1 ASES Semicon Taiwan 2011

1

Ver1.4 Nov.2011

Application Specific Exposure System(ASS)

For Device Manufacturing

2(Contents)

１．Introduction of Mejiro Precision,Inc.

２．General Market Trend and Overview of Mejiro Stepper

３．Introduction of Application Specific Exposure System (ASS)

４．Strategy for Device Production

５．3D Lithography by ASS

3(Contents)





4

Company overviewMejiro Precision Confidential

･Activities Design, research and development of optical system・Employees 40

Mejiro Precision aims at Fab-less Company.

The main business is research & development, and manufacturing has been consigned to the external cooperation company.

5

Business CompositionMejiro Precision Confidential

In three pole organization,The synergy effectis demonstrated.

Optics Reserch Institute

Light System Division

Light Components Division

Stepper(projection exposure machine)Custom-designed optical system

Light source and optics irradiation unitObjective lens

Optical technology

6

OrganizationMejiro Precision Confidential

Shareholders’ meeting

Managing Board

RepresentativeDirector CEOIchiyo Kotani

Business and DevelopmentSeiro Murakami

Auditor’s Meeting

RepresentativeDirector COO

Seiro Murakami

Optics ReserchInsutitute

Satoru Anzai

Optical systemDivision

Shinobu Tokushima

Optical ComponentsDivision

Takayuni Nishio

FinanceAdministration

Mamoru Nakagami

DesigningDepartment

Yukio Kakizakii

7(Contents)





8

General Market TrendMejiro Precision Confidential

Electron ray・X ray

Excimer laser

i ray

g ray

Line & Space 0.1μ 0.2μ 1μ 10μ

Exposure area

Exposure machine for Electronic circuit board & package

Exposure machine for semiconductor

Exposure machine for ＬＣＤ

５ｍｍ□～22ｍｍ□

100ｍｍ□～200ｍｍ□

150ｍｍ□～500ｍｍ□

Contact/Proximity ContactExposure Machine Step & Exposure Machine

1 billion yen

Price

0.3 billion yen

0.1 billion yen

0.1 billion yen

ＭＭＳ

ＡＳＳ

Application Specific Exposure System

9

Overview of Mejiro Precision StepperMejiro Precision Confidential

Ｓｔeｐｐｅｒ　　　Ser ies

Ｍｏｄｅ　Ｎｏ.

ExposureＡｒｅａ

（ｍｍφ）

Ｒｅｓｏｌｕｔｉｏｎ（μｍ）

Substrate Size ＡｐｐｌｉｃａｔｉｏｎProduct ion beginn ing

Numbers of sales

P804 200 5 500mm x 600mm 2003

P806 200 3 .5 500mm x 600mm 2008/spr ing

P141 355 5 500mm x 600mm 2009/spr ing

P142 355 3 .5 500mmｘ600mm 2012/spr ing

A 10-20 0 .5-1 .0300mm x 300mm2" - 12"Wafer

SAW, ASIC 2010/spr ing

B 20-50 1-2 .5300mm x 300mm2" - 12"Wafer

LED, MEMS, LCD 2009/summer

C 50-110 2 .5-∞300mm x 300mm2" - 12"Wafer

advaced　package ,ceramic

2009/summer

ＡＳＳSpecial

Ｃｋ 100 1300mm x 300mm2" - 12"Wafer

LED, MEMS 2011/autumn

ＡＳＳ

ＭＭＳ 16PCB &

package

9

10(Contents)





11

Introduction of ASSMejiro Precision Confidential

・

Concept

・

Achievement of Wide Exposure Specification

・

Practicable Productivity

・

Module Concept for High Cost Performance

・

Back-Side Alignment

・

Substrate Holder

・

Edge Blind Mechanism

・

Small and lightweight

･Introduction of ASS(Application Specific Exposure System)

12

ConceptMejiro Precision Confidential

Demand for stepper from markets other than mass production field

･Wide-ranging exposure specification→One exposure machine･can correspond to various applications. ･has Multi generation character that can correspond to the future miniaturization

･High Throughput→It is not a mere experimental exposure machine.

