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ELECTRICAL CHARACTERISTICS(VIN = 12V, CVDD = 1μF, CIN = 22μF, TA = TJ = -40°C to +85°C, typical values are at TA = +25°C, unless otherwise noted.) (Note 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functionaloperation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure toabsolute maximum rating conditions for extended periods may affect device reliability.
Note 1: LX has internal clamp diodes to PGND and IN. Applications that forward bias these diodes should take care not to exceedthe IC’s package power dissipation.
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to china.maxim-ic.com/thermal-tutorial.
IN to SGND.............................................................-0.3V to +30VEN to SGND.................................................-0.3V to (VIN + 0.3V)LX to PGND ................................-0.3V to min (+30V, VIN + 0.3V)LX to PGND .....................-1V to min (+30V, VIN + 0.3V) for 50nsPGOOD to SGND .....................................................-0.3V to +6VVDD to SGND............................................................-0.3V to +6VCOMP, FB, SS to SGND..............-0.3V to min (+6V, VDD + 0.3V)BST to LX .................................................................-0.3V to +6VBST to SGND .........................................................-0.3V to +36VSGND to PGND ....................................................-0.3V to +0.3VLX Current (Note 1) ....................................................-5A to +8AConverter Output Short-Circuit Duration ...................Continuous
Operating Temperature Range ..........................-40°C to +85°CJunction Temperature .....................................................+150°CStorage Temperature Range ............................-65°C to +150°CLead Temperature (soldering, 10s) .................................+300°CSoldering Temperature (reflow) .......................................+260°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
STEP-DOWN CONVERTER
Input-Voltage Range VIN 4.5 28 V
Quiescent Current IIN Not switching 2.1 4 mA
VEN = 0V, VDD regulated by internalLDO
2 12Shutdown Input Supply Current
VEN = 0V, VIN = VDD = 5V 18 28
μA
ENABLE INPUT
EN Shutdown Threshold Voltage VEN_SHDN VEN rising 1.4 V
EN Shutdown Voltage Hysteresis VEN_HYST 100 mV
VEN_LOCK VEN rising 1.7 1.95 2.15 VEN Lockout Threshold Voltage
Note 3: Specifications are 100% production tested at TA = +25°C. Limits over the operating temperature range are guaranteed bydesign and characterization.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
SS Current ISS VSS = 0.45V, sourcing 4.5 5 5.5 μA
SS Discharge Resistance RSS ISS = 10mA, sinking, VEN = 1.6V 6 Ω
SS Prebiased Mode Stop Voltage 0.65 V
Current Sense to COMPTransconductance
GMOD 9 S
COMP Clamp Low VFB = 0.7V 0.68 V
PWM Compensation Ramp Valley 830 mV
PWM CLOCK
Switching Frequency fSW 315 350 385 kHz
Maximum Duty Cycle D 90 %
Minimum Controllable On-Time 150 ns
INTERNAL LDO OUTPUT (VDD)
VDD Output Voltage VDD IVDD = 1mA to 25mA, VIN = 6.5V 4.75 5.1 5.5 V
VDD Short-Circuit Current VIN = 6.5V 30 80 mA
LDO Dropout Voltage IVDD = 25mA, VDD drops by -2% 250 600 mV
NOTE: THE GMOD STAGE SHOWN ABOVE MODELS THE AVERAGE CURRENT OFTHE INDUCTOR INJECTED INTO THE OUTPUT LOAD. THIS REPRESENTS ASIMPLIFICATION FOR THE POWER MODULATOR STAGE DRAWN ABOVE.