Edc Lab Manual - Marimuthu

7/25/2019 Edc Lab Manual - Marimuthu

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SIDDHARTH INSTITUTE OF ENGINEERING &

TECHNOLOGY

(AUTONOMOUS)

NARAYANAVANAM ROAD, PUTTUR- 517 583

ELECTRONIC DEVICES & CIRCUITS

LABORATORY MANUAL

DEPARTMENT

OF

ELECTRONICS AND COMMUNICATION ENGINEERING

PREPARED BY VERIFIED

BY

M.MARIMUTHU M.JANARDHANA RAJU


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Assistant Professor Professor/Head of the Department

(15A04305) ELECTRONIC DEVICES AND CIRCUITS LABORATORY

PART A: Ele!"#$% "'#* P"+!%e

1. Identification, Specifications, Testing of R, L, C Components (Coor Codes!,

Potentiometers, Cois, "ang Condensers, Rea#s, $read $oards.

%. Identification, Specifications and Testing of acti&e de&ices, Diodes, $'Ts, ')Ts,

L)Ds, LCDs, SCR, *'T.

+. Sodering Practice Simpe circ-its -sing acti&e and passi&e components.

. St-d# and operation of Ammeters, otmeters, Transformers, Anaog and Digita

0-timeter, -nction "enerator, Reg-ated Poer S-pp# and CR2.

PART B: L%! #, E-*e"%e$!

(/#" L+#"+!#" E-+%$+!%#$2M%$% #, Te$ E-*e"%e$!)

1. P3 '-nction Diode Characteristics

Part A4 "ermani-m Diode (orard 5ias 6 Re&erse 5ias!

Part $4 Siicon Diode (orard 5ias on#!

%. 7ener Diode Characteristics

Part A4 I Characteristics

Part $4 7ener Diode act as a otage Reg-ator

+. Rectifiers (itho-t and ith cfiter!

Part A4 Hafa&e Rectifier

Part $4 -a&e Rectifier

. $'T Characteristics(C) Config-ration!Part A4 Inp-t Characteristics

Part $4 2-tp-t Characteristics

8. )T Characteristics(CS Config-ration!

Part A4 Drain (2-tp-t! Characteristics

Part $4 Transfer Characteristics

9. SCR Characteristics

:. *'T Characteristics

;. Transistor $iasing


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PART A: Ele!"#$% "'#* P"+!%e

1. Ie$!%,%+!%#$ S*e%,%+!%#$ Te!%$6 #, R L C C#*#$e$! (C#l#" C#e)

P#!e$!%#e!e" C#%l 7+$6 C#$e$e" Rel+ B"e+ B#+".

AIM:

To st-d# a5o-t identification, specification and testing of the R, L, and C components,

Potentiometers, Cois, "ang Condensers, Rea#s and $read $oards.

APPARATUS RE8UIRED:

S.32 C20P23)3TS >*A3TIT?

1 Resistor 1

% Capacitor 1

+ Ind-ctor 1

Potentiometer 1

8 Cois 1

9 "ang Condenser 1

: Rea# 1

; $read 5oard 1

THEORY:

1. RESISTOR

Resistor is an eectronic component hose f-nction is to imit the fo of c-rrent in an

eectric circ-it. It is meas-red in -nits caed ohms. The s#m5o for ohm is (omega!.

@itho-t resistors &otage o-d 5e too great for indi&id-a components to hande and o-d

res-t in o&eroading or destr-ction.

Ie$!%,%+!%#$:

Color codingis -sed in eectronics to identif# 5eteen different components. )ectronic

components ie resistors are &er# sma in siBe and it is diffic-t to print its &a-e direct# on

to the component s-rface. Hence a standard as formed in 1


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a. ied resistor5. &aria5e Resistor

c. Potentiometer

T#pica resistor attage siBes are 1/;, 1/, 1/%, 1, %, 8, 1= and %= (! -nits, depending on

thicness of eads @attage of resistors can 5e decided. The &ario-s t#pes of resistors are

car5on resistor, thin fim resistor, ire o-nd resistor and rheostat.
https://en.wikipedia.org/wiki/File:Resistor,_Rheostat_(variable_resistor),_and_Potentiometer_symbols.svg


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Te!%$6:

1. connect the meas-ring pro5es into the socet of the Digita 0-timeter

%. Sitch on the m-timeter and set the no5 in ohms position

+. 3o meas-re the resistance 5# pacing the testing pro5es on either side if the resistor.

. The &a-e of the resistance in ohms is noted and &erified -sing coor coding

8. If no &a-e is dispa#ed, see the resistor for an# 5-rnt shades or damages.

9. CAPACITOR

The C+*+%!#", sometimes referred to as a C#$e$e", is a simpe passi&e de&ice that is

-sed to store eectricit#. The capacitor is a component hich has the a5iit# or capacit# tostore energ# in the form of an eectrica charge prod-cing a potentia difference (Static

Voltage! across its pates, m-ch ie a sma rechargea5e 5atter#.

Ie$!%,%+!%#$:

Capacitors are identified -sing the &a-e ritten on the 5od#. There are some capacitors

hich are identified -sing coor codes. A capacitor is said to 5e F-# ChargedG hen the

&otage across its pates e-as the s-pp# &otage. The s#m5o for eectrica charge is >

and its -nit is the Co-om5.

S*e%,%+!%#$:

)ectro#tic capacitors are poariBed. The# ha&e a &e and a &e termina. Capacitance is

meas-red in /+"+, hich is a &er# arge -nit so %"#2/+"+(-!, N+$#2/+"+(n!

and P%#2/+"+(p! are genera# -sed. Capaciti&e reactance is the opposition to c-rrent

fo in AC circ-its. In AC capaciti&e circ-its the &otage FagsG the c-rrent 5#


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To specif# the &a-e of the ceramic capacitor e -se the code ta5e shon 5eo

Picofarad

(p!

3anofarad

(n!

0icrofarad

(-!Code

Picofarad

(p!

3anofarad

(n!

0icrofarad

(-!Code

1= =.=1 =.====1 1== :== .: =.==: :%

18 =.=18 =.====18 18= 8=== 8.= =.==8 8=%

%% =.=%% =.====%% %%= 89== 8.9 =.==89 89%

++ =.=++ =.====++ ++= 9;== 9.; =.==9; 9;%

: =.=: =.====: := 1==== 1= =.=1 1=+

1== =.1 =.===1 1=1 18=== 18 =.=18 18+

1%= =.1% =.===1% 1%1 %%=== %% =.=%% %%+

1+= =.1+ =.===1+ 1+1 ++=== ++ =.=++ +++18= =.18 =.===18 181 :=== : =.=: :+

1;= =.1; =.===1; 1;1 9;=== 9; =.=9; 9;+

%%= =.%% =.===%% %%1 1===== 1== =.1 1=

++= =.++ =.===++ ++1 18==== 18= =.18 18

:= =.: =.===: :1 %===== %== =.% %8

89= =.89 =.===89 891 %%==== %%= =.%% %%

9;= =.9; =.===9; 9;1 ++==== ++= =.++ ++

:8= =.:8 =.===:8 :81 :==== := =.: :

;%= =.;% =.===;% ;%1 9;==== 9;= =.9; 9;1=== 1.= =.==1 1=% 1====== 1=== 1.= 1=8

18== 1.8 =.==18 18% 18===== 18== 1.8 188

%=== %.= =.==% %=% %====== %=== %.= %=8

%%== %.% =.==%% %%% %%===== %%== %.% %%8

++== +.+ =.==++ ++% ++===== ++== +.+ ++8

Te!%$6:


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1 Checing this capacitor ith a capacitance meter is straight forard. 2n these

capacitors, the positi&e ead is mared. Attach the positi&e (red! ead from the meter to

that and the negati&e (5ac! to the opposite. This capacitor shos 1=+;J, cear#

ithin its toerance.

