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AAA COLLEGE OF

ENGINEERING AND TECHNOLOGY

KAMARAJ EDUCATIONAL ROAD,

AMATHUR, SIVAKASI - 626123.

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERINGLABORATORY MANUAL CUM OBSERVATION

EC6361 ELECTRONICS LABORATORY AAA COLLEGE OFENGINEERING AND TECHNOLOGY

KAMARAJ EDUCATIONAL ROAD,

AMATHUR, SIVAKASI 626123.

NAME

: _________________________________________________________________________________

REGISTER NUMBER: _________________________________________________ ROLL NO: __________________

BRANCH

: _________________________________________________________________________________

YEAR

: _________________________________________________________________________________

Bonafide Record of work done in the _________________________________________________________

Of AAA College of Engineering and Technology, Amathur, during the year _____________.

STAFF IN-CHARGE

HEAD OF THE DEPARTMENT

Submitted for the Practical Examination held on ___________________________ at AAA College of Engineering and Technology, Amathur,Sivakasi.

INTERNAL EXAMINER

EXTERNAL EXAMINER INDEXEx.No.DateTitle of the ExperimentPage No.MarkSignature

L1aCharacteristics of Semi conductor diode

L1bCharacteristics of Zener diode

L2aCharacteristics of a NPN Transistor under common emitter configuration

L2bCharacteristics of a NPN Transistor under common collector configuration

L2cCharacteristics of a NPN Transistor under common base configuration

L3Characteristics of JFET

L4Characteristics of UJT and generation of saw tooth waveforms

L5Design and Frequency response characteristics of a Common Emitter amplifier

L6Characteristics of photo diode & photo transistor, Study of light activated relay circuit

L7aDesign and testing of RC phase shift oscillators

L7bDesign and testing of LC oscillators

L8Single Phase half-wave and full wave rectifiers with inductive and capacitive filters

L9Differential amplifiers using FET

L10Study of CRO for frequency and phase measurements

L11Astable and Monostable multivibrators

L12Realization of passive filters

Exp.No:1

CHARACTERISTICS OF SEMICONDUCTOR DIODE

AIM:

To draw the forward & Reverse characteristics of semi conductor diode & to determine its cut-in voltage.

APPARATUS REQUIRED:

SL. NOAPPARATUS NAMERANGEQUANTITY

1RPS(0-30)V1

2Ammeter(0-30 mA) MC1

(0-100 mA) MC1

3voltmeter(0-1V) MC1

(0-30V) MC1

4Resistors1 K1

10 K1

5Diode1 N 40011

6Bread board-1

7Connecting Wires-1 set

THEORY:

A PN junction is known as a semiconductor (or) crystal diode. The outstanding property of a crystal diode is to conduct current in one direction only.

PROCEDURE:

FORWARD BIASING:On forward biasing, initially no current flows due to barrier potential. As the applied potential exceeds the barrier potential the charge carriers gain sufficient energy to cross the potential barrier and hence enter the other region. The holes, which are majority carriers in the P-region, become minority carriers on entering the N-regions, and electrons, which are the majority carriers in the N-region, become minority carriers on entering the P-region. This injection of Minority carriers results in the current flow, opposite to the direction of electron movement.

REVERSE BIASING:On reverse biasing, the majority charge carriers are attracted towards the terminals due to the applied potential resulting in the widening of the depletion region. Since the charge carriers are pushed towards the terminals no current flows in the device due to majority charge carriers. There will be some current in the device due to the thermally generated minority carriers. The generation of such carriers is independent of the applied potential and hence the current is constant for all increasing reverse potential. This current is referred to as Reverse Saturation Current (IO) and it increases with temperature. When the applied reverse voltage is increased beyond the certain limit, it results in breakdown. During breakdown, the diode current increases tremendously.

PROCEDURE:FORWARD BIAS:1. Connect the circuit as per the diagram.

2. Vary the applied voltage V in steps of 0.1V.

3. Note down the corresponding Ammeter readings I.

4. Plot a graph between V & I

OBSERVATIONS1. Find the d.c (static) resistance = V/I.

2. Find the a.c (dynamic) resistance r = V / I (r = V/I) = V2 V1 .

I 2 I13. Find the forward voltage drop = [Hint: it is equal to 0.7 for Si and 0.3 for Ge]

REVERSE BIAS:1. Connect the circuit as per the diagram.

