Application of heavy charged particle spectrometry

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Application of heavy charged particle spectrometry. 1) Identification of superheavy elements by means of alpha decay sequence 2) Study of hot and dense nuclear matter by means of charged particle spectrometry. Heavy ion collision with ultrarelativistic energy. - PowerPoint PPT Presentation

Transcript

Application of heavy charged particle spectrometry

1) Identification of superheavy elements by means of alpha decay sequence

2) Study of hot and dense nuclear matter by means of charged particle spectrometry

Table of isotopes in the range of superheavy elementsHeavy ion collision with ultrarelativistic energy

Problem very small cross-sections production only single nuclei ndash necessary unambiguous identification

Energy 1) sufficient for overcoming of Coulomb barrier 2) as small as possible to obtain ldquorelatively stableldquo compound nucleus

Decay of alpha decay sequence rarr alpha particles contain information about energy differences between following nuclei

Production possibilities 1) Neutron capture ndash up to Z = 100 (earlier decay then neutron capture) 2) Reaction of light nucleus on heavy target 3) bdquoColdldquo fusion of heavy nucleus ndash projectile A ~ 40 EEX ~ 10 MeV 4) bdquoHotldquo fusion of heavy nucleus ndash usage of 48Ca (Z = 20) EEX ~ 40 MeV

Production of superheavy elements

Drop model 1) stability decreases with increasing proton number 2) excess of neutrons increases with increasing proton number

Existence of bdquomore stableldquo superheavy elements made possible by existence of magic numbers - shell structure harr shell model

Competition of volume energy (strong nuclear interaction) and coulomb energy

Stability island ndash Z = 114 and N = 184 ndash depends on potential form significant uncertainty

Detection of superheavy elements at GSI Darmstadt

Identification of single cases of superheavy element production and decay

1) Capture of all alpha from decay sequence and determination of their energy2) Identification of fission

ptp

pCM v

mm

mv

Velocity filter

Electric deflectors and dipole magnets

Fel = qE Fmag = qvB

Choice of incurred compound nucleus

Right choice E a B for vCM is FTOT = Fel ndash Fmag = 0

dipole magnets

electric deflectors

TOF

rotatedtarget

quadrupole magnets

Stopping of beam

svazek

SHIP device

Elements 107 ndash 112 device SHIP at GSI Darmstadt fusion reaction on Pb Bi nuclei usage of separation separation of compound nucleus implantation to active volume of detector and identification by means of alpha decay sequences

Rotated target (Pb Bi) low thaw pointintensive beam ndash 1012 nucleis

TOF spectrometer

Suppression of residual background

Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates

Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am

Efficiency 998 resolution 700 ps

Coverage 80 of 2π

HPGe detectors ndash photons from deexcitation of excited nuclei

transition detectory

stop detector(silicon)

Cross sections až ~ pb single nucleus per tens days

Very intensive beams during many months

107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium

Fusion per low energies

Results from GSI confirmed also by Japanese laboratory RIKEN

First identified decays of named element with present second highest Z

Further ndash fusion by means of higher energies

(112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK

Reaction 48Ca + 244Pu rarr Z = 114 A = 292

Excitation function for C+Pu reaction

Map of superheavy elements

Cold fusion

Hot fusion Stability island

Neutron number

Pro

ton

nu

mb

er

108 Hassium ndash one from last element chemically studied

Oxid of ruthenium RuO4

Oxid of osmium OsO4

Oxid of hassium HsO4

Chemical analysis of single atoms

Nucleus decays early than new is produced

Study of volatility rarr oxides of VIII group are very volatile

Known isotopes of hassium

First produced hassium nucleus

Production of more stable Hs isotopes

Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

Hs with A ~ 288 will be maybe very stable

Nucleon Decaynumber halftime

only elements in this column can be octavalent

Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

Study of hot and dense nuclear matter by means of charged particles production

Effort to build 4π detectors of charged particles

Example of FOPI spectrometer at GSI Darmstadt

Determination of nuclear matter temperature ndash spectrum

Scheme of FOPI spectrometer

Display of event detected by FOPI spectrometer

Spectrometer of charged particles FOPI

Relativistic heavy ion collisionsrarrBig number of produced charged particles

Determination of pressure ndash particle collective flow

Determination of nuclear matterequation of state

2y

2x

2222T ppcmcm Introduction of transfer mass mT

and rapidity y

z

z

pcE

pcE

ln2

1y and then

cos1

cos1ln

2

1

cosmvmc

cosmvmcln

2

1y

Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

Two Arm Photon Spectrometer

Detection of gamma neutrons and charged particles

384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

cooperation with TOF plastic wall

- collision characteristic

Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

Collective flow of nucleons

N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

Bounce off particles to the Reaction plane

Squeeze out of particles perpendicular to reaction plane

Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

Dependence of collective flows on rapidity (origin of nukleons)

Target region Collision region Target region Projectile region

Application at material research - scattering channeling ion reaction

Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

Usage ions for modification and studies of structure of surface layers of solid materials

Different types of silicon semiconductor detectors of charged particles

Usage of ion accelerators for relatively low energies in the range from keV up to MeV

Spectrometers of charged nuclei ndash often semiconductor silicon detectors

RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

ERDA

incident ion

scattered ion

detector

RBS

Elastic scattering ions

incident ion

reflected ion

detector

Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

PIXE ndash (Particle Induced Gamma ray Emission)

Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

Sprockets produced by ion litography method at photoresistive material

Ion implantation ndash modification of surface material layers

Material modification and working

AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

see gamma spectroscopy

  • Slide 1
  • Slide 2
  • Slide 3
  • Slide 4
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Slide 10
  • Slide 11
  • Slide 12
  • Slide 13
  • Slide 14
  • Slide 15

    Problem very small cross-sections production only single nuclei ndash necessary unambiguous identification

    Energy 1) sufficient for overcoming of Coulomb barrier 2) as small as possible to obtain ldquorelatively stableldquo compound nucleus

    Decay of alpha decay sequence rarr alpha particles contain information about energy differences between following nuclei

    Production possibilities 1) Neutron capture ndash up to Z = 100 (earlier decay then neutron capture) 2) Reaction of light nucleus on heavy target 3) bdquoColdldquo fusion of heavy nucleus ndash projectile A ~ 40 EEX ~ 10 MeV 4) bdquoHotldquo fusion of heavy nucleus ndash usage of 48Ca (Z = 20) EEX ~ 40 MeV

    Production of superheavy elements

    Drop model 1) stability decreases with increasing proton number 2) excess of neutrons increases with increasing proton number

    Existence of bdquomore stableldquo superheavy elements made possible by existence of magic numbers - shell structure harr shell model

    Competition of volume energy (strong nuclear interaction) and coulomb energy

    Stability island ndash Z = 114 and N = 184 ndash depends on potential form significant uncertainty

    Detection of superheavy elements at GSI Darmstadt

    Identification of single cases of superheavy element production and decay

    1) Capture of all alpha from decay sequence and determination of their energy2) Identification of fission

    ptp

    pCM v

    mm

    mv

    Velocity filter

    Electric deflectors and dipole magnets

    Fel = qE Fmag = qvB

    Choice of incurred compound nucleus

    Right choice E a B for vCM is FTOT = Fel ndash Fmag = 0

    dipole magnets

    electric deflectors

    TOF

    rotatedtarget

    quadrupole magnets

    Stopping of beam

    svazek

    SHIP device

    Elements 107 ndash 112 device SHIP at GSI Darmstadt fusion reaction on Pb Bi nuclei usage of separation separation of compound nucleus implantation to active volume of detector and identification by means of alpha decay sequences

    Rotated target (Pb Bi) low thaw pointintensive beam ndash 1012 nucleis

    TOF spectrometer

    Suppression of residual background

    Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates

    Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am

    Efficiency 998 resolution 700 ps

    Coverage 80 of 2π

    HPGe detectors ndash photons from deexcitation of excited nuclei

    transition detectory

    stop detector(silicon)

    Cross sections až ~ pb single nucleus per tens days

    Very intensive beams during many months

    107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium

    Fusion per low energies

    Results from GSI confirmed also by Japanese laboratory RIKEN

    First identified decays of named element with present second highest Z

    Further ndash fusion by means of higher energies

    (112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK

    Reaction 48Ca + 244Pu rarr Z = 114 A = 292

    Excitation function for C+Pu reaction

    Map of superheavy elements

    Cold fusion

    Hot fusion Stability island

    Neutron number

    Pro

    ton

    nu

    mb

    er

    108 Hassium ndash one from last element chemically studied

    Oxid of ruthenium RuO4

    Oxid of osmium OsO4

    Oxid of hassium HsO4

    Chemical analysis of single atoms

    Nucleus decays early than new is produced

    Study of volatility rarr oxides of VIII group are very volatile

    Known isotopes of hassium

    First produced hassium nucleus

    Production of more stable Hs isotopes

    Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

    Hs with A ~ 288 will be maybe very stable

    Nucleon Decaynumber halftime

    only elements in this column can be octavalent

    Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

    Study of hot and dense nuclear matter by means of charged particles production

    Effort to build 4π detectors of charged particles

    Example of FOPI spectrometer at GSI Darmstadt

    Determination of nuclear matter temperature ndash spectrum

    Scheme of FOPI spectrometer

    Display of event detected by FOPI spectrometer

    Spectrometer of charged particles FOPI

    Relativistic heavy ion collisionsrarrBig number of produced charged particles

    Determination of pressure ndash particle collective flow

    Determination of nuclear matterequation of state

    2y

    2x

    2222T ppcmcm Introduction of transfer mass mT

    and rapidity y

    z

    z

    pcE

    pcE

    ln2

    1y and then

    cos1

    cos1ln

    2

    1

    cosmvmc

    cosmvmcln

    2

    1y

    Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

    Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

    Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

    Two Arm Photon Spectrometer

    Detection of gamma neutrons and charged particles

    384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

    cooperation with TOF plastic wall

    - collision characteristic

    Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

    Collective flow of nucleons

    N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

    Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

    Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

    A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

    A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

    Bounce off particles to the Reaction plane

    Squeeze out of particles perpendicular to reaction plane

    Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

    Dependence of collective flows on rapidity (origin of nukleons)

    Target region Collision region Target region Projectile region

    Application at material research - scattering channeling ion reaction

    Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

    Usage ions for modification and studies of structure of surface layers of solid materials

    Different types of silicon semiconductor detectors of charged particles

    Usage of ion accelerators for relatively low energies in the range from keV up to MeV

