090529 ham news 01 large - Home | Hamamatsu Photonics · · 2012-11-0351 High voltage power supply 52 New high sensitivity photon counting head ... PET is a nuclear medicine imaging

New Streakscope C10627

SYSTEMS PRODUCTS PAGE 59

Mini-spectrometerC10988MA

SOLID STATE PRODUCTS PAGE 33

Lightningcure®

LC-L2

ELECTRON TUBE PRODUCTS PAGE 50

NEWS2009

01


ORCA camera line-up

4 Company News

8 Application Report

SOLID STATE PRODUCTS

11 SSD for LAT/FGST

12 Line-up of MPPC & MPPC module

13 MPPC® (Multi-Pixel Photon Counter)

14 MPPC®

16 Illuminance sensors

18 Illuminance sensor/Colour sensor

22 Photo IC diode

23 InGaAs multichannel detector head

24 Colour sensor

26 Digital compensation type APD module

28 High-performance CCD image sensors for

measurement instruments

30 Mini-spectrometer TG series

33 Mini-spectrometer

36 InAsSb photodiode

37 Back-thinned CCD

38 InGaAs PIN photodiode

40 Infrared LED

42 Transm./Receiver photo IC for optical link

44 16-element Si photodiode array

46 Photodiode arrays with amplifi er

LASER PRODUCTS

48 Mid Infrared Quantum Cascade Laser (QCL)

ELECTRON TUBE PRODUCTS

49 PhotoIon bar

50 Lightningcure®

51 High voltage power supply

52 New high sensitivity photon counting head

53 Xenon lamp

54 UV-VIS light source

55 MCP for TOF-MS

SYSTEMS PRODUCTS

56 HCImage

58 iPhemos SD

59 New Streakscope

60 LED light metering and photometry systems

62 TDI camera line-up

65 X-ray line scan camera

66 PMA-20

68 ORCA camera line-up

SERVICE

69 Fax reply

70 Exhibitions 2009

71 Hamamatsu Photonics Europe

Content

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Highlights

News 2009 Vol. 12

ELECTRON TUBE PRODUCTS 50 Lightningcure®

LC-L2

SOLID STATE PRODUCTS 33 Mini-spectrometer C10988MA

SYSTEMS PRODUCTS

59 New Streakscope C10627

News 2009 Vol. 1 3

IC defect localisation with direct tester

head docking

Modular microscope system - confi gured

to include emission microscopy and laser

scan microscopy

High mechanical and optical precision

High stability

800 mm height

iPhemos SD


News 2009 Vol. 14

Company News

Hamamatsu Photonics’ commitment to Photonics Technology

For more than 55 years, Hamamatsu Photonics’ corporate philosophy stresses

the advancement of Photonics and the application of Photonics technology, a

philosophy which remains unchanged today. The company supports the

advancement of industry and research, through discovery of new opportunities

using Photonics technology. Building strong working relationships is central to

this philosophy and Hamamatsu aims to create partnerships with our

customers, enabling us to provide the best possible service.

Hamamatsu Photonics’ commitment to research and development using their

extensive knowledge and know-how in Photonics technology has led to the

generation of “state-of-the art”, high quality opto-electronic products and a

wealth of new manufacturing processes and techniques.

In February 2009, Hamamatsu Photonics held The Photon Fair Exhibition in

Hamamatsu City, Japan as a showcase for their current and future technolo-

gies. The theme of the Photon Fair was “What can we do

with light”. Each of the manufacturing divisions had show-

case themes, “MOEMS at the frontier of opto-semiconductor

devices”, “Electron tube technology; today and tomorrow”,

“Optical Measurement systems that support society” and

“Principles, applications and the future of laser technology”.

This exhibition demonstrated the vast range of products and

technologies offered by Hamamatsu Photonics and the diver-

sity of markets and applications in which they are used.

In this issue of Hamamatsu News, we will introduce many

new and enhanced products. We will also announce further

expansion of the facilities at Hamamatsu Photonics, Japan,

which will extend research and development and increase

their manufacturing capacity.

News 2009 Vol. 1 5

Development of PET tracers to realise early diagnosis of cancer

On the 8th January 2009 Hamamatsu Photonics K.K. (Teruo Hiruma, Chairman

of the Board and CEO, Hamamatsu Shizuoka pref. Japan) and Bayer Schering

Pharma (Andreas Fibig, Chairman of the Board of Management, Berlin Germa-

ny) have signed a licensing agreement for the use of novel substances in the

fi eld of molecular imaging for cancer. Within the agreement, Bayer Schering

Pharma acquires the worldwide exclusive rights for research, development and

commercialization of a group of molecules that specifi cally bind to malignant

tumor cells. In combination with positron emission tomography (PET), these

tracers could potentially improve the diagnosis of a variety of cancers.

“We have developed the novel tumor PET ligand based on a substance to be

incorporated into tumor cells through the carrier molecules highly expressed

on the tumor cell membrane. Since the chemical structure of this PET ligand

is designed not to be identifi ed by the carrier system on the normal cell

membrane, the location of tumor tissue can be detected with high contrast in

the tumor-bearing animals with PET. We utilized for development of the tumor

PET ligand the technology, knowledge and know-how cultured until now.”

said Dr. Hideo Tsukada, manager of PET Center, Hamamatsu Photonics.

Licensing agreement between Hamamatsu Photonics K.K. and Bayer Schering Pharma

“With this inlicensing in the fi eld of tumor diagnosis, we

ideally expand our existing project portfolio in the area

of molecular imaging of cancer“, explained Prof. Dr. Hans

Maier, head of the business unit Diagnostic Imaging at

Bayer Schering Pharma. “The medical need for a more

specifi c diagnosis of malignant tumors is very high, and

BSP anticipates in the long run to further improve the early

diagnosis of certain cancers with these substances.“

The substances described in the agreement specifi cally bind

to cancerous cells in the body. The tracers are labelled with

a short-life radionuclide and thus can be employed for PET

imaging. PET is a nuclear medicine imaging procedure, with

which molecular processes can be visualized in vivo, for

example those in tumor cells. In contrast to the presently

common procedures in PET imaging of cancer, these new PET

tracers could help to possibly better differentiate malignant

tumors from benign tissue alterations and to allow a more

precise staging of the cancer.

News 2009 Vol. 16

Company News

Construction of a new facility for Integral Optics

Hamamatsu Photonics announce the construction of a new Integral Optics

Building for the development of ultra-compact products which combine optical

systems with photonic devices.

The new facility will be located in the grounds of the Central Research

Laboratory, Hamamatsu City, Japan and the ground breaking ceremony was

held on the 7th January 2009.

The Integral Optics Building will have four fl oors and 6,067 square metres of

fl oor space. It will serve as a technology centre for the many manufacturing

divisions of Hamamatsu Photonics and will house both the R&D groups, and

the equipment that is used, for the development of integral optics based prod-

ucts. It will also enable Hamamatsu to consolidate it’s expertise for the various

technologies related to integral optics, which until now had been distributed

throughout the various divisions of the company. These technologies include

those for optical systems design, optical thin fi lm manufacturing and MOEMS/

opto-nanotechnology device fabrication.

The Central Research Laboratory currently has cafeterias in many different

buildings and the entire 4th fl oor of the new building will provide a multi-

purpose cafeteria hall to provide the researchers with a communal place to

meet, exchange ideas and enhance mutual communication.

Through this consolidation the company will be better positioned to

accumulate new know-how in integral optics and improve effi ciency in new

product development.

Concept drawing of Integral Optics Building.

News 2009 Vol. 1 7

The opening ceremony of the new “Product Management Centre” was held

on the 11th November 2008. The new building is located in the grounds

of Hamamatsu Photonics’ Central Research Laboratory, Hamamatsu City,

Japan. The new Centre will house the company’s Product Management

Division and contains a radio wave anechoic chamber for the measurement of

electromagnetic emission and susceptibility to electromagnetic interference of

their products.

Hamamatsu Photonics new facility for EMC evaluation of products

Hamamatsu Photonics are pleased to announce the expansion of their

Electron Tube Division facility in Iwata City.

The offi cial groundbreaking ceremony for New Building #2 was held on the

12th December 2008. The new building will be constructed on the site of the

former Building #2, but will provide approximately 4 times the fl oor space of

the original facility.

Building #2 will be 15,447 square metres and will house 200 people with R&D

and production for scintillators, spot light sources, xenon lamps, deuterium

lamps and other light sources and the novel Stealth Dicing technology.

The Scintillator Product Division will occupy approximately 50% of the total

space and the new facility will enable a 3-fold increase in production.

This exciting expansion will strengthen Research & Development and boost

the manufacturing capacity of Electron Tube Division to enable it to grow its

annual sales by 10 billion Japanese Yen.

Construction of a new manufacturing / R&D facility at Hamamatsu Photonics, K.K., Electron Tube Division

Completion of the new facility is around January 2010 with

manufacturing estimated to start in February 2010.

This new facility will enable the company to consolidate all

aspects of product testing, safety and environmental issues

such as electromagnetic compatibility evaluation, product

safety testing, environmental management, export control and

medical device safety management, in one building. Consoli-

dation of these functions will allow Hamamatsu Photonics

to more effi ciently and reliably comply with product safety

standards and other regulatory requirements.

Concept drawing of Building #2.

News 2009 Vol. 18

Application Report

Choosing the best UV detector for your application

The ultraviolet (UV) spectrum encompasses wavelengths that are shorter

than those visible to the human eye and longer than X-rays. When it comes

to deciding on the right detector technology to adopt in your UV application,

you will fi nd many options on the market each with a variety of pros and cons.

This article outlines the technologies that customers will come across on their

search for UV detectors and offers advice on performance levels.

Phototubes and Photomultipliers

Phototubes appeared about one hundred years ago and were the fi rst scientifi c

devices to measure UV light. Exploiting the photoelectric effect, phototubes

generally consist of a metallic or semiconductor material coated inside a

vacuum chamber to form a photo-cathode.

When UV photons of high enough energy are incident on the cathode, photo-

electrons are emitted into the vacuum and are attracted to the anode at high

electrical potential. The resulting photocurrent gives a quantitative measure-

ment of the intensity of the UV light arriving at the photocathode. The expres-

sion E=hc/ , where E is the photon energy, shows that the photocathode

material must have a work function greater than 5 eV to detect 254 nm light

from a mercury lamp.

In order to measure lower UV intensities, these original detectors were

replaced by the photomultiplier tube (PMT). A PMT’s vacuum tube contains a

series of intermediate dynodes that provide a high level of gain for the photo-

electrons emitted from the photocathode. This noise-free gain means that the

output at the PMT anode can be one million times greater than the original

signal.

Today, phototubes have largely been superseded by semiconductor detectors

(in particular photodiodes, which are discussed later) but the PMT’s ability

to produce highly amplifi ed signals without any increase in associated noise

levels, means that it remains the detector of choice in many analytical

measurement applications. Examples include UV-VIS spectrophotometers,

atomic absorption spectrometers and DNA sequencers to name a few.

Although most photocathodes are capable of detecting UV photons, one

limiting factor is the entrance window of the vacuum tube. This is usually made

of a borosilicate glass so UV photons below 300 nm cannot be detected by

the PMT. To detect shorter UV wavelengths, special window materials such as

synthetic silica (to 160 nm), UV glass (to 185 nm) and magnesium fl uoride (to

115 nm) are required (see Figure 1).

FIGURE 1. A selection of current photomultiplier tubes showing glass,ceramic and metal constructions ranging in size from around 1 cm to20 inches.

News 2009 Vol. 1 9

Photodiodes

Photodiodes are the UV detector of choice for many applications today.

Electron-hole pairs are generated within a semiconductor when its bandgap

is less than the energy of an absorbed UV photon (approximately 3.5 eV at

365 nm). The resulting photocurrent gives a measure of the incident UV light

intensity.

The most common semiconductor detector is the silicon photodiode (a

selection is shown in Figure 2). With a bandgap of 1.12 eV, this device can

detect from 400 nm right through to around 1100 nm. Silicon oxides usually

form on the front surface of the photodiode during its fabrication, which act as

a passivation layer. As this is essentially a glass layer, it absorbs UV radiation

making most silicon photodiodes insensitive to UV light.

That said, it is possible to produce silicon devices that are highly sensitive to

UV radiation with quantum effi ciencies in excess of 80% by modifying the

fabrication and passivation processes. As with vacuum tubes, using a quartz

glass window permits detection down to 190 nm and both VUV and extreme

UV wavelengths can be detected using a photodiode without any window.

Today, many other semiconductor materials that have higher bandgap energies

than silicon are available on the market. Materials such as GaAsP, GaN and

SiC have the advantage of being more “UV specifi c” but as they are not

manufactured in such large volumes they tend to be far more expensive than

comparable silicon photodiodes, with wider variations in performance from

batch-to-batch.

It is important to be aware that photodiodes used to detect UV light can age

quite signifi cantly over time. For example, you could see the sensitivity of

the device degrade and the dark current (or noise) of the detector increase.

Hamamatsu has been perfecting its UV silicon photodiode process since the

early 1970s and now achieves very low ageing characteristics (see Figure 3).

Applications that make use of UV-sensitive silicon photodiodes fall under two

broad categories. The fi rst is analytical applications such as UV-VIS spectro-

photometers, DNA sequencers, blood and urine analysers, pollution monitor-

ing, semiconductor inspection, and clinical chemistry analysers. The second

is industrial and consumer applications including sun exposure meter, boiler

fl ame monitor, water sterilization, germicidal lamp monitor, curing of inks and

resins and more.

FIGURE 2. A selection of UV silicon photodiodes.

FIGURE 3. This tracks the sensitivity of Hamamatsu UV silicon photodiodes over four years showing that the performance is stable to within ~0.5% even at 250 nm (deep UV).

The following sub-classifi cations are applied to UV light:

UVA (315 to 400 nm) is also known as “black light”. These wavelengths are

present in sunlight and cause the skin to tan, however, too much exposure

destroys both vitamin A and the collagen fi bres in organic tissue.

