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Plenary ScheduleSunday, 5 June 2011

5:40 PMBaltimore Convention Center – Level 400, Ballroom III-IV

Session RSU5A: RFIC PlenarySession Chair: David Ngo – RFMD, Inc.Session Co-Chairs: Albert Jerng - RalinkJacques C. Rudell - Univ. of Washington

Welcome Message from General and TPC Chairs, RFIC Outstanding Recognition andAnnouncement of Student Paper Awards

RSU5A-1: “RF Coexistence – Challenges and Opportunities”, Samuel Sheng,Telegent Systems

RSU5A-2: “3G to 4G Transition – Challenges and Opportunities”, Ron Ruebusch,Avago Technologies

7:00 PMBaltimore Convention Center – Level 400, Ballroom I-II

Session RSU5B: RFIC Reception

Monday, 6 June 20118:00 AM

Room 337-338Session RMO1A: Wireless Data Transceiver Architectures and

TechniquesChair: Julian Tham, Broadcom

Co-Chair: Li Lin, Marvell

RMO1A-1 8:00 AMA 2.4GHz 2Mb/s Digital PLL-based Transmitter for 802.15.4 in 130nm CMOS

Mohammad Mahdi Ghahramani1, Mark A. Ferriss2 and Michael P. Flynn1

1Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA, 2IBM T. J.Watson Research Center, Yorktown Heights, NY, USA

RMO1A-2 8:20 AMFull-Duplex Crystalless CMOS Transceiver with an On-chip Antenna for WirelessCommunication in Engine Controller Board of Hybrid Electric Vehicles

Kyujin Oh1, Swami Sankaran1, Hsin-Ta Wu1, Jau-Jr Lin1, Minsoon Hwang1 and Kenneth, K O2

1Silicon Microwave Integrated Circuits Research Group (SIMICS), Dept. of ECE, University of Florida,

Table of Contents file:///L:/JOBS/47811 IEEE RFIC/47811 FLASH DRIVE-HTML Search/...

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Gainesville, FL, 2Texas Analog Center of Excellence and Dept. of Electrical Engineering, University ofTexas at Dallas, Richardson, TX

RMO1A-3 8:40 AMA Fully Integrated 802.11n Radio with 24GHz Harmonic LO Generation for Low-cost, LowPower, Multi-standard Systems

R. Sadhwani1, A. Ben-bassat2, R. Banin2, H. Shang1, B. Jann1, O. Degani2

1Intel Corporation, Hillsboro, OR, USA, 2Intel Corporation, Haifa, Israel

RMO1A-4 9:00 AMDigital RF Receiver Front-end With Wideband Operation Capability for m-WiMAX

Heesong Seo, Inyoung Choi, Changjoon Park1, Jehyung Yoon1 and Bumman Kim1Department of Electrical Engineering and Division of ITCE, POSTECH, Pohang, Republic of Korea

RMO1A-5 9:20 AMA QPLL-Timed Direct-RF Sampling Band-Pass ΣΔ ADC with a 1.2 GHz Tuning Range in 0.13µm CMOS

Subhanshu Gupta1, Daibashish Gangopadhyay1, Hasnain Lakdawala2, Jacques C. Rudell1 and David J.

Allstot1

1Univ. of Washington, Seattle, WA, 2Intel Corp., Hillsboro, OR


Room 339-340Session RMO1B: Digital to RF and Sigma-Delta Transmit

ModulatorsChair: Noriharu Suematsu, Tohoku University

Co-Chair: Gernot Hueber, NXP Semiconductors

RMO1B-1 8:00 AMAll-Digital Transmitter based on ADPLL and Phase Synchronized Delta Sigma ModulatorJian Chen, Liang Rong, Fredrik Jonsson and Li-Rong ZhengiPack Vinn Excellence Center, ICT School, KTH (Royal Institute of Technology), Kista, Stockholm, Sweden

RMO1B-2 8:20 AMA 0.7-3GHz Envelope ΔΣ Modulator Using Phase Modulated Carrier Clock for Multi-mode/bandSwitching AmplifiersShinichi Hori, Kazuaki Kunihiro, Kiyohiko Takahashi and Muneo FukaishiNEC Corporation, Kawasaki, Kanagawa, Japan

RMO1B-3 8:40 AMA 12-bit Resolution, 200-MSample/second Phase Modulator for a 2.5GHz Carrier withDiscrete Carrier Pre-Rotation in 65nm CMOSTaylor W. Barton, SungWon Chung, Philip A. Godoy and Joel L. DawsonMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA

RMO1B-4 9:00 AMA Direct Sampling Mixer with Complex Coefficient Transfer Function in 65nm CMOS


2 of 21 6/21/2011 5:16 PM

Yohei Morishita1, Tadashi Morita1, Noriaki Saito1 and Kiyomichi Araki2

1Communication Core Devices Development Center, Panasonic Corporation, Yokohama, Japan 2GraduateSchool of Engineering, Tokyo Institute of Technology, Tokyo, Japan

RMO1B-5 9:20 AMMultiband Mixed-Signal Vector Modulator ICUwe Mayer, Michael Wickert, Ralf Eickhoff and Frank EllingerChair for Circuit Design and Network Theory, Dresden University of Technology, Dresden, Germany


Room 341-342Session RMO1C: mm-Wave Communication Systems

Chair: Luciano Boglione, SSSC/AFRLCo-Chair: Georg Boeck, Berlin Institute of Technology

RMO1C-1 8:00 AM (Invited Paper)Indoor and Outdoor Millimeter Wave Systems and RF/BB SoCsAkira Matsuzawa and Kenichi OkadaTokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo, Japan

RMO1C-2 8:20 AMA 60-GHz RF IQ DAC Transceiver with on-Die at-Speed LoopbackE. Laskin, A. Tomkins, A. Balteanu, I. Sarkas and S.P. VoinigescuECE Dept., University of Toronto, Toronto, Ontario, Canada

RMO1C-3 8:40 AMA 60GHz Digitally Controlled RF Beamforming Array in 65nm CMOS with Off-Chip Antennas1Saihua Lin, K. B. 2Ng, 2Hang Wong, 2K.M.Luk, 3S. Simon Wong and 3Ada S.Y. Poon1EE Dept, Stanford University, 2EE Dept, City University, 3EE Dept, Stanford University

RMO1C-4 9:00 AMA 60dB Gain and 4dB Noise Figure CMOS V-Band Receiver Based on Two-Dimensional PassiveGm-Enhancement