! In this eampe the capacitor i 5e charged ith a


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Unit of Inductance

@hich e deri&ed at e-ation, @here, L is non is the sefind-ction of the circ-it. In the

a5o&e e+!%#$ #, %$!+$e, if e 1 ot and (di / dt! is one ampere per second, then L 1

and its -nit is Henr#. That means, if a circ-it, prod-ces emf of 1 ot, d-e to the rate of

change of c-rrentthro-gh it, one ampere per second then the circ-it is said to ha&e one henr#

sefind-ctance. This henr# is $%! #, %$!+$e

P#!e$!%#e!e":

A *#!e$!%#e!e", informa# a *#!, is a threeterminaresistorith a siding or rotating

contact that forms an adM-sta5e&otage di&ider.N1OIf on# to terminas are -sed, one end and

the iper, it acts as a variable resistoror rheostat.

The meas-ring instr-ment caed apotentiometeris essentia# a &otage di&ider -sed for

meas-ring eectric potentia (&otage! the component is an impementation of the same

principe, hence its name.

Potentiometers are common# -sed to contro eectrica de&ices s-ch as &o-me contros on

a-dio e-ipment. Potentiometers operated 5# a mechanism can 5e -sed as position

transd-cers, for eampe, in aMo#stic. Potentiometers are rare# -sed to direct# controsignificant poer (more than a att!, since the poer dissipated in the potentiometer o-d

5e compara5e to the poer in the controed oad.

C#%l:
http://www.electrical4u.com/electric-current-and-theory-of-electricity/https://en.wikipedia.org/wiki/Terminal_(electronics)https://en.wikipedia.org/wiki/Resistorhttps://en.wikipedia.org/wiki/Voltage_dividerhttps://en.wikipedia.org/wiki/Potentiometer#cite_note-1https://en.wikipedia.org/wiki/Potentiometer_(measuring_instrument)https://en.wikipedia.org/wiki/Electric_potentialhttps://en.wikipedia.org/wiki/Transducerhttps://en.wikipedia.org/wiki/Joystickhttps://en.wikipedia.org/wiki/Watthttp://www.electrical4u.com/electric-current-and-theory-of-electricity/https://en.wikipedia.org/wiki/Terminal_(electronics)https://en.wikipedia.org/wiki/Resistorhttps://en.wikipedia.org/wiki/Voltage_dividerhttps://en.wikipedia.org/wiki/Potentiometer#cite_note-1https://en.wikipedia.org/wiki/Potentiometer_(measuring_instrument)https://en.wikipedia.org/wiki/Electric_potentialhttps://en.wikipedia.org/wiki/Transducerhttps://en.wikipedia.org/wiki/Joystickhttps://en.wikipedia.org/wiki/Watt


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An ele!"#+6$e!% #%lis an eectrica cond-ctors-ch as a irein the shape of a coi,spira

or hei. )ectromagnetic cois are -sed in eectrica engineering, in appications here

eectric c-rrentsinteract ith magnetic fieds, in de&ices s-ch as ind-ctors, eectromagnets,

transformers, and sensor cois. )ither an eectric c-rrent is passed thro-gh the ire of the coi

to generate a magnetic fied, or con&erse# an eterna time-varyingmagnetic fied thro-gh

the interior of the coi generates an )0(&otage! in the cond-ctor.

Cois can 5e cassified 5# the fre-enc# of the c-rrent the# are designed to operate ith4

Direct currentorDCcois or eectromagnets operate ith a stead#direct

c-rrentin their indings

Audio-frequencyorAFcois, ind-ctors or transformers operate ith

aternating c-rrentsin the a-dio fre-enc#range, ess than %= HB

Radio-frequencyorRFcois, ind-ctors or transformers operate ith

aternating c-rrents in the radio fre-enc#range, a5o&e %= HB

7+$6 C#$e$e":

A gang condenser is a a &aria5e capacitor.A &aria5e capacitor is constr-cted in s-ch manner

that its &a-e of capacitance can 5e &aried. A t#pica &aria5e capacitor (adM-sta5e capacitor!

is the rotorstator t#pe. It consists of to sets of meta pates arranged so that the rotor pates

mo&e 5eteen the stator pates. Air is the dieectric. As the position of the rotor is changed,

the capacitance &a-e is ieise changed. This t#pe of capacitor is -sed for t-ning most radio

recei&ers.
https://en.wikipedia.org/wiki/Electrical_conductivityhttps://en.wikipedia.org/wiki/Wirehttps://en.wiktionary.org/wiki/coilhttps://en.wikipedia.org/wiki/Spiralhttps://en.wikipedia.org/wiki/Helixhttps://en.wikipedia.org/wiki/Electrical_engineeringhttps://en.wikipedia.org/wiki/Electric_currenthttps://en.wikipedia.org/wiki/Magnetic_fieldhttps://en.wikipedia.org/wiki/Inductorhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Transformerhttps://en.wikipedia.org/wiki/Electromotive_forcehttps://en.wikipedia.org/wiki/Voltagehttps://en.wikipedia.org/wiki/Frequencyhttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Alternating_currenthttps://en.wikipedia.org/wiki/Audio_frequencyhttps://en.wikipedia.org/wiki/Radio_frequencyhttps://en.wikipedia.org/wiki/Electrical_conductivityhttps://en.wikipedia.org/wiki/Wirehttps://en.wiktionary.org/wiki/coilhttps://en.wikipedia.org/wiki/Spiralhttps://en.wikipedia.org/wiki/Helixhttps://en.wikipedia.org/wiki/Electrical_engineeringhttps://en.wikipedia.org/wiki/Electric_currenthttps://en.wikipedia.org/wiki/Magnetic_fieldhttps://en.wikipedia.org/wiki/Inductorhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Transformerhttps://en.wikipedia.org/wiki/Electromotive_forcehttps://en.wikipedia.org/wiki/Voltagehttps://en.wikipedia.org/wiki/Frequencyhttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Direct_currenthttps://en.wikipedia.org/wiki/Alternating_currenthttps://en.wikipedia.org/wiki/Audio_frequencyhttps://en.wikipedia.org/wiki/Radio_frequency


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Rel+:

A "el+is an eectrica#operated sitch. 0an# rea#s -se an eectromagnetto

mechanica# operate a sitch, 5-t other operating principes are aso -sed, s-ch as soidstate

rea#s. Rea#s are -sed here it is necessar# to contro a circ-it 5# a opoer signa (ith

compete eectrica isoation 5eteen contro and controed circ-its!, or here se&era

circ-its m-st 5e controed 5# one signa. The first rea#s ere -sed in ong distance teegraphcirc-its as ampifiers4 the# repeated the signa coming in from one circ-it and retransmitted

it on another circ-it. Rea#s ere -sed etensi&e# in teephone echanges and ear#

comp-ters to perform ogica operations.

