MEMOIRS VOLUME61

ISSN 0369-0369

VOLUME 61,2004

MEMOIRS OF THE

nstitute ofIcientific andSndustrialIesearchR

OSAKA UNIVERSITY

Contents

Foreword 111

Outline of ISIR 1. Research Activities 112 2. Education 113 3. International Exchange 114 4. Concluding Remarks 115

Activities of Divisions Quantum Engineering 119 Advanced Materials Science & Technology 153 Organic Molecular Science 109 Intelligent Systems Science 141 Biological Sciences 172 Quantum Beam Science & Technology 193

Activities of Facilities Nanoscience Nanotechnology Center 207 Materials Analysis Center 295 Service Facilities 298

Foreword The Institute of Scientific and Industrial Research was started as a part of Osaka University in 1939. Since then, the Institute had developed into one of the leading research organization for science and engineering in our country. We are hoping that our research on materials/devices, information/intelligence, biology/biotechnology, and their interdisciplinary areas will contribute to the industries, and ultimately to the next generations. "Memoirs of the Institute of Scientific and Industrial Research (ISIR)" has witnessed the sixty-three years history of the Institute, since it was published in 1940, one year after the foundation of ISIR. The roles of Memoirs had been changed with time. During the first decade, its main role was to publish original research papers. However, staff of the Institute started to publish their original work in international journals, and Memoirs became a vehicle for reviews of joint researches and abstracts of papers published by the members of the Institute. Since 1997, Memoirs has become our annual publication summarizing the scientific activities of ISIR.

We report here information such as current research programs and recent findings of each laboratory, list of publications, financial supports from granting agencies, and all other scientific activities. We hope that this publication will be useful and stimulating for researchers in universities, research institutes and industries, and young scientists outside as well as inside our Institute. Masamitsu Futai Former Director,

Tomoji Kawai Present Director,

The Institute of Scientific and Industrial Research

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Outline of ISIR 1. Research Activities

1) History and Organization

The Institute of Scientific and Industrial Research (ISIR) was founded in 1939 as a part of Osaka University, in response to the strong requests from the industrial community of the Kansai area in Japan. The original buildings were constructed in Sakai supported financially by an association of leading private enterprises in Osaka. ISIR moved to the present place in Suita Campus in 1968. For more than half a century, ISIR has been very active as a University-associated research Institute, and dedicated to the advance of basic and applied sciences, especially in the fields of electronics, computer science, metallurgy, inorganic chemistry, organic chemistry, biochemistry, and radiation science. The Institute also has been developing industrial applications of the results obtained by staff members. We celebrated the fiftieth anniversary in 1989. In April 1995, ISIR was reorganized in order to respond effectively to the highly developed science and technology in this country. It has modified its structure to expand basic original research, and to promote interdisciplinary programs based on the three major fields: material sciences, information sciences, and biological sciences. ISIR has at present six research divisions and two institute-associated research centers. The organization of ISIR is shown on the next page. A new building was constructed in 2001 in response to the increased number of scientists. The Nanotechnology and Nanoscience Center started in April 2002. The number of staff scientists is 108 in total, including full professors, associate professors, and assistant professors. Ages and Alma Maters of professors and research staff are shown below. In almost all the large national universities in this country, most of the faculties are graduates of their own university. However, more than half of the staff scientists in ISIR were graduated from other universities. This is an exceptional case in this country, and contributes to promoting scientific activities of the Institute.

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Divisions Departments

Quantum Engineering Quantum Molecular Devices

Photonic and Electronic Materials Semiconductor Electronics Condensed Matter Physics Advanced Materials Structural Characterization and Design Science & Technology Metallic Materials Process

Atom Scale Science Functional Ceramic Materials Structure Ceramic Materials Advanced-Energy Materials Organic Molecular Science Organometallic Compounds

Organic Fine Chemicals Organic Molecular Materials Molecular Excitation Chemistry Synthetic Organic Chemistry Intelligent Systems Science Knowledge Systems

Intelligent Media Architecture for Intelligence Advanced Reasoning Biological Science Structural Molecular Biology

Molecular Cell Biology Cell Membrane Biology Quantum Beam Accelerator Science Science & Technology Beam Materials Science Research Centers (Two Centers)

Nanoscience and Division of Nanomaterials and Nanodevices Nanotechnology Center Department of Artificial Nanomaterials for

Bio-Information Systems Department of Single-Molecular Integrated Devices Department of Supramolecular Chemistry Department of Nanobiology Department of Nanodevice Characterization Department of Nanosystem Design

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Division of Beam Science for Nanotechnology Department of Beam Science for Nanofabrication Department of Quantum Beams for Nanotechnology Department of Beam Processing for Nanotechnology Department of Advanced Nanofabrication Department of Ultrafast Spectroscopy of Nanostuctures

Division of Nanoscience and Nanotechnology for Industrial Applications Department of Nanomaterials and Environmentally Conscious Technology Department of Computational Nanomaterials Design Department of Nano-Bio-Intelligent Systems Science Department of Propatent Strategy for Nanotechnology Department of Nanotechnology Transfer

Radiation Laboratory

Materials Analysis Center Service Facilities Workshop Electronic Processing Laboratory Electron Microscope Laboratory Laboratory for Radio-Isotope Experiments Library

4

5

Staffs, Age (years old) As of 3. 30. 2004

ProfessorAssociateProfessor

AssistantProfessor

ResearchAssociate

Staffs, Alma Mater (As of 3. 30. 2004 )

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2) Administration

Administration and management of ISIR are conducted by the Director elected from the full professors of ISIR. The Director's term of office is for two years. Reappointment is possible, but the Director cannot be in the position for more than four years. The Director as of March 31, 2004 is Professor Masamitsu Futai. Two professors represent ISIR as members of the University Council, the Director and one elected from the full professors of ISIR. The other University Council Member as of March 31, 2004 is Professor Koichi Niihara. Important matters of ISIR are discussed and determined by the Faculty Council, which consists of the Director and all the full professors of ISIR. Various committees such as International Exchange, Self-Review, Circumstances and so on are working for each purpose. Future Plan Committee started in 1998. Administration of the Institute-associated Centers is conducted by Director of each Center and its Executive Committee. Office of Information Network was started in 1998. Evaluation Committee composed of outside experts of academic societies was established in 1998. The committee evaluated several items such as management, budget, facilities and research activities. Evaluation Report was published in March 1999.

3) Research Budget

The budget of ISIR is mainly composed of Institute budget, Grants-in-Aid for Scientific Research of Ministry of Education, Sports, Culture, Science and Technology, Donations for Research, and Budget of Joint Research. The recent trend in the expenditure of ISIR is shown in the next page. Institute budget is composed of various items including Project Research. Project Research was planned in the Research Plan Committee of ISIR and the plan was proposed to Ministry. After the judgment of Ministry, the budget was granted to the Institute. In 1997, research group "Atom Scale Processing for the Creation of Highly Harmonized Functional Materials" (Project leader: Professor T. Kawai) was designated as a Center of Excellence by Ministry of Education, Culture, Sports, Science and Technology.

In 2002, the following project has been selected as a 21st Century Center of Excellence (COE) program from the Ministry of Education, Culture, Sports, Science and Technology.

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Field: Interdisciplinary, Multi and New Fields Program Title: Towards Creating New Industries Based on Inter-Nanoscience Program Leader: Professor Tomoji Kawai (Division of Advanced Materials Science and Technology, ISIR)

Grants-in Aid for Scientific Research of Ministry of Education, Culture, Sports, Science and Technology are delivered to researchers and the total budget in 2003 is 686,997,000 yen. Donation for Research Donation for Research is accepted after the Judgement of Committee and the amount in these two years are as follows.

(Unit : kilo yen , ( ) Number) Division

Year

Quantum Engineering

Advanced Materials Science and Technology

Organic Molecular Science

Intelligent System Sciences

2002

3,581 ( 6)

33,913 (32)

9,486 (15)

7,920 ( 7)

2003

1,500 ( 2)

24,300 (20)

10,250 (13)

6,480 ( 5)

Division

Year

Biological Science

Quantum Beam

Sciences and Technology

Nanoscience and

nanotechnology center

Others Total

2002

13,899 ( 4)

1,111 ( 3)

6,850 ( 7)

76,760 (74)

2003

8,350 ( 9)

2,000 ( 3)

11,050 (14)

1,000 ( 1)

64,930 (67)

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4) Cooperative Research

Cooperative Researches and Contract Researches in 2002 and 2003 financial years are as follows: Cooperative Researches are carried out with 13 organizations. The budget in 2003 is 66,393,000 yen. Contract Researches are 36. The budget in 2003 is 473,471,000 yen.

5) International Research Projects

Koichi Niihara Core University Program between Japan and Korea New Processing and Nanostructure/Property Relationship for Multi-Functionl Ceramic Materials

6) Symposia, Seminars, Workshops and Lectures

A symposium on a special topic and a subsequent conference for presenting results of research activities made by the members of the Institute are held annually in November. They are open to the public. In 2003, the symposium was held on November 28. The topics were Message for Creating New Industries. The second 21st century COE Program / The seventh SANKEN International Symposium on Hybridization of Chemistry, Biology, and Material Science, -Perspectives in Nanoscience- was held on January 13-14, 2004. The International Symposium on Scientific and Industrial Nanotechnology 2003 (ISSIN-2003) was held on 8-9 December, 2003 at the Lecture Hall, ISIR, Osaka University. This International Symposium was co-sponsored by the Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research (ISIR) and the Grant-in Aid for Specially Promoted Research Function Harmonized Materials Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan. In this symposium, invited lectures by 18 outstanding researchers from the world and invited talks by 8 researchers from the ISIR as well as over 60 poster papers were presented. The number of participants was over 150. The first SANKEN International Workshop on Intelligent Systems was held by students in the division of Intelligent Systems Science on December 17, 2003.