Ning-Yi Wang1, Hao Wu1, Jenny Yi-Chun Liu1, Jianhua Lu1, Hsieh-Hung Hsieh2, Po-Yi Wu2

1University of California, Los Angeles, CA (*now at Broadcom Corporation, Irvine, CA) 2TaiwanSemiconductor Manufacturing Company, Hsinchu, Taiwan, ROC

RMO1C-5 9:20 AMA 220GHz Subharmonic Receiver Front End in a SiGe HBT Technology

Erik Öjefors1, Bernd Heinemann2 and Ullrich R. Pfeiffer1

1University of Wuppertal, Germany, 2IHP GmbH, Im Technologiepark, Germany


Room 343-344Session RMO1D: Frequency Synthesis: 60GHz and Beyond


3 of 21 6/21/2011 5:16 PM

Chair: Stefano Pellerano, Intel Corp.Co-Chair: Jaber Khoja, Zoran

RMO1D-1 8:00 AMA 60GHz Wideband Injection-Locked Frequency Divider with Adaptive-Phase-EnhancingTechniqueHongrui Wang, Lei Zhang, Dongxu Yang, Dajie Zeng, Li Zhang, Yan Wang and Zhiping YuInstitute of Microelectronics, Tsinghua University, Beijing

RMO1D-2 8:20 AMA 100GHz Phase-Locked Loop in 0.13µm SiGe BiCMOS processShinwon Kang, Jun-Chau Chien and Ali M. NiknejadBerkeley Wireless Research Center, University of California at Berkeley, Berkeley, CA

RMO1D-3 8:40 AMW-Band Frequency Synthesis Using a Ka-Band PLL and Two Different Frequency TriplersZhiming Chen, Chun-Cheng Wang and Payam HeydariNanoscale Communication IC (NCIC) Lab, University of California, Irvine, CA, USA

RMO1D-4 9:00 AM60GHz CMOS Divide-by-5 Injection-Locked Frequency Divider with an Open-Stub-LoadedFloating-Source InjectorMing-Wei Li, Hsin-Chih Kuo, Tzuen-Hsi Huang and Huey-Ru ChuangInstitute of Computer and Communication Engineering, Department of Electrical Engineering NationalCheng Kung University, Taiwan, R.O.C.


Room 337-338Session RMO2A: WiMedia UWB and IR-UWB Receivers and

TransmittersChair: Domine Leenaerts, NXP Semiconductors

Co-Chair: Yann Deval, IMS Lab

RMO2A-1 10:00 AMA 65nm CMOS Low-Noise Three Band Group WiMedia UWB ReceiverWon Ko, Heeseon Shin, Sangsoo Ko, Jounghyun Yim, Byoungjoong Kang, Taewan Kim, Inhyo Ryu,Sung-Gi Yang, Jong-Dae Bae and Hojin ParkSamsung Electronics Co., Ltd, Korea

RMO2A-2 10:20 AMA WiMedia UWB Transmitter up to 9GHz in 65nm CMOS and Wafer-level Fabricated PackageJounghyun Yim, Byoungjoong Kang, Taewan Kim, Won Ko, Heeseon Shin, Sangsoo Ko, Inhyo Ryu,Sung-Gi Yang, Jong-Dae Bae and Hojin ParkSamsung Electronics Co., Ltd, Yongin, Gyeonggi-Do, Korea

RMO2A-3 10:40 AM


4 of 21 6/21/2011 5:16 PM

Low Power, Fully Differential SiGe IR-UWB Transmitter and Correlation Receiver ICsDayang Lin, Andreas Trasser and Hermann SchumacherInstitute of Electron Devices and Circuits, Ulm University

RMO2A-4 11:00 AMA 520 pJ/pulse IR-UWB Radar for Short Range Object Detection

Yuna Shim1, Sigit Yuwono1, Seung-Jin Kim1, Joo-Myoung Kim1, Seok-kyun Han1, Sang-Gug Lee1 and

Dong Sam Ha2

1Dept. of Electrical Engineering, KAIST, Daejeon, Korea, 2Center for Embedded Systems for CriticalApplications (CESCA), Bradley Department of Electrical and Computer Eng., Virginia Tech. Blacksburg,VA, USA

RMO2A-5 11:20 AMA Self-Synchronized, Crystal-Less, 86µW, Dual-Band Impulse Radio for Ad-Hoc WirelessNetworksXiao Y. Wang, Rajeev K. Dokania, Yi Zhuang, Waclaw Godycki, Carlos I. Dorta-Quinones, Michael Lyonsand Alyssa B. ApselDepartment of Electrical and Computer Engineering Cornell University, Ithaca, NY, USA


Room 339-340Session RMO2B: Cellular RF

Chair: Didier Belot, ST-MicroelectronicsCo-Chair: Marc Tiebout, Infineon Technologies

RMO2B-1 10:00 AMSingle-Chip Multi-band SAW-less LTE WCDMA and EGPRS CMOS Receiver with DiversityHaolu Xie, Patrick Rakers, Rick Fernandez, Terrie McCain, Joan Xiang, John Parkes, Jim Riches, RichardVerellen, Mahib Rahman, Elie Shimoni, Vivek Bhan, Daniel B. SchwartzFujitsu Semiconductor Wireless Products Inc., Tempe, AZ

RMO2B-2 10:20 AMAn L-Band Receiver-Frontend-Architecture using Adaptive Q-Enhancement Techniques in65nm CMOS as Enabler for Single-SAW GPS Receivers

C. Schultz1, H. Doppke1, M. Hammes1, R. Kreienkamp1, L. Lemke1 and S. van Waasen2

1Intel Mobile Communications GmbH, Duisburg, NRW, 47259, Germany 2Forschungszentrum Jülich,Jülich, NRW, 52425, Germany

RMO2B-3 10:40 AMReconfigurable Wide-band Receiver with Positive Feed-back Translational Loop

Christian Izquierdo 1, 2, Andreas Kaiser2, Franck Montaudon1, Philippe Cathelin1

1ST-Ericsson, Grenoble, France, 2IEMN - ISEN, Lille, France

RMO2B-4 11:00 AMA Digital Calibration Enhanced GSM/GPRS TransmitterPing-Ying Wang, Ching-Hsing Wang, Wei-Chi Lee, Tai-Yun YuMediaTek Inc., Taiwan


5 of 21 6/21/2011 5:16 PM

RMO2B-5 11:20 AMHigh Efficiency Envelope Tracking Power Amplifier with Very Low Quiescent Power for 20MHz LTE