B"e+ B#+":
https://en.wikipedia.org/wiki/Electrichttps://en.wikipedia.org/wiki/Switchhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Electrical_telegraphhttps://en.wikipedia.org/wiki/Electrichttps://en.wikipedia.org/wiki/Switchhttps://en.wikipedia.org/wiki/Electromagnethttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Solid-state_relayhttps://en.wikipedia.org/wiki/Electrical_telegraph


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A "e+#+"is a constr-ction 5ase forprotot#pingof eectronics. 2rigina# it as itera#

a 5read 5oard, a poished piece of ood -sed for sicing 5read. In the 1e"e %+)

P+"! B: S%l%#$ D%#e (/#"


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S.NO COMPONENTS RAN7E 8UANTITY

1 Diode 13==: 1

% Reg-ated Poer

s-pp#

(=+=&! 1

+ Resistor 1Q 1

Ammeters (=%== mA, =8==mA! 1 each8 otmeter (=%= ! 1

9 $read 5oard 1

: Connecting ires As re-ired

THEORY:

P3 M-nction diode cond-cts on# in one direction. The I characteristics of the diode

are c-r&e 5eteen &otage across the diode and c-rrent thro-gh the diode. @hen eterna

&otage is Bero, circ-it is open and the potentia 5arrier does not ao the c-rrent to fo.

Therefore, the circ-it c-rrent is Bero. @hen Pt#pe (Anode is connected to &e termina andn t#pe (cathode! is connected to &e termina of the s-pp# &otage, is non as forard

5ias.

The potentia 5arrier is red-ced hen diode is in the forard 5iased condition. At

some forard &otage, the potentia 5arrier atogether eiminated and c-rrent starts foing

thro-gh the diode and aso in the circ-it. The diode is said to 5e in 23 state. The c-rrent

increases ith increasing forard &otage.

PROCEDURE

/OR&ARD BIAS41. Connections are made as per the circ-it diagram.

%. In forard 5ias, the RPS &e is connected to the anode of the diode and RPS &e is

connected to the cathode of the diode,

+. Sitch on the poer s-pp# and increases the inp-t &otage (s-pp# &otage! in Steps.

. 3ote don the corresponding c-rrent foing thro-gh the diode and &otage across the

diode for each and e&er# step of the inp-t &otage.

8. The reading of &otage and c-rrent are ta5-ated.

9. "raph is potted 5eteen &otage and c-rrent.

CIRCUIT DIA7RAM

/OR&ARD BIAS:


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MODEL 7RAPH:

TABULATION AND OBSERVATIONS:


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/OR&ARD BIAS:

S.NO /OR&ARD

VOLTA7E

(V)

/OR&ARD

CURRENT

(A)

19

3

4

5

?

@

10

RESULT:

Th-s the st-d# of I characteristics of P3 M-nction diode is s-ccessf-# competed

C! %$ >#l!+6e

B"e+' D#


15/55

T# ! !e >#l!+6e2""e$! +"+!e"%!% #, 6e"+$% (/#"e"e

%+)

APPARATUS RE8UIRED:

S.NO COMPONENTS RAN7E 8UANTITY

1 Diode 13+A 1

% Reg-ated Poer

s-pp#

(=+=&! 1

+ Resistor 1Q 1

Ammeters (=%== mA, =8==A! 1 each

8 otmeter (=%= ! 1

9 $read 5oard 1

: Connecting ires As re-ired

THEORY:

P3 M-nction diode cond-cts on# in one direction. The I characteristics of the diode

are c-r&e 5eteen &otage across the diode and c-rrent thro-gh the diode. @hen eterna

&otage is Bero, circ-it is open and the potentia 5arrier does not ao the c-rrent to fo.

Therefore, the circ-it c-rrent is Bero. @hen Pt#pe (Anode is connected to &e termina and

n t#pe (cathode! is connected to &e termina of the s-pp# &otage, is non as forard

5ias.

The potentia 5arrier is red-ced hen diode is in the forard 5iased condition. At

some forard &otage, the potentia 5arrier atogether eiminated and c-rrent starts foing

thro-gh the diode and aso in the circ-it. The diode is said to 5e in 23 state. The c-rrent

increases ith increasing forard &otage.

@hen 3t#pe (cathode! is connected to &e termina and Pt#pe (Anode! is connected &e

termina of the s-pp# &otage is non as re&erse 5ias and the potentia 5arrier across the

M-nction increases. Therefore, the M-nction resistance 5ecomes &er# high and a &er# sma

c-rrent (re&erse sat-ration c-rrent! fos in the circ-it. The diode is said to 5e in 2 state.

The re&erse 5ias c-rrent d-e to minorit# charge carriers on#

PROCEDURE

/OR&ARD BIAS41. Connections are made as per the circ-it diagram.

%. In forard 5ias, the RPS &e is connected to the anode of the diode and RPS &e is

connected to the cathode of the diode,

+. Sitch on the poer s-pp# and increases the inp-t &otage (s-pp# &otage! in Steps.

. 3ote don the corresponding c-rrent foing thro-gh the diode and &otage across the

diode for each and e&er# step of the inp-t &otage.

8. The reading of &otage and c-rrent are ta5-ated.

9. "raph is potted 5eteen &otage and c-rrent.

CIRCUIT DIA7RAM


16/55

/OR&ARD BIAS:

REVERSE BIAS:

MODEL 7RAPH:

REVERSE BIAS41. Connections are made as per the circ-it diagram


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% .or re&erse 5ias, the RPS &e is connected to the cathode of the diode and RPS &e is

connected to the anode of the diode.

+. Sitch on the poer s-pp# and increase the inp-t &otage (s-pp# &otage! in Steps

. 3ote don the corresponding c-rrent foing thro-gh the diode &otage across the diode

for each and e&er# step of the inp-t &otage.

8. The readings of &otage and c-rrent are ta5-ated9. "raph is potted 5eteen &otage and c-rrent.


/OR&ARD BIAS: REVERSE BIAS:

S.NO /OR&ARD

VOLTA7E

(V)

/OR&ARD

CURRENT

(A)

19

3

4

5

?

