Sample Final Solution 01

8/6/2019 Sample Final Solution 01

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ENGINEERING SCIENCES 154

ELECTRONIC DEVICES AND CIRCUITS

SAMPLE FINAL EXAMINATIONFALL TERM 2001-2002

NAME Some Possible Solutions

a. Please answer all of the questions in the spaces provided. If you need additional space,

use the backs of the sheets.

b. Partial credit is achievable, so include all of your calculations and clearly

indicate what you are trying to do .

c. Note that you have modicum of choice in the first question.

d. The relative credit assigned to each question is indicated as a prudent time

allocation. That is, there is a possible total credit of180 .

1. (Prudent time allocation = 90 minutes)

Briefly answer NINE (9) of the following FOURTEEN (14) questions:

a. In the space below, plot the net charge density (sign and magnitude) and the

built-in electric field as a function of position along a line which intersects a pn

homojunction at right angles. The n-side of the junction has a doping level that is 10

times that of the p-side (i.e., ND = 10 NA). Label and/or note important features.

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_2/pn_junction/pn_junction.html#space_charge

cent er of junction

qN(x)

E(x)

Q+

Q-


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SAMPLE FINAL EXAMINATION PAGE-2

b. Suppose that a particular BJT has the following collector current characteristic curve:

Using this characteristic, find the common emitter current gain (CECG) and the

common base current gain (CBCG) of the transistor when it is operated in the

active mode. Also find the Early voltage (VA) of the transistor.

=16.0 10.05( ) mA

50 A=

5.95

50103 120

=

+1=

120

121= 0.992

VA =I 0( )

I Vm( ) I 0( )[ ]Vm =

15.5

16.5 15.5[ ]20 V 310 V


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c. What does the circuit illustrated below do? Explain how it does it..

+

Input analog volt age Out put volt age

- Vc

Vc n-channe l MOSFET

p-channel MOSFET

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_4/mosfet/mos_circuits/mos_circuits.ht

ml#trans_gate

d. A two-part question about operational amplifier offsets

i.) What is meant by the input offset voltage of an op amp? How is it measured?

ii.) What is meant by the input offset current of an op amp?See Section 2.9 Sedra & Smith and Laboratory Assignment 1.


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e. The following circuit has been described as an improved rectifier. Explain.

-V supply

+

+

RL

Vin

VO

-

+

+

VO'

+Vsupply

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_2/diode_circuits/diode_app

l.html#rectifier


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f. For a diode with the characteristic depicted below, calculate the effective or small-signal

resistance at a forward bias of 0.5 volts.

Slope Method:

reff = V I

=0.7 V

155 A= 4.5 k

Analytic Method:

Assume thatI V1( ) = I0 expV

VT1

I0 exp

V

VT

therefore1

reff=

d

dVI0 exp

V

VT

=

I V( )

VTwhere VT =

V1 V2

lnI V1( )

I V2

( )

From graph:I 0.50 V( ) = 45.5 A; I0.66 V( ) =100 A; I 0.76 V( ) = 200 A

VT =V1 V2

lnI V1( )I V2( )

=0.76 0.66

ln200

100

=0.10

.693= 0.144 V

1

reff=

I V( )

VT=

45.5 A144 mV

=1

3.2 k


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g. In the space below, sketch a complete small signal equivalent circuit of a MOS

transistor (assume that the body is not connected to the source). Identify each

element of the equivalent circuit and give a ball park estimate of its magnitude.

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_4/mosfet/mos_models/mos_models.html#b

ody_effect

h. In the space below, draw acascode amplifier stage and briefly describe the

advantages this configuration offers in circuit design.

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_5/lecture_5.html#cascode_amp

i. An amplifier has the gain transfer function

A s( ) =102s

s + 2 102

1

1 + s/2 105

In the space below sketch a Bode plot for its magnitude and specify the midband

gain, the lower 3-dB frequency and the upper 3-dB frequency.

A ( ) = 102 /2 102

1 + /2 102( )2

1

1+ /2 105( )2

20 log A f( ) = 40 + 20 logf

102

20 log 1+ f/10

2( )2

20log 1 + f/105( )2


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(

f = /20.1 1.0 10 10 10 10 10 102 3 4 5 6 7

-40 dB

-20 dB

0 dB

20 dB

40 dB

60 dB

f20 log 102 20 log 1 + f /102( )

2

20 log 1 + f /105( )

Midband Gain

20 log A f)

See Section 7.1 and Example 7.1 in Sedra and Smith

j. The following circuit is used as a temperature measuring device. Find an

expressionfor v out as a function of the temperature to be measured.

+

voutvs

junction diode

ideal op amp

Rs


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Assume thatI V( ) = I0 expV

n k T1

thereforeVS

RS

= I0 expVOUT

n k T

1

so that T=VOUT

n klnVS

I0 RS+1

k. Consider the three Zener diode circuits illustrated below. In the spaces provide, sketch

a representation of the time dependent output signal for each of the three cases


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l. In the following circuit, find vo in terms ofvs1 and vs2 using the ideal op amp model.

