Carbon Nanotubes as Injection Electrodes for TFTs
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Carbon Nanotubes as Injection Electrodes for TFTsKevin Wang Nanofabrication Seminar2008/4/27
Concept
Aguirre, C.M., Martel, R. et al. Engineering Physics, EP Montréal Chemistry, U. of Montréal
Backgated Pentacene
Island Thin Film
Fabrication – Island
Double-wall nanotubes Form gaps - electrical breakdown
Contacts – optical lithography Ti and Pd by e-beam evaporation Anneal (vacuum) 550°C, 1h
Post-Breakdown
Fabrication – Island (cont.) Spin-coat precursor
2 mg/mL chloroform solution 13,6-N-sulfinylacetamido-
pentacene Converts to pentacene
(170-200°C)
Asymmetric CNT – Pd
Fabrication – TFT
SWNTs (10 nanotubes/μm2)
Ti contacts, optical Lithography, liftoff Sonicate free nanotubes Anneal (vacuum) 550°C, 1h
Pentacene (50nm) Vacuum sublimation (0.2nm/s)
Fabrication – TFT (cont.)
W/L = 200μm/20μm Au or Ti, 30 nm thick
Performance – Island
40 nm gap device Ion/Ioff = 100 Ion = 2nA (Vds = 8V)
Superlinear IV Poor gate control tox = 20 nm
Subthreshold Swing 1.3V/dec
Asymmetric CNT-Pd
Injection from CNT side 21x more current CNT good emitter, poor collector?
Performance - TFT
CNT array – ideal linear behavior Au, Ti – nonlinear, large contact
barriers
Barrier at CNTlowered by E-field enhancement Molecular energy shift
Performance – TFT (cont.)
Conclusion
Carbon nanotubes enhance transistor current
Effective barrier lowering at CNT-Pentacene interface
Additional
Ti contacts
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