Muhammad Hassan 1, 3, Myoungbo Kwak 1, 3, Vincent W. Leung 2, Chin Hsia 1, 3, Jonmei J. Yan 1, 3,

Donald F. Kimball 3, Lawrence E. Larson 1, 3 and Peter M. Asbeck 1, 3

1Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA,

USA, 2Qualcomm Inc., San Diego, CA, USA, 3California Institute for Telecommunications and InformationTechnology (CalIT2) University of California, CA, USA


Room 341-342Session RMO2C: Advanced Architecture PAs

Chair: Eddie Spears, RFMDCo-Chair: Jeffrey Walling, Rutgers University

RMO2C-1 10:00 AMA W-band Current Combined Power Amplifier with 14.8dBm Psat and 9.4% Maximum PAE in

65nm CMOS

Zhiwei Xu1, Qun Jane Gu2 and Mau-Chung Frank Chang3

1HRL Laboratories, Malibu, CA, USA, 2Univeristy of Florida, Gainesville, FL, USA, 3Univeristy ofCalifornia, Los Angeles, CA, USA

RMO2C-2 10:20 AMX-to-K band Broadband Watt-level Power Amplifier Using Stacked-FET Unit Cells

Youngrak Park1, 2, Youngmin Kim1, Wooyeol Choi1, Jungrin Woo1 and Youngwoo Kwon1

1Department of EECS and INMC, Seoul National University, Seoul, Korea, 2Electronics andTelecommunications Research Institute, Daejeon, Korea

RMO2C-3 10:40 AMWideband High Efficiency Envelope Tracking Integrated Circuit for Micro-Base Station PowerAmplifiers

Myoungbo Kwak, Donald Kimball, Calogero Presti1, Antonino Scuderi2, Carmelo Santagati2, Jonmei Yan,Peter Asbeck and Lawrence Larson1Dept. of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA,2STMicroelectronics Catania, Catania, Italia

RMO2C-4 11:00 AMA Power-Combined Switched-Capacitor Power Amplifier in 90nm CMOS

Sang-Min Yoo1, Jeffrey S. Walling2, Eum-Chan Woo1 and David J. Allstot1

1Dept. of Electrical Engineering, Univ. of Washington, Seattle, WA, 2Dept. of Electrical and ComputerEngineering, Rutgers Univ., Piscataway, NJ

RMO2C-5 11:20 AMA 1.8GHz Wide-Band Stacked-Cascode CMOS Power Amplifier for WCDMA Applications in65nm Standard CMOS

Stephan Leuschner1, Jan-Erik Mueller2, Heinrich Klar1

1Technical University of Berlin, 2Intel Mobile Communications


6 of 21 6/21/2011 5:16 PM


Room 343-344Session RMO2D: Emerging RFIC Device Technologies

Chair: Aditya Gupta, Northrop GrummanCo-Chair: Eli Reese, Triquint

RMO2D-1 10:00 AMNon-invasive Monitoring of CMOS Power Amplifiers Operating at RF and mmW Frequenciesusing an On-chip Thermal Sensor

José Luis González1, Baudouin Martineau2, Diego Mateo1 and Josep Altet1

1Universitat Politècnica de Catalunya (Barcelona Tech), Barcelona, Spain, 2STMicroelectronics, Crolles,France

RMO2D-2 10:20 AMHigh-Power Digital Controlled Artificial Dielectric GaN Reconfigurable Transmission Lines forDigitally Assisted RFICsMonte Watanabe and Tim LaRoccaNorthrop Grumman Aerospace Systems, Redondo Beach, CA, USA

RMO2D-3 10:40 AMA New Method to Achieve RF Linearity in SOI Nanowire MOSFETs

Ali Razavieh1, Navab Singh2, Abhijeet Paul1, Gerhard Klimeck1, David Janes1, Joerg Appenzeller1

1Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA, 2Institute of Microelectronics,A*STAR (Agency for Science, Technology and Research), Singapore

RMO2D-4 11:00 AMNano Crossbar Electrostatic Discharge Protection Design

Jian Liu1, Lijie Zhang2, Xin Wang1, Lin Lin1, 3, Zitao Shi1, 2, Albert Wang1, Ru Huang2, Gary Zhang4

1Dept. of Electrical Engr., University of California, Riverside, CA 92521, USA, 2Peking University, China,3IBM, USA, 4Skyworks Solutions, Inc., USA

RMO2D-5 11:20 AMAn All Graphene Radio Frequency Low Noise AmplifierSaptarshi Das and Joerg AppenzellerDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA

Monday, 6 June 20112:20 PM

Room 337-338Session RMO3A: Low Power Wireless Sensor Techniques

Chair: Glenn Chang, MaxLinearCo-Chair: Ali Afsahi, Broadcom

RMO3A-1 2:20 PMA 30MHz-2.4GHz CMOS Receiver with Integrated RF Filter and Dynamic-range-scalable


7 of 21 6/21/2011 5:16 PM

Energy Detector for Cognitive Radio

Masaki Kitsunezuka1, Hiroshi Kodama1, Naoki Oshima1, Kazuaki Kunihiro1, Tadashi Maeda2 and Muneo

Fukaishi1

1NEC Corporation, Kanagawa, Japan, 2Renesas Electronics Corporation, Kanagawa, Japan

RMO3A-2 2:40 PMA 1900MHz-Band GSM-Based Clock-Harvesting Receiver with -87dBm SensitivityJonathan K. Brown and David D. WentzloffUniversity of Michigan, Ann Arbor, MI

RMO3A-3 3:00 PMA CMOS Spectrum Sensor Using Injection Locking of Two Voltage-Controlled Oscillators forCognitive Radio System

Fu-Kang Wang1, Chi-Tsan Chen1, Jiun-Ru Tsai1, Tzyy-Sheng Horng1, Kang-Chun Peng2

1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, 2Departmentof Computer and Communication Engineering, National Kaohsiung First University of Science andTechnology, Kaohsiung, Taiwan

RMO3A-4 3:20 PMA Wirelessly-Powered Passive RF CMOS Transponder with Dynamic Energy Storage andSensitivity EnhancementZahra Safarian and Hossein HashemiElectrical Engineering-Electrophysics, University of Southern California, Los Angeles, CA, USA


Room 339-340Session RMO3B: Low Power LNA Design Techniques

Chair: Danilo Manstretta, University of PaviaCo-Chair: Jean-Baptiste Begueret, University of Bordeaux

RMO3B-1 2:20 PMA 60µW LNA for 2.4 GHz Wireless Sensors Network ApplicationsT. Taris, JB. Begueret, Y. DevalIMS lab, University of Bordeaux, Talence, France

