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AN11524 NXQ1TXA6 Evaluation Board Rev. 1 — 17 February 2015 Application note Document information Info Content Keywords NXQ1TXA6, NWP2081, Wireless Charging, Qi, mobile devices, base station, magnetic coupled power transfer Abstract This document illustrates how to create a Qi A6 wireless power base station. It uses the NXQ1TXA6 charging controller and its evaluation board that can deliver up to 5 W effective output at the wireless mobile device side
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Page 1: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

AN11524NXQ1TXA6 Evaluation BoardRev. 1 — 17 February 2015 Application note

Document information

Info Content

Keywords NXQ1TXA6, NWP2081, Wireless Charging, Qi, mobile devices, base station, magnetic coupled power transfer

Abstract This document illustrates how to create a Qi A6 wireless power base station. It uses the NXQ1TXA6 charging controller and its evaluation board that can deliver up to 5 W effective output at the wireless mobile device side

Page 2: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

Revision history

Rev Date Description

v. 1.0 20150217 Initial version

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 2 of 54

Contact informationFor more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: [email protected]

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

1. Introduction

The ubiquity of mobile phones, increases the requirement of a convenient way to charge these devices while on the move. Especially the fast rising number of smart phones widely used and relied upon in daily life. Wireless charging is introduced into smart phones and tablets.

Wireless charging represents the future of public and private charging.

Qi (pronounced as "Chee") is a wireless charging standard developed by Wireless Power Consortium (www.wirelesspowerconsortium.com) for inductive power.

The Qi system (see Figure 1) comprises a base station or a transmitter (TX) pad and a mobile device or a compatible receiver (RX), such as a mobile phone. To use the system, the mobile device is placed on top of the base station pad which charges the device via electromagnetic induction.

The market demand for the convenience and safety of standard-compliant wireless power systems continues to grow rapidly.

NXP offers Qi-compliant base station reference designs to set you immediately on your way to a successful project. NXP supports several types of Qi base stations. This document describes the application of an A6 type base station using NXQ1TXA6 charging controller.

Fig 1. Wireless charging system as defined by Wireless Power Consortium

aaa-014485

BASE STATION

TRANSMITTER

COMMmessages

reflected load

power

CONTROL

SY

STE

M

POWER CONVERSION

demod

MOBILE DEVICE

RECEIVER

CONTROLCOMM

LOA

D

POWER PICK-UP

mod

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 3 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

2. Scope

This document discusses the design of a WPC Qi A6 type base station based on the NXP NXQ1TXA6 Evaluation Board. The NXQ1TXA6 Evaluation Board is Qi certified and it complies with EMI regulation - EN55022 and FCC part 18.

The document is intended to provide engineers with real life practical design applications and get them started on the right note immediately.

For all topics covered, hints are provided to ensure system-level best performance, excellent EMC and lowest application cost.

Near Field Communication (NFC) option for tap to power on to enable zero power standby and Bluetooth pairing is included. There are many other use cases and possibilities with NFC technology but they are not within the scope of this application note.

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 4 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

3. Getting started

3.1 Package contents

The evaluation kit contains the following items:

• NXP NXQ1TXA6 wireless charger evaluation board containing, see Figure 2:

– NXQ1TXA6 charger controller IC

– NWP2081 half-bridge level shift controller IC

– NX2020 MOSFETs

– NT3H1201 NTAG-I2C NFC forum tag

• AC 110 V/220 V – DC 12 V power supply containing:

– TEA1720B3T HV start-up fly-back controller for ultra-low no-load charger applications up to 12 W

A mobile device to receive the power is not included in the evaluation package. Refer to the WPC website for a list of certified Qi receivers to be used with the evaluation board. To demonstrate NFC tap to power on, ensure that the receivers support both Qi wireless charging and NFC technology.

Fig 2. Overview of the charging pad

aaa-015876

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 5 of 54

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3.2 Main features

The NXQ1TXA6 Evaluation Board demonstrates:

• A reference design with key components from NXP for wireless charging applications based on inductive power transfer standard Qi.

• Shows additional benefits resulting from integration of NFC with wireless charging. Enabling for example zero power standby with the “tap to power on” feature.

3.3 System efficiency

In Figure 3, the system efficiency of the evaluation board is shown using a standard off the shelf receiver.

System efficiency is measured as the ratio of output power of the receiver to the input power of the transmitter. Input power is averaged to take into account variation due to communication between receiver and transmitter.

The quality of the components used in both the transmitter and the receiver, determine the efficiency of the system.

3.4 Board overview

The evaluation board is shown in Figure 4. The left-hand side contains the charging area where the mobile device should be placed. The top right side has the electronics to drive the charging coil and communicate with the mobile device.

(1) outer coil 1

(2) center coil

(3) outer coil 2

Fig 3. System efficiency

output power (mW)0 5,0004,0002,000 3,0001,000

aaa-015880

40

20

60

80

η(%)

0

(1)(2)(3)

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 6 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

The function of the switch and push buttons as well as the meaning of the status LED is explained in the next subsections.

Fig 4. Switch, buttons and status LED location overview

aaa-015882

LED

stand-by powermode switch

12 V DCinput

FODbutton

resetbutton

charging area

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 7 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

3.5 Stand-by power mode switch

The switch on the top of the board is not a power on/off switch. The switch is for alternating between the “Normal” and the NFC “tap to power on” position as illustrated in Figure 5.

In the Normal mode, the charging pad periodically monitors the coil for the presence of a Qi receiver. It starts power transfer, once a Qi power receiver is detected.

In the NFC tap to power on mode, the charging pad electronics are disconnected from the 12 V supply. The presence of an NFC enabled phone, switches on the 12 V system supply, enabling zero power in standby mode.

Important:

The present generation of NFC phones only performs periodic NFC operations when the display of the phone is on and unlocked. It is only under this condition that the charging pad is woken-up to start power transfer.

3.6 Reset button

Pressing the reset button marked SW101 on the board performs a reset of the charging pad.

3.7 Foreign object detection button

By pressing the left-most button marked SW102 on the board, the charging pad enables or disables Foreign Object Detection (FOD). This feature should be removed for final products.

While charging, the green status LED indicates whether FOD is activated. When FOD is active, the green LED blinks with a rate of 1 Hz. When FOD is disabled, the green LED blinks with a rate of 3 Hz.

Fig 5. Standby-by power mode switch

aaa-015883

normal modeposition

NFC tap to power on position

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 8 of 54

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3.8 Status LED

An overview of the status signaled by the LEDs is given in the following table:

3.9 NFC functionality

The evaluation board provides a passive tag functionality with NT3H1201 NTAG-I2C. The NTAG-I2C is preprogrammed with a URL link to the NXP website. When most NFC phones are put on the charger pad while the screen is active, an automatic link to the NXP website is made.

Other content can be programmed into NTAG IC by using, for example, NXPs TagWriter.

Table 1. LED status indicator

LED status Description

Off If a 12 V DC supply is present, the pad is in the operation mode as defined by the mode switch

Green blinking 1 Hz Ongoing power transfer - charging mobile device, FOD enabled

Green blinking 3 Hz Ongoing power transfer - charging mobile device, FOD disabled

Green permanently On Mobile device charged

Red blinking No power transfer

Error detected: Foreign object, temperature or Receiver indicated error

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 9 of 54

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4. NXP product offering

The NXQ1TXA6 evaluation board was designed based on the NXP products listed in Table 2. The part numbers are hyperlinked to the NXP website to provide quick access to product information and data sheets.

Table 2. NXP components for wireless charger application

Type number Function Package Ordering information

Version Description 12NC

NXQ1TXA6/001 Wireless charger controller

SOT865 HVQFN: plastic thermal enhanced very thin quad flat package; no leads; 33 terminals; body 7 7 0.85 mm

9353 039 36551

NWP2081T Half-bridge level-shift controller IC

SOT96 plastic small outline package; 8 leads; body width 3.9 mm

9353 021 87518

NX3008NBKW 30 V, single N-channel Trench MOSFET

SOT323 plastic surface-mounted package; 3 leads 9340 656 35115

NX2020N2 30 V, single N-channel Trench MOSFET

SOT1220 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals

9340 682 45115

BAS21 High-voltage switching diodes

SOT23 plastic surface-mounted package; 3 leads 9335 020 40215

BAT54S Schottky barrier diodes SOT23 plastic surface-mounted package; 3 leads 9339 763 80215

TL431 Adjustable precision shunt regulator

SOT23 plastic surface-mounted package; 3 leads 9352 932 76215

Optional

NT3H1201 NTAG-I2C NFC forum type 2 Tag compliant IC with I2C interface

SOT902 plastic extremely thin quad flat package; no leads; 8 terminals

9353 028 43125

NX3008CBKS 30 V complementary N/P channel Trench MOSFET

SOT363 plastic surface-mounted package with increased, 6 leads

9340 682 44115

NX2020P1 30 V, single P-channel Trench MOSFET

SOT1220 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals

9340 656 39115

BAT54C Schottky barrier (double) diodes

SOT23 plastic surface-mounted package; 3 leads 9339 763 70215

TDA3663 LDO (or use DC-to-DC RT8295A)

SOT223 plastic surface-mounted package with increased heatsink; 4 leads

9352 629 68135

TEA1720B3T 12 W HV start-up fly back controller (SMPS)

SOT96 plastic surface-mounted package; 8 leads 9353 026 97118

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 10 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

5. System overview

The NXQ1TXA6 Evaluation Board is a WPC Qi A6 type base station, powered by a +12 V AC-to-DC adapter.