    Spectrometers of charged nuclei ndash often semiconductor silicon detectors

    RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

    RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

    ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

    ERDA

    incident ion

    scattered ion

    detector

    RBS

    Elastic scattering ions

    incident ion

    reflected ion

    detector

    Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

    PIXE ndash (Particle Induced Gamma ray Emission)

    Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

    Sprockets produced by ion litography method at photoresistive material

    Ion implantation ndash modification of surface material layers

    Material modification and working

    AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

    Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

    see gamma spectroscopy

    • Slide 1
    • Slide 2
    • Slide 3
    • Slide 4
    • Slide 5
    • Slide 6
    • Slide 7
    • Slide 8
    • Slide 9
    • Slide 10
    • Slide 11
    • Slide 12
    • Slide 13
    • Slide 14
    • Slide 15

      Detection of superheavy elements at GSI Darmstadt

      Identification of single cases of superheavy element production and decay

      1) Capture of all alpha from decay sequence and determination of their energy2) Identification of fission

      ptp

      pCM v

      mm

      mv

      Velocity filter

      Electric deflectors and dipole magnets

      Fel = qE Fmag = qvB

      Choice of incurred compound nucleus

      Right choice E a B for vCM is FTOT = Fel ndash Fmag = 0

      dipole magnets

      electric deflectors

      TOF

      rotatedtarget

      quadrupole magnets

      Stopping of beam

      svazek

      SHIP device

      Elements 107 ndash 112 device SHIP at GSI Darmstadt fusion reaction on Pb Bi nuclei usage of separation separation of compound nucleus implantation to active volume of detector and identification by means of alpha decay sequences

      Rotated target (Pb Bi) low thaw pointintensive beam ndash 1012 nucleis

      TOF spectrometer

      Suppression of residual background

      Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates

      Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am

      Efficiency 998 resolution 700 ps

      Coverage 80 of 2π

      HPGe detectors ndash photons from deexcitation of excited nuclei

      transition detectory

      stop detector(silicon)

      Cross sections až ~ pb single nucleus per tens days

      Very intensive beams during many months

      107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium

      Fusion per low energies

      Results from GSI confirmed also by Japanese laboratory RIKEN

      First identified decays of named element with present second highest Z

      Further ndash fusion by means of higher energies

      (112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK

      Reaction 48Ca + 244Pu rarr Z = 114 A = 292

      Excitation function for C+Pu reaction

      Map of superheavy elements

      Cold fusion

      Hot fusion Stability island

      Neutron number

      Pro

      ton

      nu

      mb

      er

      108 Hassium ndash one from last element chemically studied

      Oxid of ruthenium RuO4

      Oxid of osmium OsO4

      Oxid of hassium HsO4

      Chemical analysis of single atoms

      Nucleus decays early than new is produced

      Study of volatility rarr oxides of VIII group are very volatile

      Known isotopes of hassium

      First produced hassium nucleus

      Production of more stable Hs isotopes

      Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

      Hs with A ~ 288 will be maybe very stable

      Nucleon Decaynumber halftime

      only elements in this column can be octavalent

      Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

      Study of hot and dense nuclear matter by means of charged particles production

      Effort to build 4π detectors of charged particles

      Example of FOPI spectrometer at GSI Darmstadt

      Determination of nuclear matter temperature ndash spectrum

      Scheme of FOPI spectrometer

      Display of event detected by FOPI spectrometer

      Spectrometer of charged particles FOPI

      Relativistic heavy ion collisionsrarrBig number of produced charged particles

      Determination of pressure ndash particle collective flow

      Determination of nuclear matterequation of state

      2y

      2x

      2222T ppcmcm Introduction of transfer mass mT

      and rapidity y

      z

      z

      pcE

      pcE

      ln2

      1y and then

      cos1

      cos1ln

      2

      1

      cosmvmc

      cosmvmcln

      2

      1y

      Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

      Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

      Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

      Two Arm Photon Spectrometer

      Detection of gamma neutrons and charged particles

      384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

      cooperation with TOF plastic wall

      - collision characteristic

      Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

      Collective flow of nucleons

      N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

      Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

      Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

      A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

      A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

      Bounce off particles to the Reaction plane

      Squeeze out of particles perpendicular to reaction plane

      Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

      Dependence of collective flows on rapidity (origin of nukleons)

      Target region Collision region Target region Projectile region

      Application at material research - scattering channeling ion reaction

      Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

      Usage ions for modification and studies of structure of surface layers of solid materials

      Different types of silicon semiconductor detectors of charged particles

      Usage of ion accelerators for relatively low energies in the range from keV up to MeV

      Spectrometers of charged nuclei ndash often semiconductor silicon detectors

      RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

      RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

      ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

      ERDA

      incident ion

      scattered ion

      detector

      RBS

      Elastic scattering ions

      incident ion

      reflected ion

      detector

      Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

      PIXE ndash (Particle Induced Gamma ray Emission)

      Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

      Sprockets produced by ion litography method at photoresistive material

      Ion implantation ndash modification of surface material layers

      Material modification and working

      AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

      Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

      see gamma spectroscopy

      • Slide 1
      • Slide 2
      • Slide 3
      • Slide 4
      • Slide 5
      • Slide 6
      • Slide 7
      • Slide 8
      • Slide 9
      • Slide 10
      • Slide 11
      • Slide 12
      • Slide 13
      • Slide 14
      • Slide 15