UVB (280 to 315 nm) causes sunburn and over exposure can severely damage

the eyes and skin, as well as result in a variety of melanomas.

UVC (200 to 280 nm) is far more energetic and dangerous than UVB. UVC is

sometimes referred to as germicidal UV as it is deadly to most forms of life, but

luckily these wavelengths are completely absorbed in the Earth’s ozone layer.

Light in this range is useful in a range of scientifi c measurements.

VUV stands for vacuum ultraviolet and spans from 200 down to 10 nm. These

wavelengths are absorbed by oxygen in the Earth’s atmosphere so measurements

of VUV are usually made in vacuum conditions.

Classifying UV wavelengths

News 2009 Vol. 110

Imaging applications

Various versions of both vacuum tube and semiconductor technology are

available for imaging applications. Image intensifi ers (shown in Figure 4) for

example are based on the same photocathode and vacuum tube technology as

PMTs but instead of having an anode output, they use a micro-channel plate

(MCP) to multiply the photoelectrons onto an output phosphor screen. This

gives a green image with very high signal gain that is often associated with

night vision applications. UV sensitive intensifi er tubes are used in a variety of

specialised analytical and bioscience applications, often looking at very low

levels of fl uorescence.

Semiconductor imaging devices fall into two main classifi cations: CMOS

and CCD. CMOS and CCD imagers are both fabricated from silicon, and like

photodiodes, should be capable of detecting and imaging UV radiation. CMOS

sensors are essentially a matrix of individual silicon photodiode pixels. Devices

also incorporate an “on chip” multiplexor (sequential switch) and a charge

amplifi er as well as additional electronic functions all fabricated using a CMOS

semiconductor process.

Most consumer CMOS devices are not sensitive to UV light due to the silicon

oxide layer on the surface of the semiconductor. However, as with silicon

photodiodes, it is possible to modify the fabrication process to produce UV

sensitive CMOS image sensors.

Most commercial CCD products used for digital imaging are similarly not

sensitive to UV radiation. Again, this is due to the presence of silicon oxides

and polysilicon gate electrodes on the front surface of the sensor, which

absorb UV and even blue light.

To produce a CCD that is sensitive to UV, it is necessary for light to enter the

semiconductor from the rear (back) side. To maintain the image resolution,

the silicon substrate must also be “thinned” to just 20 or 30 microns. This

requires more complicated silicon processing and sophisticated handling and

packaging of the delicate thinned wafer. These additional steps make the

production of so-called “back-thinned” CCDs signifi cantly more expensive

than consumer-type visible CCDs. The benefi ts however are a sensor with a

quantum effi ciency much greater than 50% in the UV range and over 90% in

the visible. Examples of back-thinned CCDs are shown in Figure 5.

FIGURE 4. A selection of image intensifi er tubes.

FIGURE 5. A variety of back-thinned CCDs, some with integrated peltier coolers to reduce dark signals allowing extended integration times for low-light-level imaging.

Many companies supply the various UV detectors outlined in

this article, however only Hamamatsu Photonics manufactures

all of the technologies described and can offer advice on the

most suitable device for any application.

Author: Tim Stokes, Hamamatsu Photonics UKThis article fi rst appeared in OLE Magazine June 2008.

Application Report


News 2009 Vol. 1 11

SSD for LAT/FGST(Fermi Gamma-ray Space Telescope)

A certifi cate of appreciation sent by NASA

SSD wafer

Large surface-area sensors for gamma-ray telescope mounted in FGST

The FGST (Fermi Gamma-ray Space Telescope) is a man-made satellite jointly

developed by Japan and the US. The detector instrument (LAT: Large Area

Telescope) in this satellite uses approximately 10,000 SSD (silicon strip

detectors) that we have developed. These SSD are sensitive to high-energy

particles including gamma-rays and have a large number of strip-shaped active

areas made by sophisticated semiconductor process technology. This allows

measuring the energy and position of the incident gamma-rays. The FGST will

observe high-energy gamma-rays emitted from giant black holes in the Galaxy

and there are hopes that it will fi nd evidence of new laws of physics. We

received a certifi cate of appreciation from NASA for our contribution to this

project.

InGaAs image sensor integrated in “Ibuki”

Earth observation sensors mounted in the "Ibuki (GOSAT)" greenhouse gas observing satellite

The main cause of global warming is carbon dioxide which is emitted by

factories and the cars we use in our daily lives. The Kyoto Protocol adopted

in 1997 established limits starting with the advanced industrialized countries

who would strive to lower their carbon dioxide emissions (goal of 6 to 8%

reduction). The greenhouse gas observing satellite "Ibuki" was launched on

January 23, 2009 to observe the entire Earth from space and send us detailed

data on the concentration distribution of carbon dioxide which is the major

cause of greenhouse gases. A greenhouse gas observation sensor (TANSO),

which serves as the observation device in the "Ibuki" satellite, uses various

sensors we manufactured.


News 2009 Vol. 112

NEW NEW NEWPRELIMINARY

The MPPC is a semiconductor photodetector with high gain and high quantum

effi ciency capable of photon counting at room temperatures. Our wide-ranging

MPPC product line includes single-element types with active areas of 1 mm by

1 mm, large-area arrays, and TE-cooled types. We also provide MPPC modules

to help users easily obtain the superior characteristics offered by the MPPC

technology.

Line-up of MPPC & MPPC module

MPPC

TypeMetal

CeramicPlastic

(surface-mount type)Array

TE-cooled

Photo

Type No.S11028

series

S10362-11

series

S10362-11

series

S10362-33

series

S10362-11

series

S10931

series

S10984

series

S10985

series

S11064

series

Effective active area

(mm)1 x 1 1 x 1 1 x 1 3 x 3 1 x 1 3 x 3

1 x 4

(1x4ch array)

6 x 6

(2x2ch array)

12 x 12

(4x4ch array)

Pixel size (µm)

[Number of pixels]

25 x 25

[1600]

25 x 25

[1600]

25 x 25

[1600]

25 x 25

[14400]

25 x 25

[1600]

25 x 25

[14400]

25 x 25

[1600/ch]

25 x 25

[14400/ch]25 x 25

[14400/ch]

50 x 50

[400]

50 x 50

[400]

50 x 50

[400]

50 x 50

[3600]

50 x 50

[400]

50 x 50

[3600]

50 x 50

[400/ch]

50 x 50

[3600/ch] 50 x 50

[3600/ch] 100 x 100

[100]

100 x 100

[100]

100 x 100

[100]

100 x 100

[900]

100 x 100

[100]

100 x 100

[900]

100 x 100

[100/ch]

100 x 100

[900/ch]

Spectral response range (nm) 320 to 900

MPPC module

C10507-11 series C10751 series

Standard type

(Built-in S10362-11 series)

CE-compliant type

(Built-in S10362-11 series)


News 2009 Vol. 1 13

MPPC® (Multi-Pixel Photon Counter)S10931 series

NEW

Photon detection effi ciency vs. wavelength (measurement example)Ph

oto

n d

ete

ctio

n e

ffic

ien

cy* (

%)

Wavelength (nm)

0

10

20

30

40

50

60

100

90

80

70

300 400 500 600 700 800 900

(Ta=25 deg.C.)

* Photon detection efficiency includes effects of crosstalkand afterpulses.

S10931-050P

KAPDB0157EB

Dimensional outlines (unit: mm)

KAPDA0125EA

0.925 ± 0.15

4.35

0.42

5 ±

0.15

1.0

Index mark 0.2

Active area

3.0 × 3.0

1.45

0.3

3.8

5

1.0

Photosensitive

surfaceCathode

Anode

New type of Si photon-counting device, Active area: 3 x 3 mm

The MPPC is a new type of photon-counting device made up of multiple

APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is

an opto-semiconductor device with excellent photon-counting capability and

which also possesses great advantages such as low voltage operation and

insensitivity to magnetic fi elds.

Features

Excellent photon-counting capability (excellent detection

effi ciency versus number of incident photons)

Room temperature operation

Low bias (below 100 V) operation

High gain: 105 to 106

Insensitive to magnetic fi elds

Excellent time resolution

Compact size

Simple readout circuit operation

Applications

Fluorescence measurement

Biological fl ow cytometry

DNA BIO-chip sequencer

Environmental analysis

PET

High-energy physics experiments

Electrical and optical characteristics (Typ. Ta=25 deg.C., unless otherwise noted)

Parameter SymbolS10931

Unit-025P -050P -100P

Fill factor*1 - 30.8 61.5 78.5 %

Spectral response range 320 to 900 nm

Peak sensitivity wavelength p 440 nm

Recommended operating

voltage range- 70 ±10*2 V

Dark count*3 - 4 6 8 Mcps

Dark count Max.*3 - 8 10 12 Mcps

Terminal capacitance Ct 320 pF

Gain M 2.75 x 105 7.5 x 105 2.4 x 106 -

*1: Ratio of the active area of a pixel to the entire area of the pixel.

*2: For the recommended operating voltage of each product, refer to the data attached to each product.

*3: 0.5 p.e. (threshold level).

Note: Each value was measured at recommended operating voltage.

The last letter of each type number indicates package materials (C: ceramic, P: plastic).

S10362-11 series S10931 series


News 2009 Vol. 114

MPPC®

S11064 series, S10984 series, S10985 series

The MPPC is a so-called Si-PM (Silicon Photomultiplier) device. It is a photon-

counting device consisting of multiple APD pixels operating in Geiger mode.

Each APD pixel of the MPPC outputs a pulse signal when it detects one

photon. The signal output from the MPPC is the total sum of the outputs

from all APD pixels. The MPPC offers the high performance needed in photon

counting and is used in diverse applications for detecting extremely weak light

at the photon-counting level.

Arraying the MPPC chips enables effi cient coupling to scintillators. An MPPC

array can be coupled, for example, to LYSO (lutetium yttrium orthosilicate)

scintillators along with circuitry to confi gure a detector module likely to prove

ideal for PET (positron emission tomography) applications. This allows dual

modality imaging such as PET/CT and PET/MRI in nuclear medicine.

Specifi cations

ParameterS11064

Unit-025P -050P

Number of channels 16 (4 x 4) ch

Effective active area/ch 3 x 3 mm


Pixel size 25 x 25 50 x 50 µm

S11064 series: 4 x 4 ch array

The S11064 series is a 4 × 4 channel large-area MPPC array made up of

individual active areas that are each 3 mm by 3 mm and mounted in high

densities on SMD (surface mount device) packages. Characteristics of each

channel element are tested prior to assembly in order to minimize output

fl uctuations in gain uniformity even when operated with a single bias power

supply.

NEW

NEW


News 2009 Vol. 1 15

Specifi cations

ParameterS10984

Unit-025P -050P -100P




Pixel size 25 x 25 50 x 50 100 x 100 µm


The S10984 series is a 4-channel MPPC linear array with active areas of

1 mm by 1 mm each. Due to its monolithic structure, there are no gaps

between elements.

Specifi cations

ParameterS10985

Unit-025C -050C -100C




Pixel size 25 x 25 50 x 50 100 x 100 µm


The S10985 series is a 2 × 2 channel MPPC array with active areas of 3 mm

by 3 mm each. This array can be used as a large area MPPC with a total

active area of 6 mm by 6 mm. Due to its monolithic structure, there are no

gaps between elements.

NEW

NEW


Spectral response

20

40

60

80

100

0

Re

lative

se

nsitiv

ity (

%)

KPICB0129EANWavelength (nm)

200 1000800600400 1200

(Typ. Ta=25 deg.C., VR=3.3 V)

S11154-01CT

Human eyesensitivity

News 2009 Vol. 116

Illuminance sensorsS11154-01CT

Photo IC diode improved margin of colour characteristics

S11154-01CT

Illuminance sensor with reduced colour temperature errors and with

spectral response nearly equal to human visual sensitivity.

The S11154-01CT is a photo IC diode that features lower colour temperature

errors in a range from 2800 K to 7200 K and provides spectral response nearly

equal to human visual sensitivity.

Electrical and optical characteristics (Typ. Ta=25 deg.C.)

Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range - 480 to 640 - nm

Peak sensitivity wavelength p - 580 - nm

Dark current ID VR=5 V - 1.0 50 nA

Photocurrent IL VR=5 V, 2856 K

100 lx- 95 - µA

Rise time tr 10 to 90 %

VR=7.5 V

RL=10 k!

=560 nm

- 6.0 - ms

Fall time tf - 2.5 - ms

1 mm

NEW


News 2009 Vol. 1 17

Line-up of illuminance sensors (Applications include brightness adjustment for large screen TV and cell phone’s LCD backlight)

Type No. Product type OutputPackage

(mm)

Reverse voltage

[Supply voltage]

Spectral response

range (nm)

Photo current*

2856 K. 100 lx

Rise time

(ms)Photo

S9648-100Photo IC

diode

Analog

current output

"5 x 3.5t

(Top view)-0.5 to +12 V 300 to 820 0.26 mA 6

S9067-101Photo IC

diode

Analog

current output

3.2 x 2.7 x 1.1t

COB-0.5 to +12 V 300 to 820 0.26 mA 6

S10604Photo IC

diode

Analog

current output

2.0 x 1.25 x 0.8t

COB -0.5 to +12 V 300 to 820 0.3 mA 6

S10925Photo IC

diode

Analog

current output2.0 x 1.25 x 0.8t

COB

-0.5 to +12 V 300 to 820 0.0036 mA 0.06

S11154-01CTPhoto IC

diode

Analog

current output-0.5 to +12 V 480 to 640 0.1 mA 6

S9705

Light-to-

frequency

converter photo IC

Frequency output

(for direct

interface to

microcomputer)

3.0 x 4.0 x 1.3t

4-pin plastic[2.7 to +5.5 V] 380 to 640 50 kHz -

S11252-01WTPhoto IC

diode

Illuminance sensor

for I2C Interface

1.18 x 1.18 x 0.58t

WL-CSP[2.25 to +3.63 V] 490 to 650

3.1 counts/ lx

(Low gain)

28.8 counts / lx

(High gain)

-

*S9705: frequency output, S11252-01WT: Digital output.