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Other Lectures and Seminars

12 May 2003 Wolfgang Braun

(Paul Drude Institute, Germany, Researcher)

In Situ Synchrotron X-Ray Diffraction Studies of MBE Growth

22 May 2003 Michiyoshi Nukaga (University of Connecticut, U.S.A. )

X-ray crystallographic analysis of -lactamase in ultrahigh resolution

26 May 2003 Kichisuke Nishimoto (Okayama University of Science, Guest Professor)

The basic quantum chemistry and primary study for Gaussian98

27 Jun 2003 Jin-Chun Kim (Korea Institute of Machinery and Materials(KIMM), Researcher)

Preparation of WC and WC-Co Nanopowders by Chemical Vapor Condensation Proces

15 Jul 2003 Thimaporn Phetkaew (Chulalongkorn University, Thailand)

Reordering Adaptive Directed Acyclic Graphs: An Improved Algorithm for Multiclass Support Vector Machines

16 Jul 2003 Kichisuke Nishimoto (Okayama University of Science, Guest Professor)

The fundamental equation of quantum chemistry and the difference between MOPAC and DFT

7 Aug 2003 Masashi Furukawa (RIKEN, Postdoctoral Researcher)

Analyses of conduction mechanism in DNA using electron spectroscopies

6 Oct 2003 Kiyonori Suzuki (Monash University, Senior Lecturer)

Soft Magnetic Properties of Nano-Structured Magnetic Materials

23 Oct 2003 Ljupco Todorovski (Jozef Stefan Institute, Slovenia, Researcher)

Using Domain-Specific Knowledge for Automated Modeling

23 Oct 2003 Tomoko Ohnishi (University of Pennsylvania, U.S.A. Professor)

Insights into the reaction mechanism of proton-translocationg NADH-quinone oxidoreductase(Complex )

5 Dec 2003 Hansjoerg Griese (Fraunhofer Institute)

Microintegration and Reliability of Electronics for a sustainable development

5 Dec 2003 Tomas Pajdla (Czech Technical University in Prague, Associate Professor)

Non-central cameras, their models, and stereo geometries

13 Jan 2004 Sinn-wen Chen (National Tsing Hua University)

Lead free solder/Ni Interfacial reactions in the electronic products

15 Jan 2004 Jin-Hyeok Kim (Chonnam National University,

Heteroepitaxial Growth of Oxide Thin Films On Si Substrates by

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Associate Professor) Physical Vapor Deposition Methods 16 Jan 2004 Jin-Hyeok Kim

(Chonnam National University, Associate Professor)

Structural Characterization of Oxide Thin Films Using High Resolution Transmission Electron Microscopy

16 Jan 2004 Horst W. Hahn (Darmstadt University of Technology, Professor)

Toward Creating New Industry Based on Nanosized Particle Systems

16 Jan 2004 Teruhisa Ohno (Kyushu Inst. Tech. Professor)

Visible light reactive TiO2 Photocatalyst

16 Jan 2004 Ryuji Kato (Nat. Inst. Adv. Ind. Sci. Tech. )

Observation of photoreactive species in a film of TiO2 nanoparticles with visible-nIR transient absorption measurement

16 Jan 2004 Fumio Kokai (Mie University, Professor)

Synthesis and modification of carbon nanotubes with laser irradiation

19 Jan 2004 Kazuhiko Nakatani (Kyoto University, Associate Professor)

Surface Plasmon Sensors for DNA mismatch detection

19 Jan 2004 M. Joanne Lemieux (University of Alberta, Canada)

Structure and Mechanism of GlpT, the glycerol-3-phosphate transporter from E. coli

20 Jan 2004 Akira Murakami (Kyoto Inst. Tech., Professor)

Transcriptome analysis using photo-functionalized nucleic acid derivatives

20 Jan 2004 Kazunari Yamana (Himeji Inst. Tech., Associate Professor)

Fluorescence and electrochemical detection of DNA mismatch

31 Jan 2004 Akira Yamada (Kyushu University, Professor)

Phototechnological application of gold nanoparticles-from catalyst to photonics

31 Jan 2004 Teijiro Ichimura (Tokyo Inst. Tech., Professor)

Molecular world developed by laser chemistry

31 Jan 2004 Minoru Yamaji (Gunma University, Associate Professor)

Recent photochemical reactions involving triplet energy transfer

2 Feb 2004 King-Ning Tu (UCLA, Professor)

Mechanism of spontaneous Sn whisker growth

4 Feb 2004 Tomiki Ikeda (Tokyo Inst., Tech., Professor)

Preparation of photofunctional materials applied by cooperative phenomena

6 Feb 2004 Toyohiko J. Konno (Osaka Prefecture University, Professor)

Roles of electron microscopy in nanotechnology

6 Feb 2004 Shigeo Mori (Osaka Prefecture University, Associate Professor)

Nanoscale ferromagnetism in CMR manganites

13 Feb 2004 Hiroshi Onishi Analysis of photocatalytic reaction

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(Kanagawa Academy of Sci. Tech.)

with probe microscopy and time-resolved spectroscopy

14 Feb 2004 Yoshio Nosaka (Nagaoka Sci. Tech. University, Professor)

Recent development of reaction mechanism of TiO2 photocatalyst

19 Feb 2004 Yasumaru Hatanaka (Toyama Med. Pham. University, Professor)

Photoaffinity analysis for drug design

19 Feb 2004 Atsutaka Kunai (Hiroshima University, Professor)

Synthesis and properties of organosilicone compounds towards functional materials

21 Feb 2004 Yasunao Kuriyama (Yamagata University, Associate Professor)

Photochemistry in zeolite pores

21 Feb 2004 Nobuo Ikota (Radiation Medical Inst.)

Oxidative stress and redox control by radiation

23 Feb 2004 Takashi Karatsu (Chiba University, Associate Professor)

Preparation of organosilicone compounds for materials

23 Feb 2004 Kazuo Tsujimoto (Adv. Inst. Sci. Tech., Professor)

Relationship between ant-oxidation and anti-photoaging of organonatural compounds

23 Feb 2004 Hisafumi Ikeda (Tokyo Sci. University, Associate Professor)

Artificial functionalized nucleic PNA

24 Feb 2004 Hiroyuki Akinaga (National Institute of Advanced Industrial Science & Technology, Superior Nanostructure Group Leader)

Advanced status of spin electronics and their related works

24 Feb 2004 Masahiko Sisido (Okayama University, Professor)

Preparation of non-natural aminoacids-modified protein

24 Feb 2004 Shigeo Murata (Nat. Inst. Adv. Ind. Sci. Tech. )

Ultrafast electron transfer and exciplex formation

24 Feb 2004 Kenichi Sugiura (Tokyo Metropolitan University, Associate Professor)

Chemistry of porphyrin oligomers

25 Feb 2004 Chikashi Toyoshima (Institute of Molecular and Cellular Biosciences, University of Tokyo, Professor)

Mechanism of ion transport by calcium pump

28 Feb 2004 Takashi Hayashi (Kyushu University, Associate

Functionalization of myoglobin proteins

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Professor) 28 Feb 2004 Shuichi Hashimoto

(Gunma Int. Tech., Professor) Diffusion of adsorbed molecules in zeolites

28 Feb 2004 Nobuyuki Tamaki (Nat. Inst. Adv. Ind. Sci. Tech.)

Photoresponsible molecular assemblies

28 Feb 2004 Hirofumi Yajima (Tokyo Sci. University, Professor)

Single-wall carbon nanotube-biopolymer conjugates

28 Feb 2004 Hiroyuki Niino (Nat. Inst. Adv. Ind. Sci. Tech.)

Fabrication of quartz surface by liquid laser ablation

1 Mar 2004 Yoshio Sakaguchi (Inst. Phys. Chem. Res.)

Reaction control by magnetic field and micro-wave

1 Mar 2004 Mitsuru Ishikawa (Nat. Inst. Adv. Ind. Sci. Tech.)

Preparation of SERS surface for single molecular detection

1 Mar 2004 Hideo Higuchi (Tohoku University, Associate Professor)

Control and systematic construction of protein motions

1 Mar 2004 Kazunari Akiyoshi (Tokyo Med. Dent. University, Professor)

Biomaterials by nanogel technology

7) Public Information Activity

Public information activity of ISIR in 2003 is as follows: Bulletin of ISIR (2003) (in both Japanese and English) Memoirs of the Institute of Scientific and Industrial Research,

Osaka University (Vol.60, 2003) (in English) Annual Report of ISIR (2003) (in Japanese) SANKEN News Letters, 19-21(in Japanese) Report on SANKEN TECHNO SALON (2003) (in Japanese) WWW home-page (http://www.sanken.osaka-u.ac.jp/)

(English version is available.)

8) Research Reports

The number of scientific and technological papers published in 2003 is 490. The details are described in the part of activity of divisions and facilities.

9) Scientific Awards

T.Kawai Medal with Purple Ribbon (Cabinet Office)

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K.Tanizawa The Vitamin Society of Japan Award (The Vitamin Society of Japan)

M.Futai The Pharmaceutical Society of Japan Award03 (The Pharmaceutical Society of Japan)

T.Kawano BCSJ Award (The Chemical Society of Japan)

T.Oku The 53rd Metallographic Award (The Japan Institute of Metals)

H.Motoda Encouragement Award of The Japanese Society for Artificial Intelligence

T.Washio Encouragement Award of The Japanese Society for Artificial Intelligence

K.Sato Award for Encouragement of Research in Material Science (The Materials Research Society of Japan)

S.Hyun Excellent Paper Award (Society for the Advancement of Materials Process Engineering)

H.Nakajima Excellent Paper Award (Society for the Advancement of Materials Process Engineering)

T.Ikeda Excellent Paper Award (Society for the Advancement of Materials Process Engineering)

Y.Yagi 10th ACM Symposium on Virtual Reality Software and Technology 2003 Honorable Mention Award

K.Nishino Kuroyas Scholarship Award (Japanese Society for Microbiology)

2. Education ISIR accepts graduate students (about 190) from the Graduate Schools of Science, Engineering, Engineering Science, Pharmaceutical Science, and Frontier Biosciences, Information Science and Technology, and Frontier Bioscience, and also researchers for special training, including those from industry and from abroad. Staff members also belong to various Faculties: Faculty of Science, Faculty of Engineering, Faculty of Engineering Science, Faculty of Pharmaceutical Science, Faculty of Information Science and Technology, and Faculty of Frontier Bioscience. Some members belong to two Faculties. They give lectures for graduate and undergraduate students in each Faculty.

Number of graduate students as of March 1, 2004 is as follows.

G.S. Course

Science Engineering Engineering Science

Pharmaceutical Science

Information Science and Technology

Frontier Bioscience

Total

Master Course 38 48 16 8 6 1 117 Doctor Course 28 36 5 3 2 0 74 Total 66 84 21 11 8 1 191

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Number of students who had obtained Master's or Doctor's Degree in 2003 is as follows.