RMO3B-2 2:40 PMA 1.5V, 140µA CMOS Ultra-Low Power Common-Gate LNA

C. J. Jeong1, W. Qu2, Y. Sun1, D. Y. Yoon1, S. K. Han1 and S. G. Lee1

1Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Korea,2Silicon Works Company Ltd., Korea

RMO3B-3 3:00 PMEffects of the Nonlinearity of the Common-Gate Stage on the Linearity of CMOS Cascode LowNoise Amplifier

Chenglin Cui1, Tae-Sung Kim1, Seong-Kyun Kim1, Jun-Kyung Cho2, Su-Tae Kim3 and Byung-Sung1Sungkyunkwan University, Suwon, South Korea, 2Eltronix Co., Inc., Seoul, South Korea, 3Dongbu HiTekCo., Ltd., Eunseung, South Korea


8 of 21 6/21/2011 5:16 PM

RMO3B-4 3:20 PMA 1.3mW 20dB Gain Low Power Inductorless LNA with 4dB Noise Figure for 2.45GHz ISMBand

François Belmas1, Frédéric Hameau1, Jean-Michel Fournier2

1CEA LETI F38054 Grenoble FRANCE, 2IMEP-LHAC, BP 1. CEA LETI F38054 Grenoble FRANCE, 2.IMEP-LHAC, BP


Room 341-342Session RMO3C: Devices and circuits for silicon based

mm-Wave ICsChair: Oren Eliezer, Xtendwave

Co-Chair: Li-Wu Yang, Shanghai Jiao-Tong University

RMO3C-1 2:20 PM60GHz Antenna Integrated on High Resistivity Silicon Technologies Targeting WHDMIApplications

D. Titz1, R. Pilard2, F. Ferrero1, F. Gianesello2, D. Gloria2, C. Luxey1, P. Brachat3 and G. Jacquemod1

1LEAT, Université de Nice-Sophia-Antipolis, France, 2STMicroelectronics, Technology R&D, France,3CREMANT, Orange Labs, France

RMO3C-2 2:40 PMA High-Isolation 60GHz CMOS Transmit/Receive Switch

Chi-Shin Kuo1, Hsin-Chih Kuo1, Huey-Ru Chuang1, Chu-Yu Chen2 and Tzuen-Hsi Huang1

1Institute of Computer and Communication Engineering, Department of Electrical Engineering, National

Cheng Kung University, Tainan, Taiwan, 2Department of Electronic Engineering, National University ofTainan, Tainan, Taiwan

RMO3C-3 3:00 PMIntegration of Antenna-on-Chip and Signal Detectors for Applications from RF to THzFrequency Range in SiGe Technology

Sidina Wane1, Rob van Heijster2 and Serge Bardy1

1NXP-Semiconductors, Esplanade Anton Philips 14906, Colombelles Caen - France, 2TNO Defence,Security and Safety, The Hague, The Netherlands

RMO3C-4 3:20 PMOn-Chip Vertically Coiled Solenoid Inductors and Transformers for RF SoC Using 90nm CMOSInterconnect TechnologyHiroaki Namba, Takasuke Hashimoto and Masayuki FurumiyaDevice Framework Development Department, Renesas Electronics Corporation, Japan


Room 343-344Session RMO3D: mm-Wave VCOs


9 of 21 6/21/2011 5:16 PM

Chair: Timothy Hancock, MIT Lincoln LaboratoryCo-Chair: Fred Lee, SiTime

RMO3D-1 2:20 PMA V-band Voltage Controlled Oscillator with Greater than 18GHz of Continuous Tuning-RangeBased on Orthogonal E mode and H mode ControlAlborz Jooyaie, M. C. Frank ChangUniversity of California, Los Angeles, CA

RMO3D-2 2:40 PM118GHz fundamental VCO with 7.8% tuning range in 65nm CMOSWouter Volkaerts, Michiel Steyaert and Patrick ReynaertESAT/MICAS, Katholieke Universiteit Leuven, Belgium

RMO3D-3 3:00 PMFully Monolithic 18.7GHz 16ps GaAs Mode-Locked OscillatorsO. Ozgur Yildirim, Dongwan Ha and Donhee HamHarvard University, Cambridge, MA

RMO3D-4 3:20 PMA 77GHz CMOS VCO with 11.3GHz Tuning Range, 6dBm Output Power, and Competitive PhaseNoise in 65nm Bulk CMOSVishal P. Trivedi, Kun-Hin To and W.Margaret HuangFreescale Semiconductor Inc., Tempe, AZ, USA


Room 337-338Session RMO4A: RF characterization and modeling of

advanced CMOSChair: Bumman Kim, Pohang University of Science and Technology

Co-Chair: Tzung-Yin Lee, Skyworks Solutions

RMO4A-1 4:00 PMAging of 40nm MOSFET RF Parameters under RF conditions From Characterization to CompactModeling for RF Design

Laurent Negre1,2, David Roy1, Florian Cacho1, Patrick Scheer1, Samuel Boret1, Alban Zaka1, Daniel1STMicroelectronics, Crolles, France, 2IMEP-LAHC, Grenoble, France

RMO4A-2 4:20 PMSmall signal and HF Noise performance of 45 nm CMOS technology in mmW range

L. Poulain1,2, N. Waldhoff1, D. Gloria2, F. Danneville1, G. Dambrine1

1Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Villeneuve d'Ascq Cedex,

France, 2STMicroelectronics, France.

RMO4A-3 4:40 PMAnalytical Model for RF Power Performance of Deeply Scaled CMOS Devices


10 of 21 6/21/2011 5:16 PM

Usha Gogineni1, Jesús del Alamo1 and Alberto Valdes-Garcia2

1Massachusetts Institute of Technology, Cambridge, MA, 2IBM T.J. Watson Research Center

RMO4A-4 5:00 PMCMOS Digital Tunable Capacitance with tuning ratio up to 13 and 10dBm linearity for RF andMillimeterwave Design

Romain Debroucke1,2, Alexandre Pottrain1,2, Diane Titz3, Frederic Gianesello1, Daniel Gloria1 Cyril1STMicroelectronics, T R&D, TPS Lab., France, 2IEMN, University of Lille, France


Room 339-340Session RMO4B: Integrated Front-End RFIC - LNA, Mixers,

FiltersChair: Frank Henkel, IMST GmbH

Co-Chair: Reynold Kagiwada, Northrop Grumman

RMO4B-1 4:00 PM280-MHz CMOS Intra-symbol Intermittent RF Front End for Adaptive Power Reduction ofWireless ReceiversMitsuo Nakamura, Mamoru Ugajin and Mitsuru HaradaNTT Microsystem Integration Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, Japan

