis for smart, sustainable and inclusive
growth.
MAFF 2014+, CSF
2011-2012 is key for the preparation: New opportunities for improvements and for
holistic integrated views to face grand challenges (EU and global)
Nanoelectronics has a major input to these processes
Modeling & Simulation – increasing importance
Participate in Call 8 !!!
« Time is ready. Let us profit from these exciting times and take action ---- together -----”
Beyond CMOS technology• New switches and interconnects with energy efficiency gain; • Emerging memories; • Nano-photonics devices and interconnects; • Carbon based electronic devices
Circuit-technology solutions • Architectures including energy efficiency, spin devices ferromagnetic logics, Si with molecular switches• Circuit design, methodology and tools addressing e.g. D-A-C• Technology addressing 3D integration, MtM, photon-electron integration, power dissipation, etc.• Modelling and simulation
Nano-manufacturing and Joint Equipment Assessment • Manufacturing approaches to Beyond CMOS and MtM and their integration with nanoCMOS including 3D• Metrology/inspection analysis concepts; assembly and packaging• Joint assessment of equipment/metrology, process solutions
Coordination and Support Actions • Access to training CAD tools, advanced technologies, design kits, education blocks, prototyping• Roadmap, benchmark and strategy papers• Stimulation of young people towards electronics careers, training, education• International cooperation – Japan, USA, Taiwan, Korea• Support coordination and standartisation actions, preparatory work for 450 mm
Objective 3.1: Very Advanced Nano-electronics Components
••• 36
ICT Work Programme 2013
• continuity with 2011-12 WP• effective bridge to the next CSF for R&I.
Budget: 1.53B€
Timing - three main phases: • Options and orientations: Sept.- Dec. 2011• Drafting: Jan. - March/April 2012• Decision: April/May-July 2012
••• 37
Common Strategic Framework for EU R&I funding (2014+)
3 sets of challengesSocietal Challenges
Health and wellbeing; Safe food and sustainable agriculture; Secure, clean and efficient energy; Green transport; less congestion; Efficient use of resources & materials; Inclusive and safe society