TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 …...TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 2006 CONTENTS 9Ô369Õ 9Ù369Ù ' . $ø { ¨ É Õ K 9 ` ' ; \ f + , 2 é. 5ô ã ÷ ¸ Present

36

43

49

Low HAPs 51

53

55

57

59

NTT 61

‘07 63

65

Technical Review Present Status and Future Prospect of III-Nitride

Heterojunction Transistors Masaaki Kuzuhara 36 Koji Hirata Masayoshi Kosaki Naoki Shibata

Durability Evaluation of High Molecular Material in a Vehicle Katsumasa Takeuchi 43 Hidenori Hayashi Hidekazu Kurimoto

New Technologies Satin like Plating Yuji Hotta 49

Yosuke Maruoka Takayasu Ido Hiroshi Watarai

Low HAPs Primer (for MACT Regulation) Takashi Sekiya 51

New Products Steering Wheel with Heater Element Tetsuo Yasuda 53

Koji Sakurai Low Pressure Loss Cool Air Intake Duct Hiroshi Iwao 55

Isao Takada

Hybrid Wheel Kazuo Takeda 57 Tetsuya Arakawa Tomokazu Nishikawa

Opening Trim Weather Strip with Special Electrostatic Flocking Mikiya Kuroki 59Kiminori Mine

Cellular Phone Case for NTT DoCoMo Masatoshi Shimada 61

‘07 Model Air Purifier Hideaki Yamaguchi 63

List of Published Papers 65

TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 2006

CONTENTS

36

36

Present Status and Future Prospect of III-Nitride Heterojunction Transistors

* 1 * 2 * 3 * 4

*1 Masaaki Kuzuhara*2 Koji Hirata*3 Masayoshi Kosaki*4 Naoki Shibata

GaN

3eV2 107cm/s

-V

SiC

Si GaAs

1-3)

(FET)

2002

AlGaN/GaNFET

FED.

FET 1990FET

MESFETAlGaN/GaN

FET

37

37

HEMT

AlGaN/GaN

GaN GaN

GaN AlGaN

AlGaN/GaNGaN

(2DEG)Al Al 25-

30% 1x1013cm-2

AlGaN/GaNAlGaN

SiC

GaN AlN4)

AlGaN/GaN AlGaN Ni/Au

Ti/AlAlGaN

SiNAlGaN/GaN FETFET

2DEG

FET

AlGaN

5)

FET

FET

AlGaN/GaNFET HEMT

FET

Wu SiC(Wg)246mm HEMT(Vdd)120V 4GHz 32.2W/mm

6) OkamotoSiC Wg=48mm

Vdd=53V 2GHz 230W1).Wakejima SiC

Wg=48mm HEMTVdd=45V

2.14GHz 371W2) Wu SiC

GaN

AlGaN

[0001]

PSP

PSP

GaN

AlGaN+ + + + + + + + + + + + + + +

GaN

AlG

aN

Ec

EvG

aN

AlG

aN

Ec

Ev

32.2W/mm

230W

371W

8W

Cree

FED

Cree

163GHz NICT

FED

(6)

(1)

(2)

(7)

(8)

32.2W/mm

230W

371W

8W

Cree

FED

Cree

163GHz NICT

FED

(6)

(1)

(2)

(7)

(8)

Vol.48 No.2 (2006) 38

38

0.15 m HEMT (Wg=1.5mm)Vdd=28V 8W

30GHz 7) Higashiwaki0.06 m

HEMT 5V163GHz 8)

FET V

(G) (D)G-D

G-D

m 100-200V 1,6)

G-D

GaN3.3MV/cm G-D 3 m

1kV

AlGaN/GaNFET

FET

9)

10)

AlGaN11)

AlGaN

SiN AlN Al2O3 TiO2

HfO2

S

AlGaN/GaN

DG

AlGaN/GaN

DS G

AlGaN/GaN

DS G

(a) (b)

39

39

AlGaN/GaN FET

G-D

12)

FET (2DEG)AlGaN

2DEG

G-D

AlGaNG-DG-D 2DEG

FET

GaAs FET13)