Field Degree

Science Engineering Engineering Science

Pharmaceutical Science

Information Science and Technology

Frontier Bioscience

Total

Master Degree 23 34 3 4 0 0 64 Doctor Degree 8 12 1 0 0 0 21 Total 31 46 4 4 0 0 85 SANKEN Open Seminar described previously also supplies a chance of education for members of society. 3. International Exchange 1) Exchange Agreement

The international exchange with universities and research institutions all over the world is promoted by International Exchange Committee of ISIR. Japan-Korea Joint Research Project starts for Novel Processing and Synthesis of Ceramic/Metal Nanocomposits by JSP and KOSEF, in 1999. Osaka university (Japan) and Handing University (Korea) are selected as core universities. Academic Exchange Agreements are now concluded with the following six organizations. Faculty of Natural Science, Otto-Von-Guericke University, Magdeburg (Germany) University of Maryland (U.S.A.) Basic Science Research Institute, Pukyong National University (Korea) Research Center Juelich (Germany) University College London (U.K.) Hanyang University (Korea) 2) Foreign Researchers and Students

Number of foreign researchers and students staying in ISIR as of March 31, 2004 is 28 in total. Details are: Research Associates (7),Visiting Researchers (1), Research Students (6), Graduate Students (Doctor Course) (13), (Master Course) (1). Their nationalities are : Korea (14), China (7), Thailand (2), India (2), Taiwan (1), Finland (1), Philippines (1) Foreign visitors in 2003 are as follows:

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U.S.A. (4), Germany (6), Korea (7), U.K. (1), China (1), Canada (3), Switzerland (1), Spain (1), Australia (1), Netherlands (2), Thailand (17), Taiwan (1), Malaysia (2), Belgium (1) Total (48). 3) International Conferences and Symposiums

Number of presentations (plenary, invited, oral and poster in various international conferences and symposia) by staff of ISIR is 665 in total. Number of ISIR staffs who have been working as committee members of International Conferences or Editorial Board of international academic journals are 171 in total. For more details, see the part of activity of divisions and facilities. 4. Concluding Remarks

Research activities of ISIR were evaluated in 1998 by an Evaluation Committee formed from outside experts of academic and industrial societies. Report of evaluation was published in March, 1999. Their opinion and proposal for our future are summarized from the report. (1) Management of Organization and Management System In the reorganization of the Institute in 1995, previous small research divisions were grouped to larger ones including several professors, associate professors and research associates in order to increase joint research and scientific communication among scientists. The new organization was highly evaluated, but the joint researches programs should be increased. Many committees are working for the administration of the Institute. However, simpler and more efficient organizations of faculty committees should be considered. 2) Budget and Facilities Outside experts reported that the sufficient research budget has been obtained compared with other research institutes. Necessary facilities and research equipments are installed to a considerable level. In 1997, Harmonized Materials Research Group was designated as one of the Centers of Excellence (COE) of Ministry of Education, indicating the high research activity of the Institute. The COE budget is an important source for the Institute. However, more support is still required for some Departments carrying out important research.

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A serious problem was the lack of space for research activity. We requested the construction of a new building to the Government, and completed the second building. (3) Graduate and Undergraduate Education About 190 graduate students from various Osaka University Graduate Schools such as Science and Engineering are working with us, and obtaining valuable experience in collaboration with our faculties. Staffs of our Institute partly take part in undergraduate education. A few members of the evaluation committee had opinions that we should be mainly engaged in research and not in such education. However, considering the situation of Osaka University, we should support the undergraduate education to some extent. It was pointed out that the Institute should make more efforts for science education for society members including industrial communities. Accepting the suggestion we started Sanken Techno-Salon providing a forum between our staff and people from industries specialized for electronics, organic chemicals, semiconductors, drugs, etc. We also started seminars for the seeds of new technologies to the industrial communities. (4) Contribution to Societies Presentation in scientific meetings and publications of research achievements by the Institute members are highly evaluated by the Committee. Contact to industries is being made through the efforts of individual professors and through Sanken Techno Salon started in 1998. Mutual understanding between the Institute and industries is obtained to considerable extents by the Salon. We started five workshops in 2001 for studying practical use of methods or materials invented and developed by the Institute. Through such workshops, we will be able to transfer our industrial seeds for new technology and ideas for new materials. (5) International Exchange Evaluation Committee pointed out that the more foreign researchers and students could be able to join the Institute. Responding to this comment, we are trying to invite more staffs and students from other countries. International Conferences sponsored by our Institute have been held twice a year since 1998. Taking into consideration of required expenses and efforts for the organization, two times is the appropriate number for one year.

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(6) Future Plan and Prospect In 1998, Future Planning Committee was established in the Institute by reorganization of Research Plan and Reorganization Committee. Future plan of the Institute was discussed in this Committee and summarized in annual report which can be seen in the Home Page of ISIR (http://www.sanken.osaka-u.ac.jp/). The Institute of Scientific and Industrial Research is making continued efforts toward higher levels contribution to science and industries.

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Activity of Divisions

Division of Quantum Engineering Outline

New, advanced materials and fabrication techniques of nanostructures that allow the realization of the desired quantum effects of electrons, photons and spins are indispensable for the creation of novel electronic, photonic and spintronic devices. The Division of Quantum Engineering is engaged in experimental and theoretical research on these subjects aiming to establish the basis of future electronic/photonic/spintronic devices based on novel quantum effects. The Division of Quantum Engineering is composed of four departments: Quantum Molecular Devices, Photonic and Electronic Materials, Semiconductor Electronics and Condensed Matter Physics. Various approaches are being taken in the fields of electronic materials design and tailoring, surface physics, nanometer scale materials fabrication and characterization, semiconductor nanostructures for quantum devices, semiconductor-based new bio/chemical sensors and computational physics. Research areas studied and techniques employed by the Division of Quantum Engineering include atomic and electronic structures of semiconductor surfaces and interfaces, nanofabrication processes using scanning probe microscopy, arrangement of biomolecules on silicon substrates, epitaxial growth of compound semiconductors by molecular beam epitaxy, characterization of structural, electric, optical and magnetic properties of semiconductor materials, formation and characterization of low-dimensional semiconductor quantum structures, fabrication of new semiconductor and quantum structure devices, control of the physical properties of carbon nanotibes and the fabrication of single electron transistor, and prediction of new functional materials and fabrication processes design using first principles and electronic structure calculations. Interdisciplinary researches in cooperation with other divisions are also pursued. Achievements

Thermodynamic study of atomic steps on Si surfaces and development of

bio/chemical imaging sensor Crystal growth and characterization of new semiconductors including Tl-III-V, III-V

nitrides, magnetic III-V semiconductors and quantum nanostructures Formation and characterization of low-dimensional semiconductor quantum

structures Control of the physical properties of carbon nanotibes and the fabrication of single

electron transistor Prediction of new functional materials and fabrication processes using first principles

and electronic structure calculations Materials design for semiconductor spintronics from the first principles Materials process design by electronic excitations from the first principles

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Department of Quantum Molecular Devices Professor: Hiroshi IWASAKI Associate Professor: Tatsuo YOSHINOBU Research Associates: Toshiyuki ADACHI, Koichi SUDOH Post Doctoral Fellow: Keisuke KAMETANI, Hongwen LIU Research Technical Expert: Morio INOUE Graduate Students: Hitoshi KURIBAYASHI, Yasuhito UI, Konobu

KIMURA, Yuzuru MIYATA, Hideaki FUJIMURA Support Staff: Fumi TOGAI Outlines

The Department of Quantum Molecular Devices is engaged in development of novel devices that integrate the quantum mechanical features of semiconductors and molecular functions of biomolecules including DNA and protein. We are also developing the Scanning Chemical Microscope for visualization of chemical and biological specimens. Current Research Programs 1. Layer Growth of CaF2 on Si(111) Surfaces In submonolayer growth of CaF2 on vicinal Si(111) surfaces, transition from step to island nucleation with increasing substrate terrace width has been investigated, using scanning tunneling microscopy. 2. Properties of Atomic Steps on SrTiO3(001) Surfaces Thermodynamic properties of unit-cell-high steps on SrTiO3(001) surfaces has been studied by STM. Analyzing the terrace width distributions on SrTiO3(001) vicinal surfaces with various misorientation angles, the interactions between neighboring steps have been quantitatively characterized. 3. Shape Transformation of Si Trenches by Hydrogen Annealing Mechanism of shape transformation of micron-sized trench structures fabricated on Si(001) by high temperature hydrogen annealing has been studied. By analyzing the time dependence of the trench corner curvature, it was shown that surface self diffusion is responsible for the shape transformation. Numerical simulation method of shape transformation of 3-D structures via surface diffusion was developed. 4. Patterning of Biomolecules on Si by AFM Anodic Oxidation Processes for micropatterning of protein and DNA molecules on Si weredeveloped based on the anodic oxidation technique of the Si surface by an AFM probe. 5. Observation of Protein by AFM, STM and Spectroscopic Ellipsometry AFM, STM and (scanning) spectroscopic ellipsometry were applied to observation and detection of protein molecules on solid surfaces.

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6. Application of the Chemical Imaging Sensor to Microfluidic Devices A flow channel was microfabricated on the surface of the chemicalimaging sensor, which allows visualization of ion distributions inside the channel. Publications Original Papers AFM Fabrication of Oxide Patterns and Immobilization of Biomolecules on Si Surface, T. Yoshinobu, J. Suzuki, H. Kurooka, W. C. Moon and H. Iwasaki: Electrochimica Acta, 48 (2003) 3131-3135. Shape Transformation of Silicon Trenches during Hydrogen Annealing, H. Kuribayashi, R. Hiruta, R. Shimizu, K. Sudoh and H. Iwasaki: J. Vac. Sci. Technol. A 21 (2003) 1279-1283. The Double K+/Ca2+ Sensor Based on Laser Scanned Silicon Transducer (LSST) for Multi-Component Analysis, Yu. Ermolenko, T. Yoshinobu, Yu. Mourzina, K. Furuichi, S. Levichev, M. J. Schning, Yu. Vlasov and H. Iwasaki: Talanta., 59 (2003) 785-795. Anion-Selective Light-Addressable Potentiometric Sensors (LAPS) for the Determination of Nitrate and Sulphate Ions, Yu. G Mourzina, Yu. E Ermolenko, T. Yoshinobu, Yu. Vlasov, H. Iwasaki and M. J. Schning: Sensors and Actuators B 91 (2003) 32-38. Detection of Protein-Protein Interactions on SiO2/Si Surfaces by Spectroscopic Ellipsometry, S. Kodera, T. Okajima, H. Iwabuki, D. Kitaguchi, S. Kuroda, T. Yoshinobu, K. Tanizawa, M. Futai and H. Iwasaki: Analytical Biochemistry 321 (2003) 65-70. K+-Selective Field-Effect Sensors as Transducers for Bioelectronic Alications, Yu. Mourzina, Th. Mai, A. Poghossian, Yu. Ermolenko, T. Yoshinobu, Yu. Vlasov, H. Iwasaki and M. J. Schning: Electrochimica Acta. 48 (2003) 3333-3339. Portable Light-Addressable Potentiometric Sensor (LAPS) for Multisensor Alications, T. Yoshinobu, M. J. Schning, R. Otto, K. Furuichi, Yu. Mourzina, Yu. Ermolenko and H. Iwasaki: Sensors and Actuators B 95 (2003) 352-356. Investigation on Light-Addressable Potentiometric Sensor as a Possible Cell-Semiconductor Hybrid, A. B. Md. Ismail, T. Yoshinobu, H. Iwasaki, H. Sugihara, T. Yukimasa, I. Hirata and H. Iwata: Biosensors and Bioelectronics 18 (2003) 1509-1514. Flow-Velocity Microsensors Based on Semiconductor Field-Effect Structures, A. Poghossian, T. Yoshinobu and M. J. Schning: Sensors 3 (2003) 202-212.

