第 13 第第第第第第第第第第第第第第第第第第第第 2014 Taiwan ESD and Reliability Conference Resistive switching Resistive switching and device reliability and device reliability in ZnO-based in ZnO-based nonvolatile memory nonvolatile memory devices devices Ming Chuan University Department of Electronic Engineering Wen-Ping Chiang, Min-Yu Yang , Chin Wang, Ge-Jia Liao, Hsien-Mei Wang, and Fu-Chien Chiu *
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第 13 屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference Resistive switching and device reliability in ZnO-based nonvolatile memory
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第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Resistive switching and device Resistive switching and device reliability in ZnO-based reliability in ZnO-based
Pulse width effect on VPulse width effect on VSETSET/V/VRESETRESET
Temperature effect on VTemperature effect on VSETSET/V/VRESETRESET
Conduction mechanism in ZnOConduction mechanism in ZnO
Endurance and memory windowEndurance and memory window
8第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
XPS in Pt/ZnO/PtXPS in Pt/ZnO/Pt
X-ray photoelectron spectroscopy (XPS) spectrum of O 1s in ZnO film.The peaks at 530 and 532 eV are due to lattice oxygen (ZnO) and nonlattice oxygen (oxygen vacancy).
9第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
XPS in Pt/ZnO/Pt XPS in Pt/ZnO/Pt
XPS spectrum of Zn 2p in ZnO film. Zn 2p1/2 and 2p3/2 for Zn2+ correspond to the peaks at 1046.2 and 1023.2 eV. Zn 2p1/2 and 2p3/2 for Zn0 correspond to the peaks at 1047 and 1024 eV.
10第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
In Pt/ZnO/Pt structure, bipolar resistive switching behavior was found and electroforming was required.
11第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Switching voltage vs. ac voltage pulse widthSwitching voltage vs. ac voltage pulse width
Both set voltage (VSET) and reset voltage (VRESET) are increased with decreasing ac voltage pulse width.
12第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Switching voltage vs. temperatureSwitching voltage vs. temperature
Temperature dependence on set/reset voltage.
13第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
I-V characteristics in HRSI-V characteristics in HRS
Temperature-dependent I-V characteristics in high-resistance state (HRS).
14第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Hopping conduction in HRSHopping conduction in HRS
Trap spacing (a) extraction of hopping conduction in high-resistance state (HRS).
15第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Arrhenius plotArrhenius plot
Arrhenius plot for trap level (Φ t) extraction.
16第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
J-E curves in LRSJ-E curves in LRS
Temperature-dependent J-E curves in low-resistance state (LRS).
17第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
DC Cycling EnduranceDC Cycling Endurance
Voltage-swept I-V characteristics of dc cycling endurance.
18第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Weibull plots in HRS and LRSWeibull plots in HRS and LRS
Weibull plots of HRS/LRS resistances during dc switching cycles.
19第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
AC/DC memory windowAC/DC memory window
Memory window as a function of the number of dc/ac switching.
20第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
ConclusionConclusion1. The bipolar resistive switching behavior was found in Pt/ZnO/Pt
structure.
2. The amplitude of resistive switching voltage is dependent on the
applied ac voltage pulse width (Wac).
3. During the set process, the conductive filaments formed are
associated with the defect state of interstitial zinc in ZnO film. The
defect trap spacing is about 2 nm and the trap energy level is about
0.46 eV.
4. For the test of dc cycling endurance, a serious memory window
closure is considered. Whereas, the ac cycling endurance can be over
106 switching cycles.
21第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
ReferencesReferences[1] W. W. Zhuang et al., “Novell colossal magnetoresistive thin film nonvolatile resistance random
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22第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
ReferencesReferences[10] M. Villafuerte, S.P. Heluani, G. Juárez, G. Simonelli, G. Braunstein, and S. Duhalde, “Electric-pulse-induced
reversible resistance in doped zinc oxide thin films,” Appl. Phys. Lett., vol. 90, no. 5, p. 052105, Jan. 2007.
[11] W.Y. Chang, Y.C. Lai, T.B. Wu, S.F. Wang, F. Chen, and M.J. Tsai, “Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications,” Appl. Phys. Lett., vol. 92, no. 2, p. 022110, Jan. 2008.
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[13] S. Kim, H. Moon, D. Gupta, S. Yoo, and Y.K. Choi, “Resistive switching characteristics of sol–gel zinc oxide films for flexible memory applications,” IEEE Trans. Electron Devices, vol. 56, no. 4, pp. 696-699, Apr. 2009.
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[15] F. C. Chiu, “A review on conduction mechanisms in dielectric films”, Advances in Materials Science and Engineering, vol. 2014, Article ID 578168, 18 pages, Feb. 2014.
[16] A. B. Djurisic and Y. H. Leung, “Optical properties of ZnO nanostructures,” Small vol. 2, no. 8-9, pp. 944-961, 2006.
[17] D. Ielmini, F. Nardi, and C. Cagli, “Universal reset characteristics of unipolar and bipolar metal-oxide RRAM,” IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3246-3253, Oct. 2011.
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第 13屆台灣靜電放電防護技術暨可靠度技術研討會 2014 Taiwan ESD and Reliability Conference
Thank you for your attention.Thank you for your attention.