@

10

RESULT:

Th-s the st-d# of I characteristics of P3 M-nction diode is s-ccessf-# competed

C! %$ >#l!+6e

B"e+' D#


18/55

! Fe$e" D%#e V2I C+"+!e"%!%

AIM:

T# ! !e >#l!+6e ; ""e$! +"+!e"%!% #, Fe$e" %#e("e>e"e %+ #$l)

COMPONENTS RE8UIRED:

S. N# A**+"+! R+$6e 8+$!%!

1 7ener Diode I79.% 1

% Resistance 1Qohm 1

+ Reg-ated Poer S-pp# (=+=! 1

Ammeter (=1==!mA 1

8 otmeter (=+=! 1

9 $read 5oard and connecting ires As re-ired

CIRCUIT DIA7RAM:

REVERSE BIAS:

SYMBOL:


19/55

MODEL 7RAPH:

THEORY:

The Fe$e" %#eis ie a generap-rpose signa diode consisting of a siicon P3

M-nction. @hen 5iased in the forard direction it 5eha&es M-st ie a norma signa diode

passing the rated c-rrent, 5-t as soon as a re&erse &otage appied across the 7ener Diode

eceeds the rated &otage of the de&ice, the diodes 5readon &otage is reached at hich

point a process caedAvalanche Breakdownocc-rs in the semicond-ctor depetion a#er and

a c-rrent starts to fo thro-gh the diode to imit this increase in &otage.

The c-rrent no foing thro-gh the Bener diode increases dramatica# to the maim-m

circ-it &a-e (hich is -s-a# imited 5# a series resistor! and once achie&ed this re&erse

sat-ration c-rrent remains fair# constant o&er a ide range of appied &otages. The &otagepoint at hich the &otage across the Bener diode 5ecomes sta5e is caed the FBener &otageG

for Bener diodes this &otage can range from ess than one &ot to h-ndreds of &ots.

The point at hich the Bener &otage triggers the c-rrent to fo thro-gh the diode can

5e &er# acc-rate# controed (to ess than 1E toerance! in the doping stage of the diodes

semicond-ctor constr-ction gi&ing the diode a specificzener reakdown voltage, ( B ! for

eampe, .+ or :.8. This Bener 5readon &otage on the I c-r&e is amost a &ertica

straight ine.

PROCEDURE:

REVERSE BIASED CONDITION:

1. Connect the 7ener diode in Re&erse 5ias i.e anode is connected to negati&e of the

poer s-pp# and cathode is connected to positi&e of the poer s-pp# as in circ-it.

%. or &ario-s &a-es of re&erse &otage (r! note don the corresponding &a-es of

re&erse c-rrent (Ir!.
http://amazon.in/s/?field-keywords=Zener+Diodes+and+Their+Applicationshttp://amazon.in/s/?field-keywords=Zener+Diodes+and+Their+Applications


20/55


REVERSE BIAS:

RESULT:

Th-s the st-d# of I characteristics of 7ener diode is s-ccessf-# competed

Fe$e" B"e+' D#


21/55

3 (+) . HAL/ &AVE RECTI/IER &ITH AND &ITH OUT /ILTER

AIM:

1. To pot 2-tp-t a&eform of the Haf @a&e Rectifier.

%. To find rippe factor for Haf @a&e Rectifier -sing the form-ae.


S.N# A**+"+! T*e R+$6e 8+$!%!

1 Diode I3==1 1

% Resistance := 1


CR2 1

8 Transformer 9=9 1

9 Capacitor : 1

: $read 5oard and connecting ires

CIRCUIT DIA7RAM:

Te#":

The operation of a haf a&e rectifier is prett# simpe. rom the theor# part, #o-sho-d no that a pn M-nction diode cond-cts c-rrent on# in 1 direction. In other ords, a

pn M-nction diode cond-cts c-rrent on# hen it is forard 5iased.

The same principe is made -se of in a haf a&e rectifier to con&ert AC to DC. The

inp-t e gi&e here is an aternating c-rrent. This inp-t &otage is stepped don -sing a

transformer. The red-ced &otage is fed to the diode UDK and oad resistance RL. D-ring the

positi&e haf c#ces of the inp-t a&e, the diode UDK i 5e forard 5iased and d-ring the

negati&e haf c#ces of inp-t a&e, the diode UDK i 5e re&erse 5iased.


22/55

M#el e,#":

&ITH /ILTER:

EGPERIMENT PROCEDURE:

1. Connections are gi&en as per the circ-it diagram.

%. App# AC main &otage to the primar# of the transformer. eed the rectified 2-tp-t

&otage to the CR2 and o5ser&e the @a&eform.

+. 3o connect the capacitor in parae ith oad resistor and note don the ampit-de

and time period of the a&eform.

. Pot the inp-t, o-tp-t a&eforms on a graph sheet.

8. Cac-ate the rippe factor.

T+l+" #l$:

S.N# R L V+ V

R%**le /+!#"

V+V

(


23/55

%. @h# rectifiers -sed ith a fiter at their o-tp-t.

+. @hat is rippe factor

. @hat is the &otage reg-ation of the rectifier.

8. @hat is the idea &a-e of reg-ation.

3(). /ULL &AVE RECTI/IER &ITH AND &ITH OUT /ILTER

AIM:

1. To pot 2-tp-t a&eform of the - @a&e Rectifier.

%. To find rippe factor for - @a&e Rectifier -sing the form-ae.


S. N# A**+"+! T*e R+$6e 8+$!%!

1 Diode I3==1 %

% Resistance := 1

+ Reg-ated Poer S-pp# (=+=! 1 CR2 1

8 Transformer 9=9 1

9 Capacitor : 1


CIRCUIT DIA7RAM:

OUTPUT &AVE/ORM &ITH /ILTER


24/55

Te#":

The f- a&e rectifier circ-it consists of to!ower diode"connected to a singe oad

resistance (RL! ith each diode taing it in t-rn to s-pp# c-rrent to the oad. @hen point Aof the transformer is positi&e ith respect to point C, diode D1 cond-cts in the forard

direction as indicated 5# the arros.

@hen point $ is positi&e (in the negati&e haf of the c#ce! ith respect to point C,

diode D%cond-cts in the forard direction and the c-rrent foing thro-gh resistor R is in the

same direction for 5oth hafc#ces. As the o-tp-t &otage across the resistor R is the phasor

s-m of the to a&eforms com5ined, this t#pe of f- a&e rectifier circ-it is aso non as a

F5iphaseG circ-it.

T+l+" #l$:

S.N# R L V+ V

R%**le /+!#"

V+V

(


25/55

+. 3o connect the capacitor in parae ith oad resistor and note don the ampit-de

and time period of the a&eform.

. Pot the inp-t, o-tp-t itho-t fiter and ith fiter a&eform on a graph sheet.

8. Cac-ate the rippe factor.

RESULT:

PRELAB 8UESTIONS:

1. @hat are the ad&antages and disad&antages of capacitor fiter.

%. @hat are the appications of rectifiers.

+. @hat is the reg-ation for a (i! Haf a&e circ-it (ii! -a&e circ-it

. @hat is PIV State it &a-e in case of (i! haf a&e (ii! - a&e (iii! $ridge rectifier.

8. @hat is the need for rectification.