G-D

FET 20-30V

FETFET

AlN GaNInN

00

S DG

SiN

GaN

AlGaN

2DEG

(a)

S DG

SiN

2DEGGaN

AlGaN

(b)

S DG

SiN

GaN

AlGaN

2DEG

S DG

SiN

GaN

AlGaN

2DEG

(a)

S DG

SiN

2DEGGaN

AlGaN

(b)

Vol.48 No.2 (2006) 40

40

AlGaN/GaN AlInN/GaNFET

AlN Al InNIn

AlN GaN InN

InN GaN AlN 1880 810310 cm2/VsInN

InN GaN AlN 4.2x107 2.8x107

2.0x107 cm/sInN

InN InN In

AlN 6.2eV

Al 57% AlGaN8MeV/cm

14) AlN Al

In Al

AlGaN/GaNAlInN/GaN

GaN

InInGaN

AlInN

InN InN In

InN

AlInN/InN

(kV/cm)0

0

(107 c

m/s

)

1

2

3

4

5

100 200 300 400 500

InN

AlN

GaN

T=300Kundoped (A)

(eV

)

AlN

GaN

InN3 3.23.1 3.3 3.53.4 3.6

0

1

2

3

4

5

6

7

41

41

In InGaN AlInN/InGaN

CMOS nFET

InNIn InGaN

AlN AlNAl

AlN

AlN AlN AlAlInN/AlGaN

HEMT

n

CPU 100W

ACAC

AC

Si

1MHz (L)(C)

100MHz

L C

Vol.48 No.2 (2006) 42

42

AlGaN/GaN HEMT

1) Y. Okamoto et al., IEEE Trans. Microwave Theory and Tech., 52, pp.2536-2540 (2004).

2) A. Wakejima et al., Electron. Lett., 41, pp.1371-1372 (2005).

3) T. Kikkawa et al., IEEE MTT-S Int. Microwave Symp. Dig., Vol.3, pp.1347-1350 (2004).

4) K. K. Chu et al., IEEE Electron Device Lett., 25, pp.596-598 (2004).

5) T. Kawasaki et al., Extended Abstracts 2005 Int. Conf. SSDM, Kobe 2005, pp.206-207.

6) Y.-F. Wu et al., IEEE Electron Device Lett., 25, pp.117-119 (2004).

7) Y.-F. Wu et al., IEEE 2005 IEDM Tech. Dig., Washington D.C. 2005, pp.593-595.

8) M. Higashiwaki., IEEE Electron Device Lett., 27, pp.16-18 (2006).

9) J. P. Ao et al., IEEE Electron Device Lett., 24, pp.500-502 (2003).

10) K. Shiojima et al., Appl. Phys. Lett., 78 pp. 3636-3638 (2001).

11) H. Hasegawa et al., J. Vac. Sci. & Technol., B20, p.1647 (2002).

12) T. Hashizume, Oyo Butsuri, 73, pp.333-338 (2004).

13) K. Asano et al., IEEE 1998 IEDM Tech. Dig., San Francisco 1998, pp.59-62.

14) A. Nishikawa et al., Extended Abstracts 2006 Int. Conf. SSDM, Yokohama 2006, pp.974-975.

(a)

(b)

43

43

Durability Evaluation of High Molecular Material in a Vehicle

*1 Katsumasa Takeuchi*2 Hidenori Hayashi 1*3 Hidekazu Kurimoto 1

150

1970

Vol.48 No.2 (2006) 44

44

17 1

45

45

15 30 km 10 20

80 60

40

MTBF

Vol.48 No.2 (2006) 46

46

20 30

10

10

47

47

Vol.48 No.2 (2006) 48

48

CAE

(1) ( ) AT 1999

(2) (3)3 1991

(4) ,1985

(5)vol.24 No.3,26

(6)1982

(7)vol.28,No,2,51 1986

(8) ,R&Dvol.36,No.1,61 2001

49

49

Satin like Plating

*1 *2 *3 *4

*1 Yuji Hotta *2 Yosuke Maruoka *3 Takayasu Ido *4 Hiroshi Watarai

Vol.48 No.2 (2006) 50

50

5 100 m

( )

.

