A new era in power electronics with Infineon’s CoolGaN™files.iccmedia.com/pdf/2018_powercon/munich1_1100_infineon.pdf · Specific GaN EiceDRIVER™ addresses safety and ease-of-use
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Dr. Gerald DeboySenior Principal Power Discretes and System EngineeringPower management and multimarket division
A new era in power electronicswith Infineon’s CoolGaN™
Infineon will complement each of its leading edge silicon solutions with a wide bandgap technology!
TrenchStop™ to CoolSiC™
SiIGBT
SiCMOSFET
CoolMOS™ to CoolGaN™
SiSuperjunction
GaNHV e-mode lateral HEMT
Collector
Emitter Gate
n- basis (substrate)
OptiMOS™ to CoolGaN™
SiFieldplate
GaNMV e-mode lateral HEMT
22018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Agenda
Infineon‘s wide bandgap strategy
Why GaN? Key characteristics of the technology
Reliability first
Benefits in selected applications
Summary
1
2
4
5
6
Device characteristics of CoolGaN3
32018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
GaN HEMTs are just at the begin of theirtechnology roadmap…
› Todays devices are around one order of magnitude away from theoretical limits; lots of improvement potential is still ahead…
S G D
Unipolar limit:
Superjunction limit:
Source: W. Saito, I. Omura, T. Ogura, H. Ohashi, "Theoretical limit estimation of lateral wideband-gap semiconductor power-switching device“, Solid-State Elec. 48 (2004) 1555–1562
42018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Comparing Qrr of GaN versus Superjunction
GaN HEMT
Superjunction
10 A/div
Reverse Recovery Performance
› Virtually zero reverse recovery charge
› Internal body diode of SJ can be made rugged; Qrr can be reduced by factor 5; snappiness will remain forever…
52018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Wide bandgap power devices enable seamlessshifts between hard and soft switching
Source: D. Neumayr, D. Bortis, E. Hatipoglu, J. Kolar, G. Deboy, “Novel efficiency-optimal frequency modulation for high density converter systems”, Proc. IFEEC, June 2017
62018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Agenda
Infineon‘s wide bandgap strategy
Why GaN? Key characteristics of the technology
Reliability first
Benefits in selected applications
Summary
1
2
4
5
6
Device characteristics of CoolGaN3
72018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
CoolGaN™: eMode-GaN-HEMT on Silicon substrate with p-gate injection technology
Si substrate
› Forward characteristic of gate electrode › Threshold Vth and 2DEG concentration(RDSon*A) can be adjusted independently
82018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Rdson vs Ids characteristic: CoolGaN™ 190 mΩ
0,14
0,16
0,18
0,20
0,22
0,24
0 5 10 15 20 25 30
Rdso
n (O
hms)
ID (A)
27uA
91uA
286uA
975uA
2.975mA
9.74mA
19.84mA0,24
0,28
0,32
0,36
0,40
0,44
0,48
0 5 10 15 20
Rdso
n (O
hms)
ID (A)
26uA
91uA
296uA
983uA
2.92mA
9.65mA
19.84mA
TC = 25C TC = 125C
Rated max pulsed drain current Rated max pulsed drain current
› No significant current saturation effects: specified RDSon is reachableup to rated pulsed drain currents
Rated on-state resistance
92018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Specific GaN EiceDRIVER™ addresses safetyand ease-of-use concerns
True three-state driver, stable negative supply voltage Safe operation of CoolGaN™ switches
2x shorter propagation delay and accuracy Better efficiency
Integrated galvanic isolation, only 1 positive voltage needed Superior BOM and power density
1EDx-G1benefits
Q1
Q3
GNDout
VCCout
Ron Con
IN
Roff
Classic RC-driver
Q2
Iss
Q4bidi
New 1EDx-G1 GaN Driver
VDDin
GNDout
OUTA
OUTB
GNDin
VDDout
IN
1EDF-G1One ChannelGalvanic IsolatedHigh SpeedCoolGaNTM Gate Driver
SLR Config
102018-11-13 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Agenda
Infineon‘s wide bandgap strategy
Why GaN? Key characteristics of the technology
Reliability first
Benefits in selected applications
Summary
1
2
3
4
5
112018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Infineon's CoolGaN™ is normally-off with an intrinsically rugged gate structure
Vgs
Igs Ipk,pos=2.8 A
Vg, peak= +/-10 V
122018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
› As implicated by it‘s name dynamic RDS(on) testing is strongly dependent on timing as trapped charges relax with time
› Competition is typically giving dyn. RDS(on) data measured2.5µs after turn-on for 400 V
› For hundreds of kHz up to MHzoperation this is not enough
› E.g. 40% dyn. RDS(on) turns a35mΩ device into a 50mΩ one
› Infineon‘s CoolGaN™ has beencharacterized down to 100 nsfor a full 600 V blocking withno dyn. RDS(on) increase
› We have 100% test coveragewith 600 V / 700 ns
Dynamic RDS(on): How to test?