        TOF spectrometer

        Suppression of residual background

        Start ndash transition detectors thin carbon foils (electron production) and mikrochannel plates

        Stop ndash 16 silicon strip detectors ΔE = 14 keV for alpha from 241Am

        Efficiency 998 resolution 700 ps

        Coverage 80 of 2π

        HPGe detectors ndash photons from deexcitation of excited nuclei

        transition detectory

        stop detector(silicon)

        Cross sections až ~ pb single nucleus per tens days

        Very intensive beams during many months

        107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium

        Fusion per low energies

        Results from GSI confirmed also by Japanese laboratory RIKEN

        First identified decays of named element with present second highest Z

        Further ndash fusion by means of higher energies

        (112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK

        Reaction 48Ca + 244Pu rarr Z = 114 A = 292

        Excitation function for C+Pu reaction

        Map of superheavy elements

        Cold fusion

        Hot fusion Stability island

        Neutron number

        Pro

        ton

        nu

        mb

        er

        108 Hassium ndash one from last element chemically studied

        Oxid of ruthenium RuO4

        Oxid of osmium OsO4

        Oxid of hassium HsO4

        Chemical analysis of single atoms

        Nucleus decays early than new is produced

        Study of volatility rarr oxides of VIII group are very volatile

        Known isotopes of hassium

        First produced hassium nucleus

        Production of more stable Hs isotopes

        Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

        Hs with A ~ 288 will be maybe very stable

        Nucleon Decaynumber halftime

        only elements in this column can be octavalent

        Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

        Study of hot and dense nuclear matter by means of charged particles production

        Effort to build 4π detectors of charged particles

        Example of FOPI spectrometer at GSI Darmstadt

        Determination of nuclear matter temperature ndash spectrum

        Scheme of FOPI spectrometer

        Display of event detected by FOPI spectrometer

        Spectrometer of charged particles FOPI

        Relativistic heavy ion collisionsrarrBig number of produced charged particles

        Determination of pressure ndash particle collective flow

        Determination of nuclear matterequation of state

        2y

        2x

        2222T ppcmcm Introduction of transfer mass mT

        and rapidity y

        z

        z

        pcE

        pcE

        ln2

        1y and then

        cos1

        cos1ln

        2

        1

        cosmvmc

        cosmvmcln

        2

        1y

        Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

        Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

        Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

        Two Arm Photon Spectrometer

        Detection of gamma neutrons and charged particles

        384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

        cooperation with TOF plastic wall

        - collision characteristic

        Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

        Collective flow of nucleons

        N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

        Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

        Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

        A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

        A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

        Bounce off particles to the Reaction plane

        Squeeze out of particles perpendicular to reaction plane

        Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

        Dependence of collective flows on rapidity (origin of nukleons)

        Target region Collision region Target region Projectile region

        Application at material research - scattering channeling ion reaction

        Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

        Usage ions for modification and studies of structure of surface layers of solid materials

        Different types of silicon semiconductor detectors of charged particles

        Usage of ion accelerators for relatively low energies in the range from keV up to MeV

        Spectrometers of charged nuclei ndash often semiconductor silicon detectors

        RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

        RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

        ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

        ERDA

        incident ion

        scattered ion

        detector

        RBS

        Elastic scattering ions

        incident ion

        reflected ion

        detector

        Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

        PIXE ndash (Particle Induced Gamma ray Emission)

        Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

        Sprockets produced by ion litography method at photoresistive material

        Ion implantation ndash modification of surface material layers

        Material modification and working

        AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

        Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

        see gamma spectroscopy

        • Slide 1
        • Slide 2
        • Slide 3
        • Slide 4
        • Slide 5
        • Slide 6
        • Slide 7
        • Slide 8
        • Slide 9
        • Slide 10
        • Slide 11
        • Slide 12
        • Slide 13
        • Slide 14
        • Slide 15

          107 Bh Bohrium108 Hs Hassium109 Mt Meitnerium110 Dm Darmstadtiumu111 Rg Roentgenium112 Cp Copernicium

          Fusion per low energies

          Results from GSI confirmed also by Japanese laboratory RIKEN

          First identified decays of named element with present second highest Z

          Further ndash fusion by means of higher energies

          (112 113 114 115 116 117 118)Problem ndash sequence ends by unknown isotopes rather long decay time (problem with identification by means of coincidences) Year 2006 ndash join ndash looks OK