2. Vary the applied voltage V in steps of 1.0V.

3. Note down the corresponding Ammeter readings I.

4. Plot a graph between V & I

5. Find the dynamic resistance r = V / I.CIRCUIT DIAGRAM:

Forward Bias:

Reverse bias:

MODEL GRAPH:

TABULATION:Forward bias:Sl. NoInput voltageOutput voltageOutput current

(volts)(volts)(Amps)

Reverse bias:Sl. NoInput voltageOutput voltageOutput current

(volts)(volts)(Amps)

RESULT:Forward & reverse bias characteristics of junction diode are plotted & their dynamic resistances, cut-in voltage are as follows,

Dynamic forward resistance = --------------ohm

Dynamic reverse resistance = --------------ohm

Cut-in- voltage= -------------------volt

Exp.No:1b

CHARACTERISTICS OF ZENER DIODE

AIM:

To draw the forward & reverse characteristics of zener diode. Determine its cut-in voltage & breakdown voltage.

APPARATUS REQUIRED:

Sl. NoApparatus NameRangeQuantity

1RPS(0-30) V1 No

2Voltmeter(0-3V) MC1 No

(0-30V) MC

3Ammeter(0-100mA) MC1 No

4Bread board1 No

5Resistors1 K1 No

10 K

6Zener diodeFZ5.11 No

7Connecting Wires1 set

THEORY:

A properly doped crystal diode, which has a sharp breakdown voltage, is known as zener diode.

FORWARD BIAS:

On forward biasing, initially no current flows due to barrier potential. As the applied potential increases, it exceeds the barrier potential at one value and the charge carriers gain sufficient energy to cross the potential barrier and enter the other region. the holes ,which are majority carriers in p-region, become minority carriers on entering the N-regions and electrons, which are the majority carriers in the N-regions become minority carriers on entering the P-region. This injection of minority carriers results current, opposite to the direction of electron movement.

REVERSE BIAS:

When the reverse bias is applied due to majority carriers small amount of current (ie) reverse saturation current flows across the junction. As the reverse bias is increased to breakdown voltage, sudden rise in current takes place due to zener effect.ZENER EFFECT:Normally, PN junction of Zener Diode is heavily doped. Due to heavy doping the depletion layer will be narrow. When the reverse bias is increased the potential across the depletion layer is more. This exerts a force on the electrons in the outermost shell. Because of this force the electrons are pulled away from the parent nuclei and become free electrons. This ionization, which occurs due to electrostatic force of attraction, is known as Zener effect. It results in large number of free carriers, which in turn increases the reverse saturation current

PROCEDURE:FORWARD BIAS:1. Connect the circuit as per the circuit diagram.

2. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the voltmeter till the needle of power supply shows 30V.

3. Note down the corresponding ammeter readings.

4. Plot the graph :V (vs) I.

5. Find the dynamic resistance r = V / I.

REVERSE BIAS:1. Connect the circuit as per the diagram.

2. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the voltmeter till the needle of power supply shows 30V.

3. Note down the corresponding Ammeter readings I.

4. Plot a graph between V & I

5. Find the dynamic resistance r = V / I.

6. Find the reverse voltage Vr at Iz=20 mA.

CIRCUIT DIAGRAM:

Forward bias:Reverse bias:

MODEL GRAPH:

TABULATION:

Forward bias:

Sl. NoInput voltageOutput voltageOutput current

(volts)(volts)m(Amps)

Reverse bias:

Sl. NoInput voltageOutput voltageOutput current

(volts)(volts)m(Amps)

Result:Forward and Reverse bias characteristics of the zener diode was studied andForward bias dynamic resistance = ---------------------Reverse bias dynamic resistance = ----------------------The reverse voltage at Iz =20 mA determined from the reverse characteristics of the Zener diode is --------------------------.Exp.No:2a CHARACTERISTICS OF COMMON EMITTER CONFIGURATIONAIM:

To draw the input and output characteristics of common Emitter configuration for a given transistor and find the input and output resistance.APPARATUS REQUIRED:

Sl. NoApparatus NameRangeQuantity

1RPS(0-30) V2

2Voltmeter(0-2V) MC1

(0-30V) MC

3Ammeter(0-100 A) MC1

(0-50mA) MC

4Resistor1 k,1

68k1

5TransistorBC 1071

6Bread board-1

7Connecting Wires-1 set

THEORY:

In this arrangement, input is applied between base and emitter and output is taken from the collector and emitter. Here emitter is common to both input and output circuits and hence the name common emitter connection.INPUT CHARACTERISTICS:It is the curve between base current (IR) and base emitter voltage VBE at constant collector emitter voltage (VCE).This characteristic resembles that of a forward biased diode curve.OUTPUT CHARACTERISTICS:It is the curve between collector current (IC) and collector emitter voltage (VCE) at constant base current (IB).The collector current IC varies with VCE for VCE between O and IV only. After this, collector current becomes almost constant and independent of VCE. This value of VCE upto which collector current IC changes with VCE is called the knee voltage (Vknee).PROCEDURE:I/P Char:1. Rig up the circuit as per the circuit diagram.

