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(Turn Over) BTS(C) — VI — 10 — 009 — I B. Tech Degree VI Semester Examination, April 2010 Time : 3 Hours CS/EC/EB/EI 605 CONTROL SYSTEMS ENGINEERING (2006 Scheme) Maximum Marks : 100 PART — A (Answer ALL questions) (8 x 5 = 40) I. (a) Find the inverse Laplace Transform of s + 4 5 (i) (ii) s(s-0(s 2 +4) s(s2 + 45+5) Distinguish between open loop systems and closed loop systems. Give one example for each. With the help of a neat diagram explain time domain specifications. State and explain Routh — Hurwitz stability criterion. Explain frequency domain specifications. ( I) State and explain Nyquist stability criterion. Explain the properties of root loci. Draw the circuit diagram of a phase-lead electrical network and derive the transfer function. PART — B (4 x 15 = 60) II. (a) State and explain Mason's Gain Formula. (5) (b) Write the differential equations describing the dynamics of the systems shown in the figure and find the transfer function X2 (5)/ F(s) . ( 10) I( I 0-150 Rn P02_ 1 /-6 Cl D OR III. (a) Explain force-voltage analogy. (5) (b) Reduce the block diagram shown in the figure and find C/R. (10)
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Cusat Ec 6th Sem Question Paper

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Cusat Ec 6th Sem Question Paper
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Page 1: Cusat Ec 6th Sem Question Paper

(Turn Over)

BTS(C) — VI — 10 — 009 — I

B. Tech Degree VI Semester Examination, April 2010

Time : 3 Hours

CS/EC/EB/EI 605 CONTROL SYSTEMS ENGINEERING(2006 Scheme)

Maximum Marks : 100PART — A

(Answer ALL questions)

(8 x 5 = 40)I. (a) Find the inverse Laplace Transform of

s + 4 5 (i) (ii)

s(s-0(s 2 +4) s(s2 + 45+5)Distinguish between open loop systems and closed loop systems. Give one example for each.With the help of a neat diagram explain time domain specifications.State and explain Routh — Hurwitz stability criterion.Explain frequency domain specifications.

(I) State and explain Nyquist stability criterion.Explain the properties of root loci.Draw the circuit diagram of a phase-lead electrical network and derive the transfer function.

PART — B(4 x 15 = 60)

II. (a) State and explain Mason's Gain Formula. (5)(b) Write the differential equations describing the dynamics of the systems shown in the

figure and find the transfer function X2 (5)/ F(s) . ( 10)

I( I 0-150 Rn P02_

1/-6

Cl D OR

III. (a) Explain force-voltage analogy. (5)(b) Reduce the block diagram shown in the figure and find C/R. (10)

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2

KGIV. The unity feed back system is characterized by an open loop T.F (s) = 4 +10).

Determine the gain K so that the system will have a damping ratio of 0.5 for thisvalue of K. Determine the peak overshoot and time for peak overshoot for unitstep input. (5)Derive the expression for unit step response of a second order under damped system. (10)

OR

V. Derive the expression for peak time. (5)Using Routh Hurwitz criterion for the unity feedback system with open loop transfer

KGFunction (s) —

s (s +1)(s +2)(s + 5)fmd the range of K for stabilityfmd the value of K for marginally stable.

(iii) Frequency of sustained oscillation when marginally stable. (10)

Sketch the bode plot of the unity feed back system whose open loop transfer function20

G find (15)is given by (s) = and the Gain margin and phase margin.s(s +2)(s +10)

ORDraw the Nyquist plot for the system whose open loop transfer function is given by

KG H(s) = (s) — . Determine the range of K for which closeds (s +2)(s +10)

loop system is stable. (15)

V Sketch the root locus for a unity feed back system with open loop transfer function isK

G (15)given by (s) —s(s2 + 8s +32)+32)

ORIX. The open loop transfer function of a unity feed back control system is given by

G (s) — s (1+ 0.2s)

Design a suitable compensator such that the system will have K =10 and phase

margin = 50°. (15)

***

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BTS (C) — VI — 10 — 005 — L

B. Tech Degree VI Semester Examination, April 2010EC 601 DIGITAL COMMUNICATION

(2006 Scheme)

Time : 3 Hours Maximum Marks : 100

PART - A(Answer ALL questions)

(8 x 5 = 40)

I. (a) What is linear prediction? Explain.Explain about detection of signals with unknown phase in noise.Compare different types of pulse modulation methods.What is a leasing? Explain the method to reduce it.Compare and contrast binary and quaternary modulation techniques.What is eye pattern? Explain the measurement of different parameters in eye pattern.Explain Shannon's theorem.

(h) Explain about entropy.