          Reaction 48Ca + 244Pu rarr Z = 114 A = 292

          Excitation function for C+Pu reaction

          Map of superheavy elements

          Cold fusion

          Hot fusion Stability island

          Neutron number

          Pro

          ton

          nu

          mb

          er

          108 Hassium ndash one from last element chemically studied

          Oxid of ruthenium RuO4

          Oxid of osmium OsO4

          Oxid of hassium HsO4

          Chemical analysis of single atoms

          Nucleus decays early than new is produced

          Study of volatility rarr oxides of VIII group are very volatile

          Known isotopes of hassium

          First produced hassium nucleus

          Production of more stable Hs isotopes

          Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

          Hs with A ~ 288 will be maybe very stable

          Nucleon Decaynumber halftime

          only elements in this column can be octavalent

          Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

          Study of hot and dense nuclear matter by means of charged particles production

          Effort to build 4π detectors of charged particles

          Example of FOPI spectrometer at GSI Darmstadt

          Determination of nuclear matter temperature ndash spectrum

          Scheme of FOPI spectrometer

          Display of event detected by FOPI spectrometer

          Spectrometer of charged particles FOPI

          Relativistic heavy ion collisionsrarrBig number of produced charged particles

          Determination of pressure ndash particle collective flow

          Determination of nuclear matterequation of state

          2y

          2x

          2222T ppcmcm Introduction of transfer mass mT

          and rapidity y

          z

          z

          pcE

          pcE

          ln2

          1y and then

          cos1

          cos1ln

          2

          1

          cosmvmc

          cosmvmcln

          2

          1y

          Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

          Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

          Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

          Two Arm Photon Spectrometer

          Detection of gamma neutrons and charged particles

          384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

          cooperation with TOF plastic wall

          - collision characteristic

          Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

          Collective flow of nucleons

          N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

          Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

          Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

          A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

          A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

          Bounce off particles to the Reaction plane

          Squeeze out of particles perpendicular to reaction plane

          Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

          Dependence of collective flows on rapidity (origin of nukleons)

          Target region Collision region Target region Projectile region

          Application at material research - scattering channeling ion reaction

          Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

          Usage ions for modification and studies of structure of surface layers of solid materials

          Different types of silicon semiconductor detectors of charged particles

          Usage of ion accelerators for relatively low energies in the range from keV up to MeV

          Spectrometers of charged nuclei ndash often semiconductor silicon detectors

          RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

          RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

          ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

          ERDA

          incident ion

          scattered ion

          detector

          RBS

          Elastic scattering ions

          incident ion

          reflected ion

          detector

          Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

          PIXE ndash (Particle Induced Gamma ray Emission)

          Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

          Sprockets produced by ion litography method at photoresistive material

          Ion implantation ndash modification of surface material layers

          Material modification and working

          AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

          Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

          see gamma spectroscopy

          • Slide 1
          • Slide 2
          • Slide 3
          • Slide 4
          • Slide 5
          • Slide 6
          • Slide 7
          • Slide 8
          • Slide 9
          • Slide 10
          • Slide 11
          • Slide 12
          • Slide 13
          • Slide 14
          • Slide 15

            Map of superheavy elements

            Cold fusion

            Hot fusion Stability island

            Neutron number

            Pro

            ton

            nu

            mb

            er

            108 Hassium ndash one from last element chemically studied

            Oxid of ruthenium RuO4

            Oxid of osmium OsO4

            Oxid of hassium HsO4

            Chemical analysis of single atoms

            Nucleus decays early than new is produced

            Study of volatility rarr oxides of VIII group are very volatile

            Known isotopes of hassium

            First produced hassium nucleus

            Production of more stable Hs isotopes

            Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

            Hs with A ~ 288 will be maybe very stable

            Nucleon Decaynumber halftime

            only elements in this column can be octavalent

            Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

            Study of hot and dense nuclear matter by means of charged particles production

            Effort to build 4π detectors of charged particles

            Example of FOPI spectrometer at GSI Darmstadt

            Determination of nuclear matter temperature ndash spectrum

            Scheme of FOPI spectrometer

            Display of event detected by FOPI spectrometer

            Spectrometer of charged particles FOPI

            Relativistic heavy ion collisionsrarrBig number of produced charged particles

            Determination of pressure ndash particle collective flow

            Determination of nuclear matterequation of state

            2y

            2x

            2222T ppcmcm Introduction of transfer mass mT

            and rapidity y

            z

            z

            pcE

            pcE

            ln2

            1y and then

            cos1

            cos1ln

            2

            1

            cosmvmc

            cosmvmcln

            2

            1y

            Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

            Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

            Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

            Two Arm Photon Spectrometer

            Detection of gamma neutrons and charged particles

            384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

            cooperation with TOF plastic wall

            - collision characteristic

            Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

            Collective flow of nucleons

            N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

            Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

            Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

            A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

            A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

            Bounce off particles to the Reaction plane

            Squeeze out of particles perpendicular to reaction plane

            Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

            Dependence of collective flows on rapidity (origin of nukleons)

            Target region Collision region Target region Projectile region

            Application at material research - scattering channeling ion reaction

            Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

            Usage ions for modification and studies of structure of surface layers of solid materials

            Different types of silicon semiconductor detectors of charged particles

            Usage of ion accelerators for relatively low energies in the range from keV up to MeV

            Spectrometers of charged nuclei ndash often semiconductor silicon detectors

            RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

            RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

            ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

            ERDA

            incident ion

            scattered ion

            detector

            RBS

            Elastic scattering ions

            incident ion

            reflected ion

            detector

            Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

            PIXE ndash (Particle Induced Gamma ray Emission)

            Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

            Sprockets produced by ion litography method at photoresistive material

            Ion implantation ndash modification of surface material layers

            Material modification and working

            AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

            Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

            see gamma spectroscopy

            • Slide 1
            • Slide 2
            • Slide 3
            • Slide 4
            • Slide 5
            • Slide 6
            • Slide 7
            • Slide 8
            • Slide 9
            • Slide 10
            • Slide 11
            • Slide 12
            • Slide 13
            • Slide 14
            • Slide 15

