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CHAPTER : 6 LOGIC FAMILIES 4/13/2012 1 Prof.Robinson Paul ,BVM Engineering College ,V.V.Nagar.
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4/13/20121 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 2 GTU Dec-2010 Questions (1)With neat circuit explain the two inputs TTL NAND gate using TOTAM POLE output also mention the advantages and disadvantages of TOTAM POLE output. (2)Define the following terms: : (1) Input bias current (2) Input offset voltage (3) PSRR (4)Noise margin (5) fan-in (6) Propagation delay (7)Figure of merit for logic families (3)Describe the comparison of IC logic families. (4)Explain with neat circuit diagram Tristate TTL devices. 4/13/20122 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 3 GTU June-2010 Questions 1.Give the classification of Logic families. Also list the characteristics of digital IC and explain any three of them 2.List the logic family. Give comparisons of each of them. Also give the advantages and disadvantages of each logic families. 4/13/20123 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 4 GTU June-2011 Questions 1. Define following parameters. I) Fan-out, II) Propagation delay, III) Speed power product, IV) Slew rate, V) CMRR, VI) Gain bandwidth product, VII) Power dissipation. 2. Give the comparison between various logic families. 4/13/20124 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 5 TOPIC 01 Classification based on circuit complexity SSI: ( 3 to 30 gates/chip ) The first integrated circuits held only a few devices, perhaps as many as ten diodes, transistors, resistors and capacitors, making it possible to fabricate one or more logic gates on a single device. Now known retrospectively as small-scale integration (SSI) MSI: ( 30 to 300 gates/chip ) improvements in technique led to devices with hundreds of logic gates, known as medium- scale integration (MSI). LSI: ( 300 to 3,000 gates/chip. ) Further improvements led to large-scale integration (LSI), i.e. systems with at least a thousand logic gates VLSI: ( more than 3,000 gates/chip ) Very-large-scale integration (VLSI) is the process of creating integrated circuits by combining thousands of transistors into a single chip ULSI: At one time, there was an effort to name and calibrate various levels of large-scale integration above VLSI. Terms like ultra-large-scale integration (ULSI) were used. 4/13/20125 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 6 TOPIC 01 Classification based on circuit complexity 4/13/20126 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 7 Ques: 2 Various Logic Families (A)Bipolar transistors : (1) Saturated : RTL,DTL,DCTL,I2L,HTL,TTL (2)Unsaturated: Schottky TTL and ECL (B) Unipolar MOSFET transistors : NMOS, PMOS, and CMOS 4/13/20127 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 8 Ques: 3 Important characteristics of each of IC families 3.1 Current and Voltage Parameters : V IH (min) : high- level input voltage V IL (max) : low- level input voltage V OH (min) : high- level output voltage V OL (max) : low- level output voltage I IH : high- level input current I IL : low- level input current I OH : high- level output current I OL : low- level output current 4/13/20128 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 9 Ques: 3 Important characteristics of each of IC families 3.1 Current and Voltage Parameters : 4/13/20129 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 10 3.1 Current and Voltage Parameters : V CC : The voltage applied to the power pins. V T (Threshold Voltage): The voltage level at which input pins will transition from being in one state to another. V IH (Voltage Input HIGH): Minimum positive voltage applied to an input pin which will be considered by the device as a logic HIGH. V IL (Voltage Input LOW): Maximum positive voltage applied to an input pin which will be considered by the device as a logic LOW. V OH (Voltage Output HIGH): Minimum positive voltage from an output pin which will be considered by the device as a logic HIGH 4/13/201210 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 11 3.1 Current and Voltage Parameters : V OL (Voltage Output LOW):Maximum positive voltage from an output pin which will be considered by the device as a logic LOW. I OH (Current Output HIGH): Current flowing into an output pin in the logical HIGH state under specified load conditions. I OL (Current Output LOW): Current flowing into an output pin in the logical LOW state under specified load conditions. I IH (Current Input HIGH): Current flowing into an input pin when HIGH is applied to that input. I IL (Current Input LOW): Current flowing into an input pin when LOW is applied to that input. 