Atomisti c Simulation First Principles DFT Tight Binding Next Generation EM Solver Circuit Simulator Hopping integrals Quantum-classical circuit mapping Electric signals Task 6: Development of multi-scale EDA components for devices and integrated circuits (Chen , Wang, Guo, Chew, P. Chan, Lo, Wu, Jiang, Wong, M. Chan)
Task 6: Development of multi-scale EDA components for devices and integrated circuits ( Chen , Wang, Guo, Chew, P. Chan, Lo, Wu, Jiang, Wong, M. Chan). Next Generation EM Solver. Circuit Simulator. Tight Binding. First Principles DFT. Atomistic Simulation. Electric signals. - PowerPoint PPT Presentation
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Atomistic S
imulati
on
First Principles DFT
Tight Binding
Next Generation EM Solver
Circuit Simulator
Hopping integrals
Quantum-classicalcircuit mapping
Electric signals
Task 6: Development of multi-scale EDA components for devices and integrated circuits (Chen, Wang, Guo, Chew, P. Chan, Lo, Wu, Jiang, Wong, M. Chan)
1.Steady state• ω=0 & ω≠02. Time dependent
)(2
EdEGi
)(4)(2 rrV
Non-equilibrium Green’s function (NEGF) method
])Im()Im(Tr[)(
)()]()([2
Rar
L
RL
GGET
ETEfEfdEh
eI
Landauer Formula:
DFT & TB for Quantum Transport (Guo, Wang)
TDDFT for transient currents TDDFT for transient currents (Chen)(Chen)
Left electrode right electrode
system to solve
boundary condition
Poisson Equation with boundary condition via potentials at SL and SR
L R
Dissipation functional Q
(energy and particle exchange with the
electrodes)
Electromagnetics Solver(Chew, Jiang)
Circuit Simulator(Wu, Jiang, P. Chan, M. Chan)
PEEC, DPEC & etc.
Coupled EM-Semiconductor Simulation?N. Wong and Q. Chen
• Combine full-wave EM simulation and device simulation
• Advanced simulator must allow simultaneous simulation of on-silicon components (passives) and in-silicon components (actives)