              108 Hassium ndash one from last element chemically studied

              Oxid of ruthenium RuO4

              Oxid of osmium OsO4

              Oxid of hassium HsO4

              Chemical analysis of single atoms

              Nucleus decays early than new is produced

              Study of volatility rarr oxides of VIII group are very volatile

              Known isotopes of hassium

              First produced hassium nucleus

              Production of more stable Hs isotopes

              Narrow channel with decreasing temperature from -20oC up to -170oC rarr the more volatile the further molecules will flight before adsorption

              Hs with A ~ 288 will be maybe very stable

              Nucleon Decaynumber halftime

              only elements in this column can be octavalent

              Element density [gcm3] melting point [oC] boiling point [oC] stiffness [Mohs]

              Study of hot and dense nuclear matter by means of charged particles production

              Effort to build 4π detectors of charged particles

              Example of FOPI spectrometer at GSI Darmstadt

              Determination of nuclear matter temperature ndash spectrum

              Scheme of FOPI spectrometer

              Display of event detected by FOPI spectrometer

              Spectrometer of charged particles FOPI

              Relativistic heavy ion collisionsrarrBig number of produced charged particles

              Determination of pressure ndash particle collective flow

              Determination of nuclear matterequation of state

              2y

              2x

              2222T ppcmcm Introduction of transfer mass mT

              and rapidity y

              z

              z

              pcE

              pcE

              ln2

              1y and then

              cos1

              cos1ln

              2

              1

              cosmvmc

              cosmvmcln

              2

              1y

              Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

              Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

              Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

              Two Arm Photon Spectrometer

              Detection of gamma neutrons and charged particles

              384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

              cooperation with TOF plastic wall

              - collision characteristic

              Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

              Collective flow of nucleons

              N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

              Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

              Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

              A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

              A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

              Bounce off particles to the Reaction plane

              Squeeze out of particles perpendicular to reaction plane

              Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

              Dependence of collective flows on rapidity (origin of nukleons)

              Target region Collision region Target region Projectile region

              Application at material research - scattering channeling ion reaction

              Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

              Usage ions for modification and studies of structure of surface layers of solid materials

              Different types of silicon semiconductor detectors of charged particles

              Usage of ion accelerators for relatively low energies in the range from keV up to MeV

              Spectrometers of charged nuclei ndash often semiconductor silicon detectors

              RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

              RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

              ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

              ERDA

              incident ion

              scattered ion

              detector

              RBS

              Elastic scattering ions

              incident ion

              reflected ion

              detector

              Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

              PIXE ndash (Particle Induced Gamma ray Emission)

              Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

              Sprockets produced by ion litography method at photoresistive material

              Ion implantation ndash modification of surface material layers

              Material modification and working

              AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

              Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

              see gamma spectroscopy

              • Slide 1
              • Slide 2
              • Slide 3
              • Slide 4
              • Slide 5
              • Slide 6
              • Slide 7
              • Slide 8
              • Slide 9
              • Slide 10
              • Slide 11
              • Slide 12
              • Slide 13
              • Slide 14
              • Slide 15

                Study of hot and dense nuclear matter by means of charged particles production

                Effort to build 4π detectors of charged particles

                Example of FOPI spectrometer at GSI Darmstadt

                Determination of nuclear matter temperature ndash spectrum

                Scheme of FOPI spectrometer

                Display of event detected by FOPI spectrometer

                Spectrometer of charged particles FOPI

                Relativistic heavy ion collisionsrarrBig number of produced charged particles

                Determination of pressure ndash particle collective flow

                Determination of nuclear matterequation of state

                2y

                2x

                2222T ppcmcm Introduction of transfer mass mT

                and rapidity y

                z

                z

                pcE

                pcE

                ln2

                1y and then

                cos1

                cos1ln

                2

                1

                cosmvmc

                cosmvmcln

                2

                1y

                Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

                Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

                Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

                Two Arm Photon Spectrometer

                Detection of gamma neutrons and charged particles

                384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

                cooperation with TOF plastic wall

                - collision characteristic

                Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

                Collective flow of nucleons

                N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

                Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

                Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

                A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

                A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

                Bounce off particles to the Reaction plane

                Squeeze out of particles perpendicular to reaction plane

                Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

                Dependence of collective flows on rapidity (origin of nukleons)

                Target region Collision region Target region Projectile region

                Application at material research - scattering channeling ion reaction

                Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

                Usage ions for modification and studies of structure of surface layers of solid materials

                Different types of silicon semiconductor detectors of charged particles

                Usage of ion accelerators for relatively low energies in the range from keV up to MeV

                Spectrometers of charged nuclei ndash often semiconductor silicon detectors

                RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                ERDA

                incident ion

                scattered ion

                detector

                RBS

                Elastic scattering ions

                incident ion

                reflected ion

                detector

                Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                PIXE ndash (Particle Induced Gamma ray Emission)

                Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                Sprockets produced by ion litography method at photoresistive material

                Ion implantation ndash modification of surface material layers

                Material modification and working

                AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                see gamma spectroscopy

                • Slide 1
                • Slide 2
                • Slide 3
                • Slide 4
                • Slide 5
                • Slide 6
                • Slide 7
                • Slide 8
                • Slide 9
                • Slide 10
                • Slide 11
                • Slide 12
                • Slide 13
                • Slide 14
                • Slide 15