4/13/201211 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 12 Voltage Paramete rs 7474S74LS74AS74ALS74FHCHCTAHC V OH (min)2.42.7 2.5 4.9 4.4 V OL (max)0.40.5 0.1 0.44 V IH (min)2.0 3.52.03.85 V IL (max)0.8 1.00.81.65 4/13/201212 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 13 Ques: 3 Important characteristics of each of IC families 3.3 Noise Margin: 4/13/201213 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 14 Sinking and Sourcing Output gates are just like any other gate, they can have current flowing in two directions: into the output node (sinking), out of the output node (sourcing). We can show the output of a gate circuit as being a double-throw switch, that can connect the output terminal to either VCC or GND, depending on the position of the switch. For a gate outputting a LOW logic level, the output is analogous to the following circuit: 4/13/201214 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 15 Sinking and Sourcing Output gates are just like any other gate, they can have current flowing in two directions: into the output node (sinking), out of the output node (sourcing). We can show the output of a gate circuit as being a double-throw switch, that can connect the output terminal to either VCC or GND, depending on the position of the switch. For a gate outputting a LOW logic level, the output is analogous to the following Fig 1 & gate outputting a HIGH logic level, the output is analogous to the following Fig 2 Figure : 1Figure : 2 4/13/201215 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 16 Sinking and Sourcing Figure : 1 4/13/201216 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 17 Sinking and Sourcing Figure : 2 4/13/201217 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 18 Sinking Sourcing Figure : 2Figure : 1 The combination of Q3 and Q4 working as a push-pull transistor pair has the ability to either source current from VCC via the output terminal and into a load, or to sink current to GND via the output terminal from a load. 4/13/201218 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 19 Sinking and Sourcing Summarize The expressions sink and source relate to currents only and they refer to which direction the current is flowing. It is important to remember that logic gates can source and sink a very limited amount of current, usually in the order of a few mA. Therefore, outputs taken directly from logic gates are not enough to operate LEDs, relays, and other devices directly. The following figure illustrates a driver NAND gate that sources current when the output is HIGH and sinks current when the output is low: 4/13/201219 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 20 Ques: 3 Important characteristics of each of IC families 3.2 Fan In and Fan Out Fan In: The fan-in defined as the maximum number of inputs that a logic gate can accept. If number of input exceeds, the output will be undefined or incorrect. Fan Out: The fan-out is defined as the maximum number of inputs (load) that can be connected to the output of a gate without degrading the normal operation. Fan Out is calculated from the amount of current available in the output of a gate and the amount of current needed in each input of the connecting gate. 4/13/201220 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 21 Ques: 3 Important characteristics of each of IC families Fan Out:. 4/13/201221 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 22 Fan Out: For example, Input and output currents for the transistor-transistor logic (TTL) family are the following. Recall that negative current values indicate current flowing out of the gate while positive current values indicate current flowing into the gate: I OH = -400 A (i.e., output can source a maximum of 400A) I OL = 16 A (i.e., output can sink a maximum of 16A) I IH = 40 A (i.e., input can sink a maximum of 40A) I IL = -1.6 A (i.e., input can source a maximum of 1.6A) Therefore the fan-out is min ( 400/40, 16/1.6) = min (10, 10) = 10. In other words, each TTL gate can drive 10 other TTL gates without getting out of its guaranteed range of operation. If more than 10 gates were connected, the output voltage levels will degrade and the gate will slow down. 4/13/201222 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 23 Fan Out: When the NOR gate output is HIGH, the output bin behaves as a current source since I OH flows out of the driver gate and into the set of driven gates. The current I OH equals the sum of all input currents indicated by I IH, flowing into the driven gates. In other words, I OH = Sum of I IH. When the NOR gate output is LOW, the output bin behaves as a current sink since I OL flows into the gate and out of the driven gates. The current I OL equals the sum of all input currents indicated by I IL, flowing out of the driven gates. In other words, I OL = Sum of I IL. 4/13/201223 