V+ =VS2 +2 kVS1 VS 2

6 k= VS1 - 4 k

VS1 VS 26 k

=VS1 + 2 VS2

3

V =1

9VOUT

therefore VOUT = 3 VS1 + 2 VS2( )

m. Using expressions for the iD-vDS characteristics of an enhancement mode, n-channel

MOSFET (as derived in the text and lecture), derive expressions for the small-signal

transconductance gm in both the triode and saturation regions of operation.

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_4/mosfet/mos_models/mos_models.html


10/22


n. The following important characteristic curves for a particular BJT which tells us a

good deal about that device performance.

Briefly discuss the physics of this curve. What is the origin of this current? Whydoes have the shape that it does? What does it tell us about the given transistors

performance?

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_3/collector_current/collector_current.html


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For the amplifier circuit shown below, find an expression for the output vO in terms of the

two inputs v1 and v2. From this expression find expressions for the differential gain Gd, the

common-mode gain GCM and the common-mode rejection ratio CMMR.

+

+

+

R4

R2

R1

R3

V1 V2

VO

+

-

v- v1R1

=v0 v -

R2 v - =

R2R1 +R2

v1 +R1

R1 +R2v0

v+ = R4

R3 +R4v2

v+ = v- R4

R3 +R4v2 =

R2

R1 + R2v1 +

R1

R1 + R2v0

v0 =R1 + R2

R1

R4R3 +R4

v2 R2

R1 + R2v1

=R1 + R2

R1

R4

R3 +R4vcm +

vd

2

R2

R1 + R2vcm

vd

2

= vd2

R2R1

+ R4 R1 +R2( )R1 R3 + R4( )

+ vcm R4 R1 R2 R3R1 R3 + R4( )

Gd =1

2

R2

R1+

R4 R1 +R2( )R1 R3 + R4( )

Gcm =

R4 R1 R2 R3R1 R3 + R4( )

CMRR = 20 logGd

Gcm= 20 log

1

2

R2 R3 + R4( ) + R4 R1 + R2( )R4 R1 R2 R3


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Consider an npn BJT with the following IC-VCE characteristic:


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Suppose that such a transistor is used in the circuit illustrated below.

+

V ( t )

-+

V ( t )

-

in

out

+7V

RB

C

10k

a. By drawing a load line on the characteristic curve, choose the circuit quiescent

point or DC operating point to maximize the AC voltage swing ofVout( t ) . What are

the DC values of the bias current, the collector current, RBand Vout at the quiescent

point (carefully specify units)?

DC bias current = 3.5 A

DC collector current = 0.39 mA

DC output voltage = 3.2 V

Bias resistor = (7.0 0.7)/3.5 x 10-6

= 1.8 M

b. For these quiescent point values, sketch in the space on the next page a complete

small-signal equivalent circuit of the transistor including values and units for all

parameters of the equivalent circuit (neglect any high frequency effects).


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From the graph at the Q - point:

=0.33 mA

3 A110

gm =

I c

VT =

0.39 mA

25 mV 0.016 1

r =gm

=110

0.016 1 6.9 k

ro = vce ic

=8 V

0.09 mA= 89 k

10 k

R = 1.8 MB

r = 6.9 k

r = 89 k

g v = (0.016 ) v m-1

vIN

vOUT

c. Again at the quiescent point found above and at frequencies where we can neglect

capacitive effects, find the small-signal voltage gain, input impedance and output

impedance of the circuit.

Small-signal voltage gain = (0.016 -1) (89 || 10) k = 144

Small-signal input impedance = 1.8 M || 6.9 k = 6.9 k

Small-signal output impedance = (89 || 10) k =9.0 k


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If in the following circuit we assume that the three transistors are identical, find an

expression for the ratio Io/I refin terms of the of the transistors.

I ref

Io

Q1

Q3

Q2

See the discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_6/mirrors/mirrors.html#base_comp


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5 . (Prudent time allocation = 10 minutes)

Measurements on the three circuits below yield the voltages indicated. Find the value of

for each of the pnp transistors.

430 k 2 k 230 1 k20 k 150 k

1 k

+ 5 V + 5 V + 10 V

+ 9 V

+ 2 V + 2.3 V

+ 8.3 V+ 4.3 V+ 4.3 V

(a) (b) (c)

(a) =

(b) =

(c) =


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Consider a NMOS enhancement transistor with the following characteristics:

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

VGS = 3.5V

VGS = 3.0V

VGS < Vt

15

mA

10

mA

5

mA

Output Characteristics of a 2N6762 NMOS Enhancement Transistor

0.0

- 5

mA

iD

DSV

VG

S

D

S

V =t

V

tV = 2V

-

1.0

2.0

3.0

4.0

5.0

6.0

Suppose two such transistors are used in a common source, NMOS amplifier configurationwhere one transistor serves as the load of the other . Assume that the amplifier is powered

by a single-sided + 6 volt supply.