NEW

NEW

NEW


News 2009 Vol. 118

Connection example of I2C interface

SCL

SCL:Serial clock

Address 3 Address 2 Address 1

SDA:Serial data

SDA

Microcomputer

EEP ROM LCD driverAmbient lightphotosensor/colour sensor

These sensors support I2C Fast mode (400 kHz) and operate on 2.25 to 3.6 V.

I2C interface-compatible photo IC using a small, highly reliable WL-CSP

Hamamatsu offers a new illuminance sensor and colour sensor that uses a WL-

CSP (wafer level-chip size package) to achieve small size and high reliability.

To ensure low power consumption, these sensors include an auto-sleep

function that automatically switches to standby mode after detection. This

makes them ideal for adjusting the image quality on liquid crystal monitors of

mobile devices and fl at-panel TVs.

Features

Supports I2C interface to allow direct connection to microcomputers.

These sensors support the I2C interface and can exchange data with a

microcomputer using two signal lines jointly usable with other devices. Their

digital output makes them easy to install into electronic devices such as cell

phones and fl at-panel TVs whose microcomputer is compatible with the I2C

interface.

WL-CSP makes devices even smaller and highly reliable.

The CSP (chip size package) measures only 1.18 × 1.68 ×

0.58 mm (S11058-78HT) and 1.18 x 1.18 x 0.58 mm

(S11252-01WT) and lead-free refl ow solder (260 deg.C.)

can be used.

S11059-78HT

Illuminance sensor/Colour sensor S11252-01WT/S11059-78HT

NEW


News 2009 Vol. 1 19


Illuminance sensor S11252-01WT Colour sensor S11059-78HT

(4 ×) 0.3 ± 0.05

0.7

3 M

ax.

0.0

8

1.18

0.5

8 ±

0.0

4

1.1

8

0.5

0.28 × 0.28

0.5

Vdd

GND

SCL

SDA

(0.008)

Index mark

Photosensitive

surface

Solder bump

Active area

Index mark

Front Back

Tolerance unless otherwise noted: ±0.05

Photosensitive

surface

0.4

5

0.0

08

Photosensitivesurface

Photosensitivesurface

Active area:0.11×0.14 mm/4×10 ch

Infared

Solder bump


Front

Activearea

0.5

(0.4

5)

0.7

3 M

ax.

0.0

80.5

8±

0.0

4

0.5 0.5

Indexmark

Indexmark

Back

[Enlarged active area]

Vdd

NC

GND

SCL

NC

SDA

1.68

1.1

8

(6×) f0.3

R

GB

KPICA0081EAN

Enlarged image

WL-CSP

KPICC0155EAN

Wire

Visiblecompensationfilter

Through-holeelectrode

Si chip

Si chip

Resist

Board

Solderbump

Solderbump

Glass

Resin

Conventionaltype

NEW

Cross section

S11059-78HT


News 2009 Vol. 120

Block diagram

SDA

ADC

Light

SDA: serial data

SCL: serial clock

16

VDD

GND

SCLCurrent-frequencyconverter C

ount

er

Timer circuit

Regis

ter

I2C

inte

rface

Visible-cut filter

Photodiode

Spectral response

KPICB0131EA

NEW


3000

20

40

60

80

100

400 500 600 700 800 900 1000

S10949-78HT

(Typ.Ta=25 deg.C.)

Rela

tive s

en

siti

vit

y (

%)

Wavelength (nm)

Timing chart of sleep function

Formatting,measurement start

KPICC0157EA

Cu

rre

nt

con

sum

pti

on

Operatingmode

Integration time

Sleepingmode

I2Ccommand

Time

Idd

Idds

Readout

Illuminance sensor S11252-01WTA sensor for image adjustment which contributes tosaving energy

Features

Support I2C interface (Fast mode)

Converts illuminance into 16-bit digital data

Spectral response characteristics close to human eye sensitivity

Wide dynamic range

Allows microcomputer control for high/low gain selection,

gain adjustment (integration time setting), and sleep/continuous

measurement function selection

Low current consumption (100 µA Typ.)

Applications

LCD backlight adjustment for cell phones, notebook PC, etc.

Energy-saving sensor for large-size TV, etc.

Various types of light detection

Illuminance sensor/Colour sensor S11252-01WT/S11059-78HT

NEW


News 2009 Vol. 1 21

Block diagram

Visiblecompensationfilter Current-

frequencyconverter

B R G IR

VDD

SDA

SCL

GND

16

ADC

Timer circuit

Re

gis

ter

Co

un

ter

I2C

in

terf

ace

KPICC0152EAN

Spectral response

KPICB0132EBN

IR

(Typ.Ta=25 deg.C.)

Red

Blue

0

300 400 500 600 700 800 900 1000

0.1

0.2

0.3

0.4

Green

Rela

tive s

en

siti

vit

y (

A/W

)

Wavelength (nm)

Timing chart of sleep function

KPICC0158EAN

Sleeping mode

Integration time

Cu

rre

nt

con

sum

pti

on

Operatingmode

Time

Readout

I2Ccommand

Idds

Idd

R B IRG

Formatting,measurement start

Colour sensor S11059-78HT

Features

Converts red, green and blue light levels into 16-bit digital data

Visible and infrared light detection ideal for ambient light measurement

Wide dynamic range

Allows microcomputer control for high/low gain selection,

gain adjustment (integration time setting), and sleep/continuous

measurement function selection

Low current consumption (75 µA Typ.)

Applications

Brightness adjustment of RGB-LED backlight LCD for cell phones,

notebook PC, etc.

Image quality correction for large-size TV, etc.

Various types of colour detection


News 2009 Vol. 122

Output current

Previous type (SI0604)

0.3 mA 0.0036 mA

Output current Output current

(SI0925)NEW

Spectral response

S10925


20

40

60

80

100

0

Re

lati

ve

se

nsi

tivit

y (

%)

(Typ. Ta=25 deg.C., VR=5 V)

Wavelength (nm)

KPICB0128EAN

200 1000800600400 1200

Electrical and optical characteristics (Typ. Ta=25 deg.C.)



Peak sensitivity wavelength p - 560 - nm

Dark current ID VR=5 V - 50 500 pA

Photocurrent IL VR=5 V, 2856 K

100 lx2.5 3.6 4.7 µA

Rise time tr 10 to 90 %,VR=7.5 V

RL=10 k! , =560 nm

- 65 - µs

Fall time tf - 25 - µs

1 mm

Photo IC diodeS10925

Photo IC diode with low output current

S10925

Output current reduced by 2 orders of magnitude (compared to our

previous product)

The S10925 is a photo IC diode with output current reduced by 2 orders of

magnitude compared to our previous photo IC diode S10604.

NEW


News 2009 Vol. 1 23

Dimensional outline (unit: mm)

Focal

Plane

(2×)f3H7 depth3

(4×)M3 depth3

M6 depth5

KACCA0238EAN

(2×)1/4-20UNC depth5

80

65

55

50

35 1010

71.5

0.95

High-speed near-infrared image sensor ideal for a wide range of applications

The C10854 is a multichannel detector head containing an InGaAs linear

image sensor optimised for applications requiring high speed such as in SD-

OCT (spectral domain-optical coherence tomography)* and sorting machines.

*SD-OCT stands for spectral domain-optical coherence tomography. SD-OCT acquires information resolved in depth along the back

of the eye as a 3-dimensional image by using a spectrophotometer to analyze the intensity distribution of light refl ected from the

retina and the reference light.

Applications

SD-OCT (spectral domain-optical coherence tomography) Sorting machine Near-infrared spectroscopy

NEW

Specifi cations

Parameter Specifi cation

Built-in image sensor InGaAs linear image sensor G10768-1024D

Number of pixels 1024 pixels (256 pixels x 8 ports)

Pixel size 25 (H) x 100 (V) µm

Video output 16-bit, CameraLink (Base confi guration)

Interface RS-232C

Operation modeFree-running of internal synchronization,

external synchronization

Integration time Control in software, external trigger

Gain and offset Control in software

External output pulse Control in software

Weight 330 g

Note: InGaAs linear image sensor G10768-1024D is sold separately.

Specifi cations (Typ. Ta=25 deg.C.)

Parameter G10768-1024D Unit

Peak sensitivity wavelength 1.55 µm

Saturation charge 0.25 pC

Dark current 0.5 pA

RMS noise voltage (readout noise) 2 mV rms

Saturation voltage amplitude 2.5 V

Photo response non-uniformity 5 %

1024 pixels, high-speed InGaAs linear image sensor

G10768-1024D has 1024 pixels, yet offers high-speed line rate of 41000

lines/s Max.

Features

High-speed (5 MHz) operation

CameraLink

InGaAs multichannel detector head C10854


Dimensional outline (unit: mm) Spectral response (measurement example)

(Ta=25 deg.C.)

Ph

oto

sen

siti

vit

y (

A/W

)

0

0 . 1

0 . 2

0 . 3

Blue

Green

Red

Wavelength (nm)

300 400 500 600 700 800 900 1000 1100

KSPDB0295EAN

B

G

R

1.0

1.0

［Active area］

1.50.62

0.6

0.6

0.4

0.62

0.3

1.0

G

BR

3.0

1.6

KSPDA0174EBN

Index mark


Photosensitive

surface

Electrode

News 2009 Vol. 124

Colour sensorS10917-35GT

Compact colour sensor with superior cost performance

The S10917-35GT is a compact colour sensor with a 3-channel photodiode

mounted in one package, and sensitive to red, green and blue light. An

infrared-cut fi lter is formed on the active area. This colour sensor is ideal for

monitoring the brightness of RGB-LED backlight LCD in hand-held devices.

Electrical and optical characteristics (Typ. Ta=25 deg.C., per element)


Spectral response range

Blue 390 to 530

nmGreen 470 to 600

Red 590 to 680

Peak sensitivity wavelength p

Blue - 460 -

nmGreen - 540 -

Red - 620 -

Photo sensitivity S

Blue ( = p) 0.15 0.2 0.25

A/WGreen ( = p) 0.18 0.23 0.28

Red ( = p) 0.12 0.17 0.22

Dark current ID VR=1 V, All element - 1 50 pA

Temperature coeffi cients of ID TCID - 1.12 - time/deg.C.

Rise time tr VR=0 V, RL=1 k! , 10 to 90 % - 0.1 0.5 µs

Terminal capacitance Ct VR=0 V, f=10 kHz 5 12 25 pF

Absolute maximum ratings

Parameter Symbol Value Unit

Reverse voltage VR Max. 10 V

Operating temperature Topr -25 to +85 deg.C.

Storage temperature Tstg -40 to +85 deg.C.

NEW


News 2009 Vol. 1 25

Line-up of RGB colour sensors

Type No. TypeActive area size

(mm)Package

Peak sensitivity

wavelength

(nm)

Photo sensitivity # p

(nm)Photo

S9032-02 Photodiode "2.04 x 4.8 x 1.8t

6-pin (fi lter 0.75t)

R 620 R 0.16 (A/W) [ =620 nm]

G 540 G 0.23 (A/W) [ =540 nm]

B 460 B 0.18 (A/W) [ =460 nm]

S9702 Photodiode 1.0 x 1.0 3 x 4 x 1.3t


R 620 R 0.16 (A/W) [ =620 nm]

G 540 G 0.23 (A/W) [ =540 nm]

B 460 B 0.18 (A/W) [ =460 nm]

S10917-35GT Photodiode 1.0 x 1.03 x 1.6 x 1.0t

COB (On-chip fi lter)

R 620 R 0.17 (A/W) [ =620 nm]

G 540 G 0.23 (A/W) [ =540 nm]

B 460 B 0.2 (A/W) [ =460 nm]

S9706 Digital photo IC 1.2 x 1.24 x 4.8 x 1.8t


R 615 R 0.64 (LSB/lx) R 5.8 (LSB/lx)

G 540 G 0.45 (LSB/lx) G 4.1 (LSB/lx)

B 465 B 0.21 (LSB/lx) B 1.9 (LSB/lx)

S11059-78HT

I2C interface

compatible

photo IC

1.1 x 0.521.18 x 1.68 x 0.58t

WL-CSP (On-chip fi lter)

R 615 R 10.6 (counts/lx) R 108.3 (counts/lx)

G 530 G 8.3 (counts/lx) G 86.5 (counts/lx)

B 460 B 4.0 (counts/lx) B 40.6 (counts/lx)

IR 855 IR 3.7 (counts/lx) IR 25.8 (counts/lx)

NEW

NEWLo

wLo

w

Hig

hH

igh


News 2009 Vol. 126

Digital compensation type APD moduleC10508

NEW

Frequency response

Block diagram

Line-up of APD modules

Temperaturemonitor

Voltagecontroller

High voltagegenerator

Microcomputer

Current-to-voltageconverter circuit

Powersupply

Signaloutput

（Ta=25 deg.C., M=250）108

107

106

105

104

Ph

oto

sen

siti

vit

y （

V/W）

Frequency (Hz)

（M=250）

X-axis：500 mV/div., Y-axis: 200 ns/div.

Digital temperature-compensation, high-stability APD module

The C10508 is an APD module with temperature compensation that can be

accurately controlled by microcomputer to maintain the multiplication factor

(gain). It operates from a ±5 V power supply and the gain can be easily

adjusted when needed.

Features

Gain fl uctuation with temperature: ±5% Max.

Ambient temperature: 0 to + 40 deg.C., M=250)

Gain setting:

10 to 250 times (7 steps) by rotary switch

5 to 400 times (any setting) by PC command

Frequency bandwidth: DC to 10 MHz

Applications APD evaluation Power meter Low-light-level detection

Specifi cations (Typ. Ta=25 deg.C., =800 nm, unless otherwise noted) Photoelectric section (Si APD)

Parameter Symbol Condition Value Unit

Active area A "1.0 mm


Peak sensitivity wavelength p 800 nm

Photo sensitivity S M=1 0.5 A/W

Gain M Adjustable by switch or serial communication -

Temperature stability of gain 0 deg.C. to 40 deg.C., M=250 ±5.0 Max. %


News 2009 Vol. 1 27

APD module (C10508)


News 2009 Vol. 128

High-performance image sensors (S10747-0909)


Spectral response

(Typ. Ta=25 deg.C.)