RMO4B-2 4:20 PMA 7dB NF 60GHz-Band Millimeter-Wave Transconductance MixerYanyu Jin, John R. Long and Marco SpiritoERL/DIMES, Delft University of Technology, The Netherlands

RMO4B-3 4:40 PMA 100-3000MHz, Up/Down-Convert, +29dBm IIP3, 13dB NF, Active Mixer with IntegratedFractional-N PLL and VCO

Iliana Fujimori-Chen1, Benjamin Walker2, Roxann Broughton-Blanchard2 and Ed Balboni2

1Analog Devices, Inc., Somerset, NJ, 2Analog Devices, Inc., Wilmington, MA

RMO4B-4 5:00 PMA 1 to 5GHz Adjustable Active Polyphase Filter for LO Quadrature GenerationMikko Kaltiokallio and Jussi RyynnenSMARAD CoE/Department of Micro and Nanosciences, Aalto University, Espoo, Finland


Room 341-342Session RMO4C: High performance CMOS Power Amplifiers

Chair: Jyoti P. Mondal, Northrop GrummanCo-Chair: Leon van den Oever, Radio Semiconductor Corp.


11 of 21 6/21/2011 5:16 PM

RMO4C-1 4:00 PMA 550-1050MHz +30dBm Class-E Power Amplifier in 65nm CMOS

Ronghui Zhang1, Mustafa Acar2, Mark P. van der Heijden2, Melina Apostolidou2

1Delft University of Technology, Delft, the Netherlands, 2NXP Semiconductors, Eindhoven, theNetherlands, 3Eindhoven University of Technology, Eindhoven, the Netherlands

RMO4C-2 4:20 PMDigital Polar Transmitter Using a Watt-Class Current-Mode Class-D CMOS Power Amplifier

Toshifumi Nakatani1,2, Jeremy Rode3, Donald F. Kimball1,4, Lawrence E. Larson1 and Peter M. Asbeck1

1ECE Department, University California of San Diego, La Jolla, CA, USA,2PWRL, Panasonic Corporation of

North America, Cupertino, CA, USA, 3ZIVA Corporation, San Diego, CA, USA, 4MaXentric Technologies,LLC, San Diego, CA

RMO4C-3 4:40 PMA Fully-Integrated K-band CMOS Power Amplifier with Psat of 23.8 dBm and PAE of 25.1 %

Yoichi Kawano, Akiko Mineyama, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo JoshinFujitsu Ltd., Atsugi, Kanagawa, Japan

RMO4C-4 5:00 PMA Fully-Integrated Efficient CMOS Inverse Class-D Power Amplifier for Digital PolarTransmittersDebopriyo Chowdhury, Siva V Thyagarajan, Lu Ye, Elad Alon and Ali M. NiknejadBerkeley Wireless Research Center, Dept. of EECS, UC Berkeley, Berkeley, CA, USA


Room 343-344Session RMO4D: Frequency Synthesis: Mixed Signal

TechniquesChair: Bertan Bakkaloglu, Arizona State University

Co-Chair: Chun-Ming Hsu, IBM

RMO4D-1 4:00 PMA Phase-Adjustable Delay-Locked Loop Utilizing Embedded Phase InterpolationSteven Callender, Ali M. NiknejadBerkeley Wireless Research Center, University of California at Berkeley, Berkeley, CA, USA

RMO4D-2 4:20 PMDynamic Bandwidth Adjustment of an RF All-Digital PLL

R. Bogdan Staszewski1, Imran Bashir2 and Khurram Waheed3

1Technische Universiteit Delft, The Netherlands, 2University of Texas at Dallas, Richardson, TX, USA,3Freescale Semiconductor, Austin, TX, USA

RMO4D-3 4:40 PMProcess compensated low power LO divider chain with asynchronous odd integer 50% dutycycle CML dividersEdward P. Coleman, Sudipto Chakraborty, Walter Budziak, Ted Blank and Per T. Roine


12 of 21 6/21/2011 5:16 PM

Texas Instruments Incorporated, Dallas, TX, USA

RMO4D-4 5:00 PMA CMOS Auto-Calibrated I/Q Generator for Sub-GHz Ultra Low-Power TransceiversCalogero M. Ippolito, Alessandro Italia* and Giuseppe PalmisanoUniversità di Catania, Facoltà di Ingegneria, DIEES, Catania, Italy.

Tuesday, 7 June 20118:00 AM

Room 337-338Session RTU1A: mm-Wave modeling of parasitics and

passivesChair: Kevin McCarthy, University College Cork

Co-Chair: Francis Rotella, Peregrine Semiconductor

RTU1A-1 8:00 AMA Layout Technique for Millimeter-Wave PA TransistorsChuanKang Liang and Behzad RazaviUniversity of California, Los Angeles, CA

RTU1A-2 8:20 AMMillimeter-Wave Modeling of Isolated MOS Substrate Network through Gate-BulkMeasurements

B. Dormieu1, 2, C. Charbuillet1, F. Danneville2, N. Kauffmann1, P. Scheer1

1STMicroelectronics, Crolles, 2IEMN, avenue Henri Poincaré, Villeneuve d

RTU1A-3 8:40 AMA Unified Model for On-chip CPWs with Various Types of Ground ShieldsHongrui Wang, Dajie Zeng*, Dongxu Yang, Li Zhang, Lei Zhang, Yan Wang, He Qian and Zhiping YuInstitute of Microelectronics, Tsinghua University, Beijing, China, *Sinano, Chinese Academy of Sciences,Suzhou, China


Room 339-340Session RTU1B: Broadband and Low-Noise Amplifiers

Chair: Madhukar Reddy, MaxLinearCo-Chair: Eric Klumperink, University of Twente

RTU1B-1 8:00 AMA CMOS Distributed Amplifier with Active Input Balun Using GBW and Linearity EnhancingTechniquesAmin Jahanian and Payam HeydariUniversity of California, Irvine CA, USA


13 of 21 6/21/2011 5:16 PM

RTU1B-2 8:20 AM60GHz High-Gain Low-Noise Amplifiers with a Common-Gate Inductive Feedback in 65nmCMOS

Hsieh-Hung Hsieh1, Po-Yi Wu1, Chewn-Pu Jou1, Fu-Lung Hsueh1 and Guo-Wei Huang2

1Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan,2National Nano Device Laboratories, Hsinchu, Taiwan