4. INPUT AND OUTPUT CHARACTERISTICS O/ TRANSISTOR IN CECON/I7URATION

AIM:

To st-d# the inp-t and o-tp-t characteristics of a 5ipoar M-nction transistor in

C20023 )0ITT)R config-ration


S.N# A**+"+! T*e R+$6e 8+$!%!

1. Transistor $C1=: 1

%. Resistance 1Q 1

+. Reg-ated Poer S-pp# (=+=! 1

. Ammeter (=+=!mA,(=8=!A 1

8. otmeter (=+=! %

9. $read 5oard , connecting ires

CIRCUIT DIA7RAM:


26/55

INPUT CHARACTRISTICS: OUTPUT CHARACTRISTICS:


INPUT CHARACTERISTICS:

1. Connect the transistor in C) config-ration as per circ-it diagram

%. Qeep o-tp-t &otage C) at constant &otage 5# &ar#ing CC.

+. ar#ing $) grad-a#, note don 5oth 5ase c-rrent I$ and $).

. Repeat a5o&e proced-re (step +! for &ario-s &a-es of C)

OUTPUT CHARACTERISTICS:

1. 0ae the connections as per circ-it diagram.

%. $# &ar#ing $) eep the 5ase c-rrent I$constant.

+. ar#ing CC grad-a#, note don the readings of coectorc-rrent (IC! and

coector emitter &otage (C)!.

. Repeat a5o&e proced-re (step +! for different &a-es of I5

8. Pot the inp-t characteristics 5# taing $) on ?ais and I$ on Wais at

Constant C).

9. Pot the o-tp-t characteristics 5# taing C) on ais and IC on #ais 5#

taing I$ as a constant parameter.

RESULT:


27/55

PRE LAB 8UESTIONS:

1. @h# 3P3 transistors are prefera5e for ampification p-rpose than P3P transistors.

%. )pain the sitching action of a transistorV

+. At hat region of the o-tp-t characteristics, a transistor can act as an ampifierV

. @hat happens hen e change the 5iasing condition of the transistorsV

8. @h# the o-tp-t is phase shifted 5# 1;= X on# in C) config-ration.

5. /ET CHARACTERISTICS

AIM:

1. To st-d# Drain Characteristics of a )T.

! To st-d# Transfer Characteristics of a )T.


S.N# A**+"+! T*e R+$6e 8+$!%!

1. ')T Transistor $@1= 1

9. Resistance 1Q %

3. Ammeter =%= mA, =8== A 14. otmeter (=1!,(=+=! 1

5. $read 5oard 6 connecting @ires

?. Reg-ated Poer S-pp# (=+=! 1

CIRCUIT DIA7RAM:

MODEL 7RAPH:


28/55

TABULAR COLUMN:

DRAIN CHARACTERISTICS

V6 V6 V6

VDS (V) ID(A) VDS(V) ID(A) VDS(V) ID(A)

TRANS/ER CHARACTERISTICS

DS DS gs (! ID(mA! gs(! ID(mA!


29/55


DRAIN CHARACTERISTICS

1. Connect the circ-it as shon in the circ-it diagram.

%. Determine the drain characteristics of )T 5# eeping "S =&.

+. Pot its characteristics ith respect to DS &ers-s ID

TRANS/ER CHARACTERISTICS4

1. Determine the transfer characteristics of )T for constant &a-e of DS.

%. Pot its characteristics ith respect to "S &ers-s ID

+. Pot the drain characteristics 5# taing DS on Wais and ID on ?ais at constant

"S.

. Pot the Transfer characteristics 5# taing "S on Wais and ID on ?ais at constant

DS.

CALCULATIONS:

Trans cond-ctance (gm! YID/ YDS

Drain resistance (rd! YDS/ YID

RESULT:

PRELAB 8UESTIONS:


30/55

1. @h# )T is caed as a -nipoar transistorV

%. @hat are the ad&antages of )T o&er $'TV

+. State h# )T is &otage controed de&iceV

. @hat is the difference 5eteen 02S)T and )TV

8. @h# )T is 5etter than $'TV

?. SILICON2CONTROLLED RECTI/IER (SCR) CHARACTERISTICS

AIM: To dra the I Characteristics of SCR.


S.N# A**+"+! T*e R+$6e 8+$!%!

1. SCR T?3919 1

9. RPS (=+=! 1

3. R)SIST2RS 1=Q ,1Q 1,1

4. Ammeter (=8=mA! 1

5. otmeter (=1=! 1

?. 5read5oard 6 connecting ires

CIRCUIT DIA7RAM:

THEORY:


31/55

It is a fo-r a#er semicond-ctor de&ice 5eing aternate of Pt#pe and 3t#pe siicon. It

consists of + M-nctions '1, '%, '+ the '1 and '+ operate in forard direction and '% operates in

re&erse direction and three terminas caed anode A, cathode Q , and a gate ". The operation

of SCR can 5e st-died hen the gate is open and hen the gate is positi&e ith respect to

cathode. @hen gate is open, no &otage is appied at the gate d-e to re&erse 5ias of the

M-nction '% no c-rrent fos thro-gh R% and hence SCR is at c-t off. @hen anode &otage is

increased '% tends to 5readon. @hen the gate positi&e, ith respect to cathode '+ M-nction

is forard 5iased and '% is re&erse 5iased .)ectrons from 3t#pe materia mo&e across

M-nction '+ toards gate hie hoes from Pt#pe materia mo&es across M-nction '+ toards

cathode. So gate c-rrent starts foing, anode c-rrent increase is in etreme# sma c-rrent

M-nction '% 5rea don and SCR cond-cts hea&i#. @hen gate is open thee 5rea o&er

&otage is determined on the minim-m forard &otage at hich SCR cond-cts hea&i#. 3o

most of the s-pp# &otage appears across the oad resistance. The hoding c-rrent is the

maim-m anode c-rrent gate 5eing open, hen 5rea o&er occ-rs.

PROCEDURE:

1. Connections are made as per circ-it diagram.

%. Qeep the gate s-pp# &otage at some constant &a-e

+. ar# the anode to cathode s-pp# &otage and note don the readings of &otmeter and

ammeter. Qeep the gate &otage at standard &a-e.

. A graph is dran 5eteen AQand IAQ.

TABULAR COLUMN:

AQ(! IAQ(A!


32/55

Rel!:

V%>+ e!%#$:

1. @h# it is caed siicon controed rectifierV

%. Appications of SCRV

+. Ho can e sitch off SCRV

. Ho to sitch 2 an SCRV

8. @hat is meant 5# ThreshodV

@. UJT CHARACTERISTICS

AIM: To o5ser&e the characteristics of *'T and to cac-ate the Intrinsic Stand2ff Ratio (Z!.


S.N A**+"+! T*e R+$6e 8+$!%!