It works on the basic principle of inductively coupled power transfer. An alternating current generated from the half-bridge driver is passed through the base station coil. It creates a magnetic field which induces a voltage in the mobile device coil. The mobile device communicates information related to power management and control to the base station.

When the NFC tap to power on feature is enabled, the evaluation board consumes zero power in standby mode.

A block diagram of the NXQ1TXA6 evaluation board is depicted in Figure 6. Each subblock is described in Section 5.1 to Section 5.8.

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 11 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

The block diagram does not depict all semiconductor components used to build up the system. See the related application note for details.

The NXQ1TXA6/001 supports the A6 single-coil and 3-coil configurations.

Fig 6. NXQ1TXA6 evaluation board block diagram

aaa-014209

NFC TAG IF

NXQ1TXA6

UI CTRL

NXP component

Optional NXP components forNFC control and zero standby power

MONITOR

HALF-BRIDGECONTROL

CONTROLLER

DEMODULATOR ASK DETECTION

MODE SELECT

MODE SELECTAND

VOLTAGEREFERENCE

SE

L3

SE

L2

SE

L1

OP

T2

OP

T1

CL_MON

ASK

HALF-BRIDGEDRIVER

EN_HB1

EN_HB2

EN_HB3

PWM

3V3

Vout

VS

NS

ISN

S

NTC

NWP2081

EN

_NFC

3V3

3V3

RESET

LED1

LED2

DC/DC

NX3008NBKW

NX2020P1

NX2020N2

3 x BAS21

NX2020N2

HALF-BRIDGEDRIVER

NWP2081

NX2020N2

NX2020N2

HALF-BRIDGEDRIVER

NWP2081

NX2020N2

NX2020N2

RSense12 V

OPTIONAL

CURRENTMONITOR

NFCNT3H1201

AC/DCTEA1720

mains110 - 230 V ~

(TL431BFDT)

BU

ZZ

buzzer

l2C

NX3008CBKS

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 12 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

5.1 NXQ1TXA6 charging controller

The NXQ1TXA6 is a wireless charger controller for A6 type base stations. It offers WPC 1.1 Qi-compliant communication and safety functions including Foreign Object Detection (FOD), over-temperature protection and more. The controller supports ping mode during standby to detect potential mobile devices. It also works with the NXP NT3H1201 to enable tap to power on with an NFC enabled phone.

Settings are available via resistor networks for Foreign Object Detection (FOD) level, LED blinking and other options. Refer to NXQ1TXA6 data sheet for further information.

5.2 Half Bridge driver

There are 3 half-bridge driver stages in the NXQ1TXA6 Evaluation Board. Control signals EN_HB1, EN_HB2 and EN_HB3 enable the driver stages independently. At any one time, only one driver stage is enabled for either pinging to detect the presence of a mobile device or active charging. The half-bridge driver stage is designed to output about ~7 W power to ensure minimum 5 W output is received at the mobile device.

NXP NWP2081T half-bridge controller IC and NX2020N2 N-channel Trench MOSFETs are the two key semiconductor components. They drive the A6 type primary coil and series capacitance (LC tank circuit) at operating frequency between 115 kHz to 205 kHz.

Frequency and duty cycle is varied via Pulse-Width Modulated (PWM) signal from the NXQ1TXA6 charging controller

The NXQ1TXA6 Evaluation Board can be configured to support A6 type single coil base station by shorting R117 and R118 in Figure 7 to ground. In this configuration, only half-bridge driver for coil 1 is active. Resistors R117 and R118 are not populated for an A6 type 3-coil base station configuration.

5.3 Amplitude-Shift Keying (ASK) envelope demodulator

One-directional communication from the mobile device to the base station is achieved via back-scattered Amplitude-Shift Keying modulation as illustrated in Figure 1.

The mobile device modulates the magnetic field of the base station using either capacitive or resistive load, at a rate of 2 kbits/sec.

An envelope detector is used to demodulate the communication data. The demodulated output is sent to the NXQ1TXA6 charging controller for further processing.

High voltages up to 100 Vp-p can be observed at the input of the envelope detector.

5.4 +12 V universal mains adapter

The power supply design is based on NXP TEA1720 low cost Switched Mode Power Supply (SMPS) controller IC. It is optimized for fly back converter topology to provide high-efficiency over the entire load range with ultra-low power consumption in the no-load condition.

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 13 of 54

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5.5 Current measurement

The current flowing into the power stage is determined by measuring the voltage across a 22 m current sense resistor. The current measurement is needed for Foreign Object Detection (FOD). If FOD is not required, it can be disabled by configuring the resistor networks (refer to NXQ1TXA6 data sheet). The current measurement circuits can be removed. Connect the unused ISNS pin to ground, i.e. not left open. Note that FOD is required to pass Qi certification.

5.6 Bandgap reference voltage

NXQ1TXA6 wireless charging controller needs a band gap reference voltage (0.5 % tolerance) for critical processing. The TL431 shunt regulator is used in the NXQ1TXA6 Evaluation Board to provide this reference voltage.

5.7 DC-to-DC converter

A DC-to-DC buck converter steps the +12 V input down to +3.3 V, to supply the NXQ1TXA6 charging controller and other +3.3 V circuits.

A Richtek RT8295A DC-to-DC converter is used in the NXQ1TXA6 evaluation board. An option for a linear regulator TDA3663 is available on board. Take note however, that at operating currents of the NXQ1TXA6 evaluation board, the efficiency of the applied DC-to-DC converter is better than a linear regulator.

5.8 Near Field Communication (NFC) zero power in Standby mode

When using the optional feature "NFC tap to power on", the base station is designed for zero power consumption in standby mode. It uses an NT3H1201 NTAG-I2C NFC forum passive tag.

When this feature is enabled, there is no pinging to detect the presence of a mobile device on the charger pad. Instead, an NFC enabled mobile device, for example a phone, wakes up the base station via the NT3H1201. Power transfer takes place with a certified Qi mobile device.

To enable more functions such as Bluetooth pairing, smart advertisements, and connection handovers, the passive tag can be programmed with the NXP TagWriter application (see Section 3.9 “NFC functionality”).

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 14 of 54

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6. Schematics and Bill Of Materials

Customers should start directly from NXQ1TXA6 Evaluation Board as this board is optimized in terms of functional performance and EMI.

Deviations are possible, but they should be kept minimal, carefully weighed and associated potential risks considered. Where possible, customers are encouraged to send their schematics to NXP for review. Contact the nearest NXP application support team in your area for support in designing your wireless charging base station.

During schematic capture, indicate critical components clearly in the schematics so that they are not forgotten during procurement and production. For example, 68 nF C0G/NP0 capacitor, 100 k 1 % tolerance resistor and 100 V rated components.

Certain critical components and PCB layout details are crucial to the success of the project and deserve special attention. In the later part of the document, these details are elaborated. Refer to Section 7 “Critical components”and Section 8 “PCB layout guidelines” in the subsequent pages.

For development of prototype boards, it is best practice to include test points on key signal nodes. For production runs, these test points can be removed from the final PCB.

At the very minimum, create test point for the following signal nodes:

• Power supplies - +3.3 V and +12 V supply nodes

• Output of ASK demodulator - AM signal node

• Output of current sense amplifier - ISOUT signal node

• Pulse Width Modulation - PWM signal node

• The half-bridge driver stage enable - nEN_HB1, 2 and 3 signal node

• System and power grounds - GND, GNDI

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 15 of 54

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aaa-015885

EXPIO1

+3V3 TESTIO

TESTCLK

SW1

BUZ

R11210 kΩ

BUZ101PS1240P02CT3

Ω

+3V3

+3V3R10247 kΩ

R107n.c.

