01071000098

7/29/2019 01071000098

1/8

T H I R D E D I T I O

7/29/2019 01071000098

2/8

Physics ofSemiconductor DevicesThird Edition

S. M . SzeNational Chiao Tung U niversityHsinchu, TaiwanandStanford UniversityStanford, California

Kwok K. NgSemiconductor Research CorporationDurham, North Carolina

IX ^IN TER SC IEN C EA JOHN WILEY & SONS, INC., PUBLICATION

7/29/2019 01071000098

3/8

Description of co\erphotographA scanning electron micrograph of an arr3y of the floating-gate nonvolatile semiconductor memory(NVSM) magnified 100.000 times. NVSM was invented at Bell Telephone Laboratories in 1967. Thereare more NVSM cells produced annually in the world than any other semiconductor device and, for thatmatter, any other hum an-ma de item. For a discussion of this device, see Chapter 6 Photo courtesy ofMacronix International Company. Hsinchu. Taiwan. ROC

Copynght C 2007 by John Wiiey & Sons, Inc. All nghts reserved.Published by John Wiley & Sons, Inc.. Hoboken. New Jersey.Published simultaneously in CanadaNo part of this publication may be reproduced, stored in a retrieval system, or transmitted in any formor by any means, electronic, mechanical, photocopying, recording, scanning, or otherwise, except aspermitted under Section 107 or 108 of the 1976 United States Copynght Act, without either the priorwritten permission of the Publisher, or authorization through payment of the appropnate per-copy fee tothe Copynght Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, (978) 750-8400. fax(978) 750-44 70. or on the web at www.copynght.com. Requests to the Publisher for permission shouldbe addressed to the Perm issions Department, John W iley & Sons. Inc.. 111 River Street, Hoboken, NJ07030, (201) 748-6011. fax (201) 748-6008. or online at http: .w"wu-.wiley.com/go/permission. Limit of Liability "Disclaimer of Warranty: While the publisher and author have used their best efforts inprepanng this book, they make no representations or warranties with respect to the accuracy orcompleteness of the contents of this book and specifically disclaim any implied warranties ofmerchantability or fitness for a particular purpose. No warranty may be created or extended by salesrepresentatives or wn tten sales matenals. The advice and strategies contained herein may not besuitable for your situation. You should consult with a professional w here appro pnate Neither thepublisher nor author shall be liable for any loss of profit or any other commercial damages, includingbut not limited to special, incidental, consequential, or other damages.For general information on our other products and services or for technical support, please contact ourCustomer Care Department within the United Suies at (800) 762-2974, outside the United States at(317) 572-3993 or fax i S P i 572-4002.Wiley also publishes it5 books in a vanety of electronic formats. Some content that appears in print maynot be available in electronic format. For information about Wiley products, visit our web site atwww.wiley.com.

Library of Congress Caialoging-in-Publication Data is available.ISBN-13: 978-0-471-14323-9ISBN-IO: 0^71-14323-5Pnnted in the United Slates of .Amenca.10 9 8 7 6 5 4

7/29/2019 01071000098

4/8

vi PREFACEin the course of uriting this text, we had the fortune of help and support of many

people. First we express our gratitude to the manag em ent of our acade m ic and industrial institutions, the Nationafchiao Tung Universit>'. the National Nano Device Laboratories. Agere Systems, and MVC. without whose support this book could not havebeen written. We wish to thank the Spring Foundation of the National Chiao TungUniversity for the financial support. One of us (K. Ng) would like to thank J. Hwangand B. Leung for their continued encouragement and personal help.

We have benefited greatly from suggestions made by our reviewers who tooktheir t ime from their busy schedule. Credits are due to the fol lowing scholars:A. Alam. W. Anderson. S. Banerjee. J. Brews. H. C. Casey. Jr.. P. Chow. N. de Rooi j .H. Eiseie. E. Kasper. S. Luryi. D. Monroe. P. Panayotatos. S. Pearton, E. F. Schubert.A . Se ab aug h. M. Shur . Y . Taur . M . Te ich , Y . Ts iv id is . R . T un g. E. Ya ng, andA. Zasla\sky. We also appreciate the permission granted to us from the respecti\'ejournals and authors to reproduce their original figures cited in this work.

It is our pleasure to acknowledge the help of many family members in preparingthe manuscript in electronic format: Kyle Eng and Valerie Eng in scanning andimporting text from the Second Edition. Vivian Eng in typing the equations, and Jennifer Tao in preparing the figures which have all been redrawn. We are furtherthankful to Norman Erdos for technical editing of the entire manuscript, and to IrisLin and Nai-Hua Chang for preparing the problem sets and solution manual. At JohnWiley and Sons, we wish to thank George Telecki who encouraged us to undertakethe project. Finally, we are grateful to our \vi\ es. Th erese Sze and Lin da N g , for theirsupport and assistance during the course of the book project.