1. *'T %3%99 1

9. RPS (=+=! 1

3. R)SIST2RS 1==,1Q 1,1

4. Ammeter (=8=mA! 1

5. otmeter (=1=! 1

?. 5read5oard 6 connecting ires

CIRCUIT DIA7RAM:

THEORY:


33/55

A *niM-nction Transistor (*'T! is an eectronic semicond-ctor de&ice that has on# one

M-nction. The *'T *niM-nction Transistor (*'T! has three terminas an emitter ()! and to

5ases ($1 and $%!. The 5ase is formed 5# ight# doped nt#pe 5ar of siicon. To ohmic

contacts $1 and $% are attached at its ends. The emitter is of pt#pe and it is hea&i# doped.

The resistance 5eteen $1 and $%, hen the emitter is opencirc-it is caed inter5ase

resistance.The origina -niM-nction transistor, or *'T, is

a simpe de&ice that is essentia# a 5ar of 3 t#pe semicond-ctor materia into hich P t#pe

materia has 5een diff-sed somehere aong its ength. The %3%99 is the most common#

-sed &ersion of the *'T.

S#l #, UJT

The *'T is 5iased ith a positi&e &otage 5eteen the to 5ases. This ca-ses a potentia drop

aong the ength of the de&ice. @hen the emitter &otage is dri&en approimate# one diode

&otage a5o&e the &otage at the point here the P diff-sion (emitter! is, c-rrent i 5egin to

fo from the emitter into the 5ase region. $eca-se the 5ase region is &er# ight# doped, the

additiona c-rrent (act-a# charges in the

5ase region! ca-ses (cond-cti&it# mod-ation! hich red-ces the resistance of the portion of

the 5ase 5eteen the emitter M-nction and the $% termina. This red-ction in resistance means

that the emitter M-nction is more forard 5iased, and so e&en more c-rrent is inMected.

2&era, the effect is a negati&e resistance at the emitter termina. This is hat maes the *'T

-sef-, especia# in simpe osciator circ-its.@hen the emitter &otage reaches p, thec-rrent startsto increase and the emitter &otage starts

to decrease.This is represented 5# negati&e sope of the characteristics hich is reffered to as

the negati&e resistance region,5e#ond the &ae#point ,R$1 reaches minim-m &a-e and this

region,)$ propotiona to I).

PROCEDURE:

1. Connection is made as per circ-it diagram.

%. 2-tp-t &otage is fied at a constant e&e and 5# &ar#ing inp-t &otage corresponding

emitter c-rrent &a-es are noted don.


34/55

+. This proced-re is repeated for different &a-es of o-tp-t &otages.

. A the readings are ta5-ated and Intrinsic Stand2ff ratio is cac-ated -sing

Z (p$)! / $$

8. A graph is potted 5eteen )) and I) for different &a-es of $).

MODEL 7RAPH:

TABULAR COLUMN:

VBB1V VBB9V

VEB(V) IE(A) VEB(V) IE(A)


35/55

Rel!:

VIVA 8e!%#$:

1. hat is *'TV

%. @hat is the specia characteristics of *'TV

+. 3ame the terminas of the *'T.

. Dra the characteristics of *'T

8. @hat is meant 5# negati&e resistance regionV

. TRANSISTOR BIASIN7

AIM: 1. Design of ampifier -sing coector to 5ase 5ias

%. To 0eas-re the &otage gain of a C) ampifier

+. To dra the fre-enc# response c-r&e of the C) ampifier

APPARATUS:

S.N# A**+"+! T*e R+$6e 8+$!%!

1. $'T Transistor $C8: 1

9. Resistance1Q,1.% Q,1== Q,

1,1,1

3. Reg-ated Poer S-pp# (=+=! 1

4. -nction generator and

CR2(=8!0HB, (=%=!0HB

1,1

5. Capacitors 1= J / %8, 1== J / %8

?. $read 5oard

DESI7N:


36/55

Ass-me CC1%,IC8ma, [:8

RCis cac-ated 5# app#ing QL to coector to emitter

CC(ICI$!RCC)=

RC(CCC)!/(I$IC!1.1; Q\1.% Q

R$is cac-ated 5# app#ing QL to coector to 5ase

CC(ICI$!RC I$R$$)=

R$(CC(ICI$!RC$)!/ I$:


37/55

emitter c-rrent. The inp-t signa is appied to 5ase termina of the transistor and ampifier

o-tp-t is taen across coector termina. A &er# sma change in 5ase c-rrent prod-ces a

m-ch arger change in coector c-rrent. @hen ) hafc#ce is fed to the inp-t circ-it, it

opposes the forard 5ias of the circ-it hich ca-ses the coector c-rrent to decrease, it

decreases the &otage more ). Th-s hen inp-t c#ce &aries thro-gh a ) hafc#ce,

increases the forard 5ias of the circ-it, hich ca-ses the coector c-rrent to increases th-s

the o-tp-t signa is common emitter ampifier is in o-t of phase ith the inp-t signa.

PROCEDURE:

1. Connect the circ-it as shon in circ-it diagram

%. Set cc 1%& and adM-st ce to 9& to operate the transistor in acti&e region.

+. App# the inp-t of %=m peatopea and 1 QHB fre-enc# -sing -nction

"enerator

. 0eas-re the 2-tp-t otage o (pp! Ta5-ate the readings in the ta5-ar form.

8. or potting the fre-enc# response the inp-t &otage is ept Constant at %=m pea

topea and the fre-enc# is &aried from 1=HB to 10HB *sing f-nction generator

9. A the readings are ta5-ated and &otage gain in d$ is cac-ated 5# *sing The

epression A&%= og1= (=/i!

The 5and idth of the ampifier is cac-ated from the graph

*sing the epression,

$andidth, $@f%f1

@here f1 oer c-toff fre-enc# of C) ampifier, and

@here f% -pper c-toff fre-enc# of C) ampifier

TABULAR COLUMN:

S.N# /RE UENCY H INPUT OUTPUT 7AIN A> V# B 90l# AV


38/55

RESULT:

. CRO OPERATION AND ITS MEASUREMENTS

AIM: To o5ser&e sine a&e, s-are a&e and triang-ar a&eforms on the C.R.2. and to

meas-re ampit-de and fre-enc# of the a&eforms.

APPARATUS RE8UIRED:

CR2

-nction generator and pro5es

Te#":

An oscioscope is a test instr-ment hich aos -s to oo at the ]shape] of eectrica

signas 5# dispa#ing a graph of &otage against time on its screen. It is ie a &otmeter ith

the &a-a5e etra f-nction of shoing ho the &otage &aries ith time. A gratic-e ith a1cm grid ena5es -s to tae meas-rements of &otage and time from the screen. The graph,

-s-a# caed the trace, is dran 5# a 5eam of eectrons striing the phosphor Coating of the

screen maing it emits ight, -s-a# green or 5-e. This is simiar to the @a# a tee&ision

pict-re is prod-ced. 2scioscopes contain a &ac--m t-5e ith a cathode (negati&e eectrode!

at one end to emit eectrons and an anode (positi&e eectrode! to acceerate them so the#

mo&e rapid# don the t-5e to the screen. This arrangement is caed an eectron g-n. The

t-5e aso contains eectrodes to defect the eectron 5eam -p/don and eft/right. The

eectrons are caed cathode ra#s 5eca-se the# are emitted 5# the cathode and this gi&es the

oscioscope its f- name of cathode ra# oscioscope or CR2. A d-a trace oscioscope can

dispa# to traces on the screen, aoing -s to easi# compare the inp-t and o-tp-t of an

ampifier for eampe. It is e orth pa#ing the modest etra cost to ha&e this faciit#.