9

7

5

3

1

10

8

6

4

2

TEST101

R101

n.c.

2

3

4

5

6RTSn

RXD

TXD

VCC

TXD

RXD

CTSn

UART101

1GND

+3V3

R109RED

GRNR111

1 kΩ

470 Ω

LED101LSG T676

ONLY FOR DEBUG

All inform

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in this docum

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Rev. 1 —

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ruary 2015

16 o

f 54

Fig 7. NXQ1TXA6 charging controller schematic

2RESET

3SEL3

8PWR_ON

9LED_G

10SCL

11SDA

15EN_HB1

16LP_VSUP

17PWM_HIN

18TAG_FD

19n.c.

21ISENSE

22ASK

23CL_DET

24NTC1

25n.c.

26VSNS

30SEL1

31RXD

32TXD

7EN_NFC

12BUZZER

20OPT0

27OPT1

28LED_R

1SEL2

13EN_HB2

14EN_HB3

SW1

ASEL3

PWR_ON [6]

LED_G

SCL

SDALP_VSUPEN_HB1 [1, 2]

IS- [2, 3, 4]

PWM_HIN [1, 2, 3, 4]

TAG_FD [7]

TESTCLK

ISOUT

AM [1, 5]

AML [1, 5]

NTC

TESTIO

measure power supply

R103100 kΩ1%

R104100 kΩ1 %

R10633.2 kΩ1 %

R11323.2 kΩ1 %

R11433.2 kΩ1 %

R105100 kΩ1%

U102TL431BFDT

C10410 nF

R11691 kΩ1 %

R115510 k1 %

ASEL1

RXD

TXD

EN_NFC [7]

BUZOPT1

ASEL1

ASEL2

ASEL3

OPT2

LED_R

ASEL2

EN_HB2 [1, 3]

EN_HB3 [1, 4]

U101

NXQ1TXA6/001

JP101

C102220 nF

C101220 nF

XTALIN

XTALOUT

VSS

4

5

VDD1

+3V3

6VDD2

29

33

C103220 nF

R119180 Ω1%

short R107 to GNDfor 1 LED option

short R117, R118 to GNDfor A6 1-coil base station

configuration setting

R117n.c.

R118n.c.

C10510 nF

C10610 nF

3

2

4

6

8

10

1

3

5

7

9SCL

SDA

EXPIO1

LP_VSUP

TP101

ONLY FOR DEBUG

SW101 B3FS-1000

SV101

SW14

1

2

3SW102 B3FS-1000

ASEL34

1

2

LED_R

LED_G

TP102 TP103 TP104 TP105 TP106 G101

GNDAMLAMEN_HB3EN_HB2EN_HB1PWM_HIN

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C21168 nF

G 100 V

C21068 nF

G 100 V

C217100 nF

C21622 μF

C214n.c.

C213n.c.

C1_2

GNDI GNDI GNDI GNDI

OUT

T+3 isth.

ISOUT[1]

TP203

5R202

2.2 kΩC21510 nF

3

4

OUT

T

U203*V+

IN+

IN-

6

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

17 o

f 54

Fig 8. Half bridge driver stage of coil 1 and current sense schematic

CO

CO

[5]U

COIL1CCOIL1T

CL1CCL1T1

2

3

4

GL

NWP2081

R205

R206

1 Ω

1 Ω

G201 G202

C207220 nF

SH

GH

FS

VDD

GND

SD

CLK

8

7

6

5

C203100 nF

C20110 nF

R20110 kΩ

C20622 μF1210

C218n.c.

GNDI

GNDI GNDI

GNDI

GNDI

GNDI GND

GNDI

GND

C205100 nF

T201NX3008NBKW

R203330 kΩ

[1, 3, 4]PWM_HIN

+12 V

[1]EN_HB1

GNDIGNDl

3

4

1

6

MAX44284HAU*only U202 or U20

mounted. Not bo

U202*

C202100 nF

R2040E022

1 %

RS+

RS-

VDD

SHDN

GND

C221100 nF

R210

U201

+3V3

n.c.

R207

Kelvin contacts

R208

10 Ω

10 Ω

NTC201

measuretemperature

LP_VSUP

NTC[1]

1

2

2

5

1

INA214AIDCK

REF

GND2

L1-1

C208n.c.

C209n.c.

R20922 kΩG

G

D

S

D

S

T203NX2020N2

T204NX2020N2

NODEBRIDGE

JP603

[1, 3, 4]IS-

Page 18: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

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aaa-015889

C30868 nF

G 100 V

C30768 nF

COG 100 VC312100 nF

C31122 μF

C3105.6 nFCOG 100 V

C3095.6 nFCOG 100 V

C2_2

1GL

R304

1 Ω

G301 G302

VDD8C303

GNDI GNDI GNDI GNDI

GNDI

+12 VU301

C305G

DT302NX2020N2

[1, 2, 4] IS-

C40868 nF

G 100 V

C40768 nF

G 100 VC412100 nF

C41122 μF

C410n.c.

C409n.c.

C3_2

G401 G402

GNDI GNDI GNDI GNDI

GNDI

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

18 o

f 54

Fig 9. Half bridge driver stage of coil 2 and 3

CO

[5] U

COIL2CCOIL2T

CL2CCL2T

2

3

4

NWP2081

R303

1 Ω

C304220 nF

SH

GH

FS

GND

SD

CLK

7

6

5

100 nF

GNDI GNDI

GNDI

GNDI

C302100 nF

T301NX3008NBKW

R302330 kΩ

[1, 2, 4] PWM_HIN

[1] EN_HB2

GNDIGNDl

L1-2

n.c.

C306n.c.

R30522 kΩG

S

D

ST303NX2020N2

JP605

CO

CO

[5] U

COIL3CCOIL3T

CL3CCL3T1

2

3

4

GL

NWP2081

R403

R404

1 Ω

1 Ω

C404220 nF

SH

GH

FS

VDD

GND

SD

CLK

8

7

6

5

C403100 nF

GNDI GNDI

GNDI

GNDI

C402100 nF

T401NX3008NBKW

R402330 kΩ

[1, 2, 3] PWM_HIN

+12 V

[1] EN_HB3

U401

L1-3

C405n.c.

C406n.c.

R40522 kΩG

G

D

S

D

S

T402NX2020N2

T403NX2020N2

[1, 2, 3] IS-

Page 19: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

Fig 10. Amplitude Shift Keying (ASK) envelope detector schematic

aaa-015890

UC1_2[2]

AML[1]

AM[1]

+ 3V3

REMARK: MAX. VOLTAGE 100 V

UC2_2[3]

UC3_2[4]

D501BAS21

R501470 Ω100 V

C50210 nF100 V

C504220 nF

C503470 pF

C5011 nF100 V

R502100 kΩ

100 V1 %

R5071 MΩ

R5061 MΩ

R50510 kΩ100 V

D501BAS21 D506

BAT545

D501BAS21

R5034.7 kΩ

1 %

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 19 of 54

Page 20: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

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aaa-015891

BOOT TP601 +3V3

SW

FB

COMP

1

3

5

6

L602NR4012T100M

R60724 kΩ

1 %

R60875 kΩ

1 %

R6066.8 kΩ

C6083.3 nF

C60922 μF

C610100 nF

DC)

VOUT

C607100 nF

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

20 o

f 54 Fig 11. DC supply schematic

+12V

VIN2

7

8

4

9

EN

SS

GND

GNDPAD

1 2

1 2

J601

C60110 μF

SJ601

SJ602

3

4

2

1

C60210 μF

C603100 nF

L601WE_744273222

JP602

TAG_VOUT [7]

D

S

PWR_ON [1]

D601BAT54C

JP601

R602

220 kΩR60347 kΩ

R601220 kΩ

C611100 nF

T602NX2020P1

R604

22 Ω

100 kΩ

T601NX3008NBKW

SW601SLIDE-SPDT

C6044.7 μF

3 1

2

C605100 nF

C606100 nF

R605

OPTION FOR LDO(ALTERNATIVE FOR DC/

TDA3663

U602

1

2 4

3

GND

GND

GND

VIN

U601

RT8295A

Page 21: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

6.2 Bill Of Materials

The NXQ1TXA6 Evaluation Board is assembled with maximum options for evaluation purposes. For final design, certain components can be removed depending on the required features. The available options and corresponding components are presented below.