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Ambient STM and in-situ AFM Study of Nitrite Reductase Proteins Adsorbed on Gold and Graphite, S. Antoranz Contera, H. Iwasaki and S. Suzuki: Ultramicroscopy 97 (2003) 65-72. Review Papers Nanolithography on SiO2/Si with a Scanning Tunnelling Microscope, H. Iwasaki, T. Yoshinobu and K. Sudoh: Nanotechnology 14 (2003) R55-R62. Step Dynamics in Faceting on Vicinal Si(113) Surfaces, K. Sudoh and H. Iwasaki: J. Phys.: Cond. Mat. 15 (2003) S3241-S3253. International Conferences Multi-Analyte LAPS Based on Photocurable Polymeric Membranes, T. Yoshinobu, Yu. Ermolenko, Yu. Mourzina, H. Iwasaki, Yu. Vlasov, *M. J. Schning. BioSensorSymposium (BSS2003), Potsdam, Germany, 30 March - 2 April 2003. Multi-Component Analysis Based on the Light-Addressable Potentiometric Sensor (LAPS), *T. Yoshinobu, H. Iwasaki, Y. Ermolenko, Y. Mourzina, Y. Vlasov and M. J. Schning, Sensor 2003, Nrnberg, Germany, 13 - 15 May 2003. Flow-Velocity Microsensors Based on Semiconductor Field-Effect Structures, *A.Poghossian, T. Yoshinobu and M. J. Schning, International Symposium on Sensor Science (I3S), Paris, France, 16 - 20 June 2003. Amorphous Silicon as Semiconductor Material for High Resolution LAPS, *W. Moritz, T. Yoshinobu, F. Finger, S. Krause and M. J. Schning, 17th European Conference on Solid-State Transducers (Eurosensors XVII), Guimaraes, Portugal, 21 - 24 September 2003. A Multisensor Based on Laser Scanned Silicon Transducer (LSST): Development and Properties, Yu. Ermolenko, *T. Yoshinobu, Yu. Mourzina, M.J. Schning, Yu. Vlasov and H. Iwasaki, 17th European Conference on Solid-State Transducers (Eurosensors XVII), Guimaraes, Portugal, 21 - 24 September 2003. Thin-Film a-Si LAPS: Preparation and pH Sensitivity, *T. Yoshinobu, M. J. Schning, F. Finger, W. Moritz and H. Iwasaki, 17th European Conference on Solid-State Transducers (Eurosensors XVII), Guimaraes, Portugal, 21 - 24 September 2003. Formation of Aligned SiC Dots on Vicinal Si(111) Using CaF2 Masks (Poster), *K. Kametani, K. Sudoh and H. Iwasaki, The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, 16 - 20 November 2003. Effect of Hydrogen Ambient on Corner Rounding of Silicon Trench during High Temperature Annealing (Poster), *H. Kuribayashi, R. Hiruta, R. Shimizu, K. Sudoh and

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H. Iwasaki, The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, 16 - 20 November 2003. In situ Observation and Analysis of Step Structures on Tetragonallysozyme (110) Surface during Crystal Growth (Poster), *K. Kimura, T. Yoshinobu, K. Sudoh and H. Iwasaki, The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, 16 - 20 November 2003. In situ Observation and Analysis of Step Structures on Tetragonal Lysozyme (110) Surface during Crystal Growth (Poster), *K. Kimura, T. Yoshinobu, K. Sudoh and H. Iwasaki, International Symposium on Scientific and Industrial Nanotechnology 2003 (ISSIN-2003), Osaka, Japan, 8 - 9 December 2003. Biomolecules Patterning on Si Surface by AFM Oxidation (Poster), *W. C. Moon, T. Yoshinobu, A. Nishikawa and H. Iwasaki, International Symposium on Scientific and Industrial Nanotechnology 2003 (ISSIN-2003), Osaka, Japan, 8 - 9 December 2003. Light-Addressable Potentiometric Sensor for Detection of Ion Distribution in Microfluidic Channel (Poster), *Y. Ui, T. Yoshinobu and H. Iwasaki, International Symposium on Scientific and Industrial Nanotechnology 2003 (ISSIN-2003), Osaka, Japan, 8 - 9 December 2003. Step Kinetics in Step-Flow Growth of CaF2 on Si(111) (Poster), *Y. Miyata, K. Sudoh, K. Kametani and H. Iwasaki, International Symposium on Scientific and Industrial Nanotechnology 2003 (ISSIN-2003), Osaka, Japan, 8 - 9 December 2003. An STM Study of Step Distributions on SrTiO3(001) Surfaces (Poster), *K. Sudoh and H. Iwasaki, International Symposium on Scientific and Industrial Nanotechnology 2003 (ISSIN-2003), Osaka, Japan, 8 - 9 December 2003. Patterned Surface as a Template for DNA-Based Nanotechnology, W.C. Moon, * A. Nishikawa, T. Yoshinobu and H. Iwasaki, 2003 Congress on Evolutionary Computation (CEC 2003), Canberra, Australia, 8 - 12 December 2003. Publications in Domestic Meetings The Japan Society of Applied Physics 9 papers The Physical Society of Japan 3 papers The Society of Instrument and Control Engineers 2 papers The Electrochemical Society of Japan 1 paper

Academic Degrees

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Master Degree of Engineering

Y. Ui Application of the Chemical Imaging Sensor to the Measurement of Ion Concentration in a Microfluidic Channel

K. Kimura Study on Crystal Growth of Hen-Egg Lysozyme Y. Miyata Study on Layer Growth of CaF2 on Si(111) Surfaces

Sponsorship Grant-in-Aid for Scientific Research (C) (2) T. YOSHINOBU Development of Multiple Ion Imaging Sensor and

its Application to Biological Specimens 900,000

Grant-in-Aid for Young Scientists (B) K. SUDOH Thermodynamic and Kinetic Properties of Steps on

Metal Oxide Surfaces 600,000

Other Research Fund H. IWASAKI Foundation for Biomedical Research and

Innovation 2,3-D Display of Cells and Its Application to Next Generation Analysis System

4,437,500

Department of Photonic and Electronic Materials Professor: Hajime ASAHI Associate Professor: Shigehiko HASEGAWA Research Associates: Shuichi EMURA, Yi-Kai ZHOU Post Doctor Fellow: Xi-Jun LI, Shanthi SUBASHCHANDRAN Graduate Students: Jun MORI, Masahiko HASHIMOTO, Hwe-Jae LEE

Atsushi FUJIWARA, Moo-Seong KIM Akinori, IMADA, Yusuke OSUMI, Hiroyuki TANAKA Sosuke NISHIDA, Shigeya KIMURA, Takashi SHIMADA Wataru DOI, Toshikazu MUKAI, Hironori MUNAKATA Takashi YAMASHITA

Research Student: Sung-Woo CHOI Support Staff: Noriko KIKUMOTO Outlines

The department of Photonic and Electronic Materials makes research on materials, mainly semiconductors and related materials, and their processing. Four steps are required in materials research, that is, materials design, materials synthesis (crystal growth) and processing, materials characterization, and device application. In materials design, study on finding required characteristics by changing the combination and ratio of atoms is conducted. In materials synthesis, study on molecular beam epitaxy growth is mainly carried out, in which crystal growth is done by supplying molecules and atoms onto the substrate surface. In materials characterization, structure investigation by X-ray diffraction, STM, EXAFS and so on, optical characterization by photoluminescence, Raman scattering and so on, electrical characterization by Hall measurement, and magnetic characterization by SQUID are carried out. In device application, basic researches on photonic devices such as lasers, electronic devices such as field emission devices, and spintronic devices are conducted. Current Research Programs 1. Crystal Growth and Properties of Diluted Magnetic Semiconductors Diluted magnetic semiconductors, which have two characters of semiconductors and magnetic materials, are gathering interest as a candidate for new functional materials. In 2001, we succeeded in the growth of GaCrN and observed the room temperature ferromagnetism. In 2002, we observed the PL emission at room temperature. We also observed the room temperature ferromagnetism together with sharp PL emission for the rare-earth doped GaN, GaGdN and GaEuN. In 2003, we have conducted the EXAFS studies on GaCrN, GaGdN, GaEuN and confirmed that Cr, Gd and Eu atoms occupy the Ga site. Studies on the time resolved PL and the excitation power dependence of PL revealed that the PL from GaCrN is due to the band-to-band transition and that those from GaGdN and GaEuN is the f-f atomic level transition. We also demonstrated the spin tunnel characteristics in DyN/GaN superlattice structures.

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2. Growth, Characterization and Device Application of Semiconductor-Semimetal Mixed Crystals; New Semiconductors Including Tl In 1995, we proposed new semiconductors TlInGaAs in which the bandgap energy is independent of temperature. We have succeeded in the growth of TlInGaAs by MBE, though small composition of Tl. We confirmed the very small temperature variations of PL and electroluminescence (EL) peak energies. In 2001, pulsed-current injection laser operation was achieved in TlInGaAs/InP DH laser diodes (LDs) at room temperature. In 2002, we confirmed the small temperature variation of lasing peak wavelength as small as 0.06 nm/K. In 2003, we have measured the temperature dependence of refractive index and confirmed the small temperature variation, which agrees with the small temperature variation of the lasing peak wavelength. Further, we proposed TlInGaAsN/AlGaAs for both temperature-stable wavelength and threshold current LDs. We succeeded in the growth of TlInGaAs/GaAs heterostructures and observed the small temperature variation of the PL peak wavelengths. 3. Crystal Growth and Characteristics of Nitride Semiconductor Mixed Crystals III-V nitride semiconductors gather much interest from the viewpoint of application to light emitting devices as well as devices used in harsh environment. We tried the growth of GaN on quartz glass substrate and observed the strong PL emission from the grown polycrystalline GaN. We proposed the wide variety of device applications. In 2001, we obtained the good electric field emission characteristics of electrons from GaN/metal samples, which is promising to fabricate the field emission electron source devices. In 2002, we confirmed the improvement in field emission threshold voltage by the growth of thin AlN layer because of small electron affinity of AlN. In 2003, We have formed the GaN nano-rod structures on Si substrate and obtained the very small threshold voltage of 1.1 V/m for the electron emission. 4. Self-Formation and Properties of Semiconductor Quantum Structures

In 1997, we found that the QDs were self-formed by growing GaP/InP short-period superlattices (SPSLs) on GaAs (N11) substrates and that they are aligned along two perpendicular directions with high density. We realized the laser operation in QD laser diodes. By growing GaAs/InAs SPSLs on InP (411)A substrates, we succeeded in the fabrication of QDs showing the controlled PL emission at wavelengths of 1.3-1.6 m, which is very important wavelength region in the optical information communication systems. In 2003, by using these QDs we have realized the 1.3-1.5 m LEDs.