PART — B(4 x 15 = 60)

II. Explain in detail G — S procedure. (15)OR

What is MLE? Explain. (8)Explain the operation of matched filter receiver (7)

IV. (a) Explain channel noise and error probability in PCM. (8)(b) Explain about the construction of message process from its samples. (7)

ORV. State sampling theorem for low pass signals and explain how the sampling theorem

is used to reconstruct the message signal from the sampled version. (15)

Describe about Inter symbol interference. Also explain the methods to avoid it. (15)OR

With the help of necessary diagram, explain PSK. State its merits and demeritsover other systems. (15)

Describe about ARQ. Also explain in detail different types of ARQ. (15)OR

For a systematic linear block code, the three parity check digits Ca, C3 and C6 aregiven by C4 = di d2 d3

C5 = di ®d2C6 = d1 ED d3

Construct generator matrix.Construct code generated by other matrix.Determine error correcting probability.Prepare suitable decoding table.

(v) Decode the received words 1 0 1 1 0 0 and 0 0 0 I 1 0. (15)

•**

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Ire timer',(Poe AA. (10)

resistance of 1000k . agroc.a.

1-41"OtAi 2.0oK

JL

BTS(C) – VI – 10– 008 – N

B. Tech Degree VI Semester Examination, April 2010EC 604 ELECTRONIC MEASUREMENTS AND

INSTRUMENTATION(2006 Scheme)

Time: 3 Hours Maximum Marks : 100PART – A

(Answer ALL questions)(8 x 5 = 40)

I. a. Differentiate accuracy and precision, give examplesDifferentiate r order and 2nd order instruments, give examples.Differentiate Transducer and Sensor, give examplesExplain the principle of operation of a torque transducer.Draw and explain the block diagram of a conventional standard signal generator.

f. Give an application of spectrum analyser and explain.R.What are the different types of therm° couple? Compare their sensitivities.h. Explain the different types of multiplexing used in telemetry.

PART – B(4 x 15 = 60)

(a) A voltmeter having a sensitivity of 1000S2N reads 100V on its 150V scale.When connected across an unknown resistor in series with a milli-ammeter.

When the milli-ammeter reads SmA, calculateApparent resistance of unknown, calculateActual resistance of the unknown resistor

(iii) Error due to the loading effect of voltmeter. (10)(b) Write short note on linearity and hysterisis. (5)

ORIII (a) A 50V range voltmeter is connected across the terminals of A and B of the

following circuit. Find the readings of the voltmeter under open circuit andloaded conditions. Find the accuracy and loading error. The voltmeter has a

a(b) What are the different types of errors in an instrumentation system?

(5)

(a) Explain the principle of operation of a thermistor. Give the applications ofthermistor. (10)

(b) Explain the use of piezo electric materials and transducers. (5)OR

Explain the principle of operation of LVDT with neat diagram. What are theapplication? Give its advantages and disadvantages of LVDT. (15)

(a) Draw and explain the block diagram of a frequency selective wave analyser. (8)(b) Draw and explain the block diagram of a function generator. (7)

OR(a) Draw and explain block diagram X-Y recoder and its applications. (8)(b) What are the applications of a CRO?

(7)

VIII. (a) Explain the operation of a electromagnetic flow meter. What are its advantagesand disadvantages? (8)

(b) Explain the different types of instrumentation system. (7)OR

(a) Explain the principle of operation of a solid state pressure transducer. Give itsadvantages and disadvantages. (8)

b) Explain the role of signal conditioner in the field of instrumentation. (7)***

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BTS (C) - VI - 10 - 010 - D

B.Tech. Degree VI Semester Examination, April 2010

EC/El 606 EMBEDDED SYSTEMS(2006 Scheme)

Time: 3 Hours Maximum Marks: 100

PART - A(Answer al questions)

(8 x 5 = 40)

Explain the applications of embedded systems in consumer electronics.What are the requirements of embedded system.Explain the different processors used in embedded systems.Explain IrDA interface.

(e) What is the use of asynchronous serial port in PIC 16E873.(1) Explain the features of PIC 16E873.

What is the function of an assembler.Explain the steps to compile and execute RT Linux modules.

