Knowledge Mapping Solar Cell 4 / 2551 ก 2550 ก ก ก 489 ก ISI:WOS 64 ก Univ.Nava Lisboa , Portugal 24 Material Science 240 Amorphous Silicon 118/60 ก Fortunato , E 34 ก ก ก ก ก 417 ก ก Delphion text mining Micron technology inc. ก127 ก กForbes , Leonard 38 ก ก 2006 151 ก H01Lh Electricity basic 97 ก / / / Solar Cell 2 กก 2 1 publications Profile ก 3-8 Top 5 9 ก X 10 ISI Solar Cell ก 11-12 ก X 13 Auto Correlation 14 2 patents Delphion Snapshot Top 10 15-16 Delphion Cluster กกก 17 Delphion - Image viewing ก 18-19 ก / 20
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# 2 ' 2 A 5 H ' 2 ! # 9 I Solar cell · (organic solar cell) OR (silicon solar cell) OR ( polymer solar cell) OR (dye sensitized solar cell) OR (amorphous silicon) OR (microcrystalline
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(organic solar cell) OR (silicon solar cell) OR ( polymer solar cell) OR (dye sensitized solar cell) OR (amorphous silicon) OR (microcrystalline silicon) OR (monocrystalline silicon))
AND
(spray pyrolysis) OR PECVD OR (plasma enhance chemical vapour deposition) OR MBE OR (z type) OR (w type) OR monolithic OR (module design) OR (solid state) OR (tonic liquid) OR (tio2 paste) OR sensitizer
A combinatorial analysis of deposition parameters on deposition process and performance of silicon thin films by VHF-PECVD [1]; A novel two-step laser crystallization technique for low-temperature poly-Si TFTs [1]; Effect of substrate temperature on the optical properties of a-Si : H films by RF-PECVD [1]; mc-Si : H/c-Si solar cell prepared by PECVD [1]; Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si : H thin films [1]
ACTA PHYSICA SINICA [13]; CHINESE PHYSICS [7]; JOURNAL OF NON-CRYSTALLINE SOLIDS [5]; INTERNATIONAL JOURNAL OF MODERN PHYSICS B [3]; SOLAR ENERGY MATERIALS AND SOLAR CELLS [3]
USA[63]
Natl Renewable Energy Lab [8]; Penn State Univ [8]; Univ Arkansas [6]; Colorado Sch Mines [4]; Texas A&M Univ [3]
Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques [2]; Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates [1]; Effects of a-Si : H resist vacuum-lithography processing on HgCdTe [1]; Maximization of the open circuit voltage for hydrogenated amorphous silicon n-i-p solar cells by incorporation of protocrystalline silicon p-type layers [1]; Amorphous-silicon thin-film transistors made at 280 degrees C on clear-plastic substrates by interfacial stress engineering [1]
JOURNAL OF NON-CRYSTALLINE SOLIDS [11]; SOLAR ENERGY MATERIALS AND SOLAR CELLS [7]; THIN SOLID FILMS [5]; APPLIED PHYSICS LETTERS [4]; JOURNAL OF ELECTRONIC MATERIALS [4]
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Country (Cleaned 2) Author Affiliation
(Name) (Cleaned 2) Subject Category Title
Publication
Year Keywords Plus Source
Top 11 Top Terms Top Terms Top Terms Top Terms Top Terms Top Terms
Japan[54]
Osaka Univ [7]; Natl Inst Adv Ind Sci & Technol [6]; Tohoku Univ [4]; Mitsubishi Heavy Ind Co Ltd [4]; Natl Inst AIST [3]
A dye-sensitized solar cell using a red ruthenium(II) complex with 9,9-bis(4-methoxyphenyl)-4,5-diazafluorene [1]; Mass-production of large size a-Si modules and future plan [1]; Effects of carrier concentration on the dielectric function of ZnO : Ga and In2O3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption [1]; Mechanisms of the growth of nanocrystalline Si : H films deposited by PECVD [1]; Combinatorial fabrication process for a-Si : H thin film transistors [1]
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS [9]; THIN SOLID FILMS [7]; JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY [5]; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS [4]; JOURNAL OF NON-CRYSTALLINE SOLIDS [4]
Portugal[40]
Univ Nova Lisboa [28]; New Univ Lisbon [8]; CEMOP [5]; UTL [5]; Chinese Acad Sci [4]
Characterization of silicon carbide thin films prepared by VHF-PECVD technology [1]; Mass spectroscopy analysis during the deposition of a-SiC : H and a-C : H films produced by hot wire and hot wire plasma-assisted techniques [1]; Metal-ferroelectric thin film devices [1]; Combining HW-CVD and PECVD techniques to produce a-Si : H films [1]; MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge [1]
Luminescence properties of amorphous silicon-nitride-based optical microcavities [1]; Microcrystalline silicon-carbon films deposited by silane-methane mixture highly diluted in hydrogen [1]; Electroluminescence and transport properties in amorphous silicon nanostructures [1]; Microstructural evolution of thermally treated low-dielectric constant SiOC : H films prepared by PECVD [1]; Microstructure analysis of a-SiC : H thin films grown by high-growth-rate PECVD [1]
Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD [1]; Microcrystalline silicon films and solar cells deposited by PECVD and HWCVD [1]; Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques [1]; Electronic states in a-Si : H/c-Si heterostructures [1]; Monitoring the reactivity of oxide interfaces in dye solar cells with photocurrent imaging techniques [1]
JOURNAL OF NON-CRYSTALLINE SOLIDS [6]; THIN SOLID FILMS [4]; JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS [4]; SURFACE & COATINGS TECHNOLOGY [2]; JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS [2]
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Country (Cleaned 2) Author Affiliation
(Name) (Cleaned 2) Subject Category Title
Publication
Year Keywords Plus Source
Top 11 Top Terms Top Terms Top Terms Top Terms Top Terms Top Terms
France[26]
Ecole Polytech [8]; Univ Paris 11 [5]; CNR [4]; Univ Lyon 1 [4]; Univ Paris 06 [4]
Mechanical stress in PECVD a-SiCH: aging and plasma treatments effects [1]; Electronic properties of Erbium doped amorphous silicon [1]; Comparison of the structural and optical properties of zinc oxide thin films deposited by d.c. and r.f sputtering and spray pyrolysis [1]; Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz [1]; Nuclear radiation detectors using thick amorphous-silicon MIS devices [1]
2006 [6]; 2004 [5]; 2007 [4]; 2001 [3]; 2005 [3]
AMORPHOUS-SILICON [9]; THIN-FILMS [5]; DISCHARGE [4]; LUMINESCENCE [4]; FILMS [3]
JOURNAL OF NON-CRYSTALLINE SOLIDS [4]; SURFACE & COATINGS TECHNOLOGY [3]; APPLIED SURFACE SCIENCE [2]; MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY [2]; ADVANCED MATERIALS FORUM II [2]
India[25]
Indian Assoc Cultivat Sci [15]; Indian Inst Technol [5]; Ecole Polytech [2]; Univ Delhi [2]; Univ Lyon 1 [2]
Comparison of structural and optoelectronic properties of n-type microcrystalline silicon and silicon oxide films with lowering of thickness [1]; Morphology and electronic transport of polycrystalline silicon films deposited by SiF4/H-2 at a substrate temperature of 200 degrees C [1]; Onset of microcrystallinity in silicon thin films [1]; Optoelectronic and structural properties of undoped microcrystalline silicon thin films: Dependence on substrate temperature in very high frequency plasma enhanced chemical vapor deposition technique [1]; Photoluminescent, wide-bandgap a-SiC : H alloy films deposited by Cat-CVD using acetylene [1]
JOURNAL OF PHYSICS D-APPLIED PHYSICS [4]; THIN SOLID FILMS [4]; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS [3]; JOURNAL OF NON-CRYSTALLINE SOLIDS [3]; INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE- PART A [1]
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Country (Cleaned 2) Author Affiliation
(Name) (Cleaned 2) Subject Category Title
Publication
Year Keywords Plus Source
Top 11 Top Terms Top Terms Top Terms Top Terms Top Terms Top Terms
Effect of the anchoring group (carboxylate vs phosphonate) in Ru-complex-sensitized TiO2 on hydrogen production under visible light [1]; Comparative study on the radiation damage of a-Si : H p-i-n diodes made by PECVD and ion shower doping [1]; Enhancement of the photocurrent generation in dye-sensitized solar cell based on electrospun TiO2 electrode by surface treatment [1]; Annealing effect on the optical properties of a-SiC : H films deposited by PECVD [1]; Construction and characterization of an amorphous silicon flat-panel detector based on ion-shower doping process [1]
2002 [9]; 2005 [4]; 2003 [3]; 2007 [3]; 2004 [3]
FILMS [3]; PLASMA [3]; CHEMICAL-VAPOR-DEPOSITION [3]; RESONANCE [2]; AMORPHOUS-SILICON [2]
JOURNAL OF THE KOREAN PHYSICAL SOCIETY [4]; THIN SOLID FILMS [3]; JOURNAL OF NON-CRYSTALLINE SOLIDS [2]; SURFACE & COATINGS TECHNOLOGY [1]; JOURNAL OF PHYSICAL CHEMISTRY B [1]
Netherlands[23]
Univ Utrecht [12]; Eindhoven Univ Technol [5]; Delft Univ Technol [3]; ECN Solar Energy [2]; Univ Twente [2]
Chemical modeling of a high-density inductively-coupled plasma reactor containing silane [1]; Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD [1]; Microcrystalline silicon growth in the presence of dopants: effect of high growth temperatures [1]; Micromorph" tandem solar cells at high deposition rates [1]; Absolute in situ measurement of surface dangling bonds during a-Si : H growth [1]