S. M. SzeHsinchu, TaiwanKwok K. NgSan Jose. CaliforniaJuly 2006

7/29/2019 01071000098

5/8

ContentsIntroduction 1

P a r t I S e m i c o n d u c t o r P h y s i c sC hapter 1 Physics and Prop erties of SemiconductorsA R e v i e w 7

1.1 Intr od uc tion , 7L2 Crystal Structures1.3 Energy Bands and Energy Gap, 121.4 Carrier Concen tra tion a t Therm al E qui l ibrium , 161.5 Carrier-Transport Ph eno m ena , 281.6 Phonon, Optical , and Thermal Properties, 501.7 Heterojunct ions and Nanostructures , 561.8 Basic Eq uations and Ex am ples, 62

P a r t II D e v i c e B u i l d i n g B l o c k sCh ap ter 2 p-n Ju n ct ion s 79

2.1 Introdu ction, 792.2 De pletion Reg ion, 802.3 Current-Voltage Characterist ics, 902.4 Junction Br eak do w n, 1022.5 Transient Be havio r and N oise , 1142.6 Terminal Fu nctio ns, 1182.7 He terojunctions, 124

C h a p te r 3 M e t a l -S e m i c o n d u c t o r C o n t a c ts 1 343.1 Intro du ction , 1343.2 Fo rm ation of Barrier, 1353.3 Cu rrent Transp ort Pro cesse s, 1533.4 M easu rem ent of Barrier He ight, 1703.5 D evice Structure s, 1813.6 O hm ic Co ntact , 187

VII

7/29/2019 01071000098

6/8

viii CONTENTSC hapter 4 M etal-Insulator-S emiconductor C apacitors 197

4.1 Introd uction. 1974.2 Ideal M IS Cap acitor, 1984.3 Sil icon MO S Ca pacito r 213

Part III T r a n s i s t o r sC hapter 5 Bipolar T ransistors 243

5.1 Introdu ction, 2435.2 Static Ch aracteristics, 24 45.3 M icrowave Ch aracteristics. 2625.4 Related Dev ice Stru cture s. 2755.5 Heterojunction Bipolar Tran sistor, 282

Ch ap ter 6 M O S F E T s 2 9 36.1 Introdu ction, 2936.2 Basic Device Ch aracteristics. 2976.3 Nonuniform D oping and Buried-Chann el Device, 3206.4 Device Scaling and Short-C hann el Effects, 3286.5 M OS FET Structures, 3396.6 Circuit A pp lication s. 3476.7 No nvolatile M emory D evices. 3506.8 Sing le-Electron Tran sistor, 360

C h a pt er 7 J F E T s , M E S F E T s , a nd M O D F E T s 3 747.1 Introduction, 3747.2 J F E T a n d M E S F E T , 37 57.3 M OD FET, 401

P ar t IV N e g a t i v e - R e s i s t a n c e a n d P o w e r D e v i c e sC hapter 8 T unnel Devices 417

8.1 Introduction, 4178.2 Tunnel Dio de, 4188.3 Related Tunn el D evice s, 4358.4 Resonant-Tunneling Diode, 454

C h ap ter 9 IM PATT Diod es 4669.1 Introd uction . 46 6

7/29/2019 01071000098

7/8

C O N TEN TS ix9.2 Static Characteristics, 4679.3 Dynamic Characteristics, 4749.4 Power and Efficiency, 4829.5 Noise Behavior, 4899.6 Device Design and Performance, 4939.7 BARITT Diode, 4979.8 TUN NETT Diode, 504

C hapter 10 T ransferred-E lectron and R eal-S pace-T ransfer Devices 51010.1 Introduction, 51010.2 Transferred-Electron Device, 51110.3 Real-Space-Transfer Devices, 536

C hapter 11 T hyristors and Power Devices 54811.1 Introduction, 54811.2 Thyristor Characteristics, 54911.3 Thyristor Variations, 57411.4 Other Power Devices, 582

Part V Pho tonic De vices and SensorsC hapter 12 LE Ds and Lasers 601

12.1 Introduction, 60112.2 Radiative Transitions, 60312.3 Light-Emitting Diode (LED ), 60812.4 Laser Physics, 62112.5 Laser Operating Characteristics, 63012.6 Specialty Lasers, 651C hapter 13 Photodetectors and S olar C ells 663

13.1 Introduction, 66313.2 Photoconductor, 66713.3 Photodiodes, 67113.4 Avalanche Photodiode, 68313.5 Phototransistor, 69413.6 Charge-Coupled Device (CCD ), 69713.7 Metal-Semiconductor-Metal Photodetector, 71213.8 Quantum-W ell Infrared Photodetector, 71613.9 Solar Cell, 719

7/29/2019 01071000098

8/8

X C O N T E N T SCh ap ter 14 Sensors "^^^

14.1 Introdu ction, 74314.2 Th erm al Sen sors, 74414.3 M echan ical Sen sors, 75014.4 M agne tic Sen sors. 75814.5 Chem ical Sensors, 765

Appendixes 773A. List of Sy m bols. 775B. International System of Units, 785C. Unit Prefixes. 786D. Greek Alphabet, 787E. Physical Co nstants, 788F. Properties of Important Semiconductors, 789G. Prop erties of Si and GaAs, 790H. Properties o f S i O . and Si3N4, 791

Index 793