2. Set VCE = 5 V, Vary VBE insteps of 0.1 V & note down the corresponding IB. 3. Repeat the above procedure for 10 V, 15 V etc.

4. Plot the graph VBE Vs IB for a constant VCE

5. Find the input resistance.

Formula:VBE

Input resistanceRi=------- At constant VCE

IB

O/P Char:1. Rig up the circuit as per the circuit diagram.2.Set IB =20 micro Amps, Vary VCE insteps of 1 V & note down the corresponding IC.3. Repeat the above procedure for 40 micro Amps, 80 micro amps etc.

4. Plot the graph Vce Vs IC for a constant IB

5. Find the output resistance.

Formula:VCEOutput resistanceRo=------- At constant IB ICCIRCUIT DIAGRAM:

TABULATION:

Input characteristics:

Sl. NoVCE (V) =VCE = 5VVCE (V) =

VBE (V)IB (A)VBE (V)IB (A)VBE (V)IB (A)

Output Characteristics:Sl.IB=IB=IB=

No

VCE (V)Ic AVCE(V)IC(A)VCE(V)IC(A)

MODEL GRAPH:Input characteristics:

Output Characteristics:

RESULT:Thus the input and output characteristics were drawn.

Exp.No:2b CHARACTERISTICS OF COMMON BASE CONFIGURATION

AIM:To draw the input & output characteristics of common base configuration and find the input and output resistance.

APPARATUS REQUIRED:ApparatusRangeQuantity

TransistorBC 1471

Resistors470 _1

1.2 K_

RPS(0 30V)1

Voltmeter(0 1)V1

(0 15V)1

Ammeter(0 10 mA)1

(0 50 mA)1

Bread board-1

Connecting Wires-1 set

THEORY:In this circuit arrangement input is applied between base and emitter and output is taken from the base and collector. Here, base is common to both input and output.

INPUT CHARACTERISTICS:It is the curve between base emitter voltage (VBE) and emitter current (IE) at constant collector base voltage (VCB).

INPUT RESISTANCE:It is defined as

R VBE i IE

MODEL GRAPH:Input Characteristics:

Output Characteristics:

CIRCUIT DIAGRAM:

TABULATION:

Input Characteristics:S.NOVCB = 0VVCB = 5VVCB = 10V

VBE(V)IE(mA)VBEIEVBEIE

Output Characteristics:

S.NOIE=3mAIE=5mAIE=10mA

VCB(V)IC(mA)VCB(V)IC(mA)VCB(V)IC(mA)

RESULT:Thus the input and output characteristics of CB configuration was drawn.

Exp.No:3CHARACTERISTICS OF JUNCTION FIELD EFFECT TRANSISTORAIM:

To Plot the characteristics of given FET & determine rd, gm, , IDSS,VP.

APPARATUS REQUIRED:ApparatusRangeQuantity

RPS(0 30V)2

Resistors1K,68 K2

Ammeter(0 30 mA)1

Voltmeter0 10V1

JFETBFW101

Bread board1

Connecting Wires1 set

THEORY:

FET is a voltage operated device. It has got 3 terminals. They are Source, Drain & Gate. When the gate is biased negative with respect to the source, the pn junctions are reverse biased & depletion regions are formed. The channel is more lightly doped than the p type gate, so the depletion regions penetrate deeply in to the channel. The result is that the channel is narrowed, its resistance is increased, & ID is reduced. When the negative bias voltage is further increased, the depletion regions meet at the center & ID is cutoff completely.

PROCEDURE:DRAIN CHARACTERISTICS:1. Connect the circuit as per the circuit diagram.

2. Set the gate voltage VGS = 0V.

3. Vary VDS in steps of 1 V & note down the corresponding ID.

4. Repeat the same procedure for VGS = -1V.

5. Plot the graph VDS Vs ID for constant VGS.

OBSERVATIONS 1. d.c (static) drain resistance, rD = VDS/ID.