5. Nano-observation and characterization of short-channel MOSFET

The cross sections of the short-channel MOSFETs, which were fabricated by the ion implantation with various implantation angles, were studied. We have succeeded in the visualization of the device nano-structures, such as the sizes and structures of the extension as well as the overlap lengths between the extension and the gate. We also demonstrated that the relation between the fabrication conditions and the fabricated device structures can be analyzed in nano-scale by this technique. Publications

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Original Papers New III-V-based Magnetic Semiconductors and Quantum Nano-structures, H. Asahi: J. Korean Phys. Soc.42 (2003) S499-S503. Magnetic and Optical Properties of GaMnN Grown by Ammonia Source Molecular Beam Epitaxy, M. Hashimoto, Y.K. Zhou, H. Tampo, M. Kanamura and H. Asahi: J. Cryst. Growth, 252 (2003) 499-504. MBE Growth and Properties of GaCrN, M. Hashimoto, Y.K. Xhou, M. Kanamura, H. Katayama-Yoshida and H. Asahi: J. Cryst. Growth, 251 (2003) 327-330. Gas Source MBE Growth of TlInGaAs/InP Laser Diodes and Their Room Temperature Operation, H.J. Lee, A. Fujiwara, A. Imada and H. Asahi: J. Cryst. Growth 251 (2003) 800-803. Room Temperature Ferromagnetism in IIIV-Based Diluted Magnetic Semiconductor GaCrN Grown by ECR Molecular-Beam Epitaxy, Y.K. Zhou, M. Hashimoto, M. Kanamura, H. Asah: Journal of Superconductivity: Incorporating Novel Magnetism 16(1) (2003) 37-40. New III-V-based Magnetic Semiconductors and Their Optical and Magnetic Properties, H. Asahi, Y.K. Zhou, M. Hashimoto, R. Asano and H. Tanaka: Proc. of SPIE 4999 (2003) 221-228. Tunable Synchrotron Radiation Used to Induce Emission from the 31 Year Isomer of 178Hf, C. B. Collins, N.C. Zoita, A.C. Rusu, M.C. Iosif, D.T. Camase, F. Davanloo, S. Emura, T. Uruga, R. Dussart, J.M. Pouvesle, C.A. Ur, I.I. Popescu, V.I. Kirischuk, N.V. Strichuk, and F.J. Agee: Europhys. Lett., 57 (2002) 677-682. Formation of Ce1-xPdxO2 - Solid Solution in Combustion Synthesized Pd/CeO2 Catalyst: XRD, XPS and EXAFS Investigation, K.R. Priolkar, P. Bera, P.R. Sarode,, M.S. Hegde, S. Emura, R. Kumashiro, and N.P.Lalla: Chem. Mater 14 (2002) 2120-2128. Structural Investigation of Combustion Synthesized Cu/CeO2 Catalyst by EXAFS and Other Physical Techniques: Formation of a Ce1-xCuxO2-Delta Solid Solusion, P. Bera, K.R. Priolkar, P.R. Sarode, M.S. Hegde, S. Emura, R. Kumashiro, and N.P. Lalla: Chem. Mater. 14 (2002) 3591-3601. Structure Analysis of Ag-In-Sb-Te Phase-change Material, H. Tashiro, M. Harigaya, Y. Kageyama, K. Ito, M. Sinotsuka, K. Tani, A. Watada, N. Yiwata, Y. Nakata and S. Emura: Jpn. J. Appl. Phys., 41 (2002) 3758-3759. Study of Local Environment of Ag in Ag/CeO2 Catalyst by EXAFS, P.R. Sarode, K. R.

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Priolkar, P. Bera, M.S. Hegde, S. Emura, and R. Kumashiro: Material Research Bulletin, 37 (2002) 1679-1690. Structural Change of Li1-xMn0.5Ni0.5O2 Cathode Materials for Lithium-Ion Batteries by Synchrotron Radiation, Y. Arachi, H. Kobayashi, S. Emura, Y. Nakata, M. Tanaka, and T. Asai: Chemistry Letters. 32 (2003) 60-61. Crystal Structure and Electronic Transport of Dy@C82, Y. Kubozono, Y. Takabayashi, K. Shibata, T. Kanbara, S. Fujiki, T. Hosokawa, S. Kashino, A. Fujiwara, S. Emura, and T. Uritsu: Phys. Rev. B, 67 (2003) 11510-1-8. Ionic Dispersion of Pt over CeO2 by the Combustion Method: Structural Investigation by XRD, TEM, XPS, and EXAFS, P. Bera, K.R. Priolkar, A. Gayen, P.R. Sarode, M.S. Hegde, S. Emura, R. Kumashiro, V. Jayaram, and G.N. Subbanna: Chem. Mater. 15 (2003) 2049-2060. Scanning Tunneling Microscopy Study on Stacking Processes of InAs Dots on GaAs (001), S. Hasegawa, O. Suekane, and H. Nakashima: Phys. Stat. Sol. (c) 0, No.4 (2003) 1125-1128. Scanning Tunneling Microscopy Study of GaAs Overgrowth on InAs Islands Formed on GaAs (001), S. Hasegawa, O. Suekane, M. Takata, and H. Nakashima: J. Crystal Growth 251 (2003) 161-165. Electric Field Emission from Nitride Semiconductor Grown on Mo Substrate, S. Nishida , T. Yamanaka , S. Hasegawa and H. Asahi: Phys. Stat. Sol. (c) 0(7) (2003) 2416-2419. Local Structure of Rare-earth-doped Diluted Magnetic Semiconductor GaGdN, M. Hashimoto, S. Emura, R. Asano, H. Tanaka, Y.K. Zhou, N. Teraguchi, A. Suzuki, Y. Nanishi, T. Honma, N. Umesaki and H. Asahi: Phys. Stat. Sol. (c) 0(7) (2003) 2650-2653. Optical and Magnetic Properties of DyN/GaN Superlattice, Y.K. Zhou, N. Teraguchi, M. Hashimoto, H. Tanaka, A. Suzuki, Y. Nanishi, and H. Asahi: Phys. Stat. Sol.(b) 240(2) (2003) 440-442. Magnetic Properties of Rare-earth-doped Semiconductor GaEuN, H. Tanaka, M. Hashimoto, R. Asano, Y. K. Zhou, H. Bang, K. Akimoto, H. Asahi: Phys. Stat. Sol. (c)0(7) (2003) 2864-2868. Magnetic Properties of Eu-doped GaN Grown by Plasma-assisted Molecular Beam Epitaxy, M. Hashimoto, A. Yanase, R. Asano, H. Tanaka, H. Bang, K. Akimoto and H.

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mailto:Dy@C82

Asahi: Jpn. J. Appl. Phys. 42 (10A) (2003) L1112-L1115. Reduced Temperature-dependence of Refractive-index in TlInGaAs Quaternary Alloys Grown on InP Substrates, A. Imada, H.-J. Lee, A. Fujiwara, S. Emura, S. Hasegawa and H. Asahi: J. Appl. Phys. 94(10) (2003) 6976-6978. Observation of Small Temperature Variation of Longitudinal-mode Peak Wavelength in TlInGaAs/InP Laser Diodes, A. Fujiwara, H.J. Lee, A. Imada, S. Hasegawa and H. Asahi: Jpn. J. Appl. Phys. 42 (11B) (2003) L1359-L1361. Temperature-Insensitive Wavelength TlInGaAs Semiconductor Lasers, S. Gonda, H. Asahi, A. Fujiwara and H.J. Lee: Recent Research Developments in Applied Physics 6 (2003) 649-661. Two-dimensional Characterization of Carrier Concentration in Metal-oxide-Semiconductor Field-effect Transistors with the Use of Scanning Tunneling Microscopy, H. Fukutome, H. Arimoto, S. Hasegawa, and H. Nakashima: J. Vac. Sci. Technol. B 22 (2004) 358-363. Review Papers Room Temperature Ferromagnetic Nitride Semiconductors Doped with Transition-metal and Rare-earth Atoms, H. Asahi and Y.K. Zhou: Osaka University Low Temperature Center News, 124 (2003) 18-21. Division of Solid State Physics and Applications, H. Asahi: Oyo Butsuri 72 (2003) 624-625. Present and Future Views of Division of Solid State Physics and Applications, H. Asahi: JSAP International No.8 (2003) 3 Books Molecular Beam Epitaxy, H. Asahi, In: Handbook of Thin Film Depositions and Applications ed. by S. Gonda (NTS, Tokyo 2003) pp.288-305. International Conferences New III-V-based Magnetic Semiconductors and Their Optical and Magnetic Properties (Invited), *H. Asahi, Y.K. Zhou, M. Hashimoto, R. Asano and H. Tanaka, SPIE Optoelectronics 2003 International Symposium, San Jose, CA, USA, January 25-31, 2003. Temperature-dependence of lasing spectrum for TlInGaAs/InP DH laser diodes and 77K CW operation, *A. Fujiwara, H.J. Lee, A. Imada and H. Asahi, 15th International Conference on Indium Phosphide and Related Materilas, Santa Barbara, California, USA, May 12-16, 2003.

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Optical Properties of the Quantum Dot Structures Self-formed in GaAs/InAs Short-period Superlattices Grown on InP(411)A Substrates, *J. Mori, T. Nakano, S. Hasegawa and H. Asahi, 15th International Conference on Indium Phosphide and Related Materilas, Santa Barbara, California, USA, May 12-16, 2003. Structural and Magnetic Properties of Rare-earth-doped Diluted Magnetic Semiconductor GaGdN, *M. Hashimoto, S. Emura, R. Asano, H. Tanaka, Y.K. Zhou, N. Teraguchi, A. Suzuki, Y. Nanishi, T. Honma, N. Umesaki and H. Asahi, 5th International Conference on Nitride Semiconductors, Nara, Japan, May 25-31, 2003. Optical and Magnetic Properties of DyN/GaN Superlattice, *Y.K. Zhou, N. Teraguchi, M. Hashimoto, H. Tanaka, A. Suzuki, Y. Nanishi, and H. Asahi, 5th International Conference on Nitride Semiconductors, Nara, Japan, May 25-31, 2003. Magnetic Properties of Rare-earth-doped Semiconductor GaEuN, *H. Tanaka, M. Hashimoto, R. Asano, Y. K. Zhou, H. Bang, K. Akimoto, H. Asahi, 5th International Conference on Nitride Semiconductors, Nara, Japan, May 25-31, 2003. Electric Field Emission from Nitride Semiconductor Grown on Mo Substrate, *S. Nishida, T. Yamanaka , S. Hasegawa and H. Asahi, 5th International Conference on Nitride Semiconductors, Nara, Japan, May 25-31, 2003. Spectral Evidence of High Crystallinity with Uniform Solid Solution of Ga1-xMnxN, *H. Harima, N. Hasuike, T. Ryoki, E. Kurimoto, M. Hashimoto, Y.K. Zhou, and H. Asahi, 5th International Conference on Nitride Semiconductors, Nara, Japan, May 25-31, 2003. X-ray Absorption Studies of Combustion Synthesized Cu/CeO2 Catalysts, *K.R. Priolkar, P. Bera, P.R. Sarode, M.S. Hegde, S. Emura, and R. Kumashiro, International Symposium on Recent Advances in Inorganic Materials, India Institute of Technology Bombay, Mumbai, India, December 11-13, 2002. Size Effect on X-ray Absorption Spectra of Iron Nitride Nano Particles, *T. Nakagawa, M. Kano, K. Nishimaki, T. Yamamoto, and S. Emura, 6th International Conference on Nanostructured Materials, Orlando, Florida, USA, June 16-21, 2002. High-temperature structure of Sc2O3-doped ZrO2, *Y. Arachi, M. Suzuki, T. Asai, S. Emura, T. Kamiyama, and F. Izumi, 14th International Conference on Solid State Ionics, Monterey, California, USA, June 22 27, 2003. Possibility of XAFS Spectra Detection by NEET Nuclear XAFS -, *S. Emura, Carl B. Collins, N.C. Zoita, A.C. Rusu, F. Davanloo, T. Uruga, Y. Yoda, J.M. Pouvesle, C.A. Ur, I.I. Pepescu, V.I. Kirischuk, N.V. Strilchuk, and F.J. Agee, 12th International