0

100

90

80

70

60

50

40

30

20

10

200 400 600 800 1000 1200

Wavelength (nm)

Qu

an

tum

eff

icie

ncy

(%

)

S10747-0909

Standard typeback-thinned CCD

Enhanced near-infrared sensitivity, made possible by using fully-depleted CCD technology

The S10747-0909 is a back-thinned CCD area image sensor that delivers

drastically improved near-infrared sensitivity by the widened depletion layer.

Features

Quantum effi ciency: 70% ( =1000 nm, Ta=25 deg. C.)

Pixel size: 24 x 24 µm

512 x 512 pixels


Parameter S10747-0909 Unit

Pixel size 24 x 24 µm

Number of pixels 512 x 512 pixels

Thickness of depletion layer 200 µm

Quantum

effi ciency

=400 nm 40

% =650 nm 90

=1000 nm 70

Charge-to-voltage conversion factor 1.6 µV/e-

Full well capacity 200 ke-

Readout noise 30 e- rms

Dark current (-70 deg.C.) 1 e-/pixel/s

Depletionlayer

BIAS

Blue light Infrared light

CCD surface

Light incidentsurface

GND

Depletionlayer


CCD surface


Depletionlayer

GND


Chargediffusion

Neutralregion

CCD surface


FIGURE 1. Ordinary back-thinned CCD. FIGURE 2. When no bias voltage is applied to thick silicon.

FIGURE 3. When a bias voltage is applied to thick silicon.

Structure of fully depleted back-thinned CCD

In ordinary back-thinned CCDs the silicon substrate is only a few dozen

microns thick. This means that infrared light is more likely to pass through the

substrate (see Figure 1), thus resulting in a loss of quantum effi ciency. Thicken-

ing the silicon substrate increases the quantum effi ciency in the near-infrared

region but also makes the resolution worse since the generated charges diffuse

into the neutral region unless a bias voltage is applied (see Figure 2). Fully

depleted CCDs use a thick silicon substrate that has no neutral

region when a bias voltage is applied and therefore deliver

high quantum effi ciency in the infrared region while maintain-

ing a good resolution (see Figure 3). One drawback, however,

is that the dark current becomes large so that these devices

must usually be cooled to about -70 deg.C. during use.

Fully depleted type

News 2009 Vol. 1 29

High-performance CCD image sensors for measurement instruments S10747-0909NEW


News 2009 Vol. 130

Mini-spectrometer TG seriesC11118GA

NEW

Long-wavelength near-infrared mini-spectrometer

The C11118GA mini-spectrometer is sensitive to longer wavelengths (up to

2.55 µm) compared to our former model, the C9914GB (sensitive up to

2.2 µm).

Features

Spectral response range: 0.9 to 2.55 µm

Using a Hamamatsu G9208-256W InGaAs linear image

sensor extends the spectral response range up to 2.55 µm.

Compatible with USB 2.0 interface

Compatible with external trigger

Allows external trigger mode by changing the operation mode.

Applications

Measurement of C-H group absorption (2.3 µm band)

Soil analysis and component analysis

Spectral response of image sensor (G9208-256W)

T= 25 deg.C.

T=-20 deg.C.

Wavelength (µm)

(Typ.)

00.5 1.0 1.5 2.0 3.02.5

1.5

0.5

1.0

KMIRB0047EAN

Ph

oto

sen

siti

vit

y (

A/W

)

Electrical characteristics

Parameter Specifi cation Unit

A/D conversion 16 bit

Integration time 6 to 10000 (Typ.) µm

Interface USB2.0 -

USB bus power current consumption 250 mA

Power supply for cooling element 5/2.8 V/A

Power supply for cooling fan 12/0.2 V/A

Optical characteristics


Spectral response range 0.9 to 2.55 µm

Spectral resolution 20 nm

Wavelength reproducibility ±0.8 nm

Wavelength temperature dependence 0.08 nm/deg.C.

Spectral stray light -30 dB

Broadband stray light -25 dB

General ratings/Absolute maximum ratings

Parameter Value Unit

Dimensions 142 (W) x 218 (D) x 80 (H) mm

Image sensorInGaAs linear image sensor

(G9208-256W)-

Number of pixels 256 pixels

Slit 140 (H) x 250 (V) µm

Optical NA 0.22 -

Optical fi bre connector SMA905D -

Operating temperature +5 to +30 deg.C.

Storage temperature -20 to +70 deg.C.


News 2009 Vol. 1 31

Hamamatsu has developed and produced various types of mini-spectrometers

designed for spectral detection in the ultraviolet to near-infrared region. These

include compact and low-cost models, high-sensitivity models (containing a

back-thinned CCD image sensor), and cooled models with low noise. To further

extend our product line, we have a newly added thumb-sized ultra-compact

type (C10988MA) and an infrared-enhanced type with sensitivity up to 2550

nm (C11118GA).

Wider spectral response range

mn 0002mn 0001mn 002

2200 nm

2550 nm

Conventional line-up

New line-up

Spectral response range

More compact than ever before

For laboratory and research use For assembly into other

equipment

For mobile devices

C10988MA

NEW

Long-wavelength type

C11118GA

NEW


News 2009 Vol. 132

Type No. TypeSpectral response range (mm) Spectral resolution

Max. (nm)Image sensor

200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600

C10082CATM-UV/VIS-CCD

High sensitivity6

Back-thinned type CCD

image sensorC10082CAH

TM-UV/VIS-CCD

High resolution1 (Typ.)

C10082MDTM-UV/VIS-MOS

Wide dynamic range6 CMOS linear image sensor

C10083CATM-VIS/NIR-CCD

High sensitivity8 (320 to 900 nm)



TM-VIS/NIR-CCD

High resolution1 (Typ.) (320 to 900 nm)

C10083MDTM-VIS/NIR-MOS


C9404CATG-UV-CCD

High sensitivity3



TG-UV-CCD

High resolution1 (Typ.)

C9404MCTG-UV-MOS


C9405CATG-SWNIR-CCD

High sensitivity5 (550 to 900 nm)


image sensor

C9405MCTG-SWNIR-MOS

Wide dynamic range5 (550 to 1100 nm) NMOS linear image sensor

C9406GCTG-NIR

Non-cooled type7

InGaAs linear

image sensor

C9913GCTG-cooled NIR-1

Low noise (cooled type)7

C9914GBTG-cooled NIR-2


C11118GATG-cooled NIR-3


C11007MARC-VIS-MOS

Spectrometer module9

CMOS linear

image sensorC11008MA

RC-SWNIR-MOS

Spectrometer module8

NEW

TM s

erie

sTG

ser

ies

TG s

erie

sR

C s

erie

s

OEM model



200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600

C11009MARC-VIS-MOS

Spectrometer head9

CMOS linear

image sensorC11010MA

RC-SWNIR-MOS

Spectrometer head8R

C s

erie

s 340 to 780

640 to 1050

OEM model (ultra-compact type)



200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600

C10988MA ultra-compact type 14 CMOS linear image sensor340 to 750

200 to 800

320 to 1000

200 to 400

500 to 1100

900 to 1700

1100 to 2200

900 to 2550

340 to 780

640 to 1050

NEW

Mini-spectrometer line-up


News 2009 Vol. 1 33


NEW

SEM image of grating

Image sensor Input light

Through-hole slit

Bump electrode

Glass wiring board

Grating made by nano-imprint

Lens

Diffractedlight

Multiple MEMS technologies are applied to downsize the C10988MA mini-spectrometer.

Thumb-sized "ultra-compact spectrometer" made a reality by advanced MOEMS technology!

The C10988MA is a thumb-sized (27.6 × 13 × 16.8 mm) spectrometer head

developed by merging our MEMS (Micro-Electro-Mechanical Systems) and

image sensor technologies.

Besides a CMOS image sensor chip integrated with an optical slit by etching,

the C10988MA employs a grating that is formed on a convex lens by nano-

imprint. Since our sensors and optical systems are manufactured in-house, they

offer a high degree of design freedom to meet various market needs.

MOEMS (Micro-Opto-Electro-Mechanical-Systems)

MEMS is attracting a lot of attention recently as a technology for innovating

semiconductor devices. We are integrating this MEMS technology with

optical technology to develop radically new MOEMS technology to create

sophisticated and versatile products that are smaller and cheaper than ever

before.

This spectrometer is available for OEM customers only.

MEMS technology

Etching

Nano-imprint

Bonding

Optical technology

Optics technology

Image sensors

IC technology

10 mm

Image sensors used in various types of mini-spectrometers


News 2009 Vol. 134

Grating pattern

Master board

Condenser

Replica resin

Master board

Nano-imprint technology

Simplifying the optical system

Nano-imprint technology is used to produce replica gratings, which

transfers the grating pattern onto a glass body. Replica resin is coated

on the top of a convex lens, and the grating is replicated on the lens

by pressing the grating pattern against the resin while simultaneously

irradiating it with ultraviolet light.

Application example -2 (MOEMS technologies)

Etching technology

Integrating a slit with an image sensor

Deep etching is used to form a 75 × 750 µm slit on CMOS image

sensor chips made in-house at Hamamatsu. These devices deliver

high positioning accuracy because the slit is formed using the same

photomask as the image sensors.

Application example -1 (MOEMS technologies)

CMOS chip

Slit

Alkaline etching

Deep etching

CMOS chip (back) Cross section of through-hole slit Replica grating SEM image of grating

Features

Thumb size: 27.6 × 13 × 16.8 mm

Weight: 9 g

Spectral response range: 340 to 750 nm

Spectral resolution: 14 nm

Designed to be built into equipment

Applications

Mobile measurement equipment

Colour monitor of printer, large size display

Optical characteristics



Spectral resolution

(spectral response half width)14 nm

Wavelength reproducibility ±0.5 nm

Spectral stray light -25 dB

Electrical characteristics


Driving voltage 5 V

Power consumption 30 (Typ.) mW

Video rate 200 kHz

General ratings/Absolute maximum ratings


Image sensorNumber of pixels 256 pixel

Pixel size 12.5 (H) x 1000 (V) µm

Slit 75 (H) x 750 (V) µm

Optical NA 0.22 -

Operating temperature +5 to +40 deg.C.

Storage temperature -20 to +70 deg.C.

27,6 mm

16,8 mm

13 m

m


NEW


News 2009 Vol. 1 35

Spectral resolution vs. wavelength

0

300 350 400 450 500 550 600 650 700 750

5000

10000

15000

20000

25000

30000

35000

40000

45000

KACCB0201EAN

(Ta=25 deg.C.)

A/D

co

un

t

Wavelength (nm)

Measurement example using a white LED

7

300 350 400 450 500 550 600 650 700 750

8

9

10

11

12(Ta=25 deg.C.)

KACCB0199EAN

Sp

ect

ral re

solu

tio

n (

nm

)

Wavelength (nm)

Dimensional outline (unit: mm)

2.6

16.8

Slit position

2.5

4

Slit

0.075 × 0.75

Window 3

0.2

1.0

29.6

0.5

1

1.5

1.0

5.0

CLK

GND

NC

ST

NC

Gain

EOS

NC

Vdd

Video

0.75

16

27.6

13

13


News 2009 Vol. 136

Spectral response

2 43 5 610 9

10 11

10 10

Wavelength (µm)

D*(

cm･H

z1/2 /

W)

CO2, SOx

KIRDB0430EAN

C-H type CO NOx

Parameter P11120-901 Unit

Active area 1.0 mm

Peak sensitivity wavelength 4.8 µm

Cut-off wavelength 5.8 µm

Detectivity 8.5×1010 cm.Hz1/2/W

Element temperature -196 deg.C.

Specifi cations

Fast response, high sensitivity and high reliabilityinfrared detector in the 5 µm spectral band

The P11120-901 is an infrared detector that provides high sensitivity in the

5 µm spectral band due to our unique crystal growth technology. The InAsSb

photodiode used in this detector has a planar structure that ensures fast

response and high reliability. It is ideal for gas analysis applications including

CO2, SOx, CO and NOx analysis. On request, Hamamatsu also manufactures

detector elements with peak sensitivity at longer wavelengths by changing the

composition ratio of As and Sb.

Applications

Gas analysis

Thermometers (radiometers)

Thermal imaging

Remote sensing

FTIR

Spectrophotometry

Features

High-speed response

High sensitivity

High reliability

InAsSb photodiodeP11120-901

NEW


News 2009 Vol. 1 37

Back-thinned CCDS11071/S10420-01 series

Etaloning characteristics

NEW

Conventional type

Wavelength (nm)KMPDB0284EAN

Re

lati

ve s

en

siti

vity

(%

) S11071/S10420-01

(Ta=25 deg.C.)

65

70

75

80

85

90

95

100

880 900 920 940 960 980 1000

Specifi cations (typical example) (Typ. Ta=25 deg.C.)

Parameter S11071 series S10420-01 series Unit

Pixel size 14 (H) x 14 (V) µm


CCD node sensitivity 5.5 6.5 µV/e-

Full well capacity (Horizontal) 200 300 ke-

Readout noise 22*1 6*2 e-rms

Dark current (MPP mode) 50 e-/pixels/s

Dynamic range 9090 50000 -

Anti-blooming With anti-blooming (> FW x 1000) -

Readout speed (Max.) 10 0.5 MHz

*1: Readout speed 2 MHz

*2: Readout speed 20 kHz

Improved etalon characteristics, high-speed type and low-noise types are available

These are back-thinned CCDs designed for spectrophotometers. Two types are

available, high speed and low noise, both with improved etalon characteristics.