RTU1B-3 8:40 AM1.9~2.6GHz Tuning Range Variable Gain Low-Noise Amplifier with Digital Assisted AutomaticTuning LoopXiao Wang, Chuansheng Dong, Shengguo Cao, Na Yan, Xi Tan and Hao MinState Key Laboratory of ASIC & System, Fudan University, ShangHai, China

RTU1B-4 9:00 AMWideband Common-Gate Low-Noise Amplifier with Dual-Feedback for Simultaneous Inputand Noise Matching

Rong-Fu Ye1, Tzyy-Sheng Horng1 and Jian-Ming Wu2

1Dept. of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, 2Dept. ofElectronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan


Room 341-342Session RTU1C: mm-Wave Imagers

Chair: Paul Blount, Custom MMIC Design Services Inc.Co-Chair: Brian Floyd, North Carolina State University

RTU1C-1 8:00 AMA Fully Integrated 96GHz 2×2 Focal-Plane Array with On-Chip AntennaChun-Cheng Wang, Zhiming Chen, Hsin-Cheng Yao and Payam HeydariNanoscale Communication IC (NCIC) Lab, University of California, Irvine, CA

RTU1C-2 8:20 AMA CMOS Fully Differential W-Band Passive Imager with <2 K NETD

Qun Jane Gu1, Zhiwei Xu2, Heng-Yu Jian3, Mau-Chung Frank Chang3

1University of Florida, Gainesville, FL, USA, 2HRL Laboratories, Malibu, CA, USA, 3University ofCalifornia, Los Angeles, Los Angeles, CA, USA

RTU1C-3 8:40 AMLens-Integrated THz Imaging Arrays in 65nm CMOS Technologies

H. Sherry2, R. Al Hadi1, J. Grzyb1, E. Oejefors1, A. Cathelin2, A. Kaiser3, U. R. Pfeiffer1

1University of Wuppertal, Wuppertal, Germany, 2STMicroelectronics, Crolles, France, 3ISEN, Lille, France

RTU1C-4 9:00 AMLow Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe BipolarTechnology

M. Tiebout1, H.-D.Wohlmuth2, H. Knapp 2, R. Salerno1, M. Druml1

1INFINEON Technologies, Villach, Austria, 2INFINEON Technologies, Munich, Germany, 3Rohde &


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Schwarz, Munich, Germany

RTU1C-5 9:20 AMA 90GHz Pulsed-Transmitter with Near-Field/Far-Field Energy Cancellation using a Dual-LoopAntennaAmin Arbabian, Shinwon Kang, Steven Callender, Bagher Afshar, Jun-Chau Chien and Ali NiknejadDepartment of Electrical Engineering and Computer Sciences, UC Berkeley, Berkeley, CA, USA


Room 337-338Session RTU2A: Wideband Receivers and Building Blocks

Chair: Eric Fogleman, MaxLinearCo-Chair: Pierre Busson, STMicroelectronics

RTU2A-1 10:00 AMA Broadband Self-Healing Phase Synthesis Scheme

Hua Wang1,2, Kaushik Dasgupta2 and Ali Hajimiri2

1Intel Corporation, Hillsboro, Oregon, USA, 2California Institute of Technology, Pasadena, California,USA

RTU2A-2 10:20 AMDouble Quadrature Harmonic Rejection Architecture Insensitive to Gain and Phase Mismatchfor Analog/Digital TV Tuner ICJaeyoung Ryu, Seungwoo Cho, Jeongsu Lee, Jongjin Kim, Yeonwoo Ku, Kuduck Kwon, Hyunkoo KangDMC R&D Center, Samsung Electronics, Suwon, Gyeonggi-Do, Korea

RTU2A-3 10:40 AMA Dual-band Digital TV Tuner for CMMB application SoCHuijung Kim, Sanghoon Kang, Jeong-Hyun Choi, Taewan Kim, BongDae Lee, Jong-Dae Bae, WooseungChoo, Hojin Park and Byeong-ha ParkSamsung Electronics Co. Ltd., Yongin-City, Korea

RTU2A-4 11:00 AMA 130nm CMOS 100Hz-60GHz Reconfigurable Vector Signal Analyzer and Software-DefinedReceiver

Ankush Goel1,2, Behnam Analui1, Hossein Hashemi1

1University of Southern California, 2MediaTek, USA Inc.

RTU2A-5 11:20 AMSub-THz Beam-forming using Near-field Coupling of Distributed Active Radiator ArraysKaushik Sengupta and Ali HajimiriDept. of Electrical Engineering, California Institute of Technology, Pasadena, CA, USA


Room 339-340


15 of 21 6/21/2011 5:16 PM

Session RTU2B: Wide Tuning Range OscillatorsChair: Waleed Khalil, Ohio State University

Co-Chair: Nobuyuki Itoh, Okayama Prefectural University

RTU2B-1 10:00 AMA 5.6GHz to 11.5GHz DCO for digital dual loop CDRsWard S. Titus and John G. KenneyAnalog Devices, Somerset, NJ

RTU2B-2 10:20 AMA 3.16 - 12.8GHz Low Phase Noise N-Push/M-Push Cyclic Coupled Ring OscillatorMohammed M. Abdul-Latif and Edgar Sánchez-SinencioTexas A&M University, College Station, TX, USA

RTU2B-3 10:40 AMA 11.5-22GHz Dual-Resonance Transformer-coupled Quadrature VCOShadi Saberi, Jeyanandh ParameshElectrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh PA

RTU2B-4 11:00 AMA 25MHz-6.44GHz LC-VCO Using a 5-port Inductor for Multiband Frequency GenerationWei Deng, Kenichi Okada and Akira MatsuzawaDepartment of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan

RTU2B-5 11:20 AMA Single-LC-Tank 5-10 GHz Quadrature Local Oscillator for Cognitive Radio ApplicationsJianhua Lu, Ning-Yi Wang and Mau-Chung Frank ChangUniversity of California, Los Angeles, California, USA


Room 341-342Session RTU2C: mm-Wave Power Amplifiers

Chair: Freek van Straten, NXP SemiconductorsCo-Chair: Joseph Staudinger, Freescale Semiconductor

RTU2C-1 10:00 AMA V-band Self-Healing Power Amplifier with Adaptive Feedback Bias Control in 65 nm CMOS

Jenny Yi-Chun Liu1, Adrian Tang1, Ning-Yi Wang1, Qun Jane Gu2, Roc Berenguer3, Hsieh-Hung Hsieh4,