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Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22-27, 2003. Local Environments of Cu+ in Dilute System NaCl:Cu+ and the first Principal Calculation of Its environment, *S. Emura and Y. Nakata, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22-27, 2003. Orbital Ordering in Pr0.5Sr0.5MnO3: Pr K-edge XAFS Study, *K.R. Priolkar, V.D. Kulkarmi, P.R. Sarode, R. Kumashiro, and S. Emura, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22 -27, 2003. Pseudo Jahn Teller Effect Observed in Eu@C60, *S. Emura, K. Shirai, and Y. Kubozono, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22 -27, 2003. XAFS Study on Li1-xNi0.5Mn0.5O2 Cathode Material for Lithium-Ion Batteries, *Y. Arachi, H. Kobayashi, S. Emura, Y. Nakata, M. Tanaka, and T. Asai, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22 -27, 2003. Site-selective and Valence-selective Structural Analysis around Monovalent Copper-Ion Exchanged in ZSM-5-type Zeolite by Synchrotron-light-induced XEOL Detection Method, *Y. Kuroda, S. Emura, R. Kumashiro, T. Uruga, and M. Nagao, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22 -27, 2003. Adsorption Site of Cs+ in Smectite Hydrate: Dertermination by XAFS, *M. Nakano, K.Kawamira, S. Emura, H. Tanida, and K.Uchida, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22 -27, 2003. On XAFS Spectra by the Secondary Processes Detection such as Fluorescence, Photo-conductivity, displacement Current and Photo-electron, *S. Emura, Y. Nakata, Y. Nishuhata, and Y. Ito, 12th International Conference on X-ray Absorption Fine Structure, Malm, Sweden, June 22 -27, 2003, 1.3-1.6 m Wavelength Control of Light Emission from the Quantum Dots Self-formed in GaAs/InAs Short-period Superlattices Grown on InP(411)A Substrates, *J. Mori, T. Nakano, S. Hasegawa, H. Asahi, 11th International Conference on Modulated Semiconductor Structures, Nara, Japan, July 14-18, 2003. Electric Field Emission from Nitride Semiconductor Grown on Mo Substrate, *S. Nishida, T. Yamanaka, S. Hasegawa, and H. Asahi, 5th International Conference on Nitride Semiconductors, Nara, Japan, May 25-31, 2003. Optical Properties of the Quantum Dot Structures Self-formed in GaAs/inAs Short-

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period Superlattices Grown on InP(411)A Substrates, *J. Mori, T. Nakano, S. Hasegawa, and H. Asahi, 15th International Conference on Indium Phosphide and Related Materials, Santa Barbara, California, USA, May 12-16, 2003. Temperature-dependence of Lasing Spectrum for TlInGaAs/InP DH Laser Diodes and 77 K CW Operation, *A. Fujiwara, H. J. Lee, A. Imada, S. Hasegawa, K. Oe, S. Gonda, and H. Asahi, 15th International Conference on Indium Phosphide and Related Materials, Santa Barbara, California, USA, May 12-16, 2003. Two-dimensional Characterization of Carrier Concentration in MOSFETs with the Use of Scanning Tunneling Microscopy, *H. Fukutome, H. Arimoto, S. Hasegawa, and H. Nakashima, The 7th Int. Workshop On Fabrication, Characterization, and Modeling Of Ultra-Shallow Doping Profiles In Semiconductors, Santa Cruz, USA, 2003. Delineation of Electrostatic Potential in 0.1-m MOSFETs by Cross-sectional Scanning Tunneling Microscopy, *S. Hasegawa, T. Okui, and H. Nakashima, 2003 International Conference on Characterization and Metrology for ULSI technology, Austin, USA, March 24-28, 2003. New III-V-based Magnetic Semiconductors and Their Optical and Magnetic Properties, *H. Asahi, Y.K. Zhou, M. Hashimoto, H. Tanaka, M.S. Kim, S. Emura and S. Hasegawa, Gordon Research Conference on the Chemistry of Electronic Materials, Conneticut College, New London, CT, USA, July 13-18, 2003. Migration Enhanced Epitaxy (MEE) Growth of Five-Layer Asymmetric Coupled Quantum Well (FACQW) and its Cross-sectional STM Observation, *J.H Noh, S. Hasegawa, T. Suzuki, T. Arakawa, K. Tada and H. Asahi, Fifth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Max-Planck-Institute Stuttgart, Stuttgart, Germany, October 13-14, 2003. Magnetic, Optical and Transport Properties of Magnetic Semiconductor Heterostructure DyN/GaN, *M.S. Kim, Y.K. Zhou, X.J. Li, and H. Asahi, The 2nd Asian International Symposium on the Science of Engineering Ceramics (EnClera2003, CUP-10), Gamagori, Shizuoka, November 10-12, 2003. MBE Growth of Magnetic Semiconductor GaCrN and Their Magnetic and Optical Properties, *Y. Osumi, M. Hashimoto, H. Tanaka, Y.K. Zhou, S. Hasegawa and H. Asahi, The 2nd Asian International Symposium on the Science of Engineering Ceramics (EnClera2003, CUP-10), Gamagori, Shizuoka, November 10-12, 2003. Barrier Height Control for Electron Field Emission by Growing Ultra Thin AlN Layer on GaN/Mo, *S. Nishida, T. Yamashita, S. Hasegawa and H. Asahi, The 7th International Conference on Atomically Controlled Surfaces, Interfaces and

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Nanostructures, Nara, Japan, November 16-20, 2003. Fabrication of Cr-doped GaN/AlN Quantum Dots by RF Molecular Meam Epitaxy, *Y. Osumi, H. Munakata, S. Hasegawa and H. Asahi, International Symposium on Scientific and Industrial Nanotechnology 2003, Osaka, Japan, December 8-9, 2003. Optical Properties of TlInGaAs Films Grown on (100) InP Substrates, *A. Imada, H. J. Lee, A. Fujiwara, T. Mukai, S. Hasegawa and H. Asahi, International Symposium on Scientific and Industrial Nanotechnology 2003, Osaka, Japan, December 8-9, 2003. Electric Field Emission Properties of GaN Films on Mo Substrates, *T. Yamashita, S. Nishida, S. Hasegawa and H. Asahi, International Symposium on Scientific and Industrial Nanotechnology 2003, Osaka, Japan, December 8-9, 2003. Optical Characterization of New GaN-based Ferromagnetic Semiconductor GaCrN Grown by Molecular Beam Epitaxy, *S. Kimura, Y.K. Zhou, M.S. Kim, X.J. Li, A. Kaneta, Y. Kawakami, Sg. Fujita, S. Emura, S. Hasegawa and H. Asahi, International Symposium on Scientific and Industrial Nanotechnology 2003, Osaka, Japan, December 8-9, 2003. Evaluation of Device Configurations of 0.1 m MOSFETs by Scanning Tunneling Microscopy, *W. Doi, S. Hasegawa, T. Okui, H. Nakashima, and H. Asahi, 11th International Colloquium on Scanning Probe Microscopy, Izu-Atagawa, Shizuoka, December 11-13, 2003. Cross-sectional STM Study of Five-layer Asymmetric Coupled Quantum Well (FACQW) Grown by Migration Enhanced Epitaxy (MEE), *J.H. Noh, S. Hasegawa, T. Suzuki, T. Arakawa, K. Tada and H. Asahi, 11th International Colloquium on Scanning Probe Microscopy, Izu-Atagawa, Shizuoka, December 11-13, 2003. Growth and Characterization of New III-V-based Magnetic Semiconductors for Application to Semiconductor Spintronics Devices (Invited), *H. Asahi, Y.K. Zhou, M. Hashimoto, H. Tanaka and S. Emura, 12th International Workshop on The Physics of Semiconductor Devices (IWPSD-12), Chennai, India, December 16-20, 2003. Accelerated Decay of The 31-yr Isomer of Hf-178 Induced by Low-Energy Photons and Electrons, *C.B. Collins, N.C. Zoita, F. Davanloo, S. Emura, Y. Yoda, T. Uruga, B. Patterson, B. Schmitt, J.M. Pouvesle, I.I. Popescu, V.I. Kirischuk, and N.V. Strilchuk, The Twelfth International Laser Physics Workshop (LPHYS03), Hamburg, Germany, August 25-29, 2003. Accelerated Emission from Isomeric Nuclei, *C.B. Collins, N.C. Zoita, F. Davanloo, S. Emura, Y. Yoda, T. Uruga, B. Patterson, B. Schmitt, J.M. Pouvesle, I.I. Popescu, V.I.

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Kirischuk, and N.V. Strilchuk, The ISRP9 Conference, Cape Town South Africa July 2003. Tunneling Magnetoresistance Effect in Magnetic Semiconductor Heterostructure DyN/GaN, *M.S. Kim, Y.K. Zhou, X.J. Li and H. Asahi: Second 21st Century COE Towards Creating New Industries Based on Inter-Nanoscience and 7th SANKEN International Symposium on Hybridization of Chemistry, Biology, and Material Science, Osaka, Japan January 13-14, 2004. Temperature-stability of Lasing Wavelength for TlInGaAs/InP DH Laser Diodes and 77K CW Operation, *A. Fujiwara, H.J. Lee, A. Imada, K. Mukai, S. Hasegawa, and H. Asahi: Second 21st Century COE Towards Creating New Industries Based on Inter-Nanoscience and 7th SANKEN International Symposium on Hybridization of Chemistry, Biology, and Material Science, Osaka, Japan, January 13-14, 2004. 1.3-1.5 m Wavelength Quantum Dot Light Emitting Diodes by Growing GaAs/InAs Short-period Superlattices on InP(411)A, *T. Shimada, J. Mori, S. Hasegawa and H. Asahi: Second 21st Century COE Towards Creating New Industries Based on Inter-Nanoscience and 7th SANKEN International Symposium on Hybridization of Chemistry, Biology, and Material Science, Osaka, Japan, January 13-14, 2004. Luminescence from the Gd Site in the GaGdN Dilute Magnetic Semiconductor, *S. Emura, Y.K. Zhou, M. Hashimoto, H. Tanaka, M.S. Kim, S. Kimura, S. Shanthi, X.J. Li, N. Teraguchi, A. Suzuki, A. Yanase, and H. Asahi: Second 21st Century COE Towards Creating New Industries Based on Inter-Nanoscience and 7th SANKEN International Symposium on Hybridization of Chemistry, Biology, and Material Science, Osaka, Japan, January 13-14, 2004. Contributions to International Conferences and Journals H. Asahi 15th International Conference on Indium Phosphide and Related