2. a.c (dynamic) drain resistance, rd = VDS/ID.

3. Open source impedance, YOS = 1/ rd.

TRANSFER CHARACTERISTICS:1. Connect the circuit as per the circuit diagram. 2. Set the drain voltage VDS = 5 V.

3. Vary the gate voltage VGS in steps of 1V & note down the corresponding ID.

4. Repeat the same procedure for VDS = 10V.

5. Plot the graph VGS Vs ID for constant VDS.FET PARAMETER CALCULATION:Drain Resistancd rd = VDS VGSIDTransconductance gm = D VDS VGSAmplification factor=rd . gm

TABULATION:Drain characteristics:

VGS = 0VVGS = -1V

VDS (V)ID(mA)VDS (V)ID(mA)

Transfer Characteristics:VDS = 5VVDS = 10V

VGS (V)ID(mA)VGS (V)ID(mA)

RESULT:Thus the Drain & Transfer characteristics of given FET is Plotted.

Rd =gm = =IDSS =

Pinch off voltage VP =

Exp.No:4

CHARACTERISTICS OF UJTAIM:To draw the V-I characteristics of UJT and find the peak point voltage

APPARATUS REQUIRED:ApparatusRangeQuantity

RPS(0 30V)2

Resistors470 _2

Ammeter(0 50 mA)1

Voltmeter0 15V1

UJT2 N 26461

Bread board1

Connecting Wires1 set

THEORY:Uni junction transistor (UJT) is a 3 terminal semiconductor switching device. It has only one PN junction. It has no ability to control the AC power with a small gain. It exhibits a negative resistance characteristics and hence it can be used as a oscillator.

PROCEDURE:Connections are made as per the circuit diagram. BY using RPS, the voltage VB1 B2 is kept constant, the emitter voltage (VE) and the corresponding ammeter reading (IE) are noted and tabulated. The above process is repeated for two more constant VB1 B2 values. MODEL GRAPH:

CIRCUIT DIAGRAM:

TABULATION:

S.NOVB1B2 = 4VVB1B2 = 7VVB1B2 = 10V

VEIEVEIE(mA)VE(V)IE(mA)

(V)(mA)(V)

CIRCUIT DESIGN:1. When no voltage applied to UJT, the interbase resistance is given by

RBB = RB1 + RB2 2. If a voltage VBB is applied between the bases with emitter open. The voltage will divide up across RB1 and RB2,

Voltage across RB1, V1 =( RB1 / (RB1 + RB2))VBB = V1 / VBB.

= RB1 / (RB1 + RB2) V1 = VBB3. If rising positive voltage is applied to the emitter, the diode become forward biased when input voltage exceeds VBB by VD.

Vp = VBB + VDVp peak point voltage

VD forward voltage drop across the diode (for si 0.7v)

Vp = VBB + VD 0.65 x 10 + 0.7 (VB1 B2 = 10v)

6.5 + 0.7

Vp = 7.2v

RESULT:Thus the characteristic of UJT was obtained.

Exp.No:5DESIGN AND FREQUENCY RESPONSE CHARACTERISTICS OF COMMON EMITTER AMPLIFIERAIM:To design and frequency response characteristics of common emitter amplifier.APPARATUS REQUIRED:ApparatusRangeQuantity

RPS(0 30V)2

Resistors1K,20 K2

Ammeter(0 2 mA)1

Voltmeter0 1V1

TransistorBC 5471

Bread board1

Connecting Wires1 set

THEORY:

Bipolar junction transistor (BJT) is a three terminal (emitter, base,collector) semiconductor device. There are two types of transistors namely NPN and PNP. It consists of two P-N junctions namely emitter junction and collector junction. In Common Emitter configuration the input is applied between base and emitter and the output is taken from collector and emitter. Here emitter is common to both input and output and hence the name common emitter configuration. Hybrid means mixed. Since these parameters have mixed dimensions, they are called hybrid parameters. The major reason for the use of hparameters is the relative ease with which they can be measuredPROCEDURE:

Input Characteristics

1. Connect the transistor in CE configuration as per circuit diagram

2. Keep output voltage VCE = 1V by varying VCC.

3. Varying VBB gradually, note down both base current IB and base

emitter voltage (VBE).

