Klystron Modulator R&D at KEK Files... · Blumlein Modulator #l (in Air) Main Parameters Klystron Output power RF pulse width Eficiency Perveance Beam voltage Repetition rate Modultor

Klystron Modulator R&D at KEK

Blumlein Modulator R&D Status

l Modulator modification(Pulse flat-top width to >l.$s)_--_.-_ .- .._- Two parallel Blumlein PFks -_’ -- ‘-

_ .-.. ._~ . .._ -- .-,-..._... 1

- ModificationPulse transformer( 1: 8)Charging transformer

l Modulator test . . _- Pulse width : 3~s- Rise time l -6OOns( lo-90%).- Fall time l -700ns( lo-90%).- Flat-top width : 2jAs(p-p 3%)- Efficiency

Pulse power transfer Eff. : ~75%Waveform Eff. l w74%.

Blumlein Modulator #l(in Air)

Main Parameters

KlystronOutput powerRF pulse widthEficiencyPerveanceBeam voltageRepetition rate

ModultorSec. voltage(Max)Sec. current(Max.)Sec. impedancePulse widthFlat-top widthRise time

Pulse TransformetStep-up ratio

Blumlein PFNPFN impedance/lineNo. of s&tionsInductance/sectionCapacitance/sectionTotal capacitanceCharging Voltage

Tlwra tronAnode voltageAnode current

unit

MW 127 127PS 0.4 1.5% 45 45

~LAIV”~ 1.2 1.2kV 560 560PPS 50 50

kV 560 560A 503 503i2 1113 111311s 0.8 2.411s 0.4 1.511s 350 400

1% 1:8

IR

PHnFnFkV

8.7 17.4(2par.)13 20(2par.)

0.265 1.063.5 3.591 28070 70

kV 70 70kA 8 8

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R&D Program

l Components R&D- Solid state switches- Energy storage capacitors- Pulse transformer

l Modulator Analvsis- Efficiencv- PFN design

l Modulator Layout- Size- Components arrangement

Solid State SI-Thyristor(under development)

l High on current (Peak current of >lOkA?)

l High hold-off voltage (5kV)

l Fast Turn on and Turn off (di/dt of > SOkA/ps?)

l Low switching losses(?)

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PULSED POWER DEVICES

High Power Fast STATIC INDUCTION THYRISTOR

Featuresl.Very small turn-on delay time2. Optimized for series connection3.Snubberless operation4.Optimized for low gate impedance and on-gate drive5.Very high EM1 immunity6.Low on-state and switching losses7.Available for high repetition rate operation&Reverse conducting type (including freewheeling diode: SIED) ‘.S.Press-pack ceramic housinglO.High reliability

NGK INSULATOR,LTD.,2-56 Suda-cho,Mizuho-ku,Nagoya,467-8530 JapanTel:+81-52-872-7097, Fax:+Bl-52-872-7499, E-mail : nshimizu@ngk.co.jp

Performanc_

Item

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PULSED POWER DEVICES

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3okAl75 lLs~55kALuS

125°CRepetitiveCooling for repetitiveswitching is required

3okN0.73kg

&025”c/Wo.o35”c/w

2 center holesQ 3.2kO.151.5&0.2 deep

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RS 1600PA55Tl

5500v0.85vDRM

3okfU75 ,usL68kAlll s

125°CRepetitive

Cooling for repetitiveswitching is required

3okN0.73kg

O.O25=‘C/W0.035”c /w

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Symbol

Hk

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K = Cathode

G = Gate

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Hk = Auxiliary Cathode

Dimensions in mm

NGK INSULATORS, LTD.

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return conductorGND electrode

fHV electrode SI thyristor

Fig.1 The schematic view of the testing circuit.

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Fig.2 The equivalent circuit ofthe testing apparatus.

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SH-type capacitor for PFNKEK&Nichicon Corporation

Energy Density (D)

D w=LE2q-- - [J/d]v 2

W :Stored Energy(J)V :Case Volume(m3)& :Dielectric constant(F/m)

E=EoEr,Eo=8.84xl o-l2F/mE :Electric field strength(V/m)

r\ :Packing factor

NH-type: E-6OV/pm, D-9kJ/m3

SH-type: E-13OV/pm, D-19kJ/m3

Schedule:

l)Life test under operation

2)Low inductance and more compact sizeNo bushing capacitor with plastic case

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Capacitor construction

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