Options:

• Buzzer - only when buzzer is needed

• DCDC - when a DC-to-DC converter for 3.3 V is preferred

• LDO - when LDO regulator for 3.3 V is preferred

• NFC - when NFC is needed

• ZERO - when zero power standby is needed (also requires NFC)

• FOD - when FOD is required

• Debug - only for debugging, not for production

• NTC - only when NTC is needed

• NC - not connected, do not place

Fig 12. NFC schematic

aaa-015892

C7011 nF

R701220 kΩ

C702220 nF

R70210 kΩ

R70310 kΩ

R70410 kΩ

C703100 nF

C70439 pF

C705

C706

1 nF NPO

1 nF NPO

T701NX3008CBKS

[1]EN_NFC

[1]TAG_FD

[1]SCL

[1]SDA

[6]TAG_VOUT

+3V3

S2

D2 D1

S1

G1

G2

LP_VSUP

VCC

NFC interfaceoptional: NFC (also used for tap to power on)

VOUT LA

LB

SDA

SCL

FD

VSS

6

7

5

1

8

3

4

2

U701

NFC1

321

NFC2

321

NT3H1201

AN11524 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Application note Rev. 1 — 17 February 2015 21 of 54

Page 22: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

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Table 3. Bill Of Materials (BOM)

Part Value Part number Manufacturer Package Optional Description

BUZ101 PS1240P02CT3 PS1240P02CT3 TDK PS12 Buzzer audio indicator; round 12.2 mm 3.5 mm 4 kHz Vin = 3 V

capacitor, ceramic, 25 V, X7R, 20 %

capacitor, ceramic, 25 V, X7R, 20 %

capacitor, ceramic, 25 V, X7R, 20 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, Polarized, Case_D, 25 V

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 100 V, C0G, 5 %

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

22 o

f 54

C101 220 nF Standard - C0603 -

C102 220 nF Standard - C0603 -

C103 220 nF Standard - C0603 -

C104 10 nF Standard - C0603 -

C105 10 nF Standard - C0603 -

C106 10 nF Standard - C0603 -

C201 10 nF Standard - C0603 -

C202 100 nF Standard - C0603 FOD

C203 100 nF Standard - C0603 -

C205 100 nF Standard - C0603 -

C206 22F/1210 GRM32ER71E226KE15L MURATA C1210 -

C207 200 nF Standard - C0603 -

C208 n.c. Standard - C0603 n.c.

C209 n.c. Standard - C0603 n.c.

C210 68 nF/C0G/1812 C4532C0G2A683J250KA TDK C1812 -

C211 68 nF/C0G/1812 C4532C0G2A683J250KA TDK C1812 -

C212 100 nF Standard - C0603 FOD

C213 NC/100 V/C0G Standard - C1206 n.c.

C214 NC/100 V/C0G Standard - C1206 n.c.

C215 10 nF Standard - C0603 FOD

C216 22 F/1210 GRM32ER71E226KE15L MURATA C1210 -

C217 100 nF Standard - C0603 -

C218 NC/25V/Case_D Standard - SMC_D n.c.

C302 100 nF Standard - C0603 -

C303 100 nF Standard - C0603 -

C304 220 nF Standard - C0603 -

C305 n.c. Standard - C0603 n.c.

C306 n.c. Standard - C0603 n.c.

C307 68 nF/C0G/1812 C4532C0G2A683J250KA TDK C1812 -

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C308 68 nF/C0G/1812 C4532C0G2A683J250KA TDK C1812 - capacitor, ceramic, 100 V, C0G, 5 %

C309 5.6 nF/C0G/1206 GCM3195C2A562JA16D MURATA C1206 - capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 100 V, C0G, 5 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 100 V, X7R, 10 %

capacitor, ceramic, 100 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 25 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 6.3 V, X5R, 20 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

Table 3. Bill Of Materials (BOM) …continued

Part Value Part number Manufacturer Package Optional Description

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

23 o

f 54

C310 5.6 nF/C0G/1206 GCM3195C2A562JA16D MURATA C1206 -

C311 22 F/1210 GRM32ER71E226KE15L MURATA C1210 -

C312 100 nF Standard - C0603 -

C402 100 nF Standard - C0603 -

C403 100 nF Standard - C0603 -

C404 220 nF Standard - C0603 -

C405 n.c. Standard - C0603 n.c.

C406 n.c. Standard - C0603 n.c.

C407 68 nF/C0G/1812 C4532C0G2A683J250KA TDK C1812 -

C408 68 nF/C0G/1812 C4532C0G2A683J250KA TDK C1812 -

C409 NC/100V/C0G Standard - C1206 n.c.

C410 NC/100V/C0G Standard - C1206 n.c.

C411 22 F/1210 GRM32ER71E226KE15L MURATA C1210 -

C412 100 nF Standard - C0603 -

C501 1 nF/1206 Standard - C1206 -

C502 10 nF/1206 Standard - C1206 -

C503 470 pF Standard - C0603 -

C504 220 nF Standard - C0603 -

C601 10 F/1206 Standard - C1206 -

C602 10 F/1206 Standard - C1206 -

C603 100 nF Standard - C0603 -

C604 4.7 F/0805 GRM21BR71E475KA73L MURATA C0805 -

C605 100 nF Standard - C0603 -

C606 100 nF Standard - C0603 DCDC

C607 100 nF Standard - C0603 DCDC

C608 3.3 nF Standard - C0603 DCDC

C609 22 F/0805 GRM21BR60J226ME39L MURATA C0805 -

C610 100 nF Standard - C0603 -

C611 100 nF Standard - C0603 ZERO

Page 24: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

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C701 1 nF Standard - C0603 NFC capacitor, ceramic, 50 V, X7R, 10 %

C702 220 nF Standard - C0603 NFC capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, X7R, 10 %

capacitor, ceramic, 50 V, NP0, 5 %

capacitor, ceramic, 50 V, NP0, 5 %

capacitor, ceramic, 50 V, NP0, 5 %

High-voltage switching diode

High-voltage switching diode

High-voltage switching diode

Schottky barrier double diodes

Schottky barrier double diodes

DC10A - Socket PCB, DC Power, 2.49 mm

header, pin, 2.54 mm, 2 way 1 row

header, pin, 2.54 mm, 2 way 1 row

header, pin, 2.54 mm, 2 way 1 row

Line filter, CMODE, 30 H, 2.2 k 25 %

Inductor, shielded 10 H, 740 mA, SMD

Coil Module - TX (A6) 12.5 H/11.5 H

Standard LEDs - SMD Red/Green

NFC-Antenna

thermistor, NTC, Radial leaded

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 5 %

Table 3. Bill Of Materials (BOM) …continued

Part Value Part number Manufacturer Package Optional Description

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

24 o

f 54

C703 100 nF Standard - C0603 NFC

C704 39 pF/NP0 Standard - C0603 NFC

C705 1nF/NP0 Standard - C0603 NFC

C706 1nF/NP0 Standard - C0603 NFC

D501 BAS21 BAS21 NXP Semiconductors SOT23 -

D502 BAS21 BAS21 NXP Semiconductors SOT23 -

D503 BAS21 BAS21 NXP Semiconductors SOT23 -

D506 BAT54S BAT54S NXP Semiconductors SOT23 -

D601 BAT54C BAT54C NXP Semiconductors SOT23 ZERO

J601 DC10A DC10A CLIFF Electronic DC10 -

Components

JP101 JP1E Standard - JP1 Debug

JP601 JP1E Standard - JP1 Debug

JP602 JP1E Standard - JP1 Debug

L601 30 H, 2.2 k 744273222 Würth Elektronik WE-SL5_HC -

L602 NR4012T100M NR4012T100M TAIYO YUDEN NR4012 DCDC

L1 Y31-60037F Y31-60037F Elec & Eltek Magnetic

Y31-60037F -

LED101 LSG T676 LSG T676-P7Q7-1+N7P7-24 OSRAM PLCC-4 -

NFC1 NFC-Antenna NFC-Antenna - NFC NFC

NTC201 B57551G1103F005 B57551G1103F005 EPCOS - NTC

R101 n.c. Standard - R0603 n.c.

R102 47 k Standard - R0603 -

R103 100 k /1 % Standard - R0603 -

R104 100 k /1 % Standard - R0603 -

R105 100 k /1 % Standard - R0603 -

R106 33.2 k /1 % Standard - R0603 -

R107 n.c. Standard - R0603 n.c.