Features

High-speed type: S11071 series

Low-noise type: S10420-01 series

Number of pixels

1024 × 16 pixels (S11071-1004, S10420-1004-01)

1024 × 64 pixels (S11071-1006, S10420-1006-01)

2048 × 16 pixels (S11071-1104, S10420-1104-01)

2048 × 64 pixels (S11071-1106, S10420-1106-01)

NEW


News 2009 Vol. 138

InGaAs PIN photodiodeG10899 series, P3207-07, S10783, S10784, S11049-02SB

Spectral response

Wavelength (µm)KIRDB0408EAN

NEW

Si photodiode S1337-BR

InGaAs PIN photodiode(standard type)

G10899 series

(Typ. Ta=25 deg.C.)

Ph

oto

sen

siti

vit

y (

A/W

)

1.2

0

0.2

0.4

0.6

0.8

1.0

0.19 1.21.00.80.60.4 1.81.61.4

Spectral response

Wavelength (µm)

D* (λ, 600, 1)

(cm･H

z1/2/W

)

KIRDB0391EAN

(Typ.)

1 765432107

108

109

1010

PbSe photoconductive detectors P3207-07 Peak sensitivity wavelength 4.3 µm, room temperature operation.

The P3207-07 is a PbSe photoconductive detector that offers fast response

and allows room temperature operation. It is suited for applications such as

detection of CO2 gas concentration. Its D* is improved 2.5 times compared to

our previous product (P3207-05).

InGaAs PIN photodiode G10899 series Wide spectral response range (0.5 to 1.7 µm)

The G10899 series is an InGaAs PIN photodiode designed to cover a wide

spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN

photodiodes have a spectral response range from 0.9 µm to 1.7 µm, the

G10899 series has sensitivity extending to 0.5 µm on the shorter wavelength

side. A wide range of spectrum can be detected with a single detector.

NEW


News 2009 Vol. 1 39

Si PIN photodiode S10783, S10784High-speed APC (auto power control) detectors

The S10783 and S10784 are high-speed APC detectors developed for

monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The

S10783 is designed for surface mount and the S10784 has a plastic package

with 3 mm lens.


Parameter S10783 S10784 Unit

Active area size 0.8 3.0 mm

Peak sensitivity 760 nm

Photo sensitivity !=660 nm 0.46 0.45

A/W!=780 nm 0.52 0.51

Cut-off

frequency*

!=660 nm 300MHz

!=780 nm 250

*VR=2.5 V, RL=50 "

Photo IC for optical switch S11049-02SBHigh-speed APC (auto power control) detectors

The S11049-02SB is a photo IC made up of a photodiode with spectral

response from 380 nm to 1120 nm (peak sensitivity wavelength: 760 nm), a

preamp, and a buffer. The allowable ambient illuminance is 4000 lx (Min.).


Parameter S11049-02SB Unit

Supply voltage 5 V

Photo sensitivity (!=950 nm) 200 V/mW

Output linearity ±10 %

Cut-off frequency 1.45 MHz

Allowable background light level Min. 4000 lx

Output noise Max. 1.8 V rms


News 2009 Vol. 140

Radiant fl ux vs. forward current

KLEDB0312EAN

NEW

(Typ. Ta=25 deg.C.)

Forward current (mA)

0

Rad

ian

t fl

ux (

mW

)

70605040302010 80

4.0

3.0

2.0

1.0

0

L10660

L7850(conventional type)

Infrared LED L10660 1450 nm band / High-power LED

The L10660 is a high-power infrared LED that emits light at a peak wavelength

of 1450 nm. It delivers optical power 2.6 times higher than the conventional

type (L7850) and is ideal for use in combination with InGaAs PIN photodiodes.

Infrared LED L10596 Small emission spot LED using current confi ned chip

The L10596 is an infrared LED with a microball lens bonded to the current

confi ned chip surface. This combination ensures a uniform light-emitting area

and narrow directivity. By forming a light-refl ecting layer between the light-

emitting area and the GaAs substrate, the L10596 delivers a radiant output

power 1.5 times higher than our previous model (L2791).

Parameter Typ Unit

Peak emission wavelength 870 nm

Spectral half width 35 nm

Forward voltage 1.6 V

Pulse forward voltage* 3.3 V

Radiant fl ux 3.0 mW

Cut-off frequency 15 MHz

*IF = 0.45 A

Infrared LEDL10596, L10660, L10762

NEW

NEW

Electrical and optical characteristics (Typ. Ta=25 deg.C., VF=50 mA)

NEW


News 2009 Vol. 1 41

Infrared LED L10762RC type LED for POF data communication

The L10762 is a red LED optimized for POF data communication. A microball

lens is bonded to the surface of the LED chip to enhance the coupling effi ciency

to an optical fi bre. This increases the output at the fi bre tip to deliver an output

about 7 times higher than the conventional type (L9907).

Microball lens

NEW


News 2009 Vol. 142

25 Mbps FOT for MOST Low voltage (3.3 V) operation

Features

Transmitter photo IC: employs RC-LED

Receiver photo IC:

Low current: 24 mA Max. (operating mode)

15 µA Max. (sleeping mode)

Wide operating temperature range:

-40 to +105 deg.C.

Transmitter/Receiver photo IC for optical link L10663-01, S10664-01

NEW

Parameter Symbol Min. Typ. Max. Unit

Current consumption Icc - - 40 mA

Peak emission wavelength !p 630 650 670 nm

Spectral half width (FWHM) #! - 20 30 nm

Fibre coupled optical output1*1 Po1 -9.5 - -2 dBm

Fibre coupled optical output2*2 Po2 -13 - -4.5 dBm

Extinction ratio re 10 - - dB

Rise time at pulse drive tr - - 5.5 ns

Fall time at pulse drive tf - - 5.5 ns

Pulse width variation tpwv 19.99 - 24.29 ns

Pulse width distortion

(average value)tapwd -1.39 - +1.39 ns

*1: Rcont=13.5 k"*2: Rcont=27 k"


Current consumption (operation mode) Icco - - 24 mA

Current consumption (sleeping mode) Icco - - 15 µA

Receiver level Popt3 -25 - -2 dBm

Vout

High level output voltage Voh 2.5 - Vcc +0.3 V

Low level output voltage Vol 0 - 0.4 V

Rise time tr - - 9 ns

Fall time tf - - 7 ns

Pulse width variation tpwv 17.09 - 29.79 ns

Pulse width distortion (average value) tapwd -2.69 - +6.49 ns

Operation to sleeping mode transition receivable level Ps -39 - -25.5 dBm

Sleeping mode to operation transition receivable level Pop -39 - -25.5 dBm

Mode outputHigh level output voltage Vmh 2.5 - - V

Low level output voltage Vml - - 0.5 V

Electrical and optical characteristics (Receiver photo IC S10664-01) (Vcc=3.135 to 3.465 V, FS=44.1 kHz, Ta=-40 to +105 deg.C.)

Electrical and optical characteristics (Transmitter photo IC L10663-01) (Vcc=3.135 to 3.465 V, FS=44.1 kHz, Ta=-40 to +105 deg.C.)


News 2009 Vol. 1 43

For instrument illumination control

Light-to-frequency converter photo IC

Photo IC diode (Illuminance sensor)

For ambient light level detection, daylight detection (automatic headlight control)



For MOST network

Transmitter/receiver

photo IC

For jog dial

Photo IC, Infrared LED

Encoder module

For steering wheel angle sensing

Photo IC, Infrared LED

For laser radar

Si PIN photodiode, Si APD

For sun load sensing (automatic climate control)

Si photodiode, Sunsensor

Light dimmers for LCD



For rain sensor

Si photodiode, Infrared LED

For ambient light level detection, (automatic anit-glare mirror)



Hamamatsu opto-semiconductor devices for automotive applications

To contribute to greater safety and convenience for vehicle drivers, Hamamatsu

Photonics has developed and produced opto-semiconductors using our

advanced semiconductor process and packaging technologies.


News 2009 Vol. 144

Selection guide

Type No. ScintillatorScintillator specifi cations

Application exampleAfterglow Cross-talk

S5668-021 None (epoxy resin potting) - - General photometry

S5668-121 CsI (TI) Large LowX-ray non-destructive inspection of slow-moving objects (baggage inspection, etc.)

X-ray applications where signal can be integrated

S5668-321 Ceramic Small Low X-ray non-destructive inspection of fast-moving objects (baggage inspection, etc.)

S5668-421 Phosphor sheet Small May occur. X-ray non-destructive inspection (at low X-ray intensity)

Absolute maximum ratings (Typ. Ta=25 deg.C., per element)

Parameter Symbol S5668-021 S5668-121/-321/-421 Unit

Reverse voltage VR Max. 10 10 V

Operating temperature Topr -20 to +60 -10 to +60 deg.C.

Storage temperature Tstg -20 to + 80 -20 to +70 deg.C.

Long and narrow format using multiple arrays

The S5668 series is a 16-element Si photodiode linear array. Each element has

an active area of 1.175 mm (width) × 2.0 mm (height) and is arrayed at an

element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm

(1 inch) long PC board. By linearly arranging two or more pieces of the S5668

series, a long and narrow photodiode array can be easily confi gured at the

same element pitch. For X-ray detection applications, the S5668-121 with a

CsI (Tl) scintillator, the S5668-321 with a ceramic scintillator and the S5668-

421 with a fl uorescent paper are also available.

Features

Active area: 1.175 × 2.0 mm/one element

Element pitch: 1.575 mm

Mounted on a 1-inch (25.4 mm) long PC board

Long and narrow format using multiple arrays

Applications

Non-destructive inspection, etc.

S5668-021

S5668-421

S5668-321

S5668-121

S5668-021

16-element Si photodiode arrayS5668-021/-121/-321/-421


News 2009 Vol. 1 45

Electrical and optical characteristics (Ta=25 deg.C., per 1 element)


Spectral response range ! - 320 to 1100 - nm

Peak sensitivity wavelength !p - 960 - nm

Photo sensitivity S!=540 nm 0.27 0.31 0.35

A/W!=!p 0.54 0.60 0.66

Dark current ID VR=10 mV - 5 30 pA

Rise time trVR= 0 ,V RL=1 k"

10 to 90 %- 0.1 - µs

Terminal capacitance Ct VR=0 ,V f=10 kHz 20 30 40 pF

Noise equivalent power NEP VR=0 V, !=540 nm - 9.3 x 10-15 - W/Hz1/2

X-ray sensitivity iscX *

-021 - - -

nA-121 - 6.8 -

-321 - 2.8 -

-421 - 3.2 -

*These are for reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminium fi lter t=6 mm, distance 830 mm), X-ray sensitivity depends on the X-ray equipment operating and setup

conditions.

Emission spectrum of scintillator and spectral response

S5668-121

KMPDB0282EB

Rela

tive e

mis

sio

n in

ten

sity

(%

)

Qu

an

tum

eff

icie

ncy

(%

)

Wavelength (nm)

(Typ.)

002100010 8006004002000

40

20

60

80

100

0

40

20

60

80

100Spectralresponse

Emission spectrumof CsI (TI)scintillator

S5668-321

Typical scintillator characteristics

Parameter Condition CsI (TI) Ceramic scintillator Unit

Peak emission wavelength 560 520 mm

X-ray absorption coeffi cient 100 kev 10 7 -

Refractive index at peak emission wavelength 1.74 2.2 -

Decay constant 1 3 µs

Afterglow 100 ms after X-ray turn off 0.3 0.01 %

Density 4.51 7.34 g/cm3

Relative emission intensity CWO=1.0 1.8 1.2 -

Colour Colour Transparent Light yellow-green -

Sensitivity non-uniformity ±10 ±5 %

KMPDB0281EB

Rela

tive e

mis

sio

n in

ten

sity

(%

)

Qu

an

tum

eff

icie

ncy

(%

)

Wavelength (nm)

(Typ.)

002100010 8006004002000

40

20

60

80

100

0

40

20

60

80

100Spectralresponse

Emission spectrumof ceramic scintillator


News 2009 Vol. 146

Photodiode array combined with signal processing IC for X-ray detection

The S8866-64G-02/-128G-02 are photodiode arrays with an amplifi er and

a phosphor sheet attached to the active area for X-ray detection. The signal

processing circuit chip is formed by CMOS process and incorporates a timing

generator, shift register, charge amplifi er array, clamp circuit and hold circuit,

making the external circuit confi guration simple. A long, narrow image sensor

can be confi gured by arranging multiple arrays in a row.

A dedicated driver circuit, the C9118 series (sold separately) is available. (Not

compatible with the S8865-256G.)

Features

Large element pitch: 5 types available

S8865-64G: 0.8 mm pitch x 64 ch

S8865-128G: 0.4 mm pitch x 128 ch

S8865-256G: 0.2 mm pitch x 256 ch

S8866-64G-02: 1.6 mm pitch x 64 ch

S8866-128G-02: 0.8 mm pitch x 128 ch

5 V power supply operation

Simultaneous integration by using a charge amplifi er array

Sequential readout with a shift register

(Data rate: 500 kHz Max.)

Photodiode arrays with amplifi erS8866-64G-02/-128G-02

NEW

Low dark current due to zero-bias photodiode operation

Integrated clamp circuit allows low noise and

wide dynamic range

Integrated timing generator allows operation

at two different pulse timings

Detectable energy range: 30 k to 100 keV

Applications

Line sensors for X-ray detection

Specifi cations

Parameter Symbol S8865-64G S8865-128G S8865-256G S8866-64G-02 S8866-128G-02 Unit

Element pitch P 0.8 0.4 0.2 1.6 0.8 mm

Element diffusion width W 0.7 0.3 0.1 1.5 0.7 mm

Element height H 0.8 0.6 0.3 1.6 0.8 mm

Number of elements - 64 128 256 64 128 -

Active area length - 51.2 51.2 51.2 102.4 102.4 mm

Line rate - 7800 3900 1950 7800 3900 lines/s


News 2009 Vol. 1 47

Electrical characteristics [Typ. Ta=25 deg.C., Vdd=5 V, V (CLK)= V (RESET) = 5 V]

Parameter Symbol

S8865-64G

S8866-64G-02

S8865-128G

S8866-128G-02 Unit

Min. Typ. Max. Min. Typ. Max.