Po-Yi Wu4, Chewnpu Jou4 and Mau-Chung Frank Chang1

1University of California, Los Angeles, CA 2University of Florida, Gainesville, FL 3University of Navarra,

Spain 4Taiwan Semiconductor Manufacturing Company, Taiwan

RTU2C-2 10:20 AMA Fully Integrated 60GHz Distributed Transformer Power Amplifier in Bulky CMOS 45nmJaap Essing, Reza Mahmoudi, Yu Pei, Arthur van RoermundMixed-signal Microelectronics, Eindhoven University of Technology, Eindhoven, The Netherlands


16 of 21 6/21/2011 5:16 PM

RTU2C-3 10:40 AM94GHz Differential Power Amplifier in 45nm LP CMOS

Noël Deferm1, Juan F. Osorio2, Anton de Graauw2 and Patrick Reynaert1

1K.U.Leuven ESAT-MICAS, Leuven, Belgium; 2NXP Semiconductors, Eindhoven, The Netherlands

RTU2C-4 11:00 AMA 55-67GHz Power Amplifier with 13.6% PAE in 65 nm standard CMOSTong Wang, Toshiya Mitomo, Naoko Ono and Osamu WatanabeToshiba Corporation, Saiwai-ku, Kawasaki, Japan

RTU2C-5 11:20 AMA 60GHz-band 20dBm Power Amplifier with 20% Peak PAEYi Zhao, John R. Long, Marco SpiritoERL/DIMES, Delft University of Technology, The Netherlands

Tuesday, 7 June 201112:00 PM

Room Hall ASession RTUIF: Interactive ForumChair: Jeffrey Walling, Rutgers University

Co-Chair: Haolu Xie, Fujitsu

RTUIF-1 12:00 PMA 144 GHz 2.5mW Multi-Stage Regenerative Receiver for mm-Wave Imaging in 65nm CMOS

Adrian Tang1, Zhiwei Xu2, Qun Jane Gu3, Yi-Cheng Wu4 and Mau Chung Frank Chang1

1University of California, Los Angeles, Los Angeles, United States, 2HRL Laboratories, LLC., Malibu,

United States, 3University of Florida, Gainesville, United States, 4Northtrop Grumman Co

RTUIF-2 12:00 PMA 9.5mW Analog Baseband RX Section for 60GHz Communications in 90nm CMOS

S. D Amico1, A. Spagnolo1, A. Donno1, P. Wambacq3,4, A. Baschirotto1,2

1University of Salento, Lecce, Italy, 2IMEC, Leuven, Belgium, 3Vrije Universiteit Brussel, Brussel,

Belgium, 4University of Milano-Bicocca, Milan, Italy

RTUIF-3 12:00 PMA Direct Conversion Quadrature Transmitter with Digital Interface in 45 nm CMOS forHigh-Speed 60 GHz Communications

Morteza Abbasi1, Torgil Kjellberg1, Anton de Graauw2, Raf Roovers2 and Herbert Zirath1

1Microwave Electronics Laboratory, Chalmers University of Technology, Göteborg, Sweden, 2NXPSemiconductors, Research, Eindhoven, The Netherlands

RTUIF-4 12:00 PM94GHz Power-Combining Power Amplifier with +13dBm Saturated Output Power in 65nmCMOS

Dan Sandström1, Baudouin Martineau2, Mikko Varonen1, Mikko Kärkkäinen1, Andreia Cathelin2 and Kari

A. I. Halonen1

1Aalto University, Department of Micro and Nanosciences/SMARAD-2, Espoo, Finland,2STMicroelectronics, Crolles, France


17 of 21 6/21/2011 5:16 PM

RTUIF-5 12:00 PMTemperature-Dependent Scalable Large Signal CMOS Device Model Developed forMillimeter-Wave Power Amplifier DesignNavin Mallavarpu, Debasis Dawn and Joy Laskar*Georgia Electronic Design Center (GEDC), School of Electrical and Computer Engineering, GeorgiaInstitute of Technology, Atlanta, GA, USA, *on leave

RTUIF-6 12:00 PMA Transceiver Chipset for Automotive LRR and SRR Systems in the 76-77 and 77-81GHzBands in SiGe BiCMOS Technology

S. Trotta1, H. Li1, B. Dehlink1, A. Ghazinour1, Y. Yin1, R. Reuter1, S. Majied1 and J. John2

1Freescale Semiconductor, Munich, Germany, 2Freescale Semiconductor, Inc., Tempe, AZ, USA

RTUIF-7 12:00 PMA Compact-Size Dual-band (Tri-mode) Receiver Front-end with Switched Harmonic Mixer andTechnology Scaling

Hsien-Ku Chen1, Kuan-Ting Lin1, Tao Wang2, Shey-Shi Lu1

1Graduate Institute of Electronics Engineering, National Taiwan University 2Department of ElectronicEngineering, Chang Gung University, Taiwan

RTUIF-8 12:00 PMAn 8GHz, 0.45dB NF CMOS LNA Employing Noise SqueezingWooram Lee and Ehsan AfshariThe School of Electrical and Computer Engineering, Cornell University, Ithaca, NY

RTUIF-9 12:00 PMA Large-Signal Blocker Robust Transimpedance Amplifier for Coexisting Radio Receivers in45nm CMOS

Alfredo Pérez-Carrillo1, Stewart S. Taylor2, Jose Silva-Martinez1 and Aydin İKarşılayan1

1Electrical and Computer Engr. Dept., Texas A&M University, College Station, Texas, USA, 2RadioIntegration Research Labs, Intel, Hillsboro, Oregon, USA

RTUIF-10 12:00 PMUltra-Low Power FSK Wake-up Receiver Front-End for Body Area Networks

M. Lont1, D. Milosevic1, A.H.M. van Roermund1 and G. Dolmans2

1Eindhoven University of Technology Mixed-signal Microelectronics, The Netherlands, 2Holst Centre,IMEC-NL, The Netherlands

RTUIF-11 12:00 PMLow-Voltage Low-Power Combined LNA-Single Gate Mixer for 5GHz Wireless Systems

M. A. Abdelghany1, R. K. Pokharel2, H. Kanaya1 and K. Yoshida1

1Graduate School of Information Science and Electrical Engineering, Kyushu University, Japan, 2E-JUSTCenter, Kyushu University, Japan

RTUIF-12 12:00 PMA 1.2V 0.1-3GHz Software-Defined Radio Receiver Front-End in 130nm CMOSMeng Cao, Baoyong Chi, Chun Zhang and Zhihua WangInstitute of Microelectronics, Tsinghua University, Beijing, China