a. Draw a circuit of such an enhancement loaded amplifier in the space below:


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b. Draw directly on the characteristic curve above the appropriate load curve for the

amplifier. See characteristic curve

c. Using this load curve, choose a quiescent point or dc operating point so as to

maximize the ac voltage swing of the amplifier output. What are the dc values of the

bias voltage, the drain current, and the drain-source voltage at the quiescent point(carefully specify units)?

dc bias voltage = 3.5 V

dc drain current = 3 mA

dc drain-source voltage = 2.5 V

d. For these quiescent point values, find the ac voltage gain of the amplifier.

voltage gain 1


As the first step in analyzing the following BJT amplifier, replace the transistor with its low-

frequency T equivalent circuit. Then, derive the gain vE/vi, the gain vC/vi, and the input

impedance of the amplifier.

+

-V

R

vE

vC

EE

C

RE

+VCC

vi


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Nodal Analysis (neglecting ro - i.e ro ):Node B

ib + gm v i vE( ) +

vE

re =

vi

re

Node C

gm vi vE( ) +vCRC

= 0

Node E

vE

re ||RE=

v i

re

Nodal Analysis (including ro):

Node B

ib + gm v i vE( ) +

vE

re =

vi

re

Node C

gm vi vE( ) +vC

ro ||RC= vE

ro

Node E

vE

ro+

vE

re ||RE=

vC

ro+

v i

re

Results (neglecting ro - i.e ro ):vE

vi=

re ||RE

re=

RE

re + REvCvi

= gm RCre

re + RE

1

Rin=

ib

vi=

re

re +RE

gm

1

re


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Results (including ro):

vE

vi=

re ||REre

gmro ||RC

ro

re ||RE( )

1 gmro ||RC

ro

re ||RE( ) +

ro ||RCro RC

re ||RE( )

vCvi

=gm ro ||RC( )

re ||RE

ro

1+

ro

RE

+

re ||RE

re

ro ||RC

ro

1 gmro ||RC

ro

re ||RE( ) +

ro ||RC

ro RC

re ||RE( )

1

Rin=

ib

vi=

re ||RERE

+ro ||RCro RC

re ||RE( )

1 gmro ||RC

ro

re ||RE( ) +

ro ||RCro RC

re ||RE( )

gm -1

re

s


For a particular npn transistor operating in the active mode the collector current is

measured to be 1 mA and 10 mA for base-to-emitter voltages of 0.63 V and 0.70 V,

respectively. Find the corresponding values of n and IS for this transistor.

Assume thatIC VBE( ) = IS expVBE

nVT

therefore n =1

VT

V1 V2( )

lnI V1( )I V2( )

=1

25 mV

0.7 0.63( ) V

ln10

1

=70 mV

25 mV

1

2.3

= 1.2

and IS =IC VBE( )

expVBE

n VT

=10 mA

exp700 mV

30 mV

=10 mA

1.36 1010= 0.7410 -12 A

a. If two such devices are connected in parallel and a forward bias o 0.65 V is applied

across the two base-emitter junctions, what total collector current do you expect?

IC 650 mV( ) = 2 0.74 10 -12 A( ) exp 650 mV30 mV = 3.8 mA


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9. (Prudent time allocation = 12 minutes

a. Draw a complete circuit diagram of an emitter-follower amplifier which uses an npn

BJT.

b. Draw a small-signal version of this complete emitter-follower that utilizes the most

appropriate BJT small-signal equivalent circuit.

c. Using this small-signal circuit, find an expression for the voltage gain of the amplifier

d. Again using this small-signal circuit, find an expression for the input impedance of the

amplifier.

See discussion at:

www.deas.harvard.edu/courses/es154/lectures/lecture_3/bjt_amps/bjt_amps.html#ce

_amp

10 . (Prudent time allocation = 10 minutes)

a. Assuming that the op amp is ideal, find the transfer function H s( ) = V2 s( ) V1 s( ).


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V1 s( )

103 + s=

V2 s( )

103 +106

s

H s( ) = V2 s( )V1 s( )

= 103

+

106

s

103 + s

= 1+

103

s

1+s

103

b. Describe the behavior of this transfer function in both the high and low frequency

limits.

H s( ) =V2 s( )

V1 s( )

103

s

0

H s( ) =V2 s( )

V1 s( ) 0

103

s

11. (Prudent t ime allocation = 15 minutes)

a. Draw a complete circuit diagram of an source-follower amplifier which uses an n-channel

MOSFET.

b. Draw a small-signal version of this complete source-follower that utilizes the most

appropriate MOSFET small-signal equivalent circuit.

c. Using this small-signal circuit, find an expression for the voltage gain of the amplifier

c. Again using this small-signal circuit, find an expression for the input impedance of the

amplifier.

See and adapt the The Common-Collector Amplifier or Emitter Follower

discussion on page 290-295 in Sedra & Smith.

Sample Final Solution 01

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