A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC [1]; Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique [1]; Microcrystalline silicon and 'micromorph' tandem solar cells [1]; Molecular-scale interface engineering of TiO2 nanocrystals: Improving the efficiency and stability of dye-sensitized solar cells [1]; Ne advent of mesoscopic injection solar cells [1]
THIN SOLID FILMS [4]; ADVANCED MATERIALS [2]; JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY [2]; NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT [2]; PROGRESS IN PHOTOVOLTAICS [2]
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Top 5 Countries <*[#ก+ China 64 �� ��* U.S.A. 63 �� ��* Japan 54 �� ��* Portugal 40 �� ��* Italy 32 �� ��*
Top 5 Affiliations <*[#ก+
Univ. Nova Lisboa , Portugal 24 �� ��* Chinese Academy of Science 22 �� ��* Nankia Univ. , China 16 �� ��* Indian Assoc. Cultivat Sci. 15 �� ��* Shanghai Jiao Tong Univ. , China 12 �� ��*
Top 5 Publication Years <*[#ก+
Year 2006 106 �� ��* Year 2002 77 �� ��* Year 2004 75 �� ��* Year 2003 63 �� ��* Year 2007 57 �� ��*
Top 5 Subject Categories ($�>ก��#(+��>�*�>]+̂ � ISI) <*[#ก+
Amorphous silicon 60 Amorphous silicon 118 PECVD 54 Chemical vapor deposition 80 Microcrystalline silicon 24 Films 57 Solar cells 24 Thin Films 57 Silicon 21 Hydrogenated amorphous sil 50
Top 5 Authors <*[#ก+
Fotunato , E 34 publications ( New Univ. Lisbon ; Portugal ) Martins, R 34 � (Univ. Nova Lisboa ; Portugal ) Ferreira; I 23 � (Univ. Nova Lisboa ; Portugal ) Aguas , H 22 � (Univ. Nova Lisboa ; Portugal ) Pereira , L 13 � (Univ. Nova Lisboa ; Portugal )
ก��a #�*� ��>�)>F)�b� P7� 9�����.!:�$� ก������ "8#��8##� 11 9����� ( )�����6�7 ,�ก�7��#+ก):��P�� ) X $�������$� �- ( Countries x Keywords )
11
(� ��>��E)� ���� � Solar Cell E�กc��^[ >]" ISI: WOS �0�<*[�)(ก�� [�� ���]��V* 180 �)\� ( Most Cited article : Times Cited 180 ) PT J AU Gratzel, M
TI Conversion of sunlight to electric power by nanocrystalline
dye-sensitized solar cells
SO JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
LA English DT Article DE dye-sensitized solar cell; nanocrystalline; sensitizer ID TEMPERATURE MOLTEN-SALTS; POLYMER GEL ELECTROLYTE; TIO2 ELECTRODES; EFFICIENCY; FILMS; TRANSPORT; NANOPARTICLES; ENHANCEMENT; PERFORMANCE; MECHANISMS AB The dye-sensitized solar cell (DSC) provides a technically and economically credible alternative concept to present day p-n junction photovoltaic devices. In contrast to the conventional silicon systems, where the semiconductor assumes both the task of light absorption and charge carrier transport the two functions are separated here. Light is absorbed by a sensitizer, which is anchored to the surface of a wide band gap oxide semiconductor. Charge separation takes place at the interface via photo-induced electron injection from the dye into the conduction band of the solid. Carriers are transported in the conduction band of the semiconductor to the charge collector. The use of sensitizers having a broad absorption band in conjunction with oxide films of nanocrystalline morphology permits to harvest a large fraction of sunlight. Nearly quantitative conversion of incident photon into electric cur-rent is achieved over a large spectral range extending from the UV to the near IR region. Overall solar (standard AM 1.5) to current conversion efficiencies of 10.6% have been reached. New electrolytes based on ionic liquids have been developed that show excellent stability both under prolonged light soaking and high temperature stress. There are good prospects to produce these cells at lower cost than conventional devices. Here we present the current state of the field, and discuss the importance of mastering the interface of the mesoporous films by assisting the self-assembly of the sensitizer
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at the surface of the oxide nanocrystals. (C) 2004 Elsevier B.V. All rights reserved. C1 Swiss Fed Inst Technol, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland. RP Gratzel, M, Swiss Fed Inst Technol, Lab Photon & Interfaces, CH-1015
PU ELSEVIER SCIENCE SA PI LAUSANNE PA PO BOX 564, 1001 LAUSANNE, SWITZERLAND SN 1010-6030 J9 J PHOTOCHEM PHOTOBIOL A-CHEM JI J. Photochem. Photobiol. A-Chem. PD JUN 1 PY 2004
VL 164 IS 1-3 SI Sp. Iss. SI BP 3 EP 14 PG 12 SC Chemistry, Physical GA 826QG UT ISI:000221843000002
�9d��� ��*P7�.!:'&(� 6�7 Gratzel, M, ��ก��(����� Swiss Fed Inst Technol, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland 6�7��6�7� Conversion of sunlight to electric power by nanocrystalline dye-sensitized solar cells &��*�� ,������� 6�7 JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY �*6�7 �)67� *q<���� 2004