Page 25: AN11524 NXQ1TXA6 Evaluation Board - nxp.com This document ... The ubiquity of mobile phones, ... Wireless charging is introduced into smart phones and tablets. Wireless charging represents

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R109 1 k Standard - R0603 - chip resistor, 0.1 W, 5 %

R111 470 R Standard - R0603 - chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.25 W, 5 %

chip resistor, 0.25 W, 1 %

chip resistor, 0.1 W, 1 %

Table 3. Bill Of Materials (BOM) …continued

Part Value Part number Manufacturer Package Optional Description

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

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iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

25 o

f 54

R112 10 k Standard - R0603 Buzzer

R113 23.2 k /1 % Standard - R0603 -

R114 33.2 k /1 % Standard - R0603 -

R115 510 k /1 % Standard - R0603 -

R116 91 k /1 % Standard - R0603 -

R117 n.c. Standard - R0603 n.c.

R118 n.c. Standard - R0603 n.c.

R119 180 R / 1 % Standard - R0603 -

R201 10 k Standard - R0603 -

R202 2.2 k Standard - R0603 FOD

R203 330 k Standard - R0603 -

R204 0E022/1 % WSLP0805R0220FEA VISHAY R0805 FOD

R205 1 R Standard - R0603 -

R206 1 R Standard - R0603 -

R207 10 R Standard - R0603 FOD

R208 10 R Standard - R0603 FOD

R209 22 k RES0603 - R0603 -

R210 n.c. Standard - R0603 n.c.

R302 330 k Standard R0603 -

R303 1 R Standard R0603 -

R304 1 R Standard R0603 -

R305 22 k Standard R0603 -

R402 330 k Standard R0603 -

R403 1 R Standard R0603 -

R404 1 R Standard R0603 -

R405 22 k Standard R0603 -

R501 470R/100 V Standard R1206 -

R502 100 k/100 V/1 % Standard R1206 -

R503 4.7 k/1 % Standard R0603 -

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plicatio

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P S

emico

nd

ucto

rsA

N11524

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TX

A6

Ev

alu

ation

Bo

ard

R505 10 k/100 V Standard R1206 - chip resistor, 0.25 W, 5 %

R506 1M0 Standard R0603 - chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.125 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 1 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

chip resistor, 0.1 W, 5 %

header, pin, 2.54 mm, 10 way, 2 row

B3FS-1000 - switch, flat, SPNO

B3FS-1000 - switch, flat, SPNO

OS102011MA1QN1 - switch, SPDT, 0.1 A, 12 V, PCB, R/A

30 V, 350 mA N-channel Trench MOSFET

30 V N-channel Trench MOSFET

30 V N-channel Trench MOSFET

30 V, 350 mA N-channel Trench MOSFET

30 V N-channel Trench MOSFET

30 V N-channel Trench MOSFET

30 V, 350 mA N-channel Trench MOSFET

Table 3. Bill Of Materials (BOM) …continued

Part Value Part number Manufacturer Package Optional Description

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

26 o

f 54

R507 1M0 Standard R0603 -

R601 220 k Standard R0603 ZERO

R602 220 k Standard R0603 ZERO

R603 47 k Standard R0603 ZERO

R604 22 R Standard R0805 -

R605 100 k Standard R0603 DCDC

R606 6.8 k Standard R0603 DCDC

R607 24 k /1 % Standard - R0603 DCDC

R608 75 k /1 % Standard - R0603 DCDC

R701 220 k Standard - R0603 NFC

R702 10 k Standard - R0603 NFC

R703 10 k Standard - R0603 NFC

R704 10 k Standard - R0603 NFC

SV101 MA05-2 Standard - MA05-2 Debug

SW101 B3FS-1000 B3FS-1000 Omron Electronic Components

SWITCHTACT_ DTSM-6

Debug

SW102 B3FS-1000 B3FS-1000 Omron Electronic Components

SWITCHTACT_ DTSM-6

Debug

SW601 SLIDE-SPDT SLIDE-SPDT C&K Components SLIDE-SPDT ZERO

T201 NX3008NBKW NX3008NBKW NXP Semiconductors SOT323 -

T203 NX2020N2 NX2020N2 NXP Semiconductors SOT1220 -

T204 NX2020N2 NX2020N2 NXP Semiconductors SOT1220 -

T301 NX3008NBKW NX3008NBKW NXP Semiconductors SOT323 -

T302 NX2020N2 NX2020N2 NXP Semiconductors SOT1220 -

T303 NX2020N2 NX2020N2 NXP Semiconductors SOT1220 -

T401 NX3008NBKW NX3008NBKW NXP Semiconductors SOT323 -

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AN

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Ap

plicatio

n n

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NX

P S

emico

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ucto

rsA

N11524

NX

Q1

TX

A6

Ev

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ation

Bo

ard

T402 NX2020N2 NX2020N2 NXP Semiconductors SOT1220 - 30 V N-channel Trench MOSFET

T403 NX2020N2 NX2020N2 NXP Semiconductors SOT1220 - 30 V N-channel Trench MOSFET

30 V, 350 mA N-channel Trench MOSFET

30 V, single P-channel Trench MOSFET

30/30 V, 350/250 mA N/P-channel Trench MOSFET

connector header, SMT, R/A, 1.27 mm, 10P

Qi-compliant charging controller

VREG, 0.5 %, 2.495 V, 36 V

Half bridge driver IC

High precision, low-power current-sense amplifier

voltage output, current-shunt monitor

Half bridge driver IC

Half bridge driver IC

2 A, 23 V, 340 kHz synchronous step-down converter

3.3 V voltage regulator

NFC Forum type 2 Tag compliant IC with IC interface

header, pin, 2.54 mm, 6 way, 1 row

Table 3. Bill Of Materials (BOM) …continued

Part Value Part number Manufacturer Package Optional Description

All inform

ation provided

in this docum

ent is subject to leg

al disclaim

ers.©

NX

P S

em

iconductors N

.V. 2015. A

ll rights reserved.

Rev. 1 —

17 Feb

ruary 2015

27 o

f 54

T601 NX3008NBKW NX3008NBKW NXP Semiconductors SOT323 ZERO

T602 NX2020P1 NX2020P1 NXP Semiconductors SOT1220 ZERO

T701 NX3008CBKS NX3008CBKS NXP Semiconductors SOT363 NFC

TEST101 M50-3600542 M50-3600542 Samtec 127_2R10_SMT Debug

U101 NXQ1TXA6 NXQ1TXA6/001 NXP Semiconductors SOT865 -

U102 TL431BFDT TL431BFDT NXP Semiconductors SOT23 -

U201 NWP2081T NWP2081T NXP Semiconductors SOT96 -

U202 MAX44284HAUT+ MAX44284HAUT+ Maxim Integrated SOT457 FOD

U203 n.c. INA214AIDCKT Texas Instruments SC70 n.c.

U301 NWP2081T NWP2081T NXP Semiconductors SOT96 -

U401 NWP2081T NWP2081T NXP Semiconductors SOT96 -

U601 RT8295A RT8295A Richtek SOP-8 DCDC

U602 TDA3663 TDA3663 NXP Semiconductors SOT223 LDO

U701 NT3H1201 NT3H1201W0FHK NXP Semiconductors SOT902 NFC

UART101 MA06-1 Standard - MA06-1 Debug

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

7. Critical components

As mentioned in Section 6, certain components are critical in the design. In this section, we discuss these components, associated design considerations and potential pitfalls.

7.1 Power stage

7.1.1 Capacitor in LC tank circuit

The capacitor value in the tank circuit must be correct or the system does not function properly. The Wireless Power Consortium (WPC) specify the capacitor values. To verify that the correct value is used in the base station design, refer to WPC specifications.

For a 3-coil A6 type base station design, WPC specifies a value of 147 nF to be used with charging coil closer to the charging pad. It specifies using 136 nF for a charging coil further away from the charging pad.

As an example, Figure 13 depicts the LC tank circuit of coil 1, which is the furthest from the interface surface. The capacitance of C210 and C211 is 68 nF each. Total capacitance combined is 136 nF. Beside capacitor value, the dielectric must be C0G/NP0 type, else efficiency is lower and Qi compliance can be problematic.

The voltages in the tank circuits can swing as much as 100 Vp-p in the NXQ1TXA6 Evaluation Board. It is therefore important to choose the correct voltage rated capacitors. The capacitors C210 and C211 in Figure 13, are 100 V rated.

7.1.2 Half-bridge driver and MOSFETs

For +12 V system such as the A6 type base station, the maximum base station operating conditions lead to MOSFET requirements of a maximum 30 V, minimum 4 A and a maximum Rdson 40 m. In NXQ1TXA6 Evaluation Board, an N-Channel Trench MOSFET NX2020N2 (T203 and T204) is used in combination with NWP2081 (U201) half-bridge controller IC.