39/55

/%6: I$!e"$+l Bl#' #, CRO

Se!!%$6 * +$ #%ll##*e:

2scioscopes are compe instr-ments ith man# contros and the# re-ire some care to

set -p and -se s-ccessf-#. It is -ite eas# to ]ose] the trace off the screen if contros are

set rong#.

There is some &ariation in the arrangement and a5eing of the man# contros. So,

the fooing instr-ctions ma# 5e adapted for this instr-ment.

1. Sitch on the oscioscope to arm -p (it taes a min-te or to!.

%. Do not connect the inp-t ead at this stage.

+. Set the AC/"3D/DC sitch (5# the ? I3P*T! to DC.

. Set the S@P/W? sitch to S@P (seep!.8. Set Trigger Le&e to A*T2.

9. Set Trigger So-rce to I3T (interna, the # inp-t!.

:. Set the ? A0PLII)R to 8/cm (a moderate &a-e!.

;. Set the TI0)$AS) to 1=ms/cm (a moderate speed!.


40/55

A*l%!e is the maim-m &otage reached 5# the signa. It is meas-red in &ots.

Pe+' >#l!+6e is another name for ampit-de.

Pe+'2*e+' >#l!+6e is tice the pea &otage (ampit-de!. @hen reading an

oscioscope trace it is -s-a to meas-re peapea &otage.

T%e *e"%# is the time taen for the signa to compete one c#ce.

It is meas-red in seconds (s!, 5-t time periods tend to 5e short so miiseconds (ms!

and microseconds (Js! are often -sed. 1ms =.==1s and 1Js =.=====1s.

/"ee$ is the n-m5er of c#ces per second. It is meas-red in hertB (HB!, 5-t

fre-encies tend to 5e high so iohertB (HB! and megahertB (0HB! are often -sed.

1HB 1===HB and 10HB 1======HB.

otage4 &otage is shon on the &ertica #ais and the scae is determined 5# the ?Ampifier (ots/ di&! contro . -s-a# pea to pea &otage is meas-red 5eca-se it can 5e

read correct# e&en if the position of = is not non. The ampit-de is haf the pea to pea

&otage.

otage distance in cm ^ &ots/cm

Time period4 time is shon on the horiBonta ais and the scae is determined 5# the time

5ase (time/cm! contro. The time period is the time for one c#ce of the signa. The fre-enc#

is the n-m5er of c#ces per second, fre-enc# 1/time period.

Timedistance in cm ^ time / cm

P"#e"e:

1. Connect f-nction generator o-tp-t at the inp-t of C.R.2. at channe 1 or at channe %

%. Seect proper channe i.e. if signa is connected to channe 1 seect CH1 and if signa is

connected to channe % seect CH%

+. AdM-st Time /Di& no5 to get s-fficient time period dispacement of the a&e on the CR2

screen.

. @ith fine t-ning of time/Di& mae the a&eform stead# on screen as shon in fooing

fig

ig4 stead# a&eform8. *se triggering contros if a&eform is not sta5e


41/55

9. Qeep &ot/di& no5 s-ch that a&eform is &isi5e on the screen itho-t cipping

:. 0eas-re PP reading aong #ais. This reading m-tipied ith &ot/di& gi&es pea to pea

ampit-de of the ac i/p a&e.

;. 0eas-re horiBonta di&ision of one compete c#ce. This di&ision m-tipied 5# time/di&

gi&es time period of the i/p a&e.

*)STI23S4

1. @hat is meant 5# CR2V

%. @hat is the principe 5ehind CR2 operationV+. Ho 5eams are formed in CR2V


42/55

. @hat is caed defection in horiBonta and &ertica paneV

8. 3ame fe companies that man-fact-re CR2

10. /RE8UENCY RESPONSE O/ COMMON EMITTER AMPLI/IER

AIM:

To design the fre-enc# response of Common )mitter Ampifier and cac-ate the 5and

idth


S.N A**+"+! T*e R+$6e 8+$!%!

1. $'T Transistor $C1=: 1

9. Resistance1Q,+.+ Q,.: Q, :=

1,+,1,1,1

3. aria5e Resistance=1== Q


5. -nction generator and CR2

?. Capacitors 1= J / %8, 1== J / %8

@. $read 5oard

CIRCUIT DIA7RAM:


43/55

THEORY:

The C) ampifier pro&ides high gain 6 ide fre-enc# response. The emitter ead is

common to 5oth inp-t and o-tp-t circ-its and is gro-nded. The emitter 5ase circ-it is forard

5iased. The coector c-rrent is controed 5# the 5ase c-rrent rather than emitter c-rrent. The

inp-t signa is appied to 5ase termina of the transistor and ampifier o-tp-t is taen across

coector termina. A &er# sma change in 5ase c-rrent prod-ces a m-ch arger change in

coector c-rrent. re-enc# response of an ampifier is defined as the &ariation of gain ith

respecti&e fre-enc#.

The gain of the ampifier increases as the fre-enc# increases from Bero ti it

5ecomes maim-m at oer c-toff fre-enc# and remains constant ti higher c-toff

fre-enc# and then it fas again as the fre-enc# increases.At o fre-encies the reactance

of co-ping capacitor Cc is -ite high and hence &er# sma part of signa i pass thro-gh

from one stage to the net stage. At high fre-encies the reactance of inter eectrode

capacitance is &er# sma and 5eha&es as a short circ-it.

This increases the oading effect on net stage and ser&ice to red-ce the &otage gain

d-e to these reasons the &otage gain drops at high fre-encies. At mid fre-encies the effect

of co-ping capacitors is negigi5e and acts ie short circ-it, here as inter eectrode

capacitors acts ie open circ-it. So, the circ-it 5ecomes resisti&e at mid fre-encies and the

&otage gain remains constant d-ring this range.



44/55


%. Set cc 1=& and adM-st ce to 8& to operate the transistor in acti&e region.


"enerator



topea and the fre-enc# is &aried from 1==HB to 10HB *sing f-nction generator



:. A graph is dran 5# taing fre-enc# on ais and gain in d$ on #ais 2n Semiog

graph.

OBSERVATIONS:



45/55

RESULT:

PRELAB 8UESTIONS:

1. @hat are the ad&antages and disad&antages of singestage ampifiersV

%. @h# gain fas at H and LV

+. )pain the f-nction of emitter 5#pass capacitor, CeV

. Ho the 5and idth i effect as more n-m5er of stages are cascadedV

8. Define fre-enc# responseV

9. @hat is the phase difference 5eteen inp-t and o-tp-t a&eforms of a C)

ampifierV

:. @hat is )ar# effectV

11. /RE8UENCY RESPONSE O/ EMITTER /OLLO&ER

AIM:

To design the fre-enc# response of )mitter fooer Ampifier and cac-ate the 5and

idth


S.N# A**+"+! T*e R+$6e 8+$!%!