･Low price

Wide-ranging exposure specification

High Throughput

Low price

13

Achievement of Wide Exposure SpecificationMejiro Precision Confidential

NA is large. (high resolving power)

NA is small(low resolving power)

Exposure area is small Exposure area is large

Open NA aperture Squeeze NA aperture.

１-１

Introduction of NA changeable mechanism

14


Lens Series and Application Range

120

110

100

90

80

70

60

50

40

30

20

10

0

Resolving power（μｍ）

４μｍ

110ｍｍΦ

１μｍ

20ｍｍΦ０．５μｍ

10ｍｍΦ

Exposure

fie

ld （

dia

mete

r, m

m)

Lens　A Lens　B Lens　C

２．５μｍ

50ｍｍΦ

５

ＳＡＷ

ＬＥＤ

Ceramic

ＬＣＤ

ＭＥＭＳ

Th in film

magne t ic

heads

Elec tron ic

c irc u it board

& package

１０．５

ＡＳＩＣ

Lens　Ck

１-２

Continuously Covered with Three Kinds of Lenses

15


A lens B lens C lens

The total length of lens

The total length of three kinds are uniformed

Main body of stepper

→Lenses can be exchanged in one week at the customer’s site

A wide exposure specification and a multi generation are enabled with one exposure machine.

２-１

Lenses can be exchanged at the customer site.

16


Lens B Lens Ａ

Projection Flame Main Body

• Easy exchange on customer’s site

• Short period work schedule

• Mejiro’s engineer can change the lens on customer’s manufacturing area.

→

Changing lens and Readjust within 1 week ,and checking within 0.5 week.

２-２

Lenses Exchange mechanism

17

Practicable ProductivityMejiro Precision Confidential

The technology of stepper (MMS) for electronic circuit board and the package mass production was applied as it was.

･Small size and lightweight X/Y stage( 300mmx300mm 12” stroke capability )

･Optical system of high illumination

･Real-time AF mechanism

･Global alignment function

High throughput ( 30 second / 12 "Wafer substrate)

→A small-scale production line can be constructed.

High Throughput

18

Module Concept for High Cost PerformanceMejiro Precision Confidential

ASS stepper is composed of a lot of independent functional elements

(more than 50 kinds of modules).

Illumination optics

Lamp

Reticle system

Projection lens

Substrate stage

Substrate transfer system

Reticle change system

An individual module corresponds to all the possible function variations with the possibility that the customer uses it.

The module can be assumed that all are optional, and be selected.

modular framework

The minimum requirement can be composed for the customer.

High Cost Performance

Module Concept

19

Back Side AlignmentMejiro Precision Confidential

Surface alignment

AlignmentMicroscope

Prism by return

Back side alignment

Alignment mark

Back Side mark

20

Substrate HolderMejiro Precision Confidential

Vacuum by

Sponge type material(多孔質）

→

Soft vacuum contact by innumerable air hole

Peripheral Cramp Skirt

Stage Holder for substrate

Flatness is secured without damaging the substrate.

Substrate

21

Small and LightweightMejiro Precision Confidential

ASS front face ASS side face

Total Weight 1.5 ton

22(Contents)





23

Strategy for Device ProductionMejiro Precision Confidential

Strategy for Device Production

1. Advanced Technologyfor Enhanced Resolution

2. Lithography Roadmap & Mejiro Strategy

24

1-1 Advanced TechnologyMejiro Precision Confidential

Resolution

= ｋ

＊

λ／ＮＡ

λ

ＮＡ

Depth of Focus

= ±λ／ＮＡ２

Defocus

NA High NA Low

Image Contrast

→Large Change

Image Contrast

→Ｓｍａｌｌ

Ｃｈａｎｇｅ

Advanced Technology for Enhanced Resolution

25


Higher NA lens can resolve critical dimension pattern, but reduces focus depth rapidly.

When high NA is used for the rough pattern, the focus depth becomes shallow.

In the rough pattern, large DOF can be obtained by lower NA according to pattern size.

・Fine IC,LSI（DRAM, CPU Logic, etc)

Super Flat（≤1μｍ）

→

No DOF Requirement

→

Larger NA →

Finer Pattern

・Package, Bump, LED, Ceramic, MEMS….