Fig 13. LC tank circuit of coil 1

aaa-015893

C211

GND1

C210

L1-1

[5]UC1_2

COIL1CCOIL1T

CL1CCL1T

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

If a different MOSFET other than NX2020N2 is designed in, the gate resistor must be adjusted depending on the gate capacitance of the MOSFET. The applied gate resistance and gate capacitance forms an RC time constant which influences the on/off switching times. In particular, the upper FET drive resistor R205 in Figure 14 serves to slow down the Trench MOSFET fast switching action, thus reducing noise.

The gate drive resistors themselves also serve as test points to observe the actual drive waveforms. Do not add any extra test points to the line from half-bridge driver NWP2081 to NX2020N2 MOSFET gates. It may introduce unwanted parasitic inductance or stray capacitance.

7.1.3 Capacitor snubber circuits

The option for a capacitor snubber circuits C208 and C209, in Figure 14, are included but not populated in NXQ1TXA6 Evaluation Board. They are located across the switching MOSFETs to allow tuning to reduce Electro-Magnetic (EM) emission. Capacitor snubber circuits must be placed close to the switching MOSFETs. If snubber circuits are not required, they can be removed from the Bill of Materials.

7.2 Current sense resistor

To measure the DC current into the power stage, a current measurement circuit is used. This circuit is shown in Figure 15. A current sense amplifier is used in combination with a current sense resistor in the DC supply to the half-bridge stage.

The current sense resistor R204 in Figure 15 should be 22 m and the tolerance must be 1 % or better. It is used in combination with the current sense amplifier MX44284HAUT on the NXQ1TXA6 Evaluation Board.

The above combination must be followed for all NXQ1TXA6 based system. Deviation could lead to lower efficiency, higher noise and wrong detection of foreign object (FOD). Refer to Bill Of Materials in Section 6 for more information.

Fig 14. Half bridge driver, MOSFET and capacitor snubber circuits of coil 1

aaa-015894

C208n.c.

C209n.c.

1

2

3

4

GLU201

R205

R206

C207

SH

GH

FS

VDD

GND

SD

CLK

8

7

6

5

T203

T204

GNDIGNDI GNDI

snubbercapacitors

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Application note Rev. 1 — 17 February 2015 29 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

7.3 Amplitude-Shift Keying envelope detector

As mentioned earlier, voltage as high as 100 Vp-p can be present at the input of the envelope detector show in Figure 16. Use only high-voltage capable devices in the detector circuits. BAS21 diode D501, D502 and D503 diodes capable of withstanding 200 V reverse voltage are used in NXQ1TXA6 Evaluation Board. A larger 1206 SMD footprint is selected for the passive components - resistors R501, R502, R505 and capacitors C501 and C502 to withstand the higher voltage.

7.4 Configuration and voltage measurement circuits

The inputs OPT1 and OPT2 are used for configuring the NXQ1TXA6 controller.

Input OPT1 is used to select the user interface (LED and Buzzer) configurations. Multiple configurations for the LED blinking patterns are described in the NXQ1TXA6 data sheet.

The voltage divider on the OPT2 input, when ASEL1 is enabled, sets the FOD threshold. The ASEL2 and ASEL3 signals are used for influencing the FOD detection method. Contact NXP for details on specific design configurations.

Fig 15. Current sense resistor

3

4

1

6

OUTISOUT [1]

TP203U202*

*only U202 or U203 is mounted.Not both

C202R204

RS+

RS-

VDD

SHDN

2GND

5

C212

R202

C215

aaa-015895

R207

R210

current senseresistor

+3V3

R208

Fig 16. Amplitude Shift Keying (ASK) envelope detector

aaa-015896

D501

D502

D503

D506

UC1_2[2]

UC2_2[3]

UC3_2[4]

AM[1]

REMARK: MAX. VOLTAGE 100 V

+3V3

R501

R502 C501

C502

C504

R503

R505

R506

R507

C503

AML[1]

AML

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

When the ASEL1, ASEL2 and ASEL3 lines are not driven the OPT2 input expects a stable 2.495 reference voltage present at its input. The shunt regulator U102 TL431BFDT, with an accuracy of 0.5 %, is used.

The power stage DC voltage is measured in input of VSNS using R115 and R116.

Use only 1 % tolerance resistors in Configuration (OPT0 and OPT1) and Voltage Sensing (VSNS) circuits.

7.5 Thermal protection

NTC201 provides temperature sensing which allows the controller (option) to sense the temperature for safety purposes. When using a thermistor of type b57551G1103F005, the transmitter stops power transfer at temperatures of 70 C and higher. When the temperature measured by the NTC is below 60 C, the transmitter commences power transfer. If not used, the NTC input must be connected to VDD.

Fig 17. Configuration and voltage measurement

aaa-015897

IS-[2,3,4]

INPUT VOLTAGEMEASUREMENT

VOLTAGEREFERENCE

SETTINGS CONFIGURATION

LP_VSUP

VSNS

R103

R104 R106 R113 R114

R105

R116

R115

OPT1

ASEL3

ASEL2

ASEL1

OPT2

R119

U102

C106 C105

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7.6 NFC antenna tuning capacitor

Due to the variation in shapes and dimensions of different NFC antennas, it is inevitable that the NFC antenna should be tuned for a new design. Tune the resonance frequency of the intended antenna to match close to 13.56 MHz. It can be done with the parallel capacitor C704. Capacitor dielectric must be C0G/NP0 type. If the resonance frequency is too low after removing parallel capacitor C704, the 1 nF value of the series capacitors C705 and C706, can be lowered.

The internal capacitance of the NFC IC NT3H1201 (U701) is 50 pF typical (refer to NT3H1201 data sheet).

The NFC functionality is optional and not needed for creating a wireless charging base station with NXQ1TXA6 controller.

Fig 18. Temperature sensing circuit

aaa-016354

C20110 nF NTC201

R20110 kΩ

measure temperature

optional

NTC(1)

LP_VSUP

Fig 19. Tuning capacitor NFC antenna

aaa-015898

C704

C705NFC

NFC coilC706 3

21

6

7

5

3

LA

U701VCC

NFC interface

VOUT

SDA

SCL

4FD

2VSS

1

LB8

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Application note Rev. 1 — 17 February 2015 32 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

8. PCB layout guidelines

Having a proper printed circuit board (PCB) layout is critical to the success of the application. A poor constructed PCB layout can cause the whole application not to function properly. Beyond basic circuit operation, it can also directly influence the ElectroMagnetic Compatibility (EMC) profile. Therefore, it is imperative that care should be exercised during the PCB layout stage.

Several good PCB design tips are explained here.

8.1 Ground planes

Design with a 4-layer PCB. The layer stack-up applied in NXQ1TXA6 Evaluation Board is as follows:

1. Layer 1: Component placement and signal trace

2. Layer 2: Clean uninterrupted ground

3. Layer 3: Signal trace

4. Layer 4: Ground and minimal routing trace if required

Notice that with this stacking technique, the signal traces are sandwiched between grounds. It provides a solid ground reference plane and helps to minimize ElectroMagnetic Interference (EMI) noise emissions.

As a rule, use ground planes: use copper-pour in unused areas of the PCB and stitch these areas with vias to inner ground planes.

8.2 NXQ1TXA6 charging controller

The center pad (pin 33) under NXQ1TXA6 charging controller is a ground pin. It is important to stitch with vias to inner ground planes to provide a solid ground reference. Make sure the decoupling capacitors C101and C102 on VDD1 supply pin 6 and VDD2 pin 26, are close by and connected with a wide trace. It ensures effective decoupling action to ground.

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

Fig 20. NXQ1TXA6 charging controller supply decoupling capacitors

Fig 21. Decoupling capacitors (left) & GND stitching vias underneath NXQ1TXA6 (right)

aaa-015899

2RESET

3SEL3

8PWR_ON

9LED_G

10SCL

11SDA

15EN_HB1

16LP_VSUP

17PWM_HIN

18TAG_FD

19n.c.

21ISENSE

22ASK

23CL_DET

24NTC1

25n.c.