1. $'T Transistor $C1=: 1

9. Resistance1Q,+.+ Q,.: Q, :=

1,+,1,1,1

3. aria5e Resistance=1== Q


5. -nction generator and CR2

?. Capacitors 1= J / %8, 1== J / %8

@. $read 5oard

CIRCUIT DIA7RAM:


46/55

THEORY:

In commoncoector ampifier the inp-t is gi&en at the 5ase and the o-tp-t is taen at

the emitter. In this ampifier, there is no phase in&ersion 5eteen inp-t and o-tp-t. The inp-t

impedance of the CC ampifier is &er# high and o-tp-t impedance is o. The &otage gain is

ess than -nit#. Here the coector is at ac gro-nd and the capacitors -sed m-st ha&e a

negigi5e reactance at the fre-enc# of operation. This ampifier is -sed for impedance

matching and as a 5-ffer ampifier. This circ-it is aso non as emitter fooer. The mostcommon -se of the emitter fooer is as a circ-it, hich performs the f-nction of impedance

transformation o&er a ide range of fre-encies.



%. Set cc 1=& and adM-st ce to 8& to operate the transistor in acti&e region.


"enerator



topea and the fre-enc# is &aried from 1==HB to 10HB *sing f-nction generator



:. A graph is dran 5# taing fre-enc# on ais and gain in d$ on #ais 2n Semiog

graph.

;. The $andidth of the ampifier is cac-ated from the graph -sing the )pression,


47/55

0ode graph4

B+$ V# B 90l# AV


48/55

RESULT:

VIVA 8UESTIONS:

1. @hat is maim-m &otage gain of CC ampifier

9. @h# gain fas at o and high fre-enciesV

3. @hat is transition fre-enc#V

4. Ho +D$ is fo-nd in semiog graphV

5. @hat are the characteristics of emitter fooerV

19. /RE8UENCY RESPONSE O/ COMMON SOURCE /ET AMPLI/IER

AIM:

To design and get the fre-enc# response of common so-rce ampifier


S.N# A**+"+! T*e R+$6e 8+$!%!

1. )T Transistor %3+


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THEORY:

The )T is a t#pe of transistor common# -sed for ea signa ampification. The

de&ice can ampif# anaog or digita signas. It can aso sitch DC or f-nction as an

osciator. In the )T c-rrent fos aong a semicond-ctor path caed the channe. At one end

of the channe, there is an eectrode caed so-rce.

At the other end of the channe there is an eectrode caed the drain. re-enc#

response of an ampifier is defined as the &ariation of gain ith respecti&e fre-enc#. The

gain of the ampifier increases as the fre-enc# increases from Bero ti it 5ecomes maim-m

at oer c-toff fre-enc# and remains constant ti higher c-toff fre-enc# and then it fas

again as the fre-enc# increases.

At mid fre-encies the effect of co-ping capacitors is negigi5e and acts ie short

circ-it, hereas inter eectrode capacitors acts ie open circ-it. So, the circ-it 5ecomes

resisti&e at mid fre-encies and the &otage gain remains constant d-ring this range


1. Connections are made as per the circ-it diagram.

%. Set dd 1=& and adM-st the ds to 8&.

+. A signa of % QHB fre-enc# and %=m peatopea is appied at the inp-t of

ampifier.

. 2-tp-t is taen at drain and gain is cac-ated 5# -sing the epression, A&=/i

8. otage gain in d$ is cac-ated 5# -sing the epression, A&%=og 1=(=/i!

9. Pot A& &s. re-enc#, The $andidth of the ampifier is cac-ated.

OBSERVATIONS:



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RESULT:

PRELAB 8UESTIONS:

1. @hat is the difference 5eteen )T and $'TV

%. )T is -nipoar or 5ipoarV

+. Dra the s#m5o of )TV

. @hat are the appications of )TV

8. )T is &otage controed or c-rrent controedV

ADDITIONAL EGPERIMENTS

1. BRID7E RECTI/ER

AIM: To cac-ate the rippe factor of a 5ridge rectifier, ith and itho-t fiters.


S.N# A**+"+! T*e R+$6e 8+$!%!

1 Diode I3==1 1

% Resistance := 1


CR2 1

8 Transformer 9=9 1

9 Capacitor : 1


THEORY:

The 5ridge rectifier is aso a f-a&e rectifier in hich fo-r pn diodes are connectedin the form of a 5ridge fashion. The $ridge rectifier has high efficienc# hen compared to


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hafa&e rectifier. D-ring e&er# haf c#ce of the inp-t, on# to diodes i 5e cond-cting

hie other to diodes are in re&erse 5ias.

CIRCUIT DIA7RAM:

PROCEDURE:

1. Connections are made as per the circ-it diagram.%. Connect the ac main to the primar# side of the transformer and secondar# side to the 5ridge

rectifier.

+. 0eas-re the ac &otage at the inp-t of the rectifier -sing the m-ti meter.

. 0eas-re 5oth the ac and dc &otages at the o-tp-t of the $ridge rectifier.

8. ind the theoretica &a-e of dc &otage 5# -sing the form-a.

M#el e,#":


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T+l+" #l$:

S.N# R L V+ V

R%**le /+!#"

V+V

(


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9. INPUT AND OUTPUT CHARACTERISTICS O/ TRANSISTOR IN CB

CON/I7URATION

AIM: To dra the inp-t and o-tp-t characteristics and to determine the h#5rid parameters of

a gi&en transistor in C20023 $AS) config-ration.


S.N# A**+"+! T*e R+$6e 8+$!%!

1. Transistor $C1=: 1

%. Resistance 1Q 1

+. Reg-ated Poer S-pp# (=+=! 1

. Ammeter (=1==!mA %

8. otmeter (=1=! %

9. $read 5oard and connecting ires




%. or potting the inp-t characteristics, the o-tp-t &otage C$ is ept constant at =

and for different &a-es of )$ note don the &a-es of I).

+. Repeat the a5o&e step eeping C$ at %, .A the readings are ta5-ated.

. A graph is dran 5eteen )$ and I) for constant C$.



%. or potting the o-tp-t characteristics, the inp-t I) is ept constant at 1=m A and

for different &a-es of C$, note don the &a-es of IC.

+. Repeat the a5o&e step for the &a-es of I) at %= mA, = mA, and 9= mA, a the

readings are ta5-ated.

. A graph is dran 5eteen C$ and Ic for constant I)


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CIRCUIT DIA7RAM:

MODEL 7RAPH:




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RESULT:

PRE LAB 8UESTIONS:

1. @hat are the appications of C$ config-rationV

9. Dra different transistor s#m5os.

3. $'T is a c-rrent controed de&ice. '-stif#.

4. @hat happens hen e change the 5iasing condition of the transistorsV

5. In hich case C$ config-ration is -sing.

Edc Lab Manual - Marimuthu

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