1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD Jim Hutchby – SRC U-In Chung - Samsung December 9, 2008
21
Embed
1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write.
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
ITRS Public ConferenceEmerging Research Devices
Preparations for 2009 ERD Chapter Re-write
Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD
Jim Hutchby – SRCU-In Chung - Samsung
December 9, 2008
2 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Hiroyugi Akinaga AIST Tetsuya Asai Hokkaido U. Yuji Awano Fujitsu George Bourianoff Intel Michel Brillouet CEA/LETI Joe Brewer U. Florida John Carruthers PSU Ralph Cavin SRC U-In Chung Samsung Byung Jin Cho KAIST Sung Woong Chung Hynix Shamik Das Mitre Erik DeBenedictis SNL Simon Deleonibus LETI Kristin De Meyer IMEC Michael Frank AMD Christian Gamrat CEA Mike Garner Intel Dan Hammerstrom PSU Wilfried Haensch IBM Tsuyoshi Hasegawa NIMS Shigenori Hayashi Matsushita Dan Herr SRC Toshiro Hiramoto U. Tokyo Matsuo Hidaka ISTEK Jim Hutchby SRC Adrian Ionescu ETH Kohei Itoh Keio U. Kiyoshi Kawabata Renesas Tech Seiichiro Kawamura Selete Rick Kiehl U. Minn Suhwan Kim Seoul Nation U. Hyoungjoon Kim Samsung
Atsuhiro Kinoshita Toshiba Dae-Hong Ko Yonsei U. Hiroshi Kotaki Sharp Atsuhiro Kinoshita Toshiba Atsuhiro Kinoshita Toshiba Franz Kreupl Qimonda Nety Krishna AMAT Zoran Krivokapic AMD Phil Kuekes HP Jong-Ho Lee Kyungpook Nation U. Lou Lome IDA Hiroshi Mizuta U. Southampton Murali Muraldihar Freescale Fumiyuki Nihei NEC Ferdinand Peper NICT Yaw Obeng NIST Dave Roberts Air Products Kaushal Singh AMAT Sadas Shankar Intel Satoshi Sugahara Tokyo Tech Shin-ichi Takagi U. Tokyo Ken Uchida Toshiba Yasuo Wada Toyo U. Rainer Waser RWTH A Franz Widdershoven NXP Jeff Welser NRI/IBM Philip Wong Stanford U. Kojiro Yagami Sony David Yeh SRC/TI In-Seok Yeo Samsung In-K Yoo SAIT Peter Zeitzoff Freescale Yuegang Zhang LLLab Victor Zhirnov SRC
Emerging Research Devices Working Group
3 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
year
Beyond CMOS
Elements
Existing technologies
New technologies
Evolution of Extended CMOS
More Than Moore
ERD-WG in Japan
4 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
New ERD/ERM Roadmapping Task
Determine which, if any, current approaches to providing a “Beyond CMOS” information processing technology is/are ready for more detailed roadmapping and enhanced investment.
5 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
2008 ERD/ERM Workshops Workshop topic Date Location Meeting
Emerging Research Memory Devices
April 2 2008
Bonn, Germany
ITRS Spring meeting
Emerging Research Architectures
July 10-11 2008
Santa Cruz, CA, USA
Semicon West
Evaluation of Beyond CMOS Logic Device Tech
July 12-13 2008
San Francisco, CA, USA
Semicon West
Emerging Research Logic Devices
Sept. 22 2008
Tsukuba, Japan
SSDM
Emerging Research Materials
Nov. 10 2008
Austin, TX, USA
MMM*
Emerging Research Materials
March 2009
Okinawa, Japan
* 53rd Magnetism and Magnetic Materials Conference
Co-sponsored by the National Science Foundation
6 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
11 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Nanotube FET
Band gap: 0.5 – 1 eVOn-off ratio: ~ 106
Mobility: ~ 100,000 cm2/Vsec @RTBallistic @RT ~ 300-500 nmFermi velocity: 106 m/secMax current density > 109 A/cm2
Vsd (V)0-0.4-0.8-1.2
I sd (A
)
Ph. Avouris et al, Nature Nanotechnology 2, 605 (2007)
Schottky barrier switching
12 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
AdvantagesCarbon-based Nanoelectronics ---
For scaled CMOS, potentially can .. Impact geometric scaling by providing an alternate
MOSFET structure, and Provide a high mobility, high carrier velocity,
MOSFET channel replacement material.
For a new information process technology, potentially can …
Leverage R & D for CMOS (above) to … Provide a technology platform enabling a new “Beyond
CMOS” information processing paradigm
13 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Carbon-based Nanoelectronics
The intent of this recommendation is to highlight Carbon-based Nanoelectronics for additional roadmapping and investment ---
while sustaining exploration of other candidate approaches for “Beyond CMOS” information
processing technology.
14 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Summary Prepared for the 2009 ERD Chapter re-write Conducting six workshops in collaboration with
NSF, SRC, and ERM (Five accomplished)– Evaluate technology entries for 2009– Respond to IRC request (see next bullet)
Responded to IRC request to identify one or more Beyond CMOS technologies for roadmapping and enhanced investment– Conducted in-depth evaluation of seven Beyond CMOS
technologies (including one device architecture)– Recommended Carbon-based Nanoelectronics to IRC
15 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008