26VSNS

30SEL1

31RXD

32TXD

7EN_NFC

12BUZZER

20OPT0

27OPT1

28LED_R

1SEL2

13EN_HB2

14EN_HB3

SW1

ASEL3

PWR_ON [6]

LED_G

SCL

SDA

EN_HB1 [1, 2]

PWM_HIN [1, 2, 3, 4]

TAG_FD [7]

TESTCLK

ISOUT

AM [1, 5]

AML [1, 5]

NTC

TESTIO

ASEL1

RXD

TXD

EN_NFC [7]

BUZ

LED_R

ASEL2

EN_HB2 [1, 3]

EN_HB3 [1, 4]

U101

NXQ1TXA6/001

JP101

C102C101

XTALIN

XTALOUT

VSS

4

5

VDD1

+3V3

+3V3

6VDD2

29

33

C103220 nF

R10247 kΩ

aaa-015906

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Application note Rev. 1 — 17 February 2015 34 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

8.3 Power stage

Separate ground planes are used for the system ground (GND) and the power stage ground (GNDI). It avoids crosstalk on sensitive signals which could otherwise result in erratic system behavior.

It is important to tie the two ground planes together at only ONE point. Having several tie points makes the purpose of separating the grounds useless. Do not have any other non-related signals in the area of the power ground plane.

Keep the current loops, shown in green in Figure 22, compact to minimize radiation. Place the decoupling capacitor (C203), at the VDD supply pin of the NWP2081 (U201), close to the IC.

Single the point system - power grounds

Fig 22. Half bridge driver stage of coil 1

aaa-015907

GNDIGNDI

GNDI

+12 V

GNDI GNDIGNDIGND

NODEBRIDGE

Single tie point system to power ground

1VDD

C203

C207

R206

R205 C208n.c.

C211

L1-1

C210

C209n.c. R209

CL1T CL1C

COIL1T COIL1C

G

G

D

S

U201

GND

SD

CLK

GL

[1, 3, 4]IS-

[1, 3, 4]PWM_HIN

[1]EN_HB1

[5]UC1_2SH

GH

FS

2

3

4

8

7

6

5

D

S

NWP2081

T203

T204

GNDI

C214n.c.

C213n.c.

GNDI

C216

GNDI

C217

C205R203T201

Fig 23. PCB layout of half-bridge driver of coil 1 in NXQ1TXA6 evaluation board

aaa-015908

single tie point for the systemand power grounds

compact current loops,decoupling capacitors close by

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Application note Rev. 1 — 17 February 2015 35 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

8.4 DC-to-DC converter

The same layout techniques implemented in the power stage can be applied to the DC-to-DC converter as shown in Figure 24 and Figure 25. Keep the current loop through L602 and C609 compact and make sure the decoupling capacitors, inductor and feedback components are close. Use X7R capacitors of good quality for C605 and C609.

8.5 Current sensing layout technique

When dealing with very low voltages generated across a current sense resistor, use the “Four-wire” or “Kelvin-connection” technique. It is important to avoid introducing false voltage drops from adjacent pads and other copper routes.

Fig 24. DC-to-DC converter

Fig 25. PCB layout of DC-to-DC converter in NXQ1TXA6 evaluation board

aaa-015909

VIN BOOT TP601

SW

FB

COMP

2 1

3

5

6

7

8

4

9

EN

SS

GND

GNDPADC606

R605L602

R607

R608

R606

C605

C608

C609

U601C607

aaa-015910

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

In the screenshot of NXP NXQ1TXA6 Evaluation Board schematics (see Figure 26), the current sense resistor R204 and input current is flowing from right to left.

Notice in Figure 27 how the R207 and R208 resistors are connected to the pad of R204 to eliminate measurement error. Copper conduction losses and copper resistance temperature dependency are the cause of these errors. It is referred to as the “Four-wire” or “Kelvin-connection” technique.

Proper and accurate current sensing technique is critical to the correct performance of the Foreign Object Detection (FOD). The sense resistor R204 should have an accuracy of 1 % or better tolerance and have a temperature stability of at least 200 PPM.

8.6 EMC common mode filter

The common mode filter L601 in Figure 28 functions to prevent high frequency disturbance signals from traveling back to the DC input power connector J601. No ground planes or other traces underneath the input power, otherwise it defeats the purpose of having a common mode filter in the first place.

As seen in Figure 29, sufficient gap is created between the input power and the closest copper area to prevent coupling of high frequency noise. It also shows that no copper fill or traces in the inner layers underneath component L601 should be used.

Fig 26. Current sensing

Fig 27. PCB layout of current sense resistor in NXQ1TXA6 evaluation board

3

4

1

6

OUTISOUT[1]

TP203U202*

*only U202 or U203 is mounted.Not both

C202R204

RS+

RS-

VDD

SHDN

2GND

5

C212

R202

C215

aaa-015911

R207

R210

n.c.

Kelvin contact

+3V3

R208

aaa-015912

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Application note Rev. 1 — 17 February 2015 37 of 54

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NXP Semiconductors AN11524NXQ1TXA6 Evaluation Board

8.7 Summary

To recap the key notes for a successful design:

1. Use 4-layer PCB

– Layer 1 Component placement and signal trace

– Layer 2 Clean uninterrupted ground

– Layer 3 Signal trace

– Layer 4 Ground and minimal routing trace if required

2. Separate system ground plane from power ground plane and tie them at only one point

3. Use only components with correct characteristics and ratings

4. Tight current loops in the half-bridge drive stage and DC-to-DC converter

5. Keep decoupling capacitors close by

6. Tune component for performance. Minimal effort if NXQ1TXA6 Evaluation Board is followed closely

7. Test points for key signal nodes

Fig 28. EMC common mode choke L601

Fig 29. PCB layout of common mode choke L601 in NXQ1TXA6 evaluation board

aaa-015913

J601

C601

SJ601

SJ602

4

3

1

2C602 C603

L601

aaa-015914

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9. Waveforms

This chapter shows several examples of typical waveform as can be observed on the test points in the design. For trace in the figures, the names of the corresponding schematic signal names are mentioned.

9.1 Power stage

Figure 30 shows the power stage behavior under a load condition of 1.25 W. Depending on receiver characteristics, the waveform on the connection between charging coil and capacitor can have different shape.

CH1: PWM_HIN - PWM input to half-bridge

CH2: COIL2T - Driver stage, connection of MOSFETs to LC tank

CH3: COIL 2C - Connection of charging coil to resonant capacitor

Fig 30. Power stage 1.25 W load

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Figure 31 shows the power stage behavior under a load of 5 W. Notice that the frequency is lower for the 5 W power transfer compare to the 1.25 W power transfer in Figure 30.

Depending on receiver characteristics, the waveform on the connection between charging coil and capacitor might have different shape.

CH1: PWM_HIN - PWM input to half-bridge

CH2: COIL2T - Driver stage, connection of MOSFETs to LC tank

CH3: COIL2C - Connection of charging coil to resonant capacitor

Fig 31. Power stage 5 W load

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In Figure 32, the dead time behavior of the half-bridge driver is visible in the waveform measured at the output of the driver stage.

CH1: PWM_HIN - PWM input to half-bridge

CH2: COIL2T - Driver stage, connection of MOSFETs to LC tank

CH3: COIL2C - Connection of charging coil to resonant capacitor

Fig 32. Power stage, fixed dead-time of 330 ns (load = 1.25 W)

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9.2 ASK waveforms

Figure 33 shows the ASK waveform visible on the charging coil voltage at spot Coil2C and the resulting output AM of the envelope detector.

CH1: Coil2C - Connection of charging coil to resonant capacitor

CH2: AM - Output of envelope detector

Fig 33. Typical ASK waveform

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9.3 Digital ping

Figure 34 shows that a digital ping is performed on each coil at interval of 500 ms to detect the presence of a Qi receiver device. The waveforms show the digital ping when no receiver is present.

CH1: PWM_HIN - PWM input to the half-bridge

CH2: EN_HB2 - Driver stage enable

CH3: Coil2T - Driver stage, connection of MOSFETs to LC tank

Fig 34. Repeated digital ping

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9.4 NFC tap to power on

In NFC tap to power on mode, the charger is completed powered down when not charging resulting in zero standby current. It can be seen with the CH 1 being 0 Volta in Figure 35. When an NFC field is applied to the charging pad by an NFC enabled phone, the NFC TAG chip TAG_VOUT, seen in CH 2, switches on the +12 V supply. After the DC-to-DC converter has created a 3V3 supply and the NXQ1TXA6 charging controller has started, the charging controller keeps the power switch active by enabling the PWR_ON signal as observed in CH4.