Clock pulse frequency*2 f (CLK) 40 - 2000 40 - 2000 kHz

Output impedance Zo - 3 - - 3 - k "

Power consumption P - 100 - - 180 - mW

Charge amp

feedback

capacitance

High gainCf

- 0.5 - - 0.5 -pF

Low gain - 1 - - 1 -

*2: No condensation

Photodiode arrays with amplifi er

Direction of scan

102.4 -0+0.3

P2.54 × 11 = 27.94

25.0

± 0

.1

A *

1

12

80.011.2

12.0

3.0

1

(4 ×) 2.2

(12 ×) 0.76

Photodiode 1 ch Active area

Signal processingIC chip

Fluorescentpaper *2

1.6

2.54

1.6

1.27

5.0

5.02.9

5

KMPDA0226EA

Type No.

S8866-64G-02

A

8.2

S8866-128G-02 8.0

*1: Distance from the bottom of the board to the center of active areaBoard: G10 glass epoxyConnector: PRECI-DIP DURTAL 800-10-012-20-001

*2: Photodiode array with phosphor sheet· Material: Gd2O2S:Tb· Phosphor thickness: 300 µm Typ.· Detectable energy range: 30 k to 100 keV

KMPDA0226EA

LASER PRODUCTS

News 2009 Vol. 148

Mid Infrared Quantum Cascade Laser (QCL) L10195-9673H

A new compact quantum cascade laser with built-in TE-cooler

Hamamatsu Photonics present a new quantum cascade laser; the L10195-

9673H. The L10195-9673H, CW (continuous-wave) operation, DFB (distributed

feedback) QCLs are packaged in an industrial, hermetically sealed housing;

HHL-package. A one stage TE-cooler and QCL chip are integrated in the HHL-

package. This confi guration provides precise and stable temperature control of

the QCL chip. The typical emission wavelength is 9.67 µm (1034 cm-1), which is

suitable for ammonia or ozone detection at levels of sensitivity to the order of

ppm to ppb.

Application of QCLs

Infrared tunable laser absorption spectroscopy is an extremely effective tool for

the detection of molecular trace gases. The QCL offers attractive new features

for infrared absorption spectroscopy: high sensitivity, high selectivity, non-

destructivity, compactness, portability and real-time monitoring.

Developing and producing the QCLs

The active region of the QCLs is designed by means of Band Structure

Engineering. Our unique SPC (single phonon resonance-continuum) structure

of the active region has advantages of high reliability, high reproducibility and

design fl exibility. Due to the SPC-structure, it has been possible to develop

CW QCLs covering a wide wavelength range of 4 to 10 microns. Hamamatsu

Photonics has capabilities of design, growth, processing, packaging and

testing of the QCLs.

Features

Emission wavelength: 9.67 µm (1034 cm-1)

CW operation at room temperature

Spectral single-mode: DFB-structure

Package: HHL-package

Include TE-cooler


Radiant output power e 10 15 - mW

Emission wavelength !p 9650 9670 9696 nm

Spectral resolution linewidth #! - - 0.2* cm-1

Forward voltage Vf - - 10.0 V

Lasing threshold current Ith - 0.8 0.9 A

Operating temperature Top (qcl) -5 - +30 deg.C.

TEC current Ic - - 3.7 A

TEC voltage Vc - - 12.9 V

*: Limited by resolution of spectrometer when tested.

Specifi cations


News 2009 Vol. 1 49

PhotoIon bar L9915

Remove electrostatic discharge over a wide area

Electrostatic charge removal with soft X-rays offers substantial advantages

over other methods:

Features

No air fl ow (good for powdered products)

No cleaning needed

Ozone free

High speed

Dust free

Until now, the ability to perform quick neutralization of electrostatic charges

over large volumes has been complicated and space-consuming.

The L9915 combines three PhotoIonizer heads in one housing to cover a wider

area with a single unit. Combined with a controller, the unit can very quickly

remove electrostatic charges over a width of more than 70 cm.

Applications include removing electrostatic charges in packaging of powdered

products, production of ICs, LCDs or plasma panels, high speed moving thin

materials like fi lms or printed matter.

Author: Henrik Sievers, Hamamatsu Photonics Norden

High-speed moving objects

Large size glasses

Specifi cations

Parameter Description/Value

Ionization Method Soft X-ray exposure

Ionization Source Soft X-ray tube

Soft X-ray TubeTube Voltage (DC) 9.5 kV

Beam Angle 120 degrees

Recommended Static Charge Removal Distance 15 cm to 100 cm

Input Voltage (AC) 100 V to 240 V (50 Hz / 60 Hz)

Power Consumption (AC) 33 W Max.

Ionization Source Guarantee Life 8000 hours

Control Cable Length 10 m

WeightBar (Main body) Approx. 1.7 kg

Controller Approx. 1.2 kg

Note: L9915 is the model number in a set of "Bar: L9916", "controller: C9918" and "control cable". When ordering a new head

for replacement, specify head model number is L9917.

Function Description/Value

Operating Ambient Temperature 0 deg.C. to +40 deg.C.

Storage Temperature -10 deg.C. to +60 deg.C.

Operating Ambient Humidity Less than 60 %

Storage Humidity Less than 80 %

Principle

Ions generated near the fi lm surface serve to effi ciently remove the electrostatic charges. Even though the fi lm moves at high speed, the electrostatic charges can be reliably neutralized. In addition, ions generated by soft X-rays penetrating through the fi lm, also neutralize the electrostatic charges in the reverse side of the fi lm, so that the electrostatic removal effect is greatly improved.

Ions are generated over the entire area exposed to X-rays so electro-static charges can be quickly removed even from large glass surface.


News 2009 Vol. 150

Lightningcure®

LC-L2

UV LED Module

The new Lightningcure® LC-L2 from Hamamatsu Photonics offers a totally

new and unique concept for UV LED light sources and is specially designed for

integration into automated manufacturing lines.

Emitting a maximum UV light intensity of 7.5 W / cm2 at 365 nm, the LED

provides high stability emission, minimal thermal effects and very low power

consumption. The LED lifetime of 20,000 hours is considerably longer than that

of lamps in conventional curing systems. Several different condenser lenses can

be chosen, allowing the customer to select the ideal emission profi le for their

application. Additionally the LC-L2 is ideal for operation inside a clean room as

the unit requires no fan for cooling, solving the problems of vibration and dust.

Hamamatsu’s new Lightningcure® concept is very fl exible and allows

simple control and operation via several different interfaces. Controlling the

lightsource directly via a PLC enables a small and low-cost system consisting

of only the LED-Head with cable and small driver unit. Alternatively it is

possible to operate up to 8 LED-Heads with driver hubs via a PC or by using

the optional control box.

Having gained a solid reputation for high quality spot light sources over many

years, Hamamatsu consolidated all its technologies and experience in the new

LC-L2 Lightningcure®.

This is the UV light source you’ve been waiting for!

Author: Anita Schroedl, Hamamatsu Photonics Germany

Features

Slim body

Long life

No fan

High stability

High light output

Low power consumption

Applications

UV adhesive curing

UV irradiation experiments

Specifi cations


UV Irradiation Intensity 7500mW/cm2

Peak Wavelength 365 nm ± 5 nm

Class 3B (JIS C 6802:2005)

LED Life 20 000 hours

Input Voltage (DC) 12 V to 24 V

Power Consumption (Max.) 8 W

Cooling Method Air cooling without blower

Operating Temperature Range +5 deg.C. to +35 deg.C.

Storage Temperature Range -10 deg.C. to +60 deg.C.

Operating/ Storage Humidity Range Below 80% (No condensation)

Applicable StandardEN61326:1997+A1: 1998 ClassA

EN61010-1 2001

Warranty Period 1 year

NEW


News 2009 Vol. 1 51

High voltage power supplyC10764 series

New High Voltage Power Supply Units

The C10764 series are compact, PC-board mountable, high voltage power

supply units specifi cally designed for photomultiplier tubes (PMT).

The C10764 series are available in two variants: the C10764, 0 to

-1250 V supply, and the C10764 -50, 0 to +1250 V supply. Both power

supplies output a maximum of 1mA. The newly developed circuitry achieves

high performance and low power consumption whilst maintaining low drift

and ripple noise (0.01% typ.), excellent temperature dependence of ±0.01%/

deg.C. and a total stability that is 10 times that required of a PMT.

High voltage control is easily achieved using either an external potentiometer

or external low voltage 0 to +5 V supply, allowing a wide variable output

range with a fast time response. The C10764 series also offers improved

failsafe functions including protection against reversed power input, reversed

or excessive control voltage and continuous overloading.

Features

Compact and lightweight

High stability


Fast response

Wide variable output range

Ample protective and failsafe functions

Applications

High voltage power supply for photomultiplier tubes

Author: Arnaud Bingono, Hamamatsu Photonics France

NEW


News 2009 Vol. 152

New high sensitivity photon counting head H10682-110

Counting Linearity and Overlight Detection Output


Relative Output Light

1.E+07

1.E+06

1.E+05

1.E+04

1.E+03

Ou

tpu

t C

ou

nt

(S-1

)

1.E+08

1.E+09

1.E+10

1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12

4V

0VOver Light Detection Output

Output Count

The H10682-110 is the fi rst photon counting photomultiplier tube (PMT)

module to integrate the newly developed and unique Super Bialkali (SBA)

photocathode. It achieves typical quantum effi ciency (QE) of 35% at a peak

wavelength of 330 nm and maintains a high QE across the entire spectral

response range of 280 nm to 700 nm.

This new module offers 30% higher output signal compared to conventional

photon counting heads using bialkali photocathodes, opening up new

possibilities in low light level detection.

The H10682-110 is built around Hamamatsu’s renowned metal package

photomultiplier tube (TO-8 package type), with integrated high-speed photon

counting circuit and high-voltage power supply circuit and only requires +5 V

input for simple operation.

To protect the PMT from over-exposure to bright light sources, the module has

a built-in 'over-light' detection circuit which will alert the user, allowing the

user to adjust their light source for optimum data acquisition.

Features

Excellent low light detection capabilites

Compact size (2/3 of H7155 series)

High sensitivity

No adjustment required


Applications

Biomedical (Chemiluminescence and Bioluminescence)

Fluorescence detection

Other low level light detection

Author: Laurent Pansolin, Hamamatsu Photonics France

Specifi cations


Input Voltage +4.75 to +5.25 V

Spectral Response 280 to 700 nm

Effective Area 8 mm dia

Typical Dark Count 50 cps

Pulse-Pair Resolution 20 ns

NEW


News 2009 Vol. 1 53

Xenon lamp L10878

Spectral Distribution

TLS B0001EA

3000

20

40

60

80

100

400 500 600

WAVELENGTH (nm)

RE

LA

TIV

E I

NT

EN

SIT

Y (

%)

700 800

Visible short arc refl ector lamp

Features

High brightness over the visible spectral range

from 400 nm to 750 nm

Built-in condensing refl ector,

allowing easy coupling to optical fi bre

Compact size

Excellent lamp stability

Long lifetime (at least 2 times that of

comparable lamps in the market)

No arc point shift, allowing easy coupling to optical fi bre

and easy lamp replacement

Applications

Endoscopy

Microscopy

Illumination source for medical imaging

Fibre-optic light source for industrial inspection

The L10878 is a new long life 100W xenon short arc refl ector lamp which

emits light in the visible spectral range from 400 nm up to > 750 nm,

providing a bright white light illumination source. The built-in condenser

refl ector provides good light coupling into optical fi bre, making the lamp

particularly useful for medical and industrial endoscopes.

Author: Tim Stokes, Hamamatsu Photonics UK

Specifi cations


Lamp Rating Approx. 100 W

Arc Length 1.0 mm ± 0.1 mm

Focusing Angle Approx. 44 degrees

Lamp Current (DC) 7.0 A ± 0.5 A

Lamp Voltage (DC) Approx. 13.5 V

Light Output StabilityFluctuation 1.0 %

Drift ±0.5 %/h

Guaranteed Life*1 1000 h

Average Life 1500 h

Installation Orientation Horizontal ±15 degrees

Cooling Method Forces air cooling

Weight Approx. 150 g

*1: The life end is defi ned as the time when the light output intensity at all wavelengths falls to 50% of the Initial value or when

the output fl uctuation (p-p) exceeds 1.0%.

As the refl ector condenser is built-in, lamp replacement in

the fi eld is simple and there is no need for alignment or

calibration of an external optical system, as is the case with

conventional xenon arc lamps.

Using Hamamatsu’s expertise in electrode design, the lamp

has a typical operating lifetime in excess of 1500 hours,

around 3 times the longevity of other lamps currently in the

market, thus reducing the service period of any equipment

using this lamp.

NEW


News 2009 Vol. 154

UV-VIS light source L10706

S2D2 VUV miniature light source module

The L10706 is a miniature vacuum ultra-violet (VUV) light source unit, which

emits light in the spectral range from 115 nm up to 400 nm, with a peak

emission around 160 nm. The L10706 utilises a specialist magnesium fl uoride

window with high UV transmittance. This is vital as light below about 180

nm is not transmitted by regular or even specialist glass material, including

synthetic silica. Such short wavelength radiation is also absorbed by oxygen in

the surrounding air. The L10706 is also fi tted with an ICF-70 vacuum fl ange so

the lamp can be easily operated in an environment devoid of air.

The new VUV Deuterium lamp itself is housed inside a fl exible SUS tube,

allowing easy manipulation of the lamp position inside any equipment. The

high voltage required to drive the high power miniature VUV Deuterium lamp

is provided by the purpose built module, located in a separate unit, designed

to be placed outside of the vacuum chamber.

