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Oct, 2000 CMS Tracker Electr onics 1 APV25s1 STATUS ting started beginning September afer cut, others left for probing chips mounted on test boards 9 work well all I2C registers read/writeable no obvious pipeline defects (run with pseudo-random trigger after single reset) pulse shape OK for one channel 1 chip with obvious analogue problem 1 channel pedestal stuck high and low gain in others ailed results here confined to few chips so far line formance of S1 chip version (early results) Pulse shape, linearity, noise, pipeline uniformity, radiation tests clusions Mark Raymond [email protected]
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Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Dec 26, 2015

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Page 1: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 1

APV25s1 STATUS

Testing started beginning September1 wafer cut, others left for probing10 chips mounted on test boards 9 work well all I2C registers read/writeable no obvious pipeline defects (run with pseudo-random trigger after single reset) pulse shape OK for one channel

1 chip with obvious analogue problem 1 channel pedestal stuck high and low gain in others

Detailed results here confined to few chips so far

Outline

Performance of S1 chip version (early results)Pulse shape, linearity, noise,pipeline uniformity, radiation tests

Conclusions

Mark [email protected]

Page 2: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 2

Wafer layout

~ 390 viable APV25s1 sites / wafer

Page 3: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 3

Wafer detail showing reticule

reticule consists of 4 APVs1 APVMUX/PLLtest structures

Page 4: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 4

APV25s1 layout

7.1

mm

8.1 mm

design changes input edge layout changes to reduce track resistance

(input pad layout changed) calibration capacitor layout improved gain increased (resistor values at mux input stage) added internal master current reference for bias generator

(backend pad layout changed from s0 version) digital bug in pipeline logic fixed minor tweaks to component values to achieve greater margins for operation (shaper feedback resistance)

Page 5: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 5

Analogue part of data frame software reordered

Output data frame

Raw data frame

Actual channel order

Samples at 50 nsec. intervals

-4

-2

0

2

4

-4

-2

0

2

4

Digital header1 mip

Cur

rent

[m

A]

differential current output (+ve o/p only shown above)

nominal (mid-range) gain now 1.2 mA/mipvariable between 0.8 and 1.5 in 5 steps

Page 6: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 6

APV25s1 biasing

internal/external option determined by 2 pads (IREF & IREFBIAS)

mode IREF IREFBIAS IVDD[mA] IVSS[mA]

external 128A (R to VDD) VDD 94 156internal disconnect GND 89 143

(VDD=2.5, GND=1.25, VSS=0)

recommended bias settings (decimal) (preliminary)if external bias at 128 A

IPRE 85 IPCASC 45 IPSF 30 ISHA ~ 30 tune for optimum pulse rise time ISSF 30 IPSP 48 IMUXIN 30 VFP ~ 30 VFS ~ 60 tune for optimum pulse fall time

NOTE: These current values are ~70% less than those for s0(current mirroring ratio changed)

Page 7: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 7

time [nsec.]

AD

C u

nits

Pulse shape dependence on input capacitance

Peak mode pulse shape tuned (shaper amplifier bias settings)for each value of input capacitance

ISHA: 21 -> 65 (I2C register setting ~ roughly = A)VFS: 63 -> 50

125

100

75

50

25

0

250200150100500

2pF 4p1 8p1 10p7 14p5 17p5 20p5

Page 8: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 8

200

160

120

80

40

0

AD

C u

nits

2502252001751501251007550250time [nsec]

180160

120

140

100

80604020

0

VFS value (decimal)

Pulse shape dependence on shaper feedbackresistor control voltage VFS

Feedback FET length slightly reduced from S0 versionto ensure short enough time constant achievable withmargin

optimum value here ~ 60 (decimal)

Page 9: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 9

AD

C u

nits

time [nsec.]

outp

ut s

igna

l [m

ips]

input signal injected [mips]

Linearity

Input signal charge injectedin 0.5 mip stepsfrom 0.5 to 7mips.

output normalised to input at 1 mip pointlinearity good up to 3 mips, gradual fall off beyond

7

6

5

4

3

2

1

076543210

peak mode deconvolution

500

400

300

200

100

0

250200150100500

Page 10: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 10

150

100

50

0

100806040200

Calibration response ofall 128 channelssuperimposed

AD

C u

nits

3.125 nsec steps

150

100

50

0

1289664320

Gain/calibration uniformityA

DC

uni

ts

channel no.(mux order)

Pulse peak height dependence on channel number

peak ht. [ADC units]

Good channel matching

20

16

12

8

4

0140120100

entries:128mean:131.0sigma: 1.91min:127.3max: 134.6

f req

uenc

y

Calibration capacitor layout improved

Page 11: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 11

2000

1600

1200

800

400

02520151050-5-10

chan 2 chan 43 chan 107

closed symbols: peak mode: 270 + 38/pFopen symbols:deconvolution: 430 + 61/pF

EN

C [

rms

elec

tron

s]

Input capacitance [pF]

Noise

No dependence on channel number

< 2000 electrons achievable for detectors < 25 pF

Dependence on input capacitance

Page 12: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 12

-2.0

-1.0

0.0

1.0

2.0

1921601289664320

Pipeline - pedestals

Pedestal dependence on pipeline location

channel 19, peak mode

pipeline location

AD

C u

nits

Measure for every channel, take rms value, convert to electronsand histogram

freq

uenc

y

rms electrons

No significant noise contribution

20

15

10

5

01501251007550250

peak mode deconvolution

Page 13: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 13

Pipeline – gain uniformity

How well do pipeline capacitors match?Signal retrieved as charge so mismatch => gain dependence onpipeline capacitance

Measure by storing/retrieving signal to/from every cell

ADC units

freq

uenc

y

Very good matching between pipeline cells

50

40

30

20

10

0150100500

192 entriesmean 122.7sd 0.86min 120.6max 125.7

Page 14: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 14

AD

C u

nits

time [nsec.]

before after 10 Mrads

Radiation tests

1chip irradiated to 10 Mrads using 50 kV X-rays

500400300200100

0250200150100500

500400300200100

0250200150100500

3.02.52.01.51.00.50.0

Noise – histogram all channels

after 10 Mrads

before

Almost no observable degradation after 10 Mrads (confirmsresults from s0 run)

rms ADC units

minor retuning of pulse shape required after irradiation

peak mode deconvolution

Page 15: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 15

Probe testing plans for APV25s1

New probe card made (only needs active and decouplingcomponents to be added) similar (functionally) to s0 version except multiple (3) probes for power on front edge 1 amplifier input probed allowing true chip gain to be determined

Additions to test software measure pulse height for probed channel test multi-mode operation sweep one bias setting measuring power supply currents

Tested die should be available early November

Page 16: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 16

APVMUX/PLL status

Page 17: Oct, 2000CMS Tracker Electronics1 APV25s1 STATUS Testing started beginning September 1 wafer cut, others left for probing 10 chips mounted on test boards.

Oct, 2000 CMS Tracker Electronics 17

ConclusionsEarly APV25s1 results indicate good performance consistentwith results from APV25s0. Minor problems fixed.