PART - B(4 x 15 = 60)

(a) Explain the applications of embedded system in telecommunication. (10)(b) Explain the application of embedded system in the field instrumentation. (5)

OR(a) What are the challenges and issues in embedded system software development. (10)(b) Explain the application of embedded system in wireless communication. (5)

(a) Explain the operating system kemal architecture. (10)(b) Write notes on UART. (5)

ORExplain different types of embedded operating systems. (15)

(a) Explain the interfacing of ADC and sensor with PIC 16F873. (10)(b) Explain the memory organization of PIC 16F873. (5)

ORExplain SPI and I2C modes of PIC 16F873. (15)

VIII

Briefly explain the development of embedded database application with an example. (15)OR

DC. Explain how message transfer is handled over a serial link in real time embedded system. (15)

***

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BTS (C) — VI — 10 — 006 — L

B. Tech Degree VI Semester Examination, April 2010

EC 602 MICROWAVE TECHNIQUES AND DEVICES(2006 Scheme)

Time: 3 Flours Maximum Marks: 100PART — A

(Answer ALL questions)(8 x 5 = 40)

I. (a) Explain the properties, application and advantages of microwaves.S.T. for a TE lo mode, a freq of 8 GHZ will pass through a waveguide ofdimension a = 1.5cm and b = lcm if a dielectric with E l = 4 is inserted inside the guide.Explain the Magic Tec Junction and give its application in detail.What are the High frequency limitations of conventional tubes.Discuss the difference between transferred electron devices and Avalanchetrasmit devices.Explain the term dominant and degenerate mode in TE and TM waves.Explain IMPATT diode operation with suitable waveforms.

(h) Explain PIN diode switches and phase shifter.

PART — B(4 x 15 = 60)

II. Explain the term cavity resonator. Derive the expression of fo and qualityfactor of cavity resonator in rectangular waveguide. (I5)

ORIII. Describe the construction and important features of 2 hole directional coupler.

Obtain the reduced 5 matrix for the directional coupler. (15)

Explain the operation of Reblex Klystron with the help of applegate diagram.Derive its bunching parameter. (15)

ORWhat is Gunn effect. Explain it using RWH Theory. (9)Explain the working of a Faraday rotation isolator with diagram. (6)

Explain the amplification process that takes place in TWT and give the significanceof slow wave structure employed. (15)

ORExplain the operation and I-V characteristics of tunnel diode with the help ofenergy band diagram. (15)

VIII. (a) Explain the different methods of measuring microwave power. (8)(b) Explain the working of magnetron in detail. (7)

ORIX. (a) Derive Manley-Rowe power relations for parametric amplifier. (9)

(b) Explain the methods of measuring VSWR. (6)

*4*

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BTS(C) — VI — 10 — 007 — L

B. Tech Degree VI Semester Examination, April 2010EC/EI 603 VLSI DESIGN

(2006 Scheme)Time : 3 Hours Maximum Marks : 100

PART — A(Answer ALL questions)

(8 x 5 = 40)I. (a) What are the fundamental considerations in IC processing?

Compare the performances of CMOS and GaAs technologies.Draw the circuit diagram of a NMOS inverter with depletion mode pull-up and explain itsoperation, indicating the various regions of operation.Draw the capacitive device model for the MOS transistor and identify the components.Design

a static CMOS circuitNMOS circuit to implement the following expression

Y = BCD + AEDiscuss any one method to drive large capacitive loads.Define sheet resistance. What is the resistance of polysilicon wire that is 4 p m wide and

500 pm long? Given the sheet resistance of polysilicon layer = 5 Q per square.

(h)

Briefly explain timing classification of digital systems.

PART — B(4 x 15 = 60)

II. (a) Discuss the steps involved in the silicon on insulator CMOS process with suitablediagrams and compare it with the bulk CMOS process. (8)

(b) Explain the various second order effects in MOS devices. (7)OR

(a) With the help of neat sketches, explain the p-well CMOS process. (8)(b) Explain ion implantation in IC fabrication with necessary diagrams. (7)

(a) What is the need of design rules? Give the Mead and Conway design rules for the silicon.Gate NMOS process. (9)

(b) Draw a static CMOS circuit for the expression Y = A(B + C) and draw the

corresponding stick diagram.

(6)OR

(a) Design a CO 4 — 1 multiplexer(ii) 2 — 1 multiplexer

using CMOS transmission gates and use it to implement the expression.

Y (A,B,C,D)=E m(3,4,5,6,7,10,12,13). (9)

(b) What is CMOS domino logic? Design a CMOS domino circuit to implement

Y =C(A+B). (6)

(a)

What is the significance of "delay unit, r " . Estimate the CMOS inverter delay interms of Rise time and fall time. (7)

(b)

What are the objectives of scaling of MOS circuits? Explain the various scalingmodels.

(8)OR

VII. (a) Give the switch logic implementation of a four-way multiplexer and explain its working. (6)(b) A two phase clocking is preferred in sequential circuit design, why? Implement a

dynamic shift register using NMOS and CMOS. (9)

'What is clock skew and jitter? Give the sources of skew and jitter. (8)Briefly explain the latch-based clocking and its features. (7)

ORWhen compared with the synchronous approach, self-timed circuits display someattractive properties.? Give these properties. (6)What is self-timed signaling? Explain the role of Muller C-element in self-timedsignaling. (9)

***

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