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 24 Ques: 3 Important characteristics of each of IC families 3.3 Noise Margin: 4/13/201224 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 25 Ques: 3 Important characteristics of each of IC families Noise: Stray electric and magnetic fields can induce voltages on the connecting wires between logic circuits,These unwanted, spurious signals are called noise Noise Immunity: Circuits ability to tolerate noise without causing spurious changes in the output voltage. Noise Margin: Quantitative measure of noise immunity is called Noise Margin. High-state noise margin : V NH = V OH (min) - V IH (min) Low-state noise margin : V NL = V IL (max) - V OL (max) 4/13/201225 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 26 Ques: 3 Important characteristics of each of IC families High-state noise margin : V NH = V OH (min) - V IH (min) Low-state noise margin : V NL = V IL (max) - V OL (max) Any noise voltage smaller than VOH - VIH will be tolerated and will not change the output value of the driven gate. Any noise voltage smaller than VIL - VOL will be tolerated and will not change the output value of the driven gate. For TTL: V NH = 2.7V - 2.0V = 0.7V. V NL = 0.8V - 0.5V = 0.3V. For CMOS: V NH = 4.95V - 3.5V = 1.45V. V NL = 1.5V - 0.05V = 1.45V. CMOS can tolerate much more noise than TTL. 4/13/201226 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 27 4/13/201227 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 28 LVC: Low Voltage CMOS. LV: Low Voltage. AVC: Advanced Very Low Voltage CMOS CBT: Cross Bar Technology TVC: Translation Voltage Clamp 4/13/201228 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 29 Propagation Delay After an input to a logic gate changes, when does the output actually change? V 50% = (V OH + V OL ) / 2. t PHL : Difference in time between input and output signals for output to go from HIGH to V 50% (see tphl in diagram above) t PLH : Difference in time between input and output signals for output to go from LOW to V 50% (see tplh in diagram above) 4/13/201229 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 30 Figure of Merit (Speed Power Product: SPP) A figure of merit of IC families is the product of their propagation delay and power consumption, called the speed-power product (SPP) the lower, the better. 4/13/201230 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 31 4/13/201231 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 32 Diode-Transistor Logic We can also use diodes in conjunction with transistors to create Diode-Transistor Logic (or simply a DTL gate) circuits. It is better to design a DTL gate than an RTL gate because it is lot easier to create diodes than resistors on a chip. A diode on the chip may in fact be a transistor connected as a diode. 4/13/201232 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 33 4/13/201233 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 34 DTL NOR Gate: We can use a diode OR circuit and couple its output to a transistor inverter (NOT) circuit in order to obtain a NOR gate. The resistance in the base circuit R B is selected to limit the base current. 4/13/201234 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 35 DTL NOR Gate: 4/13/201235 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 36 4/13/201236 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 37 DTL NAND GATE We can use a diode AND circuit followed by a transistor inverter (NOT) circuit to obtain a NAND gate. The minimum voltage at C to turn on Q is 1.3 V [0.7 V for D3 and 0.6 V for Q].The maximum value of the input voltage, VIL, for the high output signal is 0.6 V [1.3 0.7]. Thus, the lower-noise margin is only 0.4 V. It would be better to use at least one more diode in series with D3 in order to increase the lower-noise margin. 4/13/201237 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 38 DTL NAND GATE 4/13/201238 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 39 4/13/201239 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 40 4/13/201240 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 41 4/13/201241 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 42 4/13/201242 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 43 4/13/201243 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 44 4/13/201244 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 45 4/13/201245 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 46 46 Prof.Robinson Paul, BVM Engineering College,V.V.Nagar. Slide 47 4/13/201247 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 48 4/13/201248 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar. Slide 49 Reference: http://diranieh.com/Electrenicas/DigitalAnalog.htm University of Connecticut 4/13/201249 Prof.Robinson Paul,BVM Engineering College,V.V.Nagar.