4. Repeat above procedure (step 3) for various values of VCE.

Output Characteristics

1. Make the connections as per circuit diagram.

2. By varying VBB keep the base current IB = 20A.

3. Varying VCC gradually, note down the readings of collector current

(IC) and collector-emitter voltage (VCE).

4. Repeat above procedure (step 3) for different values of IE.CIRCUIT DIAGRAM:

MODEL GRAPH:

Input characteristics:

Output characteristics:

TABULATION:

CALCULATIONS:

a) Input impedance (hie) = Vbe/Ibe, Vce constant.

b) Forward current gain(hfe) = Ic/Ib, Vce constant

c) Output admittance(hoe) = Ic / Vce , Ib constant

d) Reverse voltage gain(hre) = Vbe/ Vce, Ib constantRESULT:

Thus the hybrid parameters of CE configuration are determined.

a) Input impedance (hie) = ____________

b) Forward current gain(hfe) = ________

c) Output admittance(hoe) = __________-1d) Reverse voltage gain(hre) = ____________Exp.No:6CHARACTERISTICS OF PHOTODIODE AND PHOTOTRANSISTORAIM:

1. To study the characteristics of a photo-diode.

2. To study the characteristics of phototransistor.

APPARATUS REQUIRED:APPARATUS REQUIRED:COMPONENTS REQUIRED:

S.NameRangeTypeQtyS.NameRangeTypeQty

No.No.

1R.P.S(0-30)V11Photo1

diode

2Resistor1K2

2Ammeter(030)mA1

3Bread1

Board

3Voltmeter(030)V14Photo1

transistor

THEORY:

PHOTODIODE:A photo diode is a two terminal pn junction device, which operates on reverse bias. On reverse biasing a pn junction diode, there results a constant current due to minority charge carriers known as reverse saturation current. Increasing the thermally generated minority carriers by applying external energy, i.e., either heat or light energy at the junction can increase this current. When we apply light energy as an external source, it results in a photo diode that is usually placed in a glass package so that light can reach the junction. Initially when no light is incident, the current is only the reverse saturation current that flows through the reverse biased diode. This current is termed as the dark current of the photo diode. Now when light is incident on the photo diode then the thermally generated carriers increase resulting in an increased reverse current which is proportional to the intensity of incident light. A photo diode can turn on and off at a faster rate and so it is used as a fast acting switch.

CIRCUIT DIAGRAM:

TABULATION:S.No.VOLTAGECURRENT

(In Volts)(In mA)

MODEL GRAPH:

THEORY:PHOTOTRANSISTOR:It is a transistor with an open base; there exists a small collector current consisting of thermally produced minority carriers and surface leakage. By exposing the collector junction to light, a manufacturer can produce a phototransistor, a transistor that has more sensitivity to light than a photo diode. Because the base lead is open, all the reverse current is forced into the base of the transistor. The resulting collector current is ICeo = dcIr. The main difference between a phototransistor and a photodiode is the current gain, dc. The same amount of light striking both devices produces dc times more current in a phototransistor than in a photodiode.

CIRCUIT DIAGRAM:MODEL GRAPH:

TABULATION:

S.No.VCEIC

(in Volts)(in mA)

PROCEDURE:PHOTO DIODE:1. Rig up the circuit as per the circuit diagram.

2. Maintain a known distance (say 5 cm) between the DC bulb and the photo diode.

3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode insteps of 1V and note down the corresponding diode current, Ir.

4. Repeat the above procedure for the various voltages of DC bulb.

5. Plot the graph: VD vs. Ir for a constant DC bulb voltage.

PHOTOTRANSISTOR:1. Rig up the circuit as per the circuit diagram.

2. Maintain a known distance (say 5 cm) between the DC bulb and the phototransistor.

3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode in steps of 1V and note down the corresponding diode current, Ir.

4. Repeat the above procedure for the various values of DC bulb.

5. Plot the graph: VD vs. Ir for a constant bulb voltage.

RESULT:Thus the characteristics of photo diode and phototransistor are studied.

Exp.No:7aDESIGN AND TESTING OF RC PHASE SHIFT AND LC OSCILLATORSAIM:To construct and draw characteristics of RC Phase Shift Oscillator.