CH1: +12 V - Switched 12 V supply

CH2: TAG_VOUT - Power harvesting output from NFC NTAG IC

CH3: PWR_ON - PWR_ON take over signal to maintain power

CH4: +3V3 - Charging controller power supply

Fig 35. NFC tap to power on

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10. PCB layout

Fig 36. PCB component placement

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Fig 37. PCB top silkscreen

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Fig 38. PCB top layer

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Fig 39. PCB layer 2

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Fig 40. PCB layer 3

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Fig 41. PCB bottom layer

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11. Conclusion

This document shows how to create a Qi A6 type wireless power base station with NXP NXQ1TXA6 charging controller and NWP2081 half-bridge driver. It is optimized in terms of cost, functional performance and EMI.

It also demonstrates how to achieve zero power in standby mode base station using NFC technology.

Fig 42. PCB solder mask

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12. Legal information

12.1 Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

12.2 Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer.

In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages.

Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose.

Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

12.3 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

I2C-bus — logo is a trademark of NXP Semiconductors N.V.

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13. Tables

Table 1. LED status indicator . . . . . . . . . . . . . . . . . . . . . .9Table 2. NXP components for wireless charger

application . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 3. Bill Of Materials (BOM) . . . . . . . . . . . . . . . . . . 22

14. Figures

Fig 1. Wireless charging system as defined by Wireless Power Consortium . . . . . . . . . . . . . . . . . . . . . . . . .3

Fig 2. Overview of the charging pad . . . . . . . . . . . . . . . .5Fig 3. System efficiency . . . . . . . . . . . . . . . . . . . . . . . . . .6Fig 4. Switch, buttons and status LED location overview 7Fig 5. Standby-by power mode switch . . . . . . . . . . . . . . .8Fig 6. NXQ1TXA6 evaluation board block diagram . . . .12Fig 7. NXQ1TXA6 charging controller schematic . . . . .16Fig 8. Half bridge driver stage of coil 1 and current

sense schematic . . . . . . . . . . . . . . . . . . . . . . . . .17Fig 9. Half bridge driver stage of coil 2 and 3 . . . . . . . .18Fig 10. Amplitude Shift Keying (ASK) envelope detector

schematic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19Fig 11. DC supply schematic . . . . . . . . . . . . . . . . . . . . . .20Fig 12. NFC schematic . . . . . . . . . . . . . . . . . . . . . . . . . .21Fig 13. LC tank circuit of coil 1. . . . . . . . . . . . . . . . . . . . .28Fig 14. Half bridge driver, MOSFET and capacitor

snubber circuits of coil 1 . . . . . . . . . . . . . . . . . . .29Fig 15. Current sense resistor . . . . . . . . . . . . . . . . . . . . .30Fig 16. Amplitude Shift Keying (ASK) envelope detector.30Fig 17. Configuration and voltage measurement . . . . . . .31Fig 18. Temperature sensing circuit . . . . . . . . . . . . . . . . .32Fig 19. Tuning capacitor NFC antenna . . . . . . . . . . . . . .32Fig 20. NXQ1TXA6 charging controller supply

decoupling capacitors . . . . . . . . . . . . . . . . . . . . .34Fig 21. Decoupling capacitors (left) & GND stitching

vias underneath NXQ1TXA6 (right) . . . . . . . . . . .34Fig 22. Half bridge driver stage of coil 1 . . . . . . . . . . . . .35Fig 23. PCB layout of half-bridge driver of coil 1 in

NXQ1TXA6 evaluation board . . . . . . . . . . . . . . .35Fig 24. DC-to-DC converter . . . . . . . . . . . . . . . . . . . . . . .36Fig 25. PCB layout of DC-to-DC converter in

NXQ1TXA6 evaluation board . . . . . . . . . . . . . . .36Fig 26. Current sensing . . . . . . . . . . . . . . . . . . . . . . . . . .37Fig 27. PCB layout of current sense resistor in

NXQ1TXA6 evaluation board . . . . . . . . . . . . . . .37Fig 28. EMC common mode choke L601. . . . . . . . . . . . .38Fig 29. PCB layout of common mode choke L601 in

NXQ1TXA6 evaluation board . . . . . . . . . . . . . . .38Fig 30. Power stage 1.25 W load. . . . . . . . . . . . . . . . . . .39Fig 31. Power stage 5 W load . . . . . . . . . . . . . . . . . . . . .40Fig 32. Power stage, fixed dead-time of 330 ns

(load = 1.25 W) . . . . . . . . . . . . . . . . . . . . . . . . . .41Fig 33. Typical ASK waveform. . . . . . . . . . . . . . . . . . . . .42Fig 34. Repeated digital ping . . . . . . . . . . . . . . . . . . . . . .43Fig 35. NFC tap to power on . . . . . . . . . . . . . . . . . . . . . .44Fig 36. PCB component placement . . . . . . . . . . . . . . . . .45Fig 37. PCB top silkscreen . . . . . . . . . . . . . . . . . . . . . . .46Fig 38. PCB top layer. . . . . . . . . . . . . . . . . . . . . . . . . . . .47Fig 39. PCB layer 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48

Fig 40. PCB layer 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49Fig 41. PCB bottom layer . . . . . . . . . . . . . . . . . . . . . . . . 50Fig 42. PCB solder mask . . . . . . . . . . . . . . . . . . . . . . . . 51

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15. Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Scope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Getting started . . . . . . . . . . . . . . . . . . . . . . . . . . 53.1 Package contents . . . . . . . . . . . . . . . . . . . . . . . 53.2 Main features . . . . . . . . . . . . . . . . . . . . . . . . . . 63.3 System efficiency . . . . . . . . . . . . . . . . . . . . . . . 63.4 Board overview. . . . . . . . . . . . . . . . . . . . . . . . . 63.5 Stand-by power mode switch . . . . . . . . . . . . . . 83.6 Reset button . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.7 Foreign object detection button . . . . . . . . . . . . 83.8 Status LED . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93.9 NFC functionality . . . . . . . . . . . . . . . . . . . . . . . 9

4 NXP product offering. . . . . . . . . . . . . . . . . . . . 10

5 System overview . . . . . . . . . . . . . . . . . . . . . . . 115.1 NXQ1TXA6 charging controller . . . . . . . . . . . 135.2 Half Bridge driver . . . . . . . . . . . . . . . . . . . . . . 135.3 Amplitude-Shift Keying (ASK) envelope

demodulator . . . . . . . . . . . . . . . . . . . . . . . . . . 135.4 +12 V universal mains adapter . . . . . . . . . . . . 135.5 Current measurement. . . . . . . . . . . . . . . . . . . 145.6 Bandgap reference voltage. . . . . . . . . . . . . . . 145.7 DC-to-DC converter . . . . . . . . . . . . . . . . . . . . 145.8 Near Field Communication (NFC) zero

power in Standby mode . . . . . . . . . . . . . . . . . 14

6 Schematics and Bill Of Materials . . . . . . . . . . 156.1 Schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . 166.2 Bill Of Materials . . . . . . . . . . . . . . . . . . . . . . . 21

7 Critical components . . . . . . . . . . . . . . . . . . . . 287.1 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . 287.1.1 Capacitor in LC tank circuit. . . . . . . . . . . . . . . 287.1.2 Half-bridge driver and MOSFETs . . . . . . . . . . 287.1.3 Capacitor snubber circuits . . . . . . . . . . . . . . . 297.2 Current sense resistor . . . . . . . . . . . . . . . . . . 297.3 Amplitude-Shift Keying envelope detector . . . 307.4 Configuration and voltage measurement

circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307.5 Thermal protection . . . . . . . . . . . . . . . . . . . . . 317.6 NFC antenna tuning capacitor . . . . . . . . . . . . 32

8 PCB layout guidelines. . . . . . . . . . . . . . . . . . . 338.1 Ground planes . . . . . . . . . . . . . . . . . . . . . . . . 338.2 NXQ1TXA6 charging controller . . . . . . . . . . . 338.3 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . 358.4 DC-to-DC converter . . . . . . . . . . . . . . . . . . . . 368.5 Current sensing layout technique . . . . . . . . . . 368.6 EMC common mode filter . . . . . . . . . . . . . . . . 378.7 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

9 Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . 399.1 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . 399.2 ASK waveforms . . . . . . . . . . . . . . . . . . . . . . . 429.3 Digital ping . . . . . . . . . . . . . . . . . . . . . . . . . . . 439.4 NFC tap to power on . . . . . . . . . . . . . . . . . . . 44

10 PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

11 Conclusion. . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

12 Legal information . . . . . . . . . . . . . . . . . . . . . . 5212.1 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 5212.2 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 5212.3 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 52

13 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

14 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

© NXP Semiconductors N.V. 2015. All rights reserved.

For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

Date of release: 17 February 2015

Document identifier: AN11524

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.