Large凸凹（10～100～500μｍ）

→

Large DOF Requirement

→

Optimum NA → Maximum DOF

26


DOF Comparison in NA 0.3 Fixed NA

NA 0.2 Fixed NA

NA 0.2 with Variable NA

27


・Introduction of Variable NA Optics enables to obtain best resolving power (maximum DOF) at various pattern size.

・Sub-micron pattern generation

1～0.8μｍ

→

Resolution Enhancement technology (RET) can

enable much higher resolution and depth of focus.

ASS stepper can introduce Annular Illumination as RET.By Annular Illumination introduction、DOF increase is 20-30% compared to conventional illumination in optimum condition.

≤

0.8μｍ

→

It is possible to correspond to 0.5μm pattern by

exchanging for A lens.

・As a result, deep focus depth can be secured in each generation of device manufacturing.

28Mejiro Precision Confidential2. Lithography Roadmap & Mejiro Strategy

≥ ２μｍ１～２μｍ０．２～１μｍ０．２μｍ

≥

Ｇａｐ

Ａｌｉｇｎｅｒ

Ｃｏｎｔａｃｔ

Ａｌｉｇｎｅｒ

Ｌｏｗ

ｅｎｄ

ｓｔｅｐｐｅｒ

Ｈｉｇｈ

ｅｎｄ

ｓｔｅｐｐｅｒ

Ｇｅｎｅｒａｌ

Ｔｒｅｎｄ

Ｍｅｊｉｒｏ

Ｓｔｒａｔｅｇｙ

Single ＡＳＳ

machine for Multiple Lithgraphy generations

ＢＬｅｎｓ + Ｖａｒｉａｂｌｅ

ＮＡ

ＢＬｅｎｓ + ＲＥＴ（Annular ｉｌｌｕｍｉｎａｔｉｏｎ）

Replace from Ｂ

Lens ｔｏ

Ａ

Ｌｅｎｓ

29

３Ｄ lithography by ASS stepper

September, 2011

Mejiro Precision Confidential

30

Lens Series and Application Range

120

110

100

90

80

70

60

50

40

30

20

10

0

Resolving power（μｍ）

４μｍ

110ｍｍΦ

１μｍ

20ｍｍΦ０．５μｍ

10ｍｍΦ

Exposure

fie

ld （

dia

mete

r, m

m)

Lens　A Lens　B Lens　C

２．５μｍ

50ｍｍΦ

５

ＳＡＷ

ＬＥＤ

Ceramic

ＬＣＤ

ＭＥＭＳ

Th in film

magne t ic

heads

Ele c tron ic

c ircu it board

& package

１０．５

ＡＳＩＣ

NA 0.06L/S 4um→

DOF ≒ 100 um

NA 0.09L/S 2.5um→

DOF ≒ 45 um

NA 0.2L/S 1um→

DOF ≒ 10 um

ASS and Depth of Focus (DOF）


31Basic concept

+１st Diffracted light

The 0th light

Resolution Limit

－１st Ｄiffracted light

Non-resolved pattern


32Control of reticle transmittance ratio

by non-resolved dot pattern

80% 90%

Intensity 64% 81%

1um□ non-resolved dotArea 50um2

Transmittance


33Reticle making for 3D exposure

The reticle

with continuous density distribution is made corresponding to three dimension forming. The density is decided by the number of patterns of the non-resolved dot for each area.

Light intensity distribution after reticle penetration

→

It corresponds to 3D forming.

Non-resolved dot such as 1um □


34

The relation between absorption energy (E) by the exposure and resist dissolution depth (Z) are experimentally decided.

Resist thickness

E1 E 2 E 3 ････

Z 1 Z 2 Z3

zZ3 Z 2 Z1

E1

E2E3

Dissolution depth function Z = D (E) is decided.

→E(Z) corresponding to dissolution depth Z is calculated.

E(Z) = D (Z)

Emin.

-1

Plot

E

Absorption energy and resist dissolution depthMejiro Precision Confidential

35Ａｃｔｕａｌ

Ｒｅｓｕｌｔ

ｆｏｒ

Ｍｉｃｒｏ

Ｌｅｎｓ

Ａｒｒａｙ

Without thickness correction With thickness correctionby dissolution depth function Z = D (E)


36

Presentation is ended above. Thank you for listening.

1 ASES Semicon Taiwan 2011

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