APPARATUS REQUIRED:S. NO.APPARATUS REQUIREDRANGEQUANTITY

1.TransistorBC 1081

2.Capacitor0.1 f4

3.Rheostat1K1

4.Resistor3.3K4

THEORY:It is a circuit which self generating some waveform like sine, triangular, and square wave etc.It is basically an amplifier circuit with positive feedback introduced. In this case the CE amplifier is followed by a frequency determining network. The R1, R2 combination provides dc potential divider bias and Ro, CE provides temperature stability and provides ac signal degeneration. The high pass or low pass RC - RC network may be used as positive feedback between input and output.

MODEL GRAPH:

PROCEDURE: Connections are made as shown in circuit diagram. Power supply is switched ON. Varying the RPS and kept at a fixed voltage between 6V 12V. Now corresponding output is taken in CRO. The amplitude and time are measured then the graph is drawn. FORMULA:F 1

2 RC 6

DESIGN:R = 200kC = 100pFF=?

F 1

2 RC 6

1

2 200 103 100 1012 6

= 3.248 kHzRESULT:Thus RC Phase Shift Oscillator characteristics were drawn and constructed.Exp.No:7aDESIGN AND TESTING OF LC OSCILLATORS

AIM:

To design and test the LC Oscillators(Colpitts and Hartley ocscillators).APPARATUS REQUIRED:S. NO.APPARATUS REQUIREDRANGEQUANTITY

1.TransistorBC 195 C1

2.Capacitor100 f,100pf,

5 f2,2,2

3.Resistor1K,10 K,33 K,25 K,2,2,2,2

4.Inductor1.5mH2

THEORY:Colpitts Oscillator:Colpitts oscillator is a radio frequency oscillator which generates a frequency of the range of (30 KHz to 30MHz). The collector supply voltage VCC is applied to the collector transistor RC parallel combination of RE = CE with resistor R1 = R2 provides the stabilized self bias. The tuned circuit consists of C1, C2 & L are extending from collector act to the base act determines basically the transistor of oscillator. The feedback is through the tank circuit itself.

Hartely Oscillator:

The tank circuit shown in the circuit consist of two coils L1 & L2. The coil L1 is inductively coupled to the coil L2 and the combination work as an auto transformer. The feedback between the o/p & i/p circuits are accomplished through auto transformer action which also introduced a phase shift of 180. The phase reversed between the o/p & i/p voltages occur because they are taken from the opposite ends of the coils (L1 & L2) with respect to the tap which is grounded. The frequency of oscillator is grounded by

PROCEDURE:

Colpitts & Hartley Oscillator:

1. Feed the output of the oscillator to a C.R.O & try to obtain a stable sine wave.

2. Measure the time period (Td) of the waveform obtained on CRO & calculate the frequency of oscillations (f=1/Td).CIRCUIT DIAGRAM:

Colpitts oscillator:

Hartley oscillator:

RESULT:

The Colpitts & Hartley oscillators have been studied.Exp.No:8aSINGLE PHASE HALF-WAVE RECTIFIERS WITH INDUCTIVE AND CAPACITIVE FILTERS

AIM:

To construct a Half wave rectifier using diode and to draw its performance characteristics.

APPARATUS REQUIRED:

S.NameRangeTypeQtyS.NameRangeTypeQty

No.No.

1Transformer230/(6-0-6)V11DiodeIN40011

2R.P.S(0-30)V2

(030)mA12Resistor1K 1

3Ammeter

(0250)A13Bread1

Board

4Voltmeter(030)V14Capacitor100f1

(02)V15CRO1

FORMULAE:WITHOUT FILTER:(i)Vrms=Vm / 2

(ii)Vdc=Vm /

(iii)Ripple Factor = (Vrms / Vdc)2 1

(iv)Efficiency=(Vdc / Vrms)2 x 100

WITH FILTER:

(i)Vrms= (Vrms2 + Vdc2)

(ii)Vrms=Vrpp / (3 x 2)

(iii)Vdc=Vm V rpp / 2

(iv)Ripple Factor =Vrms/ Vdc

PROCEDURE:WITHOUT FILTER:1. Give the connections as per the circuit diagram.

2. Give 230v, 50HZ I/P to the step down TFR where secondary connected to the Rectifier I/P.

3. Take the rectifier output across the Load.

4. Plot its performance graph.

WITH FILTER:1. Give the connections as per the circuit diagram.

