TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:
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TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
High voltage charger solution
Li, Wang: wang-li@ti.com
MGambrill, Michael: mgambrill@ti.com
Liang, Roger: r-liang@ti.com
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Abstract
• A typical bq24610 Application
• A high voltage charger block diagram
• Test results
• More higher input voltage solution
• SMBus high voltage charger solution
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
A typical bq24610 Application
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TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
A Typical standalone charger application circuit
Power SourceSelector
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
ACNACP
ACDRV
VREF
CE
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q5
L: 6.8µH
C210µF
SYSTEM LOAD
C810µF
RSR10m
C11 0.1µF
bq24610
C310µF
C410uF
VCC
Q1
Q4
Q2
Q3
C12.2µF
Adapter
RAC: 10m
C710µF
Battery Pack
C100.1µF
C5:1µFC121µF
C170.22µF
C70.1uF
C9100pF
R1953kΩ
R2105kΩ
R7100kΩ
R857.6kΩ
R5100kΩ
R622.1kΩ
R3100kΩ
R495.3kΩ
R99.31kΩ
R10430kΩ
PackThermistor
R11:10kΩ
R12:10kΩ
R13:10kΩ
Adapter
bq24610: 600kHz, Li-Ion4x4mm QFN-24
R162Ω
Typical 1-6 Li-Ion Cells, VIN max: 28V
10
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Optional section divider or presentation title slideHigh voltage charger block diagram
5
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
8-cell Li-ion battery charger
•Basic requirements: Output: if 4.2V/cell battery, the output voltage setting needs 4.2Vx8=33.6V.
Input: Vin > 33.6V+few volt hysteresis
A typical bq24610/30 application circuit can not accept the input voltage higher than 32V (Input OVP setting).
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
The charger circuit have to do several modifications.The block diagram of HPA603 EVM:
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
VCC bias supply solution
Function block: Vcc Bias supplyIt powers the charger IC-bq24610/30, external half bridge gate driver, current sense circuit and OMAMP buffer. And it is also used for charging up a deeply discharged battery. A switching Vcc bias power supply needs:• Operating from the maximum input voltage• An 8-14 V output voltage: It is set by the external
half bridge gate driver requirement• At least 200mA: It is derived from the sum of the
charging current for deeply discharged battery and the whole board current consumption.
For 60V input, the TPS54060 is selected to meet these three requirements.
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
Half bridge gate drive solution
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Half bridge gate drive solution
Function block: Half Bridge Gate DriveIt receives the charger IC HIDRV and LODRV signal and drive the buck FET Q5 and Q6. The half bridge gate drive needs:
• 20% input voltage margin • Have two Complementary inputs to match HIDRV and LODRV output of bq24610.• Input logic high threshold need lower than 3V match the voltage level of bq24610/30’s HIDRV and LODRV output.• Reserve several resistors, caps and diode to adjust turn-on&off speed and dead time
For 60V input, the UCC27201 is selected to meet these three requirements.
HIDRV
PH
LODRV
PGND
Q2
Cinbq24610
Q1UCC27201UCC27201
Vcc
HI VDD
LI VSS
HBHOHSLO
R13D3
R14D4
C21
C22
R25
R26
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
Current sense solution
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Current sense solution
Function block: Current senseIt is a high voltage bus current sensor or a current mirror circuit. It needs
• Set 1:1 ratio between Rsns Voltage and Rs voltage.
For battery voltage is upto 60V, the INA169 is selected to meet that requirement.
Rsns
Rs(R6)
1k
1kCurrent sense
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
buffer solution
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Current sense buffer solutionFunction block: BufferThe SRP/SRN pin of charge IC has few milliampere
sink current. The current sense output may not have enough current capability. The buffer circuit needs:
• Keep the output voltage on SRP/SRN pin is same as Rs voltage
• Provides enough current (8mA) to drive SRP/SRN pin.
The LM358 is selected to meet these two requirements.
U1bq24610
Rs(R6)
R3SRN
Current senseSRP
RsnsL
BufferU5:LM358
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
2~3V clamp circuit solution
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
2~3V clamp circuit solutionFunction block: 2~3v Clamp circuitIf the SRP/SRN pin voltage is lower than 2V, the IC
runs at a short protection mode. The low side MOSFET is held off at that mode. The clamp circuit needs:
• Voltage is between 2~3V.• Can absorb the Rs current• Can support SRN pin sink current (8mA)
A simple 2~3V clamp circuit can be created from the bq24610’s 3.3V VREF.
bq24610Rs
(R6)
R27 C30
SRN
Current sense
VREF
VREF
RsnsL
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
BTST setting
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
BTST setting
Function block: BTST settingTo isolate PH, HIDRV and BTST pin. The PH pin is connected
to ground. BTST voltage needs:• Higher than 3V to keep correct gate logic. • Lower than 4V to keep LODRV send refresh pulse every
switching cycle. External half bridge gate will use that LODRV refresh pulse to charge its bootstrap cap.
A simply resistor divider from 6V REGN can set the BTST voltage easily.
bq24610R22
R21 C16
REGN
BTST
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
BTST setting
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Pre-condition deeply discharge battery solutionFunction block: Pre-condition deeply discharge battery
When battery voltage is deeply discharged lower than 3V, the current sense circuit can not work properly. The pre-condition circuit needs:
• The pre-condition current can bring a deeply discharged battery voltage higher than 3V.