Materials (International Steering Committee Co-chair, Program Committee)

H. Asahi 4th International Conference on Nitride Semiconductors (Program Committee)

H. Asahi 11th International Colloquim on Scanning Probe Microscopy (Organizing Committee, Management Committee General Affairs, Publication Committee)

H. Asahi The Seventh International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (Program Committee)

H. Asahi 16th International Conference on Indium Phosphide and Related Materials (International Steering Committee, Organizing Committee)

H. Asahi International Conference on Nanospintronics Design and Realization (Organizing Committee)

H. Asahi International Workshop on Nitride Semiconductors (IWN-2004)

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(International Steering Committee) H. Asahi Japan. J. Appl. Phys. (Editor) H. Asahi Current Applied Physics (Editor) H. Asahi J. of Materials Science: Materials in Electronics (Editor) H. Asahi e-Journal of Surface Science and NanotechnologyAdvisary Board Publications in Domestic Meetings The Japan Society of Applied Physics 23 papers Electronic Materials Symposium 4 papers Symposium on PASPS 1 paper The Physical Society of Japan 1 paper Academic Degrees

Master Degree of Engineering A. Imada Study on Optical Properties of TlInGaAs on InP Substrates H. Tanaka Study on Crystal Growth and Characterization of GaN-Based Diluted

Magnetic Semiconductors Master Degree of Science Y. Osumi Study on Fabrication of Cr-Doped GaN Quantum Dots by MBE and

Their Characterization S. Nishida Field Emission from Nitride Semiconductors on Metal Substrates Doctor Degree of Engineering J. Mori Fabrication of III-V Semiconductor Short Period Superlattice

Quantum Dot Structures on High Index Plane Substrates and Their Device Applications

H.J. Lee Study on Tl-Based Semiconductors and Their Device Applications Doctor Degree of Science M. Hashimoto Study on Properties of GaN-Based Diluted Magnetic Semiconductors Sponsorship Grant-in-Aid for Scientific Research on the Priority Area (A) (2) H. Asahi Study on Temperature-Independent Lasing Wavelength

Semiconductor Laser Diodes in the Wide Wavelength Region

3,000,000

Y.K. Zhou Study on Synthesis of GaN-Based Transparent Ferromagnetic Semiconductors

2,200,000

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Grant-in-Aid for Scientific Research (B) (2) H. Asahi Study on Applications of Polycrystalline Nitride

Semiconductors to Field Emission Electron Source and Visible Fluorescent Substance

9,300,000

S. Hasegawa Nano-Magnetic Characterization of Diluted Magnetic Semiconductors by Spin-Polarized Scanning Tunnel Spectroscopy

8,200,000

Grant-in-Aid for Scientific Research (C) (2) S. Emura Study on the Local Atomic Arrangement and the Origin

of Magnetism of GaN-Based Ferromagnetic Semiconductors by XAFS and XMCD

3,100,000

Grant-in-Aid for Scientific Research on Special Research Fellow J. Mori Study on Quantum Dot Structures Self-Formed in the

Short-Period Superlattices on High-Index Surface Substrates and their Application to Infrared Region Lasers

900,000

Entrusted Research S. Hasegawa Nanoscale Profiling of Sub-Micron Si Devices by

Scanning Probe Microscopy 8,400,000

Other Research Fund H. Asahi MEXT Special Coordination

Funds for Promoting Science and Technology (H. Kasai)

Design and Invention of Spintronics

25,395,000

Department of Semiconductor Electronics Professor: Kazuhiko MATSUMOTO Associate Professor: Koichi INOUE Research Associates: Kenzo MAEHASHI, Yasuhide OHNO Under Graduate Students: Kazuki NARUMI, Yasuyuki FUJIWARA Supporting Staff: Ayumi OKANO Outlines

Quantum-effect devices are expected to show superior properties. In order to realize these quantum-effect devices, we study the basic problems in the carbon nanotube, physics of quantum structures and surfaces and interfaces using Raman spectroscopy, photoelectron spectroscopy, electron diffraction, scanning probe microscopy, and photoluminescence. The research activities include formation and characterization of single electron devices using carbon nanotube, coherent ballistic transport of carrier, and atomic and electronic structures of surfaces and interfaces. Current Research Programs

1, The growth control of the carbon nanotube by the patterned catalyst was performed

for the fabrication of the field effect transistor and single electron transistor, which was used to investigate the transfer property of the nanotube. The characterization of thermally grown carbon nanotube was examined by the Raman shift spectroscopy. The bundle of the hydrogen terminated carbon nanotube was found to show the photoluminescence characteristics even at room temperature.

2, The chirality of the carbon nanotube was first controlled by the irradiation of the

laser beam with the specific wave length in atmosphere. The laser power was selectively absorbed by the carbon nanotube with the specific chirality, i.e., the specific energy band gap and burned out in the air. This method could selectively remove the carbon nanotube with the specific chirality. Publications Original Papers Magnetoresistance in a GaAs-AlGaAs Two-dimensional Periodic Potential Fabricated by AFM Local Anodization, K. Oto, K. Shibuya, K. Matsumoto and K. Murase, : Microelectronic Engineering, 63 (2003) 253-258. Single Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel, K. Matsumoto, S. Kinoshita, Y. Gotoh, K. Kurachi, T. Kamimura, M. Maeda, K. Sakamoto, M. Kuwahara, N. Atoda and Y. Awano : Jpn.J. Appl. Phys.,Vol.42, [Part 1, No.4B], (2003) 2415-2418.

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International Conference

Defective Carbon Nanotube Devices,(Invited), *K. Matsumoto, Device Research Conference (DRC) , Utah University, Utah,USA,July 2,2003. Temperature Dependence of Carbon Nanotube Channel Single Elewctron Transistor, K. Matsumoto and *T. Kamimura, The 11th International Conference on Modulated Semiconductor Structures (MSS 11), Naraken New Public Hall,Nara,Japan,July 17,2003. Carbon Nanotube Nanoelectron Devices, *K. Matsumoto, CREST & QNN03 Joint International Workshop, Awaji Yumebutai International Conference Center, Hyogo,Japan,July 21,2003. High Sensitive Photo-detectors by the Combination of Carbon Nanotubes and Photo-materials, *Y. Nagamune, T. Kamimura, and K. Matsumoto, CREST & QNN03 Joint International Workshop, Awaji Yumebutai International Conference Center, Hyogo,Japan, July 21 2003. Improvement of Carbon Nanotube Channel Single Electron Transistor Characteristics by Ultra-low Energy Nitrogen-ion Irradiation, *T. Kamimura, .K. Yamamoto, and K. Matsumoto, CREST & QNN03 Joint International Workshop, Awaji Yumebutai International Conference Center, Hyogo,Japan, July 21 2003. Low-temperature Transport Properties of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition, *T. Yamaguchi, K. Ono, S. Tarucha, T. Kamimura, and K.Matsumoto,CREST & QNN03 Joint International Workshop, Awaji Yumebutai International Conference Center, Hyogo,Japan, July 21 2003. Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel, *T. Kamimura, K. Yamamoto, K. Matsumoto, The 2003 International Conference on Solid State Devices and Materials, Tokyo, Sep.17,2003. Defective Carbon Nanotube Channel Single Electron Transistor with Ultra-High Coulomb Energy of 5000K(Invited), K. Matstumoto, TNT03 (Trend in Nano Technology 2003), Samaranka, Spain, Sep.15,2003. Defective Carbon Nanotube Channel Single Electron Transistor with Ultra-High Coulomb Energy of 5000K and its Applications(Invited), K. Matstumoto, 50th American Vacuum Society Meeting, Baltimore Convention Center ,USA, Nov.5,2003. Ultra-low Energy Nitrogen-ion Irradiation for Quantum Dots Size Control in Carbon Nanotube Channel Room Temperature Single Electron Transistor, *T. Kamimura, K. Yamamoto, K. Matsumoto, The 2nd Internationa Symposium on "Future-oriented Interdisciplinary Materials Science" FIMS2003,Epochal Tsukuba International ongress Center,Tsukuba,Japan, Nov.10,2003.

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Carbon Nanotube Single Electron Transistor with Ultra-High sensitivity for Optical and Bio-Sensor, K. Matsumoto,International Workshop on Multi Processing Technology 2003 (IWMPT 2003), World Convention Center Summit,Miyazaki,Japan,Nov.10,2003 Application of RT Carbon Nanotube Single Electron Transistor to Methanol Sensor, *K.Kurachi, M.Torigoe, K.Matsumoto,Functional Semiconductor Nano Structure 2003 (FSNS 2003), NTT Basic Research Laboratories,Japan,Nov.14,2003. Application of Carbon Nanotube Single Electron Transistor with Ultra-High Coulomb Energy(Invited), K. Matsumoto,Functional Semiconductor Nano Structure 2003 (FSNS 2003, NTT Basic Research Laboratories,Japan, Nov 14,2003. Application of Carbon Nanotube Quantum Dot to Single Electron Transistor with Ultra-High Coulomb Energy of 5000K(Invited), K. Matsumoto, ACSIN-7 (7th International Conference on Atomically Controlled Surface, Interface and Nanostructures), Naraken New Public Hall,Nara,Japan, Nov.19,2003 Optical Sensor and Bio Sensor Applications using Carbon Nanotube Channel Single Electron Transistor,K.Matsumoto, Y. Nagamune, A. Kojima, NPMS-6/SIMD-4 2003,Six International Conference on new phenomena in Mesoscopic Structures, Fourth International Conference on Surface and Interface of Mesoscopic Devices,Wailea Marriot Resort,USA,Dec.3,2003. Carbon Nanotube FET/SET with Ultra-High Sensitivity for Sensor Application, K. Matsumoto, K. Inoue, K. Maehashi, Y. Ohno,SANKEN COE/Nanotechnology Symposium,ISIR,Osaka,Japan,Dec.9-10,2003. Polarization Control of Vertical Cavity Surface Emitting Laser Structure by Using Self-organized Quantum Wires Grown on (775)B-oriented GaAs Substrate by Molecular Beam Epitaxy, *Y. Ohno, Y. Takasuka, M. Ogura,K. Komori, S. Shimomura, S. Hiyamizu, 2003 North American Conference on Molecular Beam Epitaxy, keystone,Colorado,USA. Sep.28,2003. Contributions to International Conference and Journals K. Matsumoto CREST & QNN Joint International Workshopthe vice chairperson K. Matsumoto The 11th International Conference on Modulated Semiconductor

Structures(MSS 11)Organizing committee K. Matsumoto Functional Semiconductor Nano Structure 2003Organizing committee K. Matsumoto 7th International Conference on Atomically Controlled Surface, Interface and

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Nanostructures Organizing committee Publications in Domestic Meetings The Japan Society of Applied Physics Physical Society of Japan

17 papers 1 paper

Sponsorship Cooperative Research K. Matsumoto Mitsubishi Chemical Bio-sensor by carbon nanotube 20,000,000 Corpration single electron transistor at room

temperature Other Research Fund K.Matsumoto Japan Science and Carbon nanotube single electron 92,000,000