2. Give 230v, 50HZ I/P to the step down TFR where secondary connected to the Rectifier I/P.

3. Connect the Capacitor across the Load.

4. Take the rectifier output across the Load.

5. Plot its performance graph.

CIRCUIT DIAGRAM:

TABULATION:

WITHOUT FILTER:

VmVrmsVdcRipple factorEfficiency

WITH FILTER:

VrmsVrppVdcRipple factorEfficiency

MODEL GRAPH:RESULT:Thus the performance characteristics of 1 Half wave rectifier was obtained.ExpNo:8b SINGLE PHASE HALF-WAVE RECTIFIERS WITH INDUCTIVE AND CAPACITIVE FILTERS

AIM:To construct a Full wave rectifier using diode and to draw its performance characteristics.

APPARATUS REQUIRED:COMPONENTS REQUIRED:

S.NameRangeTypeQtyS.NameRangeTypeQty

No.No.

1Transformer230/(6-0-6)V11DiodeIN40012

2R.P.S(0-30)V2

(030)mA12Resistor1K 1

3Ammeter

(0250)A13Bread1

Board

4Voltmeter(030)V14Capacitor100f1

(02)V15CRO1

FORMULAE:WITHOUT FILTER:(i)Vrms=Vm / 2

(ii)Vdc=2Vm /

(iii)Ripple Factor = (Vrms / Vdc)2 1

(iv)Efficiency=(Vdc / Vrms)2 x 100

WITH FILTER:

(i)Vrms=Vrpp /(2* 3)

(ii)Vdc=Vm V rpp

(iv)Ripple Factor =Vrms/ Vdc

PROCEDURE: WITHOUT FILTER:1. Give the connections as per the circuit diagram.

2. Give 230v, 50HZ I/P to the step down TFR where secondary connected to the Rectifier I/P.

3. Take the rectifier output across the Load.

4. Plot its performance graph.

WITH FILTER:1. Give the connections as per the circuit diagram.

2. Give 230v, 50HZ I/P to the step down TFR where secondary connected to the Rectifier I/P.

3. Connect the Capacitor across the Load.

4. Take the rectifier output across the Load.

5. Plot its performance graph.

CIRCUIT DIAGRAM:

TABULATION:

Without filter:

VmVrmsVdcRipple FactorEfficiency

With filter:VrmsVrppVdcRipple FactorEfficiency

MODEL GRAPH:RESULT:

Thus the performance characteristics of 1 Full wave rectifier were

obtained.

Exp.No:9

DIFFERENTIAL AMPLIFIER USING FETAIM:To construct a Differential amplifier in Common mode & Differential mode configuration and to find common mode rejection ratio.

APPARATUS REQUIRED:COMPONENTS REQUIRED:

ApparatusRangeQty

S.NoItemTypeRangeQty

1RPS(0-30)V1

1TransistorBC1071

2CRO1

2Capacitor470F1

Signal

313Resistor3.9K1

Generator

3.3K1

4DCB2

4Bread board1

5DRB2

THEORY:The Differential amplifier circuit is an extremely popular connection used in IC units. The circuit has separate inputs , two separate outputs and emitters are connected together. If the same input is applied to both inputs, the operation is called common mode. In double ended operation two input signals are applied , the difference of the inputs resulting in outputs from both collectors due to the difference of the signals applied to both the inputs. The main feature of the differential amplifier is the very large gain when opposite signals are applied to inputs as compared to small signal resulting from common input. The ratio of this difference gain to the common gain is called common mode rejection ratio.

PROCEDURE: DIFFERENTIAL MODE:1. Connect the circuit as per the circuit diagram.

2. Set V1 = 50mv and V2 =55mv using the signal generator.

3. Find the corresponding output voltages across V01 & V02 using CRO

4. Calculate common mode rejection ratio using the given formula. COMMON MODE:1. Connect the circuit as per the circuit diagram.

2. Set V1 = 50mv using the signal generator.

3. Find the output voltage across Vo using multimeter.

4. Calculte common mode rejection ratio using the given formula. CALCULATION:

Common mode rejection ratio(CMRR) = Ad / Ac Ad = Differential mode gain Ac = Common mode gain Where Ad = Vo /Vd Vo = Output voltage measured across CRO Vd = V 1 V2 , V 1 , V2 input voltage applied. Ac = Vo /Vc Vc = (V 1 + V2 )/2

CIRCUIT DIAGRAM:

Differential mode:RESULT:

Thus the differential amplifier and Differential mode configuration. Further common mode rejection ratio was found.Exp.No:10STUDY OF CRO FOR FRQUENCY AND PHASE MEASUREMENTS

Aim:To study cathode Ray Oscilloscope (CRO) and measurement of power factor using CRO.