51

51

Low HAPs MACT

Low HAPs Primer (for MACT Regulation)

* 1

*1 Takashi Sekiya 3

VOC Volatile Organic Compounds

( HAPsHazardous Air Pollutants)MACT MACT

Maximum Achievable Control Technology

HAPs 188

HAPs

HAPsHAPs

HAPsPP

HAPs 0.22lb-HAPs/lb-Solid

PP Low HAPs

PPCPO

PP

Low HAPs

HAPs VHAPs

Vol.48 No.2 (2006) 52

52

CPO

HAPs

Low HAPs HAPs-

HAPs MACT0.22 lb-HAPs/lb-Solid

- Low HAPs HAPs ( )

Low HAPs

Low HAPsPP

1.16

0.15 0.22

53

53

Steering Wheel with Heater Element

* 1 * 2

*1 Tetsuo Yasuda *2 Koji Sakurai

ON

Vol.48 No.2 (2006) 54

54

ON 30 OFF

30

55

55

Low Pressure Loss Cool Air Intake Duct

*1 Hiroshi Iwao P*2 Isao Takada P

Vol.48 No.2 (2006) 56

56

CAE

CAE

CADCAE

CAE

p.80 1989

57

57

Hybrid Wheel

* 1 * 2 * 3

*1 Kazuo Takeda*2 Tetsuya Arakawa *3 Tomokazu Nishikawa

G/N

G/N

G/N

G/N

A

A

Vol.48 No.2 (2006) 58

58

G/N

10 15

LEXUS SC430G/N

LEXUS GS450h

2

0

1

2

3

4

5

0 100 200 300COST(%)

Hybrid Wheel

1)2)

1)

2)

59

59

Opening Trim Weather Strip with Special Electrostatic Flocking

*1 *2

*1 Mikiya Kuroki*2 Kiminori Mine

Vol.48 No.2 (2006) 60

60

61

61

NTT

Cellular Phone Case for NTT DoCoMo

* 1

*1 Masatoshi Shimada

2005 10 NTT FOMA GPSSA700iS

NTT FOMASA700iS

SA700iS FOMA

103 112.2 QVGA

FOMA GPS

LCD Mg

S KEY

RF KEYXYSA700iS

11

QVGA2.265,536TFT

103 CCD

0.9 EL

miniSD512MB

Mg

RFXY

Vol.48 No.2 (2006) 62

62

LCD Mg

20

SA700iSS

KEY

PL

R PLPL

PLm

KEY Cu+NiSA700iS

GPSCu+Ni XY

XY

XY

QC

NTTSA800i

( )

( )

( )

( )

63

63

’07

’07 Model Air Purifier

* 1

*1 Hideaki Yamaguchi

200

OEM’07

’07

’07

Vol.48 No.2 (2006) 64

64

’07

:2006.08

65

65

List of Published Papers (1)(2005 11 2006 10 ) *

Li NaGaN

***

**

**

50

**

05.12.9

1148

2006LED *

**

*

30

Li Na2 GaN

***

**

**

53

MOVPE GaN *

*

67

66

66

List of Published Papers (2)(2005 11 2006 10 ) *

CAE 1*

**

*

*

172006.5.24

CAE *****

172006.5.24

CAE 3****

*

172006.5.24

CAE***

**

172006.5.24

CAE*

*

***

172006.5.24

AINGaN Si

53

67

67

List of Published Papers (3)(2005 11 2006 10 ) *

AlN Na **

*****

**

53

Sn-MgAIN

**

***

**

****

53

Legibility under reading lights using white LED

M.Yamagichi* K.Yamba* F.Kawasaki M.Nagata

Gerontechnology Vol.3 5

Epitaxial growth of GaN layers on metallic TiN buffer layers

Y. Uchida* K. Ito* S. Tsukimoto* Y. Ikemoto K. Hirata N. Shibata M. Murakami

Journal of Electronic Materials (2006.08)

**

82006.09

48 2

40 1 1998 6 9 1850 1999 41 1

21 C60 LED2003

E

2006 12 14 2006 12 22

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