RTUIF-13 12:00 PM


18 of 21 6/21/2011 5:16 PM

A Low Noise Amplifier Simultaneously Achieving Input Impedance and Minimum NoiseMatchingBum-Kyum Kim, Donggu Im, Jaeyoung Choi, Kwyro LeeDepartment of EE, Korea Advanced Institute of Science and Technology, Korea

RTUIF-14 12:00 PMDifferential Source-Pull on the WCDMA ReceiverClaire Guan, Chris LiuBroadcom, Irvine, CA

RTUIF-15 12:00 PMA 50% Duty Cycle Wide-Locking Range Divide-By-3 Divider up to 6GHzChunyuan Zhou, Lei Zhang, Member, IEEE, Li Zhang, Yan Wang, Zhiping Yu, He QianInstitute of Microelectronics, Tsinghua University, Beijing, China

RTUIF-16 12:00 PMA Multi-GHz 130ppm Accuracy FLL for Duty-Cycled SystemsX. Wang, B. Busze, J. Romme, R. M. Vinella, C. Zhou, K. Philips and H. De GrootHolst Center-IMEC, Eindhoven, the Netherlands

RTUIF-17 12:00 PMClosed-Loop Spurious Tone Reduction for Self-Healing Frequency SynthesizersFlorian Bohn, Kaushik Dasgupta and Ali HajimiriCalifornia Institute of Technology, Pasadena, CA

RTUIF-18 12:00 PMA Triple Band Travelling Wave VCO Using Digitally Controlled Artificial DielectricTransmission LinesNadav Buadana and Eran SocherSchool of Electrical Engineering, University of Tel-Aviv, Tel Aviv, Israel

RTUIF-19 12:00 PMA Spur-Frequency-Boosting PLL with a -74dBc Reference-Spur Rejection in 90nm DigitalCMOSMohamed Elsayed, Mohammed Abdul-Latif and Edgar Sánchez-SinencioAnalog and Mixed Signal Center, Texas A&M University, College Station, TX, USA

RTUIF-20 12:00 PMA Simple, Unified Phase Noise Model for Injection-Locked Oscillators

Sachin Kalia1, Mohammad Elbadry1, Bodhisatwa Sadhu1, Satwik Patnaik1,2, Joe Qiu3 and Ramesh

Harjani1

1Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA,2Mobile Wireless Group, Intel Corporation, Portland, OR, USA, 3Army Research Laboratory, Adelphi, MD,USA

RTUIF-21 12:00 PMA 22 μW, 2.0GHz FBAR Oscillator

Andrew Nelson1, Julie Hu1, Jyrki Kaitilay2, Richard Ruby2, Brian Otis1

1Department of Electrical Engineering, University of Washington, Seattle, WA, USA, 2AvagoTechnologies, Inc., San Jose, CA, USA


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RTUIF-22 12:00 PMDigitally Controlled Oscillator in a 65nm GSM/EDGE Transceiver with Built-in Compensationfor Capacitor Mismatches

Oren Eliezer1, Bogdan Staszewski2 and Sudheer Vemulapalli3

1Xtendwave, Dallas, Texas, USA, 2Delft University of Technology, Delft, The Netherlands, 3TexasInstruments Inc., Dallas, Texas, USA

RTUIF-23 12:00 PMA 1Mb/s 3.2-4.4GHz Reconfigurable FM-UWB Transmitter in 0.18µm CMOSBo Zhou, Hang Lv, Min Wang, Jinghui Liu, Woogeun Rhee, Yongming Li, Dongwook Kim* and ZhihuaWangInstitute of Microelectronics, Tsinghua University, Beijing, China, *Samsung Advanced Institute ofTechnology, Suwon, Republic of Korea

RTUIF-24 12:00 PMA 23 μA RF-Powered Transmitter for Biomedical ApplicationsFan Zhang, Matthew A. Stoneback and Brian P. OtisDepartment of Electrical Engineering, University of Washington, Seattle, WA

RTUIF-25 12:00 PMHighly-Linear FM Transmitter for Mobile Applications in 65nm CMOS

Brain P Ginsburg1, Krishnasawamy Nagaraj1, Neeraj Nayak1, Mehmet Ozgun3, Karthik Subburaj2, Sriram

Murali2, Francisco Ledesma1

1Texas Instruments, Dallas, TX, 2Texas Instruments, Bagalore, India, 3Istanbul University, Turkey

RTUIF-26 12:00 PMA Class-C Power Amplifier/Antenna Interface for Wireless Sensor Applications

Karthik Natarajan1, Jeffrey S. Walling2 and David J. Allstot1

1Dept. of Electrical Engineering, Univ. of Washington, Seattle, WA, USA, 2Dept. of Electrical andComputer Engineering, Rutgers Univ., Piscataway, NJ, USA

RTUIF-27 12:00 PMA 19 dBm 0.13µm CMOS Parallel Class-E Switching PA with Minimal Efficiency Degradationunder 6 dB Back-offNitesh Singhal, Nitin Nidhi, Abhishek Ghosh and Sudhkar PamartiHenry Samueli School of Engineering, University of California Los Angeles, Los Angeles, California, USA

RTUIF-28 12:00 PMLarge-Signal Characterization and Modeling of MOSFET for PA ApplicationsSunyoung Lee and Tzung-Yin LeeSkyworks Solutions, Inc., Irvine, CA

RTUIF-29 12:00 PMTowards Cognitive Built-in-Self-Test (BIST) for Reconfigurable On-Chip Applications, andContact-less MeasurementSidina Wane, Manohiaina Ranaivoniarivo, Bilal Elkassir, Christophe Kelma and Patrice GamandNXP-Semiconductors, Esplanade Anton Philips, Colombelles Caen - France

RTUIF-30 12:00 PMAn Active Filter Achieving 43.6dBm OIP3


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Helen Kim, Merlin Green, Benjamin Miller, Andrew Bolstad and Dan SantiagoMIT Lincoln Laboratory, Lexington, MA, USA

RTUIF-31 12:00 PMA 3.5-4.5-GHz Ultra-compact 0.25mm2 Reflection-type 360o Phase Shifter

Wei-Tsung Li1, Jeng-Han Tsai2, Min Huang1 and Tian-Wei Huang1

1Dept. of Electrical Engineering and Graduate Institute of Communication Engineering National Taiwan

University, Taipei, Taiwan, 2Dept. of Applied Electronics Technology National Taiwan Normal University,Taipei, Taiwan


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Documents

watson research

national sun

locked frequency

zhiping yu

65nm cmos

frequency

band receiver

power amplifier