Author: Tim Stokes, Hamamatsu Photonics UK

Features

High brightness over the spectral range

from 115 nm to 400 nm

Compact, miniature size

Good lamp stability

Long lifetime

Flexible housing to allow easy manipulation

of lamp position

Easy lamp replacement

Unique VUV lamp cooling design

Applications

VUV spectrophotometer

Excitation light source

Photo-ionisation

Deep UV material studies

Electro-static removalGeneral characteristics

Parameter Description/Value Unit

Spectral Distribution 115 to 400 nm

Window Material MgF2 -

Light Angle ±7.5 degrees

Vacuum Flange*1 ICF-70 rotating fl ange -

Cooling Method*2Air-cooled

(Cooled air: 20 l/min to 30 l/min)-

Sealing Force Retention Below 1.33 x 10-4 Pa L/s (1 x 10-6 Torr L/s) -

WeightLight source: Approx. 500, Power supply:

Approx. 120g

Operation Ambient Temperature +10 to +35 deg.C.

Operation Ambient Humidity Below 80 (Ne condensation) %

Storage Temperature -10 to +60 deg.C.

Storage Humidity Below 80 (No condensation) %

*1: Use a copper gasket for sealing the light source unit´s vacuum fl ange and an O-ring for installing a replacement lamp.

*2: Cooling must be performed by supplying cooling air from the high-pressure tube.

Recommended operating conditions and characteristics (at 25 deg.C.)

Parameter Description/Value Unit

Warm-up Time 25 ± 5 s

Output Stability

(at 230 nm)

Fluctuation 0.05 %

Drift ±0.3 %/h

Guaranteed Life (230 nm) 1000 h

Input Voltage (AC)100 V to 240 V (100 V/200 V Automatic

selection), Single phase 50 Hz/60 Hz-

Power Consumption (Max.) 40 VA


News 2009 Vol. 1 55

MCP for TOF-MS F1551-074, F1094-074, F1552-074, F1217-074

Microchannel plates for TOF-MS

Hamamatsu Photonics introduce four new MCP detectors designed for TOF-MS

applications. Owing to their exceptional fl atness and resistance to warping,

these new MCPs produce very small timing jitter, typically 0.5 ns compared

to 4.6 ns exhibited by other MCPs available on the market. Additionally, the

narrow channel diameter, either 4 µm or 6 µm, contributes to the improved

timing jitter characteristics.

Using Hamamatsu’s advanced manufacturing techniques; it was possible to

produce MCPs with excellent resistance to warping, ideal for the demanding

environment of TOF-MS.

Features

Small channel diameter

Exceptional fl atness (little warping)

Highly robust

Small timing jitter

High speed

Applications

TOF-MS

Author: Lorraine Rolland, Hamamatsu Photonics France

Note:*1 at 1000 V *2 Below 1.3 x 10-4 Pa

Parameter F1551-06 F1551-074 F1094-074 F1552-074 F1217-074 Unit

Outer Size: A Ø17.9 Ø24.8 Ø32.8 Ø49.9 mm

Electrode Area: B Ø17 Ø23.9 Ø31.8 Ø49 mm

Effective Area: C Ø14 Ø20 Ø27 Ø42 mm

Thickness: D 0.2 0.3 mm

Channel Diameter 4 6 µm

Channel Pitch 5 7.5 µm

L/D 50 -

Open Air Ratio (Typ.) 60 %

Bias Angle $ 12 degrees

Gain (Min.)*1 1 x 104 -

Resistance 10 to 100 20 to 200 10 to 100 6.7 to 66 4 to 40 M"

Maximum Dark Current 5 x10-13 A/cm2

Maximum Linear Output Signal 10 % of strip current -

Supply Voltage (Max.) 1000 V

Ambient Temperature -50 to +70 deg.C.

Operating Pressure Condition

(Max.)1.3 x 10-4 *2 Pa

Dimensional outlines and specifi cations (unit: mm)

50 mm

NEW

SYSTEMS PRODUCTS

News 2009 Vol. 156

HCImage

HCImage Analysis combines the functionalities of Live and

Acquisition with full analysis capabilities. This gives the user

access to motion tracking, dynamic intensity analysis during

or post acquisition using macros. It has been optimised to

analyse the large images generated by the Hamamatsu

NanoZoomer slide scanner. Deconvolution and Visualization

options can be added to either Acquisition or Analysis to

reconstruct 3D images from a sequence.

Features

Full DCAM support

Image capture and time lapse

Control of motorized peripheral devices:

Multi-dimensional imaging

Motion tracking

Dynamic intensity analysis

Equation editor

Scheduler

High speed imaging: streaming

Applications

Fluorescence imaging: FRET, Q dots,

ratio imaging, TIRF, protein localization

Luminescence imaging: luciferase, aequorin

(X, Y, Z, !) scan: multiple site time lapse, Z scan

Multiprobe simultaneous imaging

Object counting and quantifi cation

Particle tracking

Membrane potential measurement

Software solution for scientifi c imaging

Hamamatsu introduces HCImage, a new software solution for life science and

materials imaging. HCImage is specifi cally designed to support Hamamatsu

DCAM, and has an easy-to-use interface with extensive functionality for

optimized workfl ow and increased effi ciency.

The new graphical user interface gives maximum space to the image, whilst

maintaining easy access to device control panel and image analysis during or

post acquisition.

There are three software modules available and you can select the best

combination of camera and software to match your application.

HCImage Live, supplied as standard with all Hamamatsu cameras, allows

image acquisition and time lapse recordings with visual feedback with live

intensity histogram. It also allows detection (threshold or manual) and simple

analysis (area, length etc.) of multiple objects in a single image.

HCImage Acquisition is the key to performing multi-dimensional imaging. It

offers the same functionality of Live, plus the ability to control a wide range of

motorized peripheral devices (microscope, shutter, fi lter wheel, fi lter exchanger).

With this one module, you can easily drive all your hardware and perform

complex acquisitions using the scheduler. This scheduler function also allows

easy programming of time lapse with multiple events. Furthermore, thanks

to our built-in Equation Editor, users can create their own measurements and

expand the already extensive list of 150 measurements available.

Author: Christelle Catone, Hamamatsu Photonics France

SYSTEMS PRODUCTS

News 2009 Vol. 1 57

HCImage Live HCImage Analysis

HCImage Acquisition

HCImage Analysis

SYSTEMS PRODUCTS

News 2009 Vol. 158

iPhemos SD

IC defect detection system with tester docking

The new iPhemos SD complements our product line-up of ‘state-of-the-art’

systems for defect localisation on integrated circuits.

There is a clear demand in IC failure analysis, for localisation of defects of

devices under dynamic operation conditions. In many cases this means that

it is necessary to connect a tester to a defect localisation system. Therefore,

we have extended our product line with the new iPhemos SD, an inverted

microscope system prepared for tester docking with a small footprint.

iPhemos SD is a modular microscope system for front and backside device

analysis which can be confi gured to include

- emission microscopy using InGaAs cameras

- laser scan microscopy e.g. with OBIRCH and soft defect localisation

According to customer preference, the iPhemos SD can be connected to tester

heads either by direct docking or by coupling the tester head and iPhemos

SD via a short cable interface. The iPhemos SD has been designed to fi t with

most commercial tester systems. Special attention has been paid to design a

compact and mobile system. It is possible to connect different tester systems

within a lab simply by moving the iPhemos SD.

The optical system of iPhemos SD can accommodate up to 5 different lenses

for macroscopic imaging (0.8 x lens), through to imaging in the Nanometer

scale with our solid immersion lens system “NanoLens”.

Author: Hubert Ortner, Hamamatsu Photonics Germany

Features

IC defect localisation with direct tester head docking

Flexibility to confi gure the system according

to specifi c needs

High mechanical and optical precision

High stability

800 mm height

Applications

Emission microscopy

OBIRCH

PLS

SDL

iPhemos SD main unit and operation rack.

NEW

SYSTEMS PRODUCTS

News 2009 Vol. 1 59

New Streakscope C10627

Fluorescence Lifetime Spectroscopy SystemFurther Improved

Streak technology has been established for many years as a high-end method

for time-resolved fl uorescence spectroscopy and this technology is employed in

Hamamatsu Photonics range of complete measurement systems.

Other well-known methods in this fi eld are time-correlated single photon

counting (TCSPC) using a PMT or MCP-PMT as a detector and gated spectros-

copy using a gated II-CCD. Compared to these methods, streak-based systems

offer two major advantages. The fi rst is its unsurpassed temporal resolution,

reaching into the sub-ps domain. The second is its "2-dimensional" measure-

ment method, yielding superior measurement effi ciency. The attached table

shows the fundamental comparison of these three major techniques.

A complete picosecond time-resolved fl uorescence system.

Fundamental comparison of TCSPC, Gated II-CCD and Streak

TCSPC Gated II-CCD Streak

Recording method

Records temporal

traces, but only at a

single wavelength

at spectra, but only

at a single wave-

length at a time.

The spectral axis

must be scanned

sequentially.

Records full spectra,

but only at a single

time position at a

time. The time axis

must be sampled

sequentially.

Records full

2-dimensional

time-resolved

spectra simultane-

ously, without any

scanning.

Can exploit high rep-rate sources yes no yes

Can exploit low rep-rate sources no yes yes

Yields Poisson statistics yes no yes

Typical lifetime ranges ps to ns ns to ms sub-ps to ms

In the case of the streak method, no valuable photons are lost and the

measurement times needed to achieve good data are dramatically reduced.

Therefore, even extremely weak samples can be measured within reasonable

times.

Like TCSPC, the streak method can also detect single photons and count them

individually, thereby giving excellent (Poissonian) measurement statistics. This

is important to achieve a large dynamic range (105:1 and more) and for correct

data analysis. Unlike TCSPC, a streak system can count photons even when

there are many photons in a single fl uorescence pulse, thereby even allowing

the use of light sources with a low repetition rate.

The brand-new C10627 streak detector is the successor of our renowned

"Streakscope" detector. It offers two big quantitative improvements:

The streak sweep repetition rate is further improved by a

full order of mag nitude. (This means it can integrate up to

20 million fully time-resolved spectra per second!) This will

give ten times shorter measurement times in the case of

very weak samples.

The maximum photon counting rate is improved by a factor

of about fi ve. This allows shorter measurement times in the

case of samples with stronger emissions.

Both improvements further extend the capabilities of these

systems, allowing effi cient measurements even in the most

demanding applications.

Author: Uwe Denzer, Hamamatsu Photonics Germany

The new C10627 with improved capabilities.

NEW

SYSTEMS PRODUCTS

News 2009 Vol. 160

LED light metering and photometry systems C9920 series

C9920-21

The C9920 series has been developed for characterisation of OLED materials

and devices by measuring the absolute photoluminescence quantum yield,

the external quantum yield of fl at OLED devices and their angle dependent

emission characteristics.

The series has been extended with features allowing the characterization of

LEDs and SMD LEDs. Like the established systems of the C9920 family the

new types use a PMA 12 CCD spectrometer coupled to a 5.3 inch integration

sphere by a fi bre bundle. The spectrometer employs a cooled back-thinned

chip for highest sensitivity. All systems can be upgraded easily to fi t other

applications.

The C9920-21 system measures the light distribution of LED devices operated

at a constant current or voltage with the sample mounted on a rotating stage.

The whole emission spectrum is measured for every emission angle. The system

also allows measurement of luminous intensity under CIE conditions.

Features

Software controlled rotating stage

IVL measurements

Measured parameters: Light distribution, luminous intensity, radiation

intensity, chromaticity, dominant wavelength, excitation purity, distributed

temperature, colorimetric parameters

SIGNAL INPUT

PHOTONIC MULTI-CHANNEL ANALYZER C10027

LED light distribution

optics

Sample holder for LED light distribution measurement(Bullet type, φ3 mm, φ5 mm)

Sample holder for LED light distribution measurement(For SMD LED mounted on board)

Auto rotating stage for LED light distribution measurement

DS102

Quantum yield measurement

software

PC

* Sample holders are selectable options.

Source meterPhotonic multichannel analyzer PMA-12

Integrating sphere unit (3.5 inch compact unit) for total luminous flux measurements

Light-shielding adapter for EL external quantum yield measurements

LED Light Distribution Measurement System C9920-21

NEW

Measurement in light distribution mode

Light distributions were measured under a constant current

or voltage while the angle was automatically changed by a

rotating stage. Since intensity distributions are measured as

a spectrum, this mode also measures changes in colorimetric

parameters at each angle along with changes in the luminous

intensity at each angle.

Measurement Examples

Measurement example(Variable current mode)

Measurement example (Light distribution mode)

SYSTEMS PRODUCTS

News 2009 Vol. 1 61

C9920-22

The C9920-22 system uses an integration sphere as sample chamber and

measures the total luminous fl ux and luminous effi ciency of LED devices.

Colorimetric parameters such as chromaticity and colour rendering are

determined simultaneously.

Features

Using an integration sphere as sample chamber the measurements does

not depend on the emission angle characteristics of the sample

The emission spectrum can be measured instantly for different current

values;

Measured parameters: Luminous fl ux, radiant fl ux, peak wavelength,

dominant wavelength, chromaticity, deviation, colour rendering, effective

power, voltage, current, electric effi ciency, external quantum effi ciency

As well as luminous fl ux and angle-dependent emission characteristics, the CIE

averaged LED intensity is also an important value in LED characterization. For

such measurement, the LED is not located inside the integration sphere but

coupled to it using special input optics.

Features

Coupling optics which meet CIE conditions A and B

Condition A: Field of view angle of 0.001 (2 degrees), distance 0.316 m

Condition B: Field of view angle 0.01 (6.5 degrees), distance 0.1 m

Measured parameters: Luminous intensity, radiation intensity, peak wave

length, FWHM, chromaticity, dominant wavelength, deviation, colour

rendering, effective power, voltage, current

Author: Tanja Schuettrigkeit, Hamamatsu Photonics Germany

SYSTEMS PRODUCTS

News 2009 Vol. 162

Operating Principle of TDI

TDI (Time Delay Integration):

Object MotionX-ray TDICamera

Object

X-ray souce

Shield box

Belt conveyor

TDI Sensor

Signal intensity

Time Delay Integration is a technology of scanning in which a frame transfer device produces a continuous video image of a moving object by means of a stack of linear arrays aligned with and synchronized to the motion of the object to be imaged in such a way that, as the image moves from one line to the next, the integrated charge moves along with it, providing higher resolution at lower light levels than is possible with a line-scan camera.