Apparatus required:Name of the apparatusRangeTypeQuantity

S.No

1.Resistance Box1

2.Capacitance Box1

3.Inductance Box1

4.Function Generator1

5.Bread board1

Theory:The cathode ray oscilloscope is the most versatile measuring instrument available. We can measure following parameters using the CRO:

1. AC or DC voltage.

2. Time (t=1/f).

3. Phase relationship

4. Waveform calculation: Rise time; fall time; on time; off-time Distortion, etc.

We can also measure non-electrical physical quantities like pressure, strain, temperature, acceleration, etc., by converting into electrical quantities using a transducer.Major blocks:1. Cathode ray tube (CRT)

2. Vertical amplifier

3. Horizontal amplifier

4. Sweep generator

5. Trigger circuit

6. Associated power supply.

1. The cathode ray tube is the heart of CRO. The CRT is enclosed in an evacuated glass envelope to permit the electron beam to traverse in the tube easily. The main functional units of CRO are as follows.

Electron gun assembly

Deflection plate unitScreen.2. Vertical Amplifier is the main factor in determining the bandwidth and sensitivity of an oscilloscope. Vertical sensitivity is a measure of how much the electron beam will be deflected for a specified input signal. On the front panel of the oscilloscope, one can see a knob attached to a rotary switch labeled volts/division. The rotary switch is electrically connected to the input attenuation network. The setting of the rotary switch indicates what amplitude signal is required to deflect the beam vertically by one division.

3. Horizontal amplifier Under normal mode of operation, the horizontal amplifier will amplify the sweep generator input. When the CRO is being used in the X-Y mode, the horizontal amplifier will amplify the signal applied to the horizontal input terminal. Although the vertical amplifier mush be able to faithfully reproduce low-amplitude and high frequency signal with fast rise-time, the horizontal amplifier is only required to provide a faithful reproduction of the sweep signal which has a relatively high amplitude and slow rise time.

4. Sweep generator and Trigger circuit These two units form the Signal

Synchronization unit of the CRO.

5. Associated Power Supply: The input signal may come from an external source when the trigger selector switch is set to EXT or from low amplitude AC voltage at line frequency when the switch is set to LINE or from the vertical amplifier when the switch is set to INT. When set for INT (internal triggering), the trigger circuit receives its inputs from the vertical amplifier.

Major Blocks in a Practical CROA CRO consists of a cathode ray tube (CRT) and additional control knobs. The main parts of a CRT are:1.Electron gun assembly.2.Deflection plate assembly.3. Fluorescent screen.

Electron Gun Assembly: The electron gun assembly produces a sharp beam of electrons, which are accelerated to high velocity. This focused beam of electrons strike the fluorescent screen with sufficient energy to cause a luminous spot on the screen. Deflection plate assembly: This part consists of two plates in which one pair of plates is placed horizontally and other of plates is placed vertically. The signal under test is applied to vertical deflecting plates. The horizontal deflection plates are connected to a built-in ramp generator, which moves the luminous spot periodically in a horizontal direction from left to right over the screen. These two deflection plates give stationary appearance to the waveform on the screen. CRO operates on voltage. Since the deflection of the electron beam is directly proportional to the deflecting voltage, the CRT may be used as a linear measuring device. The voltage being measured is applied to the vertical plates through an iterative network, whose propagation time corresponds to the velocity of electrons, thereby synchronizing the voltage applied to the vertical plate with the velocity of the beam.Synchronization of input signal: The sweep generator produces a saw tooth waveform, which is used to synchronize the applied voltage to obtain a stationary-applied signal. This requires that the time base be operated at a submultiples frequency of the signal under measurement. If synchronization is not done, the pattern is not stationary, but appears to drift across the screen in a random fashion.Internal synchronization This trigger is obtained from the time base generator tosynchronize the signal.External synchronization An external trigger source can also be used to synchronize the signal being measured. Auto Triggering Mode The time base used in this case in a self-oscillating condition, i.e., it gives an output even in the absence of any Y-input. The advantage of this mode is that the beam is visible on the screen under all conditions, including the zero input. When the input exceeds a certain magnitude then the internal free running oscillator locks on to the frequency.Precautions:1. The ammeter is connected using thick wires.

2. While reversing ammeter polarity, see to it that the capacitor is not discharged.

Observation:Sl.NoTimeVoltageCurrent

Unit(Sec)(Volts)(Amps)

Result:Thus we study about CRO & to measure p.f