• The pre-condition current is lower than bias supply output capability.
A simply resistor (R46 and R47) and diode (D8) pre-charge path can pre-charge the battery voltage up to the 3V that is a minimum operating voltage range of the current sense circuit. A comparator compares the battery voltage with 3.3Vref. If the battery voltage is higher than 3.3V, the CE is pulled to high and charger is enabled.
TPS54060VCC bias supply
D8
R31
R46
R47VREF
VREF
BAT
R10
D7
CE LM2903
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
The calculation tool of L, C value and other parameters
The calculation tool of L, C value and other parameters can be found in http://www.ti.com/litv/zip/sluc175c
Battery charge voltage setting
Battery pre-charge/termination current setting
Battery fast-charge current setting
Iripple_Lout_Vripple
LC output filter resonant frequency
Fast charge timer
TS resistor network
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
EVM and Application note information
The high voltage charge EVM (HPA603) and user’s guide (SLUU447) are available.
Application notes (SLUA580) is released: A practical high voltage charger solution with existing bq24610 charger IC.
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Test Results on HPA603 EVM
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TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Test result on HPA603 EVM
• 1 ISET1 control IBAT– 1.1 ISET1 vs IBAT waveform– 1.2 ISET1 transient– 1.3 ISET1 accuracy
• 2 Switching waveforms
• 3 Charger start-up or shut-down with CE control
• 4 Battery insertion and removal
• 5 soft start
• 6 efficiency
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Modified Charger Block Diagram
Battery Pack
BATDRV
REGN
BTST
HIDRV
PH
LODRV
GND
SRP
SRN
VFB
VREF
ISET1
ISET2
ACSET
TS
TTC
STAT1
STAT2
PG
Q2
VCC
Q1
DC Input
PackThermistor
Vcc
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24610/30
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
35~57VACNACP
ACDRV
CECE
The charger circuit have to do several modifications.The block diagram of HPA603 EVM:
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
1.1 ISET1 vs IBAT waveform
• IBAT are proportional to ISET1. The ratio follows the datasheet equation.
ISET1
IBAT
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
1.2 ISET1 transient 2
• ISET1 from 1V to 2V ( CCM)
ISET1
IBAT
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
1.3 ISET1 accuracy
ISET1 vs Vsns
0
2
4
6
8
10
12
14
16
0 0.5 1 1.5 2 2.5
ISET1 (V)
Vsn
s er
ror
(%)
Series1
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
2 Switching waveforms
Inductor current
Switching node
High side gate
High side gate
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
3. Charger start-up or shut-down with CE control
Switching node
Inductor current
CE
VBAT
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
4 Battery removal and insertion
Ch1 (yellow): VinCh2 (blue): VbatCh3 (pink): PH4 (green): IL
VBAT
VINSwitching node
Inductor current
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
5 soft start
Ch1 (yellow): Vin; Ch2 (blue): Vbat; Ch3 (pink): PH; ch4 (green): IL
Inductor current
Switching node
VIN
VBAT
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
6 efficiency
Efficiency and power dissipation
0.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
70.0%
80.0%
90.0%
100.0%
0 1 2 3 4 5 6
Charging current (A)
Eff
icie
ncy
0
1
2
3
4
5
6
7
8
Po
wer
dis
sip
atio
n (
W)
48Vin; 30Vbat
power dissipation
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
More Higher input voltage charger:
100Vin_max and 16-cell
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TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
Higher input range solutionIf need a even high voltage, for example: 16 cell battery charger with 80V input. Please update those components and circuits:
Change list:VCC bias supply Current sense
circuitR23(Vbatsetting)
L1 value(Keep ΔIconstant)
Power FET
bq24610EVM(HPA603EVM)
TPS54060 INA169 R23:464k
22uH 80V FET Si7852
80Vin/16cellLi-ion battery Charger
Any 100V input; 10Vout@150mA bias supply
Current mirror:ZDS1009
R23:953k
47uH 100V FET SiR846
Changer requirementOutput Input
bq24610EVM(HPA603EVM)
8-cell Li-ion battery8x4.2=33.6V
Maximum 60V input
80Vin/16cellLi-ion battery Charger
16-cell Li-ion battery16x4.2=67.2V
Maximum 100V input
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
SMBus High voltage charger solution
36
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
SMBus High Voltage Charger Solution
Battery Pack
PVCC
BOOT
UGATE
PHASE
LGATE
VREF
CE
ACOK
Q5
DCIN
Q4
DC Input
SMBUS
Half BridgeGateDrive
UCC27201
Vcc BiasSupply
TPS54060
bq24747
8~14V Vcc
Vcc
Current SenseINA169
2~3V Clamp
BufferLM358
VREF
RsnsL
C
Rs
Pre-chargeDeeply discharged
Battery
BTSTsetting
CSSN
CSSPACINVDDSMB
VICM
ICOUTICREF
GND
CSOP
CSON
SCLSDA
VFB
1MΩ
R9 7.5k
R10 20k
R11 200k
C22 130p
C21 2000p
C23 51p
EAO
EAI
FBO
TI Information – Selective Disclosure2010 Dallas BMS Deep Dive
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•Questions
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