結晶工学特論　 part II 鍋谷暢一 化合物半導体とエピタキシー

part II

Light Emitting Diode(LED)Laser Diode(LD)Photo Diode(PD)Solar Cell

Metal-Semiconductor Field Effect Transistor(MESFET)Hetero Bipolar Transistor(HBT)High Mobility Electron Transistor(HEMT)

()Si, Ge, (C)GaAs, InP, InAs, InSb, GaNCuInSe2

diamondzincblendewurtzitechalcopyrite

EwaldX

GaAs8,800 cm2/Vs Si1,350 cm2/VsAlGaAs, AlGaInP, InGaAsP, InGaN,

SiGaAsAlGaInPInGaAsPGaInNICCPUCD,DVD,1.55m

EghvEghvLDLEDPD

Eg c h 1.41 eV (GaAs) 1.55m (LD)890 nm0.8 eV

InGaAs InxGa1-xAs (0x1)x : In

IIIxIII1-xV, IIIxIIIyIII1-x-yV, IIIVyV1-y, IIIxIII1-VyV1-y, InGaAs, AlGaInP, GaAsP, InGaAsP, In

InxGa1-xAsyP1-y

LEDLD

T. Mukai et al, Jpn. J. Appl. Phys., 38, p.3976 (1999)

nnpp+LED

Laser Diode)

nnpp+LD

LEDLDLEDLD

HEMT

nm() ppm

LD,LED

IC

epitaxy = epi + taxyepi taxiz

Liquid Phase Epitaxy(LPE)

Halide Vapor Phase Epitaxy(HVPE)

OrganoMetalic Vaper Phase Epitaxy(OMVPE, MOVPE, MOCVD)

Molecular Beam Epitaxy(MBE)

Liquid Phase Epitaxy(LPE)

nm

Halide Vapor Phase Epitaxy(HVPE)H2AsH3, PH3GaHCl

Cl, I )

MOVPEMBE1m/h ML/sMLHEMTLDGaInNAs, InGaN

MOVPETMGa( Ga(CH3)3 ), TMAl, TMIn,TEGa( Ga(C2H5)3 ), TEIn, AsH3, PH3, NH3, TBAs( t-C4H9AsH2 ), TBP, DMHy, DEZnSiH4, H2Se

MOVPE()H2

MOVPE()

MOVPE

LC504

LC50PH311-50TBP>1100AsH35-50TBAs70

MOVPE

MOVPEAsPN

MBEMBE

K

k(Knudsen cell)

(PBN)12009001000AsH3, PH3, As4

As2, P2MO

MBEMBE Ga, Al, In, As

MBEMBE

MBE

MOMBE

MBENH3

N2 N-N 9.8eV NH3DMHyN2InNIn N500NH3 1RF13.56MHz)ECR2.45GHz, 875GMBE

N2*N* N2+(N2+)*N+

W.C. Houghes et al., J. Vac. Sci. Technol., B13(1995)1571.391428747822100W, 210-4TorrECR 2nd positive RF N*1st positive

LED, LD, HEMT

LPE, HVPE, MOVPE, MBE