                  2y

                  2x

                  2222T ppcmcm Introduction of transfer mass mT

                  and rapidity y

                  z

                  z

                  pcE

                  pcE

                  ln2

                  1y and then

                  cos1

                  cos1ln

                  2

                  1

                  cosmvmc

                  cosmvmcln

                  2

                  1y

                  Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

                  Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

                  Identification of charged particlesSpectra of charged particles (Ni+Ni a Au+Au experiments with beam energy 1 GeVA)

                  Two Arm Photon Spectrometer

                  Detection of gamma neutrons and charged particles

                  384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

                  cooperation with TOF plastic wall

                  - collision characteristic

                  Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

                  Collective flow of nucleons

                  N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

                  Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

                  Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

                  A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

                  A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

                  Bounce off particles to the Reaction plane

                  Squeeze out of particles perpendicular to reaction plane

                  Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

                  Dependence of collective flows on rapidity (origin of nukleons)

                  Target region Collision region Target region Projectile region

                  Application at material research - scattering channeling ion reaction

                  Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

                  Usage ions for modification and studies of structure of surface layers of solid materials

                  Different types of silicon semiconductor detectors of charged particles

                  Usage of ion accelerators for relatively low energies in the range from keV up to MeV

                  Spectrometers of charged nuclei ndash often semiconductor silicon detectors

                  RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                  RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                  ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                  ERDA

                  incident ion

                  scattered ion

                  detector

                  RBS

                  Elastic scattering ions

                  incident ion

                  reflected ion

                  detector

                  Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                  PIXE ndash (Particle Induced Gamma ray Emission)

                  Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                  Sprockets produced by ion litography method at photoresistive material

                  Ion implantation ndash modification of surface material layers

                  Material modification and working

                  AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                  Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                  see gamma spectroscopy

                  • Slide 1
                  • Slide 2
                  • Slide 3
                  • Slide 4
                  • Slide 5
                  • Slide 6
                  • Slide 7
                  • Slide 8
                  • Slide 9
                  • Slide 10
                  • Slide 11
                  • Slide 12
                  • Slide 13
                  • Slide 14
                  • Slide 15

                    Two Arm Photon Spectrometer

                    Detection of gamma neutrons and charged particles

                    384 BaF2 detectorswith plastic veto ndash distinguishing of neutral and charged particles

                    cooperation with TOF plastic wall

                    - collision characteristic

                    Beam energy 10 MeV - 200 GeV (GSI Darmstadt KVI GroningenGANIL Caen CERN)

                    Collective flow of nucleons

                    N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

                    Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

                    Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

                    A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

                    A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

                    Bounce off particles to the Reaction plane

                    Squeeze out of particles perpendicular to reaction plane

                    Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

                    Dependence of collective flows on rapidity (origin of nukleons)

                    Target region Collision region Target region Projectile region

                    Application at material research - scattering channeling ion reaction

                    Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

                    Usage ions for modification and studies of structure of surface layers of solid materials

                    Different types of silicon semiconductor detectors of charged particles

                    Usage of ion accelerators for relatively low energies in the range from keV up to MeV

                    Spectrometers of charged nuclei ndash often semiconductor silicon detectors

                    RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                    RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                    ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                    ERDA

                    incident ion

                    scattered ion

                    detector

                    RBS

                    Elastic scattering ions

                    incident ion

                    reflected ion

                    detector

                    Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                    PIXE ndash (Particle Induced Gamma ray Emission)

                    Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                    Sprockets produced by ion litography method at photoresistive material

                    Ion implantation ndash modification of surface material layers

                    Material modification and working

                    AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                    Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                    see gamma spectroscopy

                    • Slide 1
                    • Slide 2
                    • Slide 3
                    • Slide 4
                    • Slide 5
                    • Slide 6
                    • Slide 7
                    • Slide 8
                    • Slide 9
                    • Slide 10
                    • Slide 11
                    • Slide 12
                    • Slide 13
                    • Slide 14
                    • Slide 15

                      Collective flow of nucleons

                      N = N0( 1 + Amiddotcosφ + Bmiddotcos(2middotφ))

                      Relative rapidity YREL = (Y - YPRO2)(YPRO2) YPROJ ndash projectile rapidity

                      Target region YREL -1 Collision region YREL 0 Projectile region YREL +1

                      A ndash magnitude of asymmetry in the collision plane B ndash magnitude of asymmetry perpendicular to it (eliptical flow)

                      A lt 0 B = 0 A = 0 B lt 0 A gt 0 B = 0

                      Bounce off particles to the Reaction plane

                      Squeeze out of particles perpendicular to reaction plane

                      Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

                      Dependence of collective flows on rapidity (origin of nukleons)

                      Target region Collision region Target region Projectile region

                      Application at material research - scattering channeling ion reaction

                      Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

                      Usage ions for modification and studies of structure of surface layers of solid materials

                      Different types of silicon semiconductor detectors of charged particles

                      Usage of ion accelerators for relatively low energies in the range from keV up to MeV

                      Spectrometers of charged nuclei ndash often semiconductor silicon detectors

                      RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                      RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                      ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                      ERDA

                      incident ion

                      scattered ion

                      detector

                      RBS

                      Elastic scattering ions

                      incident ion

                      reflected ion

                      detector

                      Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                      PIXE ndash (Particle Induced Gamma ray Emission)

                      Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                      Sprockets produced by ion litography method at photoresistive material

                      Ion implantation ndash modification of surface material layers

                      Material modification and working

                      AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                      Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                      see gamma spectroscopy

