Fe+O ion implantation, Younes Sina

Influence of oxygen ion implantation on the damage and annealing kinetics of iron –implanted sapphire

Carl J. McHarge, John D. Hunn, E. Alves, M.F. da Silva, J.C. Soares

Presentation by: Younes Sina, Uk huh

Fe+

O+Annealing

α-Al203 α-Al203

00010001

Al-Fe-O pseudo-binary section in air along the Fe2O3-Al2O3 join

Al2O3 and Fe2O3 are soluble in each other to 5-10% at 1100 ⁰C

(AlxFe1-x)2 O3

A solid solution in form of (AlxFe1-x)2 O3 may form during the oxygen implantation

FeAl204

Fe1-x0

α-Al203

Annealing for 120 hr @ 1500⁰C

O2

No residual polishing damageNo surface contamination

160 keV Fe+

54 keV O+

4x1016 Fe+/cm2 4x1016 O+/cm2

Annealing

1 hr @ 1500⁰C 800 1200 1500

Ar-4%H2

O2

Fe:O→1:1

Incident beam direction 5-7⁰ from crystal axes

α-Al203 α-Al203

00010001

4x1016 Fe+/cm2 6x1016 O+/cm2

Annealing

1 hr @ 1500⁰C 800 1200 1500

Ar-4%H2

O2

Fe:O→2:3

160 keV Fe+

54 keV O+

Incident beam direction 5-7⁰ from crystal axes

Residual damage(χ) by RBS-ion channelingOf 1.6 MeV He+

Temperature

Fe 4:4 4:6 Fe 4:4 4:6

500 0.9 0.89 0.88 0.9 0.89 0.89

800 0.2 0.19 0.26 0.53 0.19 0.22

1200 0.19 0.10 0.13 0.14 0.08 0.05

1500 0.05 - 0.05 - -

Oxidizing Reduction

Fraction damage remaining after annealing

10.58

0.6

0.62

0.64

0.66

0.68

0.7

0.680000000000001

0.62 0.62

Fe 4Fe:4O 4Fe:6O

Damage( χ)

Oxygen enhances dynamic recovery during implantation

Fe 4Fe:4O 4Fe:6O0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Total deposited damage energySD

4x1016 Fe+/cm2 4&6x1016 O+/cm2

160 keV Fe+

54 keV O+

disorder @1 > disorder@2

1 2

4:6

4:4Fe

O2

Recovery of disorder in Al- sublattice during post-implantation annealing

4:4

Fe

4:6

Recovery of disorder in Al- sublattice during post-implantation annealing

Ar-4%H2

significant slow rate

Iron spectra for 4Fe:4O annealed in air

O2

no shift in the position of the peak

5% iron was lost from the implanted zone

Iron spectra for 4Fe:4O annealed in Ar-4%H2

Ar-4%H2

no iron was lost from the implanted zone

no shift in the position of the peak

Some iron diffuses into and toward the surface of the sapphire during 1200⁰C annealing

Iron spectra for 4Fe:6O annealed in air

O2

no iron was lost from the implanted zone

no shift in the position of the peak

Iron spectra for 4Fe:6O annealed in Ar-4%H2

Ar-4%H2

no iron was lost from the implanted zone

no shift in the position of the peak

Crystal Damage

1500 Å

Fe

Annealing

Fe toward the surface

Reasons for reducing disorder:1. In situ compound formation2. Implanted oxygen replacing oxygen displaced by knock-ons

Oxygen implanted after the iron annihilates these vacancies causing the iron to precipitate

Fe2+ presents as iron –oxygen vacancy cluster

Thank you

Kurdistan, Iran