Technology Agency single spin measurement systems

K.Matsumoto Special Coordination Fund For Promoting Carbon nanotube electronics 30,000,000 Science and Technology

Department of Condensed Matter Physics Professor: Associate Professors: Visiting Scientist: Research Technical Experts:

Post Doctoral Fellows:

Research Student: Graduate Students:

Under Graduate Student: Support Staff:

Hiroshi KATAYAMA-YOSHIDA Hisatomo HARIMA, Yoshitada MORIKAWA Shunichi YANAGIYA Kiichi AMAYA, Ayao OKIJI, Mitsuhiro MOTOKAWA Akira MASAGO, Van An DINH, Hiroyuki NAKAYAMA, Ikutaro HAMADA YunHee CHANG Takayoshi MATSUMURA, Naoki MITSUDA, Kunihiko YAMAUCHI, Hiroki FUNASHIMA, Hideyuki MATSUOKA, Yuki OHISHI, Michito SUZUKI, Masayoshi SEIKE, Toshiyuki MICHIKITA, Hidetoshi KIZAKI, Kazuhide KENMOCHI, Masayuki TOYODA, Tetsuya FUKUSHIMA Hideaki MOTOSHIMA Mika ASADA

Outlines The primary activities of this department are theoretical study of electronic properties of condensed matters, and materials design, which predicts novel materials possessing desired properties for applications. In addition to model analyses which extract the essence of materials properties, quantum simulations are used for the study, with the methods of computational physics reflecting a recent remarkable progress of computing ability. Theoretical approaches are tried to predict materials which meet requirements from application areas by first-principles calculations using atomic numbers only as parameters. Current Research Programs 1. Ab intio Molecular Dynamic Simulation of Electronic Excitation-induced Atomic Migration. We have developed new simulation method for the application of the electronic excitation-induced atomic migration, and applied for the materials design to use the atomic migration through the metastable atomic position. We have designed new fabrication process from graphite to diamond at the normal condition by using the core electron excitations. 2. Materials Design for the High-efficient Amorphous Silicon Solar Cells. We have proposed a mechanism of photo-induced degradation for amorphous silicon solar cells based upon ab initio molecular dynamics simulation. In this mechanism, the conversion from the negative effective U dangling bond to the positive effective U dangling bond is the key point to understand the mechanism. We proposed a new

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mechanism of the CN treatment to avoid the photo-induced degradation in silicon-based solar cells. 3. Spintronics and Materials Design Using Semiconductor Nanostructures. Based upon ab initio electronic structure calculation, we have proposed the materials design to control the spin interaction for II-VI and III-V compound semiconductors. We have designed the transparent half-metallic ferromagnets for GaN-, AlN-, ZnO-, ZnS-based diluted magnetic semiconductors. We also design the p-type and n-type carrier-concentration dependence of Curie temperature (Tc) and 3d transition atom dependence of Tc in above diluted ferromagnetic semiconductors. New functional 4d-transition-metal (4d-TM)-doped K2S diluted magnetic semiconductors with transparent and half-metallic ferromagnetism are designed based upon the first principles calculations. We have systematically investigated the magnetism in 4d-TM-doped K2S DMSs. K2S is a transparent semiconductor with anti-CaF2 crystal structure and has large lattice spacing due to its large ionic radius of K. It is found that Zr-, Nb-, Tc-, Ru- and Rh-doped K2S show the half-metallic and high-spin ferromagnetism and that Zr- or Nb-doped K2S are promising candidate for high-Tc ferromagnetic DMSs with transparecy and large magneto-optical effect. 4. Materials Design and Valence Control of Wide Band-gap Semiconductors. Based upon ab initio electronic structure calculation, we have proposed codoping method for the fabrication of the low-resistive p-type CuAlO2, and n-type diamond. Our predictions of co-doping for the valence control are confirmed by the experiment. We have calculated the formation energy of P, N, and B in diamond, and oxygen-interstitial, Cu-vacancy, Al-vacancy, Be-acceptor, Mg-acceptor in CuAlO2.We also proposed the possibility of high efficient thermo-electric material (ZT>3) and transparent superconductivity upon slightly p-type or heavily p-type doped CuAlO2. 5. Materials Design of Spin and Charge Control Method in Heme-protein. We proposed a new model to describe the spin (high-spin vs. low-spin ground state) and charge control (multiple charged states) in heme protein. We have studied the magnetic interaction of spins in this system and proposed a materials design for biological sensors. 6. First Principle Calculation of Electric Field Gradients The first principle calculations of electric field gradients at nucleus sites performed based on the FLAPW-LDA method for many materials. The results have been compared with the measured NQR frequencies. 7. Electronic Structure of LaRh3B2 The Fermi surfaces of LaRh3B2, which is a reference material of ferromagnetic CeRh3B2 with TC=120K, are investigated and determined. 8. Electronic Structures of Newly Reported Superconductors Electronic bandstructures have been calculated for new superconductors Y2C3 and KOs2O6. From the result, in Y2C3, C-p electrons should play a significant role in its

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superconductivity. Publications Original Papers MBE growth and properties of GaCrN, H. Hashimoto, Y.K. Xhou, M. Kanamura, H. Katayama-Yoshida and H. Asahi: J. Crystal Growth. 251 (2003) 327-330. Materials Design for Semiconductor Spintronics by Ab initio Electronic-structure Calculation (Invited), H. Katayama-Yoshida and K. Sato: Physica B327 (2003) 337-343. Engineering of Nested Fermi Surface and Transparent Conducting p-type Delafossite CuAlO2: Possible Lattice Instability or Transparent Superconductivity?, H. Katayama-Yoshida, T. Koyanagi, H. Funashima, H. Harima and A. Yanase: Solid State Commun. 126 (2003) 135- 139. Curie Temperatures of III-V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation (Invited), K. Sato, H. Katayama-Yoshida and P. H. Dederichs: J. Supercond. Inc. Novel Magnetism, 16 (2003) 31-35. Spin and Charge Control Method of Ternary II-VI and III-V Magnetic Semiconductors for Spintronics: Theory vs. Experiment (Invited), H. Katayama-Yoshida and K. Sato: J. Phys. Chem. Solid. 64 (2003) 1447-1452. A Structural Study of CN Treated Amorphous Silicon, Y. Yamazaki, K. Shirai and H. Katayama-Yoshida: Solid State Commun. 126 (2003) 597-600. Direct Conversion of Graphite into Diamond Through Electronic Excited States (Invited), H. Nakayama and H. Katayama-Yoshida: J. Phys:Condens. Matter 15 (2003) R1077-R1091. Charge and Spin States of Transition-Metal Atoms in a Hemoprotein Based on the Extended Haldane-Anderson Model, K. Yamauchi, H. Maehashi and H. Katayama-Yoshida: J. Phys. Soc. Japan, 72 (2003) pp.2029-2032. Materials Design of 4d-Transition-Metal-Doped Transparent and Half-Metallic Ferromagnets with K2S-Based Diluted Magnetic Semiconductors, M. Seike, A. Yanasse, K. Sato and H. Katayama-Yoshida: Jpn. J. Appl. Phys. 42 (2003) L1061 -L1063. Tc-Enhanced Codoping Method for GaAs-Based Dilute Magnetic Semiconductors, Van An Dinh, K. Sato and H. Katayama-Yoshida: Jpn. J. Appl. Phys. 42 (2003) L888-L891. Theoretical Aspect of Doping of Photovoltaic Materials (Invited), H. Katayama-Yoshida: Mat. Res. Soc. Symp. Proc. 763 (2003) B1.1, 3-12. Magnetic Impurities and Materials Design for Semiconductor Spintronics. (Invited), K.

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Sato, P. H. Dederichs, H. Katayama-Yoshida and J. Kudrnovsky: Physica B340-342 (2003) 863-869. Ab initio materials Design and Curie Temperature of GaN-based Ferromagnetic Semiconductors, K. Sato, P. H. Dederichs, K. Araki and H. Katayama-Yoshida: Phys. Stat. Sol. c, 7 (2003) 2855-2859. Unique Fermi Surfaces with Quasi-one-dimensional Character in CeRh3B2 and LaRh3B2, T. Okubo, M. Yamada, A. Thamizhavel, S. Kirita, Y. Inada, R. Settai, H. Harima, K. Takegahara, A. Galatanu, E. Yamamoto and Y. Onuki: J.Phys. Condens. Matter 15 (2003) L721-L727. Definitive Experimental Evidence for Two-Band Superconductivity in MgB2, S. Tsuda, T. Yokoya, Y. Takano, H. Kito, A. Matsushita, F. Yin, J. Itoh, H. Harima and S. Shin: Phys. Rev. Lett. 71 (2003) 127001-1-4. A de Haas-van Alphen Experiment under Pressure on CeCoIn5: Deviation from the Quantum Critical Region, H. Shishido, T. Ueda, S. Hashimoto, T. Kubol, R. Settai, H. Harima and Y. Onuki: J.Phys. :Condens. Matter 15 (2003) L499-L504. Materials Design of p-type Transparent Conducting Oxides of Delafossite CuAlO2 by Super-cell FLAPW Method, T. Koyanagi, H. Harima, A. Yanase and H. Katayama-Yoshida: J. Phys. Chem. Solids 64 (2003) 1443-1446. Photoemission Study of CeMIn5 (M=Rh, Ir): Nearly Localized Nature of f Electrons, A.-I. Fujimori, T. Okane, J. Okamoto, K. Mamiya, Y. Muramatsu, A. Fujimori, T. Narimura, K. Kobayashi, K. Shimada, H. Namatame, M. Taniguchi, H. Harima , D. Aoki, S. Ikeda, H. Shishido, Y. Tokiwa, Y. Haga and Y. Onuki: Physica B 329-333 (2003) 547-548. De Haas-van Alphen Effect of CeRhIn5 Under Pressure, H. Shishido, R. Settai, S. Araki, T. Ueda, Y. Inada, H. Harima and Y. Onuki: Physica B 329-333 (2003) 526-527. Quadrupolar Ordering in Half-integral Spin Systems, S. H. Curnoe, K. Ueda, H. Harima and K. Takegahara: Physica B 329-333 (2003) 474-475. FLAPW Electronic Band Structure of the Filled Skutterudite ThFe4P12, K. Takegahara and H. Harima: Physica B 329-333 (2003) 464-466. Conduction Bands in the Filled Skutterudites, H. Harima and K. Takegahara: J.Phys.:Condens. Matter 15 (2003) S2081-S2086. High-quality Single Crystal Growth and the Fermi Surface Property of Uranium and Cerium Compounds, Y. Onuki, Y. Haga, E. Yamamoto, Y. Inada, R. Settai, H. Yamagami and H. Harima: J. Phys. Condens. Matter 15 (2003) S1903-S1909. Magnetic Properties and Fermi Surface of YMn2, K. Nakada, H. Shimizu, H. Yamada

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and H. Harima: J Ma