Infineon CoolGaN
132018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
-10%
0%
10%
20%
30%
40%
50%
60%
70%
100 200 300 400 500 600
Percent dynamic RDS(on) shift versus applied voltage
Competitor T InfineonApplied voltage (Volts)
Infineon measurement: some competitor parts show increase in dyn. RDS(on) above 400V
Perc
ent
by w
hich
RD
S(o
n) s
hift
s
Published data for Competitor listed as 0% up to 400V (no data > 400V)
CoolGaN™ 600 V technology reliabilitydynamic RDS(on) - Application level test example
Dyn. RDS(on) measured real time during hard switching! At full rate.
True application measurements taken a few hundreds ns after hard switching device turn on! No impacts on datasheet!
negligible shift at full rated voltage
Data taken at 25°C, with 700 ns delay after device
turns on
142018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
HTRB modelling shows superior intrinsic quality of CoolGaN™!
Lifetime model
› The acceleration model is developed for voltage and temperature › The predicted lifetime is ~55 years @ 480 V and 125°C, which exceeds
typical use cases by factor 3› 3 times higher safety margin from Infineon's criteria
CoolGaN™Life time = 55 years
Lifetime requirement:< 1 fit for 15 yearsat 480 V, 125°C(100 ppm)
JEDEC testing 3 x 77 parts, 480 V, 1000 h
152018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
From application-related reliability testingto testing reliability in the real application
› According to IPC9592 Rev.B (Requirements for power conversion devices for the computer and telecommunications industries)
› Standard duration 1000 h at maximum allowed ambient temperature of 50°C
› The GaN PFC stage is stressed at high input voltage, 264 VAC and at low input voltage, 200 VAC
› HTOB testing was done on 150 rectifiers
› 2000 h extended test passed without failures!
HTOB system of our customer for up to48 rectifiers/converters, up to 144 kW
Full power supply reliability testing procedure performed by one of our lead customers
162018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Agenda
Infineon‘s wide bandgap strategy
Why GaN? Key characteristics of the technology
Reliability first
Benefits in selected applications
Summary
1
2
3
4
5
172018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
CoolGaN™ 600 V + GaN EiceDRIVER™Featured applications
› Highest efficiency > 97.5%› Cost savings (OPEX, CAPEX, BOM)
› Highest efficiency > 97.5%› Cost savings (OPEX, CAPEX, BOM)
› CoolGaN™ 600 V - low QG and COSS enable high efficiency at higher power levels
› GaN enables optimal tuning in class E designs especially for solutions > 30W
› Breakthrough in power density for small and lightweight, highly efficient solutions
Server Datacenters
Telecom
Wireless charging
ChargerAdapter
› CoolGaN™ can be used in many other applications and as a general switch** For more information, please visit www.infineon.com/gan.
182018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Optimization of a high-density 3 kW/12V server power supply
› System: 1-Φ, 12V, 3kW, Server power supply
› Topology: Totem-Pole PFC & Half-bridge LLC
› PFC Modulation: CCM for GaN; TCM for TP Si
› Optimization point: 50% load, 230Vrms, 12Vout
192018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
GaN High-Density Optimization Results
› Optimization Results for 50% Load, 230Vin, 12Vout
› The Results include Control Losses, Cooling System, 20% Air between Components, Casing, Connectors, PCB, Manufacturing Cost
Highest Efficiency
Highest Power Density
202018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Topology Selection for 3kW/12V Server Supply
› GaN „Totem-Pole“ PFC with CCM and Large Current Ripple provides Natural ZVS over a Large Part of the Mains Period
› Low RDS,on Si Superjunction in Return Path
› GaN Half-Bridge LLC with Matrix Transformer to Share Output Current Among Multiple Si Sync. Rect. Stages
Input Current at 50% Load
Average Current
Proposed Design Typical Designs
176-265VRMS
212018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Selected Converter Design (80W/inch3)
35mOhm 600V GaN eMode
17mOhm SJ
Main Design Parameters Topology
3D CAD Layout
Calculated Efficiencies
W=68mmL=210mmH=44mm
222018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
Outlook on Advanced DC/DC Converters
› Collaboration with ETH Zürich to develop High Density GaN DC/DC Converter
› PCB Integrated „Snake“ Matrix Transformer for Smallest Volume and Lowest Manufacturing Cost without Circulating Output Currents
› Advanced Phase-Shift and Frequency Control dep. on DC-Link Voltage and Output Power
Source: Knabben et al, “New PCB Winding "Snake-Core" Matrix Transformer for Ultra-Compact Wide DC Input Voltage Range Hybrid B+DCM Resonant Server Power Supply”, PEAC, 2018
Topology Matrix Transformer Transformer Measurements
232018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
› Extensive application / system understanding
› Global design support› Focus on system
performance /cost ratio
› Expertise in all leading power technologies (Si, SiC, GaN)
› Extensive GaN knowhow from both Infineon and International Rectifier
› Large GaN patent portfolio
› GaN product portfolio optimized for specific application requirements
› Application specific reliability testing
› GaN products are offered in SMD packages
› GaN manufacturing embedded into high volume Si lines in Villach
› Typical Infineon quality standards are applied
› Dual source offering withpartner Panasonic
Infineon GaNOur differentiating core competencies
Extensive system expertiseUnique power technology portfolio
Application-dedicated productsBenchmark in manufacturing
242018-12-04 Copyright © Infineon Technologies AG 2018. All rights reserved. Infineon Proprietary
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