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                        Bounce off particles to the Reaction plane

                        Squeeze out of particles perpendicular to reaction plane

                        Experimental data ndash dependency of collective flow on nucleons number ndash agreement of hydrodynamical models

                        Dependence of collective flows on rapidity (origin of nukleons)

                        Target region Collision region Target region Projectile region

                        Application at material research - scattering channeling ion reaction

                        Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

                        Usage ions for modification and studies of structure of surface layers of solid materials

                        Different types of silicon semiconductor detectors of charged particles

                        Usage of ion accelerators for relatively low energies in the range from keV up to MeV

                        Spectrometers of charged nuclei ndash often semiconductor silicon detectors

                        RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                        RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                        ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                        ERDA

                        incident ion

                        scattered ion

                        detector

                        RBS

                        Elastic scattering ions

                        incident ion

                        reflected ion

                        detector

                        Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                        PIXE ndash (Particle Induced Gamma ray Emission)

                        Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                        Sprockets produced by ion litography method at photoresistive material

                        Ion implantation ndash modification of surface material layers

                        Material modification and working

                        AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                        Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                        see gamma spectroscopy

                        • Slide 1
                        • Slide 2
                        • Slide 3
                        • Slide 4
                        • Slide 5
                        • Slide 6
                        • Slide 7
                        • Slide 8
                        • Slide 9
                        • Slide 10
                        • Slide 11
                        • Slide 12
                        • Slide 13
                        • Slide 14
                        • Slide 15

                          Application at material research - scattering channeling ion reaction

                          Tandetrom 4130 MC at NPI ASCR is used for material research ndash from H up to Au energies from hundreds keV up to tens MeV

                          Usage ions for modification and studies of structure of surface layers of solid materials

                          Different types of silicon semiconductor detectors of charged particles

                          Usage of ion accelerators for relatively low energies in the range from keV up to MeV

                          Spectrometers of charged nuclei ndash often semiconductor silicon detectors

                          RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                          RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                          ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                          ERDA

                          incident ion

                          scattered ion

                          detector

                          RBS

                          Elastic scattering ions

                          incident ion

                          reflected ion

                          detector

                          Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                          PIXE ndash (Particle Induced Gamma ray Emission)

                          Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                          Sprockets produced by ion litography method at photoresistive material

                          Ion implantation ndash modification of surface material layers

                          Material modification and working

                          AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                          Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                          see gamma spectroscopy

                          • Slide 1
                          • Slide 2
                          • Slide 3
                          • Slide 4
                          • Slide 5
                          • Slide 6
                          • Slide 7
                          • Slide 8
                          • Slide 9
                          • Slide 10
                          • Slide 11
                          • Slide 12
                          • Slide 13
                          • Slide 14
                          • Slide 15

                            RBS (Rutheford Backscattering Spectroscopy) - spectrometry of charged pasrticles back scattered by Rutheford scattering ndash layers from nm up to μm ndash spectrometry of scattered ions by semiconductor detectors Change of energy given by momentum change and ionisation losses ndash profiles of impurities distribution materials are determined ndash mainly heavy nuclei

                            RBS channeling ndash channeling of charged particles ndash crystal structures ndash determination of distinctive directions of crystal axes and impurities ndash slight turning of crystal sample

                            ERDA (Elastic Recoil Detection Analysis) ndash detection of atoms knocked on by ions ndash mostly lighter nuclei from hydrogen up to nitrogen ndash possibility of control changes of surface properties ndash study of hydrogen amount at polymers ndash connection with measurement of ion time of flight

                            ERDA

                            incident ion

                            scattered ion

                            detector

                            RBS

                            Elastic scattering ions

                            incident ion

                            reflected ion

                            detector

                            Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                            PIXE ndash (Particle Induced Gamma ray Emission)

                            Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                            Sprockets produced by ion litography method at photoresistive material

                            Ion implantation ndash modification of surface material layers

                            Material modification and working

                            AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                            Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                            see gamma spectroscopy

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                            • Slide 2
                            • Slide 3
                            • Slide 4
                            • Slide 5
                            • Slide 6
                            • Slide 7
                            • Slide 8
                            • Slide 9
                            • Slide 10
                            • Slide 11
                            • Slide 12
                            • Slide 13
                            • Slide 14
                            • Slide 15

                              Ion reaction with nucleiPIGE (Particle Induced Gamma ray Emission)

                              PIXE ndash (Particle Induced Gamma ray Emission)

                              Ion litography and ion beam machining ndash preparing of microelectronical a optoelectronical components and microscopic mechanical devices

                              Sprockets produced by ion litography method at photoresistive material

                              Ion implantation ndash modification of surface material layers

                              Material modification and working

                              AMS ndash accelerator mass spectroscopy ndash impurity of elements with concentration 10-15 ndash often for carbon dating

                              Ion microprobe ndash very narrow and intensive ion beam ndash usage ndash scanning of object surface with micrometer accuracy

                              see gamma spectroscopy

                              • Slide 1
                              • Slide 2
                              • Slide 3
                              • Slide 4
                              • Slide 5
                              • Slide 6
                              • Slide 7
                              • Slide 8
                              • Slide 9
                              • Slide 10
                              • Slide 11
                              • Slide 12
                              • Slide 13
                              • Slide 14
                              • Slide 15

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