TDI camera line-up

Advanced TDI technology for high sensitivity and high speed applications

Hamamatsu Photonics TDI-CCD image sensor offers signifi cant improvements

in performance compared to standard sensors, particularly for low light level

and high speed applications.

High speed and high sensitivity (C10000 series)

The C10000 series of TDI line scan cameras, feature 128 vertical stages

ranging from 1024 pixel up to 4096 pixel as horizontal stages. The sensors

multiple output ports yields a high-speed line rate of up to 100 kHz and is

capable of bidirectional operation (image acquisition can be performed in

either direction or raster scan).

The structure of the TDI-CCD back-thinned sensors provides high sensitivity

over a broad range from 200 nm to 1100 nm, with extremely high QE in the

ultraviolet, visible and NIR region.

Specifi cations

1024 (H), 2048 (H) and 4096 (H) spatial resolution

with 128 (V) integration

Line rate up to 100 kHz

8/12 bit A/D converter

High sensitivity from UV to NIR

Low noise, versatile TDI camera (ORCA-TDI C4742-95-12ERT)

The ORCA-TDI uses an advanced CCD chip with high sensitivity

in VIS-NIR region and features good noise characteristics at

high frame rates. The peltier cooled hermetic vacuum-sealed

head can be cooled down to -20 deg.C., reducing dark noise

and minimising thermal drift. The ORCA-TDI is the camera of

choice for demanding scientifi c and industrial applications.

Specifi cations

1344 (H) spatial resolution with 1024 (V) integration

Line rate up to 8.8 kHz

12 bit A/D converter

Low readout noise (RMS) typ 8 electrons

Stable cooling -20 deg.C.

TDI-CCD sensors are able to capture clear images of fast-

moving objects by transferring signal charges from one pixel

to the next in the same direction and at the same speed as

the moving object. Through this process, the effective exposure

time is increased by a factor which is equal to the number of

the TDI stages in the sensor. This operation mode dramatically

boosts sensitivity to high levels, even when capturing fast

moving objects at low light intensity.

TDI-CCD sensors and cameras are ideal for a wide range of

applications including industrial inspection of moving objects,

semiconductor inspection, fl ow cytometry, UV detection, red

and near infrared fl uorescence detection.

SYSTEMS PRODUCTS

News 2009 Vol. 1 63

Qu

an

tum

eff

icie

ncy

(%

)

Wavelength (nm)

*This is typical, not guaranteed

900 700 4000

40

20

60

80

10

30

50

70

300 500 600 800 1000 1100

Qu

an

tum

eff

icie

ncy

(%

)

Wavelength (nm)


800 1000 600 4000

40

20

60

80

100

10

30

50

70

90

200 1200

Qu

an

tum

eff

icie

ncy

(%

)

Wavelength (nm)


1000 800 5000

40

20

60

80

10

30

50

70

400 600 700 900 1100

C9100-03 C4742-95-12ERT

Spectral response

Ultra high sensitivity, electron multiplication (EM-TDI Camera C9100-03)

The combination of EM and TDI technology provides seamless high speed

scanning for ultra low light objects. The proprietary hermetically sealed vacuum

chamber evacuated to 1.33 × 10-6 Pa (10-8 Torr) provides stable cooling at

-50 deg.C., even when the ambient temperature fl uctuates from 0 deg.C. to

+40 deg.C. . This stable cooling temperature contributes to a uniform EM gain

factor of 2000 times.

Cooled TDI Camera (C10990-930T)

The Cooled TDI Camera C10990-930T series combines all the benefi ts of high

speed operation, high sensitivity, low noise and wide dynamic range which is

essential where the aspect ratio of the subject being imaged is signifi cantly

asymmetric. Front-illuminated and back-thinned cooled sensors combined with

a wide range of resolutions make this camera ideal for all applications from UV

to NIR.

Specifi cations

1024 (H) spatial resolution with selection of 58,

122, 250 (V) integration

Front-illuminated or back-thinned CCD

Line rate up to 169 Hz


Stable cooling at 0 deg.C.

High sensitivity from UV to NIR

Specifi cations


Line rate up to 30.9 kHz

High EM gain (2000x)


Stable cooling at -50 deg.C.

Various external synchronisation features

C10000 series

SYSTEMS PRODUCTS

News 2009 Vol. 164

3CCD Digital Colour (ORCA-3CCD-TDI C7780-20T)

The ORCA-3CCD-TDI digital colour camera incorporates three cooled TDI-

CCD chips, providing a rapid readout, high-resolution and superior signal to

noise ratio. The three colour CCDs employ an RGB prism to achieve extremely

high quality colour representation without colour blur, achieving performance

diffi cult to achieve with a single-CCD camera. The CCDs are the same as those

used in the ORCA-TDI, providing proven high quantum effi ciency and high

resolution, cooled to 0 deg.C. for high sensitivity detection.

Specifi cations


Line rate up to 8 kHz


Stable cooling at -20 deg.C.

Total 36 bit colour resolution

X-ray TDI Camera (C10650 series)

The C10650 series X-ray TDI camera is ideal for in-line X-ray applications

which require high speed operation, high sensitivity and high resolution;

features often demanded in applications such as medicine and drug

inspection, printed circuit board (PCB) inspection and surface-mount

component inspection.

Geometrical magnifi cation is normally used to perform high resolution X-ray

inspection of very small objects. The X-ray TDI camera offers both wide

effective area and high resolution, achieving a large fi eld of view with high

resolution in one scan, also in case of wide area imaging.

Specifi cations

3072 (H) or 4608 (H) spatial resolution with 128 (V) integration

Line rate 2.262 kHz (Max. 1 x 1)


Direct X-ray imaging using fi bre optical plate with scintillator

Author: Mauro Bombonati, Hamamatsu Photonics Italy

Mounted Board

Back-fi ll under stacked parts can be seen. Wire bonding in the IC can be seen. Void of die-bond pad can be seen. Overlapping fi lms can be seen.

TDI camera line-up

SYSTEMS PRODUCTS

News 2009 Vol. 1 65

Sample Image

X-ray line scan camera C9750-27FCC,-FCD

C-Shaped X-ray Line Scan Camera for Tyre Inspection

Based on the established technology of the Hamamatsu X-ray line scan

camera series C9750 we now offer this outstanding type of camera for the

tyre market. The exceptional C-shape of this camera is optimized to meet the

demands in the tyre inspection fi eld.

Combined with a special X-ray source the Hamamatsu C9750-27FCC,-FCD

is able to scan a rotating tyre line by line. As a result of the special camera

geometry the entire volume of a tyre and its inner life can be captured during

such a scan. The cap of tyre as well as the two side walls.

The high sensitivity and wide dynamic range provide fast and excellent

detection of the carcase for outstanding and reliable inspection.

Features

Detection widths of 1382.4 mm

Wide sensitivity range from 25 kV to 160 kV

High scanning speed from 4 m/min up to 36 m/min

No gap (Modules gap < 1 pixel)

Specifi cations

Pixel Pitch: 0.4 mm

Number of pixels: 3456

Gd-Scintillator

Line rate: 0.167 kHz to 1.5 kHz

Pixel Clock: 5.33 MHz

A/D conversion: 12 bit

Digital Interface: RS422

Author: Stefan Kappelsberger, Hamamatsu Photonics Germany

NEW

SYSTEMS PRODUCTS

News 2009 Vol. 166

PMA-20 is a high speed photonic multichannel analyser with 100 µs temporal

resolution. It contains a light-effi cient grating spectrograph, back-thinned TDI-

CCD sensor (simultaneous high speed integration and high sensitivity), power

supply and electronics in a compact unit. It measures a wide spectrum range

from 200 nm to 950 nm.

As both wavelength axis and spectral response characteristics are calibrated

at the factory, spectral measurements can be easily and accurately taken. This

device is capable of high speed integration; 10,000 times integration can be

achieved in just 1 second and good signal to noise can be obtained faster than

conventional methods.

It is also easy to combine the PMA-20 with various types of light sources and

external equipment (sample holder, stopped-fl ow cell, refl ection measurements

optics, etc) through optical fi bre.

The software supplied has several different measurement modes such as:

Standard measurements: spectrum display, display of changes over time,

3D display

Refl ective measurements

Transmittance and absorption measurements

Chromaticity measurements (light sources & objects)

Author: Elvis Dzamastagic, Hamamatsu Photonics France

In addition to trigger functions (internal/opening & external

exposure start), this device offers the possibility to monitor

the change of light intensity and to start measurement

automatically, i.e. an optical trigger.

The PMA-20 is suitable for applications in a wide variety of

scientifi c and industrial domains such as single shot measure-

ment of ms pulse emission, phosphorescence, discharge and

plasma, observation of structural change of proteins or

chemical reaction and movement of liquid crystal molecules

in the range of milliseconds.

Features

Single shot spectrum measurement with 100 µs

temporal resolution

High speed integration

Easy measurements using optical fi bre

Factory calibrated spectral response

and wavelength axis characteristics

Applications

Time resolved spectrum measurement for emission

Protein interaction analysis with absorption spectrum

Chemical reaction tracking with a stopped-fl ow method

Photo physics and laser spectroscopy with

submilisecond temporal resolution

Specifi cations


Photo-detector BT-CCD linear image sensor

Wavelength 200 nm to 950 nm

Wavelength resolution (FWHM) 3 nm

Exposure time 100 µs to 1 s

Number of photosensitive device channels 2048 ch

Pixel size 12 µm x 972 µm

Read-out noise 100 electrons

Dark current 100 electrona/scan (100 µs) at 25 deg.C.

AD resolution 12 bit

Spectrograph Czerny-turner type

Spectrograph F number 4

Fibre Quartz fi bre 1.5 m

Interface Camera Link, USB

Power supply AC100 V to AC240 V, 50 Hz/60 Hz

PMA-20New Version of the Photonic Multichannel Analyser (PMA)

NEW

SYSTEMS PRODUCTS

News 2009 Vol. 1 67

Data analysis unit

Basic software

Camera LinkSIGNAL INPUT

Xenon light source

Sample holder

Photonic Multichannel AnalyzerPMA-20

Absorption measurement systems Absorption spectrum measurement of BTB solution (pH indicator)

Data analysis unit

Basic software


Xenon light source

Stopped-flowcell


Stopped-fl ow method measurement systems Change in absorption

Spectrum change measurement with stopped-fl ow method

*Data is provided by courtesy of Department of Biophysics Division of biological Sciences Graduate School of Science Kyoto University.

Phosphorescence measurement systems Phosphorescence measurement

Phosphorescence measurement

The PMA-20 measures the attenuation process of phosphorescence materials excited by YAG laser in single shot. It also measures by single shot to excite the materials with YAG laser (266 nm, 3 mJ).

Absorption spectrum measurement of BTB solution (pH indicator)

The PMA-20 measures the spectrum change of the weak acid BTB solutions from yellow to blue by adding sodium bicarbonate with 100 µs temporal resolution.

The PMA-20 measures the reproduction process of rhodopsin as opsin and retinal are mixed with the stopped-fl ow method.

Data analysis unit

Base software


Sample holder

Excitation laser


SYSTEMS PRODUCTS

News 2009 Vol. 168

ORCA camera line-up

Optimum solutions for life science and OEM-type applications

The renowned Hamamatsu Photonics ORCA Digital CCD camera line-up has

been revised with the addition of the ORCA-R2, ORCA-03G and ORCA-05G

cameras. The ORCA-03G and ORCA-05G were previously known as the

C8484-03G01 and C8484-05G01. This change is intended to simplify and

harmonise our most successful cameras within the ORCA range – a name

synonymous with the Hamamatsu commitment to quality, reliability and

innovation.

Like all the other cameras in the ORCA range, these three cameras offer

excellent performance for demanding customer applications. The ORCA-R2,

ORCA-03G and ORCA-05G all share the same exclusive Hamamatsu ER-150

progressive scan interline 1344 x 1024 pixel CCD. This enables them to achieve

70% quantum effi ciency with low noise and high resolution – meaning that

even in low light level conditions, these cameras will deliver impressive results.

ORCA-05G is a cost-effective solution where customers require great

performance without compromising on quality. The compact head is small

enough to fi t in any setup and requires no additional controller.

ORCA-03G comes in the same compact head as the ORCA-05G, but includes

peltier cooling, for more demanding imaging applications that require

extended exposure times.

ORCA-R2 provides un-surpassed image quality, maximum versatility and can

be operated using either air or water-cooling.

The ORCA cameras are fully supported by a Software Development Kit –

making it straightforward for OEM-type integration into third-party equipment.

The Hamamatsu DCAM-API enables seamless control of Hamamatsu cameras

within the OEM customer’s own software. Future-proof expandability is

therefore guaranteed without the need for the customer to re-build the host

application.

Features

High resolution

Excellent dynamic range

Firewire 1EEE 1394 interface

Progressive scan interline CCD – no mechanical shutter

Author: Jim Owens, Hamamatsu Photonics UK

Applications

Fluorescence microscopy

DNA chip reader

High throughput screening

X-ray scintillator readout

Semiconductor inspection

Specifi cations

Exclusive 1.37 million pixel ER-150 CCD

Exposure times from 10µsecs to over 1 hour

Minimum 12-bit A/D converter

Sub-array readout

News 2009 Vol. 1 69

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News 2009 Vol. 170

News 2009 Vol. 1 71

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Impressum

Hamamatsu Photonics News

Publisher and copyright:

Hamamatsu Photonics

Deutschland GmbH

Arzbergerstr. 10, D-82211 Herrsching

am Ammersee, Germany

Telephone: (49)8152-375-0

Fax: (49)8152-2658

Sitz der Gesellschaft: Herrsching

Amtsgericht München HRB 79474

Geschäftsführer: Dr. Peter Eggl

USt/VAT-Id.: DE128228814

http://www.hamamatsu.de

[email protected]

Editor and responsible for content:

Dr. Peter Eggl

Publishing frequency:

Bi-annual, Date of this issue

May 2009

Graphic and realisation:

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